40 6 2011 6 Vol.40 No.6 Infrared and Laser Engineering Jun. 2011 808 nm 2000 W 1 1 1 1 2 2 2 2 2 12 (1. 710119 2. 710119) : bar 808 nm bar 100 W 808 nm 20 bar 2 000 W bar LIV bar 808 nm : : TN248.4 TN365 : A : 1007-2276(2011)06-1075-06 808 nm CW 2000 W semiconductor laser vertical stack Zhang Entao 1 Zhang Yanxin 1 Xiong Lingling 1 Wang Jingwei 1 Kang Lijun 2 Yang Kai 2 Wu Di 2 Yuan Zhenbang 2 Dai Huabin 2 Liu Xingsheng 12 (1. State Key Laboratory of Transient Optics & Photonics Xi an Institute of Optics & Precision Mechanics of Chinese Academy of Sciences Xi an 710119 China; 2. Xi an Focuslight Optoelectronics Technology Co. Ltd. Xi an 710119 China) Abstract: In order to promote the performance and power of high-power semiconductor lasers double-faced thermal conduction technology was used thermal design and packaging design were theoretically analyzed and optimized which greatly improved the power of micro-channel water cooled vertical stack and single bar semiconductor lasers. The power of 808 nm 20 bars vertical stack semiconductor laser reaches 2 000 W under the continuous wave (CW) condition the average power of each bar reaches 100 W. The experimental data of LIV character spectrum character facula and smile of near field the spreading angle and direction of semiconductor laser were obtained which showed the excellent performance of this semiconductor lasers. Also the life-time test experiment was carried out and the result shows the good performance. The highpower semiconductor lasers will be used in many application fields. Key words: high power semiconductor laser; vertical stack; micro-channel water cooled; continuous wave(cw) :2010-10-14; :2010-11-18 : (YZ200844) : (1978-) Email:Entaozhang@163.com
1076 40 0 [1-3] (Smile) [4] 808 nm (CW) 2 000 W 1 50% 1 W 1 W Fig.1 Thermal design of semiconductor laser vertical stack ; Ansys 20 bar ; bar 2 25 Fig.2 Structure design of double-side heat conduction 6 L/min 808 nm CW 2 000 W 1(a) bar 3 bar 32.8 25 7.8 20 bar 1(b) bar 5.4 1 2(a) 2(b) Fig.3 Thermal flux vector graph of CW micro-channel 3 water cooled semiconductor laser
6 :808 nm 2000 W 1077 91.3% 8.7% Smile 5 808 nm 20 bar 4(a) bar 4(b) 300 μm 5 Fig.5 Technics process of semiconductor lasers vertical stack 4 Fig.4 Semiconductor lasers vertical stack and micro-channel water cooler 808 nm 3.1 bar CW (QCW) 25 20 bar CW 808 nm PI 2 000 W bar 100 W 6 CW 100 A 900~1 000 nm bar 2 000 W 51% 150 W QCW 8% 808 nm 5 000 W bar 250 W [5] Smile bar bar bar 3 2 6 808 nm PI Fig.6 PI curve of 808 nm CW micro-channel water cooled bar ( 4(b)) vertical stack semiconductor laser
1078 40 bar [6-7] bar ( 7 ) (FWHM) 3.35 nm90% 5.46 nm 0.5 nm 7 808 nm vertical stack semiconductor laser at 300 mm 9 300 mm 808 nm Fig.9 Laser spot of 808 nm CW micro-channel water cooled 3.2 bar Fig.7 Spectrum character of 808 nm CW micro-channel water ( 4(b)) cooled vertical stack semiconductor laser bar 808 nm bar 8 bar 25 CW 100 W LIV 10 100 A 55% 8 808 nm Fig.8 Laser spot of 808 nm CW micro-channel water cooled vertical stack semiconductor laser in near field 10 bar 808 nm LIV 808nm 2000W Zemax Fig.10 LIV curve of single bar 808 nm CW micro-channel water cooled 300 mm 9(a) ; semiconductor laser 9(b) ; 90% ( ) ( [6-7] 90%
6 :808 nm 2000 W 1079 11 FWHM 1.74 nm90% 2.85 nm 12 bar Fig.12 Laser spot of single bar 808 nm CW micro-channel water cooled semiconductor laser in near field bar Smile 1 μm 13 11 bar 808nm Fig.11 Spectrum character of single bar 808nm CW micro-channel water cooled semiconductor laser 200 bar 808 nm 83% 2 nm 100% semiconductor laser in near field 2.5 nm 900 bar 808 nm 99% 1 μm bar bar 95% 66.24 FWHM 32.2 ; 95% bar 10.50 FWHM 5.4 14 12(a) bar 12(b) 62 Smile [8] bar [8] CTE Smile 13 bar Smile Fig.13 "Smile" image of single bar micro-channel water cooled 14 808 nm bar CTE Fig.14 Divergent angle of single bar 808 nm CW micro-channel water cooled laser diode in far filed
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