62mmC-SerienModulmitschnellemIGBT2fürhochfrequentesSchalten 62mmC-seriesmodulewiththefastIGBT2forhigh-frequencyswitching IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES V TC = 6 C, Tvj max = 15 C TC = 25 C, Tvj max = 15 C IC nom IC 7 tp = 1 ms ICRM TC = 25 C, Tvj max = 15 Ptot 39 W VGES +/-2 V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload IC =, VGE = 15 V IC =, VGE = 15 V VCE sat 3,2 3,85 3,75 V V IC = 24, m, VCE = VGE, VGEth 4,5 5,5 6,5 V VGE = -15 V... +15 V QG 6,3 µc RGint,5 Ω f = 1 MHz,, VCE = 25 V, VGE = V Cies 39, nf f = 1 MHz,, VCE = 25 V, VGE = V Cres 2,6 nf VCE = V, VGE = V, ICES 5, m VCE = V, VGE = 2 V, IGES n IC =, VCE = V RGon = 1,5 Ω td on,1,11 上升时间 ( 电感负载 ) Risetime,inductiveload IC =, VCE = V RGon = 1,5 Ω tr,6,7 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload IC =, VCE = V RGoff = 1,5 Ω td off,53,55 下降时间 ( 电感负载 ) Falltime,inductiveload IC =, VCE = V RGoff = 1,5 Ω tf,3,4 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse IC =, VCE = V, LS = 8 nh RGon = 1,5 Ω Eon 22, 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse IC =, VCE = V, LS = 8 nh RGoff = 1,5 Ω Eoff 46, 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions VGE 15 V, VCC = 9 V VCEmax = VCES -LsCE di/dt tp 1, ISC 39 每个 IGBT/perIGBT RthJC,32 K/W 每个 IGBT/perIGBT λpaste=1w/(m K)/λgrease=1W/(m K) RthCH,16 K/W Tvj op -4 125 C 1
二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value VRRM V IF tp = 1 ms IFRM VR = V, tp = 1 ms, I²t 75 ²s 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent IF =, VGE = V IF =, VGE = V IF =, - dif/dt = / (Tvj=125 C) VR = V VGE = -15 V VF IRM 2, 1,7 42 62 2,55 V V 恢复电荷 Recoveredcharge IF =, - dif/dt = / (Tvj=125 C) VR = V VGE = -15 V Qr 4, 9, µc µc 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy IF =, - dif/dt = / (Tvj=125 C) VR = V VGE = -15 V Erec 25, 48, 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions 每个二极管 /perdiode RthJC,5 K/W 每个二极管 /perdiode λpaste=1w/(m K)/λgrease=1W/(m K) RthCH,28 K/W Tvj op -4 125 C 2
模块 /Module 绝缘测试电压 Isolationtestvoltage 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque 重量 Weight RMS, f = 5 Hz, t = 1 min. VISOL 2,5 kv Cu 基本绝缘 (class1,iec6114) basicinsulation(class1,iec6114) 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal l2o3 CTI > 425 每个模块 /permodule λpaste=1w/(m K)/λgrease=1W/(m K) 2, 11, min. typ. max. mm mm RthCH,1 K/W LsCE 16 nh TC=25 C, 每个开关 /perswitch RCC'+EE',5 mω Tstg -4 125 C 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote 螺丝 M4 根据相应的应用手册进行安装 ScrewM4-Mountingaccordingtovalidapplicationnote 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 3, - 6, Nm G 34 g M 1,1 2,5 - - 2, 5, Nm Nm 3
输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=15V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=125 C VGE = 8V VGE = 9V VGE = 1V VGE = 12V VGE = 15V VGE = 2V IC [] IC [],,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, 5,5 6, VCE [V],,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, 5,5 6, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=2V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=1.5Ω,RGoff=1.5Ω,VCE=V 16 14 Eon, Eoff, 12 1 IC [] E [] 8 6 4 2 5 6 7 8 9 1 11 12 VGE [V] IC [] 4
开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=,VCE=V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) 225 Eon, Eoff,,1 ZthJC : IGBT 175 15 E [] 125 1 ZthJC [K/W],1 75 5 25 2 4 6 8 1 12 RG [Ω] i: ri[k/w]: τi[s]: 1,192,1 2,156,2 3,124,5 4,928,1,1,1,1,1 1 1 t [s] 反偏安全工作区 IGBT, 逆变器 (RBSO) reversebiassafeoperatingareaigbt,inverter(rbso) IC=f(VCE) VGE=±15V,RGoff=1.5Ω,Tvj=125 C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 1 13 11 IC, Modul IC, Chip 9 IC [] 7 IF [] 5 3 1 1 VCE [V],,2,4,6,8 1, 1,2 1,4 1,6 1,8 2, 2,2 2,4 2,6 VF [V] 5
开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IC) RGon=1.5Ω,VCE=V 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=,VCE=V 6 Erec, 6 Erec, 5 5 4 4 E [] 3 E [] 3 2 2 1 1 IF [] 3 6 9 12 15 RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJC=f(t),1 ZthJC : Diode ZthJC [K/W],1 i: ri[k/w]: τi[s]: 1,3,1 2,165,2 3,16,5 4,145,1,1,1,1,1 1 1 t [s] 6
接线图 /circuit_diagram_headline 封装尺寸 /packageoutlines In fin e o n 7
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