FF2R2KE3 IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES 2 V TC = 8 C, Tvj max = 5 C TC = 25 C, Tvj max = 5 C IC nom IC 2 295 tp = ms ICRM 4 TC = 25 C, Tvj max = 5 Ptot 5 W VGES +/-2 V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload IC = 2, VGE = 5 V IC = 2, VGE = 5 V VCE sat,7 2, 2,5 V V IC = 8, m, VCE = VGE, VGEth 5, 5,8 6,5 V VGE = -5 V... +5 V QG,9 µc RGint 3,8 Ω f = MHz,, VCE = 25 V, VGE = V Cies 4, nf f = MHz,, VCE = 25 V, VGE = V Cres,5 nf VCE = 2 V, VGE = V, ICES 5, m VCE = V, VGE = 2 V, IGES 4 n IC = 2, VCE = 6 V RGon = 3,6 Ω td on,25,3 上升时间 ( 电感负载 ) Risetime,inductiveload IC = 2, VCE = 6 V RGon = 3,6 Ω tr,9, 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload IC = 2, VCE = 6 V RGoff = 3,6 Ω td off,55,65 下降时间 ( 电感负载 ) Falltime,inductiveload IC = 2, VCE = 6 V RGoff = 3,6 Ω tf,3,8 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse IC = 2, VCE = 6 V, LS = 8 nh RGon = 3,6 Ω Eon 5, 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse IC = 2, VCE = 6 V, LS = 8 nh RGoff = 3,6 Ω Eoff 35, 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 在开关状态下温度 Temperatureunderswitchingconditions VGE 5 V, VCC = 9 V VCEmax = VCES -LsCE di/dt tp, 每个 IGBT/perIGBT RthJC,2 K/W Tvj op -4 25 C ISC 8 dateofpublication:23--2
FF2R2KE3 二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value VRRM 2 V IF 2 tp = ms IFRM 4 VR = V, tp = ms, I²t 78 ²s 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent IF = 2, VGE = V IF = 2, VGE = V IF = 2, - dif/dt = 2 / (Tvj=25 C) VR = 6 V VGE = -5 V VF IRM,65,65 5 9 2,5 V V 恢复电荷 Recoveredcharge IF = 2, - dif/dt = 2 / (Tvj=25 C) VR = 6 V VGE = -5 V Qr 2, 36, µc µc 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy IF = 2, - dif/dt = 2 / (Tvj=25 C) VR = 6 V VGE = -5 V Erec 9, 7, 结 - 外壳热阻 Thermalresistance,junctiontocase 在开关状态下温度 Temperatureunderswitchingconditions 每个二极管 /perdiode RthJC,2 K/W Tvj op -4 25 C 模块 /Module 绝缘测试电压 Isolationtestvoltage 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque 重量 Weight RMS, f = 5 Hz, t = min. VISOL 2,5 kv Cu 基本绝缘 (class,iec64) basicinsulation(class,iec64) 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal dateofpublication:23--2 l2o3 CTI > 425 每个模块 /permodule λpaste=w/(m K)/λgrease=W/(m K) 2,, min. typ. max. mm mm RthCH, K/W LsCE 2 nh TC=25 C, 每个开关 /perswitch RCC'+EE',7 mω Tstg -4 25 C 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 3, - 6, Nm M 2,5-5, Nm G 34 g 2
FF2R2KE3 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=5V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=25 C 4 36 32 4 36 32 VGE = 9V VGE = 7V VGE = 5V VGE = 3V VGE = V VGE = 9V 28 28 24 24 2 2 6 6 2 2 8 8 4 4,,5,,5 2, 2,5 3, 3,5 VCE [V],,5,,5 2, 2,5 3, 3,5 4, 4,5 5, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=2V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±5V,RGon=3.6Ω,RGoff=3.6Ω,VCE=6V 4 36 8 7 Eon, Eoff, 32 28 6 24 5 2 E [] 4 6 3 2 8 2 4 5 6 7 8 9 2 VGE [V] 4 8 2 6 2 24 28 32 36 4 dateofpublication:23--2 3
FF2R2KE3 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±5V,IC=2,VCE=6V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) 9 Eon, Eoff, ZthJC : IGBT 8 E [] 7 6 5 4 3 ZthJC [K/W],, 2 4 8 2 6 2 24 28 32 36 RG [Ω] i: ri[k/w]: τi[s]:,228,87 2,683,2364 3,645,26 4,544,6499,,,, t [s] 反偏安全工作区 IGBT, 逆变器 (RBSO) reversebiassafeoperatingareaigbt,inverter(rbso) IC=f(VCE) VGE=±5V,RGoff=3.6Ω,Tvj=25 C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 45 4 IC, Modul IC, Chip 4 36 35 32 3 28 25 2 IF [] 24 2 6 5 2 8 5 4 2 4 6 8 2 4 VCE [V],,2,4,6,8,,2,4,6,8 2, 2,2 2,4 VF [V] dateofpublication:23--2 4
FF2R2KE3 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=3.6Ω,VCE=6V 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=2,VCE=6V 25 Erec, 25 Erec, 2 2 5 5 E [] E [] 5 5 5 5 2 25 3 35 4 IF [] 4 8 2 6 2 24 28 32 36 RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) ZthJC : Diode ZthJC [K/W], i: ri[k/w]: τi[s]:,378,87 2,36,2364 3,88,26 4,8398,6499,,,, t [s] dateofpublication:23--2 5
FF2R2KE3 接线图 /circuit_diagram_headline 封装尺寸 /packageoutlines j n j n i i dateofpublication:23--2 6
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