EconoDUL 3 模块 采用第四代沟槽栅 / 场终止 IGBT4 和 HE 型发射极控制二极管 带有温度检测 NTC EconoDUL 3modulewithTrench/FieldstopIGBT4andEmitterControlledHEdiodeandNTC VCES = 2V IC nom = 225 / ICRM = 45 典型应用 Typicalpplications 电机传动 MotorDrives 伺服驱动器 ServoDrives UPS 系统 UPSSystems 风力发电机 WindTurbines 电气特性 ElectricalFeatures 低 VCEsat LowVCEsat Tvjop=5 C Tvjop=5 C 机械特性 MechanicalFeatures 标封装 StandardHousing ModuleLabelCode BarcodeCode28 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit -5 6-2-9 2-2 22-23 ULapproved(E83335)
IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES 2 V TC = 95 C, Tvj max = 75 C TC = 25 C, Tvj max = 75 C IC nom IC 225 32 tp = ms ICRM 45 TC = 25 C, Tvj max = 75 C Ptot 5 W VGES +/-2 V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IC = 225, VGE = 5 V IC = 225, VGE = 5 V IC = 225, VGE = 5 V VCE sat,85 2, 2,5 2,5 V V V IC = 7,8 m, VCE = VGE, VGEth 5,2 5,8 6,4 V VGE = -5 V... +5 V QG,55 µc RGint 3,3 Ω f = MHz,, VCE = 25 V, VGE = V Cies 3, nf f = MHz,, VCE = 25 V, VGE = V Cres,75 nf VCE = 2 V, VGE = V, ICES 3, m VCE = V, VGE = 2 V, IGES 4 n IC = 225, VCE = 6 V VGE = ±5 V RGon =,6 Ω IC = 225, VCE = 6 V VGE = ±5 V RGon =,6 Ω IC = 225, VCE = 6 V VGE = ±5 V RGoff =,6 Ω IC = 225, VCE = 6 V VGE = ±5 V RGoff =,6 Ω IC = 225, VCE = 6 V, LS = 8 nh VGE = ±5 V, di/dt = 575 / () RGon =,6 Ω IC = 225, VCE = 6 V, LS = 8 nh VGE = ±5 V, du/dt = 34 V/ () RGoff =,6 Ω VGE 5 V, VCC = 8 V VCEmax = VCES -LsCE di/dt tp, td on tr td off tf Eon Eoff,6,7,8,4,4,4,38,47,5,7,9, 6,8 2,5 5, 7, 26,5 29,5 每个 IGBT/perIGBT RthJC,4 K/W 每个 IGBT/perIGBT λpaste=w/(m K)/λgrease=W/(m K) ISC 9 RthCH,3 K/W Tvj op -4 5 C 2
二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value VRRM 2 V IF 225 tp = ms IFRM 45 VR = V, tp = ms, VR = V, tp = ms, 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IF = 225, VGE = V IF = 225, VGE = V IF = 225, VGE = V IF = 225, - dif/dt = 575 / (Tvj=5 C) VR = 6 V VGE = -5 V IF = 225, - dif/dt = 575 / (Tvj=5 C) VR = 6 V VGE = -5 V IF = 225, - dif/dt = 575 / (Tvj=5 C) VR = 6 V VGE = -5 V I²t VF IRM Qr Erec 8,65,65,65 3 32 34 22,5 43, 49,5 2, 22, 25, ²s ²s 2, V V V 每个二极管 /perdiode RthJC,9 K/W 每个二极管 /perdiode λpaste=w/(m K)/λgrease=W/(m K) µc µc µc RthCH,42 K/W Tvj op -4 5 C 负温度系数热敏电阻 /NTC-Thermistor 特征值 /CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance R 偏差 DeviationofR 耗散功率 Powerdissipation B- 值 B-value B- 值 B-value B- 值 B-value 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. TC = 25 C R25 5, kω TC = C, R = 493 Ω R/R -5 5 % TC = 25 C P25 2, mw R2 = R25 exp [B25/5(/T2 - /(298,5 K))] B25/5 3375 K R2 = R25 exp [B25/8(/T2 - /(298,5 K))] B25/8 34 K R2 = R25 exp [B25/(/T2 - /(298,5 K))] B25/ 3433 K 3
模块 /Module 绝缘测试电压 Isolationtestvoltage 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque 重量 Weight RMS, f = 5 Hz, t = min VISOL 2,5 kv Cu 基本绝缘 (class,iec64) basicinsulation(class,iec64) 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal l2o3 4,5 3, 2,5, CTI > 2 每个模块 /permodule λpaste=w/(m K)/λgrease=W/(m K) min. typ. max. mm mm RthCH,9 K/W LsCE 2 nh TC=25 C, 每个开关 /perswitch RCC'+EE',3 mω Tstg -4 25 C 螺丝 M5 根据相应的应用手册进行安装 ScrewM5-Mountingaccordingtovalidapplicationnote 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 3, - 6, Nm M 3, - 6, Nm G 345 g 4
输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=5V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=5 C 45 4 35 45 4 35 VGE = 9V VGE = 7V VGE = 5V VGE = 3V VGE = V VGE = 9V 3 3 IC [] 25 2 IC [] 25 2 5 5 5 5,,4,8,2,6 2, 2,4 2,8 3,2 3,6 4, VCE [V],,5,,5 2, 2,5 3, 3,5 4, 4,5 5, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=2V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±5V,RGon=.6Ω,RGoff=.6Ω,VCE=6V 45 4 35 6 5 Eon, Eon, Eoff, Eoff, 3 4 IC [] 25 2 E [] 3 5 2 5 5 6 7 8 9 2 3 4 VGE [V] 5 5 2 25 3 35 4 45 IC [] 5
开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±5V,IC=225,VCE=6V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) 8 7 Eon, Eon, Eoff, Eoff, ZthJC : IGBT 6 5, E [] 4 ZthJC [K/W] 3, 2 2 4 6 8 2 4 6 RG [Ω] i: ri[k/w]: τi[s]:,84, 2,462,2 3,448,5 4,46,,,,, t [s] 反偏安全工作区 IGBT, 逆变器 (RBSO) reversebiassafeoperatingareaigbt,inverter(rbso) IC=f(VCE) VGE=±5V,RGoff=.6Ω,Tvj=5 C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 5 45 4 IC, Modul IC, Chip 45 375 35 3 3 IC [] 25 IF [] 225 2 5 5 75 5 2 4 6 8 2 4 VCE [V],,2,4,6,8,,2,4,6,8 2, 2,2 2,4 VF [V] 6
开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=.6Ω,VCE=6V 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=225,VCE=6V 4 35 Erec, Erec, 3 25 Erec, Erec, 3 25 2 E [] 2 E [] 5 5 5 5 5 5 2 25 3 35 4 45 IF [] 2 4 6 8 2 4 6 RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) 负温度系数热敏电阻 温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) ZthJC : Diode Rtyp, ZthJC [K/W] R[Ω], i: ri[k/w]: τi[s]:,4, 2,627,2 3,68,5 4,55,,,,, t [s] 2 4 6 8 2 4 6 TC [ C] 7
接线图 /circuit_diagram_headline 封装尺寸 /packageoutlines Infineon 8
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