IHM-B 模块 采用第三代高速沟槽栅 / 场终止 IGBT 和第三代发射极控制二极管 IHM-BmodulewithfastTrench/FieldstopIGBT3andEmitterControlled3diode CES = 33 IC nom = A / ICRM = A 典型应用 TypicalApplications 斩波应用 Chopperapplications 中压变流器 Mediumvoltageconverters 电机传动 Motordrives 牵引变流器 Tractiondrives UPS 系统 UPSsystems 风力发电机 Windturbines 电气特性 ElectricalFeatures 高直流电压稳定性 HighDCstability 高短路能力 Highshort-circuitcapability 低开关损耗 Lowswitchinglosses 低 CEsat LowCEsat 无与伦比的坚固性 Unbeatablerobustness Tvjop=15 C Tvjop=15 C CEsat 带正温度系数 CEsatwithpositivetemperaturecoefficient 机械特性 MechanicalFeatures 碳化硅铝 (AlSiC) 基板提供更高的温度循环能力 AlSiC base plate for increased thermal cycling capability 封装的 CTI> PackagewithCTI> IHMB 封装 IHMBhousing 绝缘的基板 Isolatedbaseplate ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 2-21 22-23 Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument 3.2 www.infineon.com
IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedalues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage Tvj = -4 C CES 33 33 TC = 95 C, Tvj max = 15 C IC nom A tp = 1 ms ICRM A GES +/-2 特征值 /Characteristicalues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IC = A, GE = 15 IC = A, GE = 15 IC = A, GE = 15 CE sat 2,55 3, 3,15 3,1 3,45 IC = 48, ma, CE = GE, GEth 5,2 5,8 6,4 GE = -15... +15, CE = QG 28, µc RGint,63 Ω f = 1 MHz,, CE = 25, GE = Cies 19 nf f = 1 MHz,, CE = 25, GE = Cres 4, nf CE = 33, GE =, ICES 5, ma CE =, GE = 2, IGES na IC = A, CE = GE = ±15 RGon = 1,5 Ω, CGE = 22 nf IC = A, CE = GE = ±15 RGon = 1,5 Ω, CGE = 22 nf IC = A, CE = GE = ±15 RGoff = 2,3 Ω, CGE = 22 nf IC = A, CE = GE = ±15 RGoff = 2,3 Ω, CGE = 22 nf IC = A, CE =, LS = 85 nh GE = ±15, di/dt = 3 A/ () RGon =,71 Ω, CGE = 22 nf IC = A, CE =, LS = 85 nh GE = ±15, du/dt = 21 / () RGoff = 2,3 Ω, CGE = 22 nf GE 15, CC = 25 CEmax = CES -LsCE di/dt tp 1, td on tr td off tf Eon Eoff ISC,6,6,6,55,55,55 3, 3,2 3,2,3,35,35 125 17 195 15 155 4 A 每个 IGBT/perIGBT RthJC 11,1 K/kW 每个 IGBT/perIGBT λpaste=1w/(m K)/λgrease=1W/(m K) RthCH 14,5 K/kW Tvj op -4 15 C Datasheet 2 3.2
二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedalues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value 最大损耗功率 Maximumpowerdissipation 最小开通时间 Minimumturn-ontime Tvj = -4 C RRM 33 33 IF A tp = 1 ms IFRM A R =, tp = 1 ms, R =, tp = 1 ms, I²t 26 245 ka²s ka²s PRQM kw ton min 1, 特征值 /Characteristicalues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IF = A, GE = IF = A, GE = IF = A, GE = IF = A, - dif/dt = 3 A/ (Tvj=15 C) R = GE = -15 IF = A, - dif/dt = 3 A/ (Tvj=15 C) R = GE = -15 IF = A, - dif/dt = 3 A/ (Tvj=15 C) R = GE = -15 F IRM Qr Erec 3,1 2,75 2,65 125 45 9 15 45 11 13 3,85 3,25 每个二极管 /perdiode RthJC 19,8 K/kW 每个二极管 /perdiode λpaste=1w/(m K)/λgrease=1W/(m K) A A A µc µc µc RthCH 16,5 K/kW Tvj op -4 15 C Datasheet 3 3.2
模块 /Module 绝缘测试电压 Isolationtestvoltage 局部放电停止电压 Partialdischargeextinctionvoltage DC 稳定性 DCstability 模块基板材料 Materialofmodulebaseplate 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque 重量 Weight RMS, f = 5 Hz, t = 1 min. ISOL 6, k RMS, f = 5 Hz, QPD 1 pc ISOL 2,6 k, 1 fit CE D 21 端子至散热器 /terminaltoheatsink 端子至端子 /terminaltoterminal 端子至散热器 /terminaltoheatsink 端子至端子 /terminaltoterminal AlSiC 32,2 19,1 CTI > min. typ. max. mm mm LsCE 9, nh TC=25 C, 每个开关 /perswitch RCC'+EE',19 mω 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote 螺丝 M4 根据相应的应用手册进行安装 ScrewM4-Mountingaccordingtovalidapplicationnote 螺丝 M8 根据相应的应用手册进行安装 ScrewM8-Mountingaccordingtovalidapplicationnote Tstg -4 15 C M 4,25 5,75 Nm M 1,8 8, - - 2,1 1 Nm Nm G g Datasheet 4 3.2
输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(CE) GE=15 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(CE) Tvj=15 C GE = 2 GE = 15 GE = 12 GE = 1 GE = 9 GE = 8 IC [A] IC [A],,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, CE [],,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, 5,5 6, 6,5 7, CE [] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(GE) CE=2 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) GE=±15,RGon=.71Ω,RGoff=2.3Ω,CE=,CGE=22 nf 7 5 Eon, Eon, Eoff, Eoff, IC [A] E [] 3 5 6 7 8 9 1 11 12 13 GE [] IC [A] Datasheet 5 3.2
开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) GE=±15,IC=A,CE=,CGE=22nF 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) 9 Eon, Eon, Eoff, Eoff, 1 ZthJC : IGBT 7 1 E [] 5 ZthJC [K/kW] 3 1 1 2 3 4 5 6 7 8 9 RG [Ω] i: ri[k/kw]: τi[s]: 1 1,36,2 2 5,618,36 3 2,629,227 4 1,49 4,942,1,1,1,1 1 1 t [s] 反偏安全工作区 IGBT, 逆变器 (RBSOA) reversebiassafeoperatingareaigbt,inverter(rbsoa) IC=f(CE) GE=±15,RGoff=2.3Ω,Tvj=15 C,CGE=22nF 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(F) 25 IC, Modul IC, Chip 15 IC [A] IF [A] 5 5 15 25 3 35 CE [],,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 F [] Datasheet 6 3.2
开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=.71Ω,CE= 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=A,CE= Erec, Erec, Erec, Erec, E [] E [] IF [A] 2 4 6 8 1 12 14 RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) 安全工作区 二极管, 逆变器 (SOA) safeoperationareadiode,inverter(soa) IR=f(R) Tvj=15 C 1 ZthJC : Diode 25 IR, Modul 1 15 ZthJC [K/kW] IR [A] 1 5 i: ri[k/kw]: τi[s]: 1 2,915,2 2 5,496,17 3 8,721,95 4 2,631 4,5,1,1,1,1 1 1 t [s] 5 15 25 3 35 R [] Datasheet 7 3.2
接线图 /Circuitdiagram 封装尺寸 /Packageoutlines Datasheet 8 3.2
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