EconoDUAL 3 模块 采用第四代沟槽栅 / 场终止 IGBT4 和 HE 型发射极控制二极管带有 pressfit 压接管脚和温度检测 NTC EconoDUAL 3modulewithTrench/FieldstopIGBT4andEmitterControlledHEdiodeandPressFIT/NTC VCES = 12V IC nom = 45A / ICRM = A 潜在应用 PotentialApplications UPS 系统 UPSsystems 太阳能应用 Solarapplications 电机传动 Motordrives 辅助逆变器 Auxiliaryinverters 电气特性 ElectricalFeatures Tvjop= C Tvjop= C 低 VCEsat LowVCEsat 机械特性 MechanicalFeatures PressFIT 压接技术 PressFITcontacttechnology 标准封装 Standardhousing ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 2-21 22-23 Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V3. www.infineon.com
IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES 12 V TC = 1 C, Tvj max = 175 C IC nom 45 A tp = 1 ms ICRM A VGES +/-2 V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IC = 45 A, VGE = 15 V IC = 45 A, VGE = 15 V IC = 45 A, VGE = 15 V VCE sat 1,75 2, 2,5 2,1 V V V IC = 17, ma, VCE = VGE, VGEth 5,25 5,8 6,35 V VGE = -15 V... +15 V QG 3,3 µc RGint 1,7 Ω f = 1 MHz,, VCE = 25 V, VGE = V Cies 28, nf f = 1 MHz,, VCE = 25 V, VGE = V Cres 1,55 nf VCE = 12 V, VGE = V, ICES 3, ma VCE = V, VGE = 2 V, IGES 4 na IC = 45 A, VCE = 4 V VGE = ±15 V RGon = 1,3 Ω IC = 45 A, VCE = 4 V VGE = ±15 V RGon = 1,3 Ω IC = 45 A, VCE = 4 V VGE = ±15 V RGoff = 1,3 Ω IC = 45 A, VCE = 4 V VGE = ±15 V RGoff = 1,3 Ω IC = 45 A, VCE = 4 V, LS = 65 nh VGE = ±15 V, di/dt = 245 A/ () RGon = 1,3 Ω IC = 45 A, VCE = 4 V, LS = 65 nh VGE = ±15 V, du/dt = 27 V/ () RGoff = 1,3 Ω VGE 15 V, VCC = 8 V VCEmax = VCES -LsCE di/dt tp 1, td on tr td off tf Eon Eoff ISC,2,22,22,11,13,13,37,45,48,1,19,23 31, 45,5 49,5 27, 39,5 44,5 18 A 每个 IGBT/perIGBT RthJC,625 K/W 每个 IGBT/perIGBT λpaste=1w/(m K)/λgrease=1W/(m K) RthCH,422 K/W Tvj op -4 C Datasheet 2 V3.
二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value VRRM 12 V IF 45 A tp = 1 ms IFRM A VR = V, tp = 1 ms, VR = V, tp = 1 ms, I²t 35 285 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IF = 45 A, VGE = V IF = 45 A, VGE = V IF = 45 A, VGE = V IF = 45 A, - dif/dt = 365 A/ (Tvj= C) VR = 4 V VGE = -15 V IF = 45 A, - dif/dt = 365 A/ (Tvj= C) VR = 4 V VGE = -15 V IF = 45 A, - dif/dt = 365 A/ (Tvj= C) VR = 4 V VGE = -15 V VF IRM Qr Erec 1,65 1,65 1,65 255 35 335 45,5 67, 83, 16, 23,5 29, A²s A²s 2,1 V V V 每个二极管 /perdiode RthJC,971 K/W 每个二极管 /perdiode λpaste=1w/(m K)/λgrease=1W/(m K) A A A µc µc µc RthCH,413 K/W Tvj op -4 C 负温度系数热敏电阻 /NTC-Thermistor 特征值 /CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance R1 偏差 DeviationofR1 耗散功率 Powerdissipation B- 值 B-value B- 值 B-value B- 值 B-value 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. TNTC = 25 C R25 5, kω TNTC = 1 C, R1 = 493 Ω R/R -5 5 % TNTC = 25 C P25 2, mw R2 = R25 exp [B25/5(1/T2-1/(298,15 K))] B25/5 3375 K R2 = R25 exp [B25/8(1/T2-1/(298,15 K))] B25/8 3411 K R2 = R25 exp [B25/1(1/T2-1/(298,15 K))] B25/1 3433 K Datasheet 3 V3.
模块 /Module 绝缘测试电压 Isolationtestvoltage 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 杂散电感, 模块 Strayinductancemodule 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque 重量 Weight RMS, f = 5 Hz, t = 1 min VISOL 3,4 kv 基本绝缘 (class1,iec6114) basicinsulation(class1,iec6114) 端子至散热器 /terminaltoheatsink 端子至端子 /terminaltoterminal 端子至散热器 /terminaltoheatsink 端子至端子 /terminaltoterminal 螺丝 M5 根据相应的应用手册进行安装 ScrewM5-Mountingaccordingtovalidapplicationnote 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote Cu Al2O3 14,5 13, 12,5 1, CTI > 2 min. typ. max. mm mm LsCE 2 nh Tstg -4 125 C M 3, 6, Nm M 3, - 6, Nm G 345 g The electrical characterization was performed in NPC2 topology, which combines the modules and FF45R12ME4_B11. It has to be considered, that the commutation in this configuration takes place between both modules. Die elektrische Charakterisierung wurde in NPC2-Topologie durchgeführt. Dabei werden die Module und FF45R12ME4_B11 kombiniert. Es ist zu beachten, dass die Kommutierung zwischen den beiden Modulen stattfindet. Datasheet 4 V3.
输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=15V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj= C 75 75 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 45 45,,5 1, 1,5 2, 2,5 3, 3,5 VCE [V],,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=2V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=1.3Ω,RGoff=1.3Ω,VCE=4V 75 325 275 Eon, Eon, Eoff, Eoff, 25 225 2 45 E [] 175 125 1 75 5 25 5 6 7 8 9 1 11 12 13 VGE [V] 45 75 Datasheet 5 V3.
开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=45A,VCE=4V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) 14 12 Eon, Eon, Eoff, Eoff,,1 ZthJC : IGBT 1 E [] 8 6 ZthJC [K/W],1 4 2 2 4 6 8 1 12 14 RG [Ω] i: ri[k/w]: τi[s]: 1,4,145 2,423,41 3,932,223 4,688 1,64,1,1,1,1 1 1 t [s] 反偏安全工作区 IGBT, 逆变器 (RBSOA) reversebiassafeoperatingareaigbt,inverter(rbsoa) IC=f(VCE) VGE=±15V,RGoff=1.3Ω,Tvj= C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 11 1 IC, Modul IC, Chip 75 8 7 5 IF [A] 45 4 2 1 2 4 8 1 12 14 VCE [V],,2,4,6,8 1, 1,2 1,4 1,6 1,8 2, 2,2 2,4 VF [V] Datasheet 6 V3.
开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=1.3Ω,VCE=4V 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=45A,VCE=4V 4 Erec, Erec, 3 Erec, Erec, 35 25 3 25 2 E [] 2 E [] 15 15 1 1 5 5 45 75 IF [A] 2 4 6 8 1 12 14 RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) 负温度系数热敏电阻 温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 1 ZthJC : Diode 1 Rtyp,1 1 ZthJC [K/W] R[Ω],1 1 i: ri[k/w]: τi[s]: 1,861,16 2,671,368 3,172,231 4,419 2,69,1,1,1,1 1 1 t [s] 1 2 4 6 8 1 12 14 16 TNTC [ C] Datasheet 7 V3.
接线图 /Circuitdiagram 封装尺寸 /Packageoutlines Datasheet 8 V3.
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