FP5RKT3 IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES V TC = 8 C, Tvj max = 5 C TC = 5 C, Tvj max = 5 C IC nom tp = ms ICRM TC = 5 C, Tvj max = 5 Ptot 8 W VGES +/- V 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload IC = 5, VGE = 5 V IC = 5, VGE = 5 V IC VCE sat 5 75,7,9,5 V V IC =, m, VCE = VGE, VGEth 5, 5,8 6,5 V VGE = -5 V... +5 V QG,7 µc RGint, Ω f = MHz,, VCE = 5 V, VGE = V Cies 3,5 nf f = MHz,, VCE = 5 V, VGE = V Cres,3 nf VCE = V, VGE = V, ICES 5, m VCE = V, VGE = V, IGES n IC = 5, VCE = 6 V RGon = 8 Ω td on,9,9 上升时间 ( 电感负载 ) Risetime,inductiveload IC = 5, VCE = 6 V RGon = 8 Ω tr,3,5 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload IC = 5, VCE = 6 V RGoff = 8 Ω td off,,5 下降时间 ( 电感负载 ) Falltime,inductiveload IC = 5, VCE = 6 V RGoff = 8 Ω tf,7,9 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse IC = 5, VCE = 6 V, LS = 5 nh RGon = 8 Ω Eon,9 6,6 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse IC = 5, VCE = 6 V, LS = 5 nh RGoff = 8 Ω Eoff,,9 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 在开关状态下温度 Temperatureunderswitchingconditions VGE 5 V, VCC = 9 V VCEmax = VCES -LsCE di/dt tp, 每个 IGBT/perIGBT RthJC,5 K/W Tvj op - 5 C ISC preparedby:s dateofpublication:3--3 revision:.
FP5RKT3 二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent It- 值 I²t-value VRRM V IF 5 tp = ms IFRM VR = V, tp = ms, I²t 69 ²s 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent IF = 5, VGE = V IF = 5, VGE = V IF = 5, - dif/dt = / (Tvj=5 C) VR = 6 V VGE = -5 V VF IRM,65,65 5, 5,,5 V V 恢复电荷 Recoveredcharge IF = 5, - dif/dt = / (Tvj=5 C) VR = 6 V VGE = -5 V Qr 6,, µc µc 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy IF = 5, - dif/dt = / (Tvj=5 C) VR = 6 V VGE = -5 V Erec,, 结 - 外壳热阻 Thermalresistance,junctiontocase 在开关状态下温度 Temperatureunderswitchingconditions 每个二极管 /perdiode RthJC,75 K/W Tvj op - 5 C 二极管, 整流器 /Diode,Rectifier 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 最大正向均方根电流 ( 每芯片 ) MaximumRMSforwardcurrentperchip 最大整流器输出均方根电流 MaximumRMScurrentatrectifieroutput 正向浪涌电流 Surgeforwardcurrent It- 值 I²t-value VRRM 6 V TC = 8 C IFRMSM 8 TC = 8 C IRMSM 5 tp = ms, tp = ms, Tvj = 5 C tp = ms, tp = ms, Tvj = 5 C 正向电压 Forwardvoltage 反向电流 Reversecurrent 结 - 外壳热阻 Thermalresistance,junctiontocase 在开关状态下温度 Temperatureunderswitchingconditions IFSM I²t 5 5 8 Tvj = 5 C, IF = 5 VF, V ²s ²s Tvj = 5 C, VR = 6 V IR 3, m 每个二极管 /perdiode RthJC,65 K/W Tvj op C preparedby:s dateofpublication:3--3 revision:.
FP5RKT3 IGBT, 制动 - 斩波器 /IGBT,Brake-Chopper 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES V TC = 8 C, Tvj max = 5 C TC = 5 C, Tvj max = 5 C IC nom tp = ms ICRM 8 TC = 5 C, Tvj max = 5 Ptot W VGES +/- V 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload IC =, VGE = 5 V IC =, VGE = 5 V IC VCE sat 55,8,5,3 V V IC =,5 m, VCE = VGE, VGEth 5, 5,8 6,5 V VGE = -5 V... +5 V QG,33 µc RGint 6, Ω f = MHz,, VCE = 5 V, VGE = V Cies,5 nf f = MHz,, VCE = 5 V, VGE = V Cres,9 nf VCE = V, VGE = V, ICES 5, m VCE = V, VGE = V, IGES n IC =, VCE = 6 V RGon = 7 Ω td on,9,9 上升时间 ( 电感负载 ) Risetime,inductiveload IC =, VCE = 6 V RGon = 7 Ω tr,3,5 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload IC =, VCE = 6 V RGoff = 7 Ω td off,,5 下降时间 ( 电感负载 ) Falltime,inductiveload IC =, VCE = 6 V RGoff = 7 Ω tf,7,9 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse IC =, VCE = 6 V, LS = t.b.d. nh RGon = 7 Ω Eon, 6, 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse IC =, VCE = 6 V, LS = t.b.d. nh RGoff = 7 Ω Eoff 3, 3,6 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 在开关状态下温度 Temperatureunderswitchingconditions VGE 5 V, VCC = 9 V VCEmax = VCES -LsCE di/dt tp, 每个 IGBT/perIGBT RthJC,6 K/W Tvj op - 5 C ISC 6 preparedby:s dateofpublication:3--3 revision:. 3
FP5RKT3 二极管, 制动 - 斩波器 /Diode,Brake-Chopper 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent It- 值 I²t-value VRRM V IF 5 tp = ms IFRM 3 VR = V, tp = ms, I²t 6, ²s 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent IF = 5, VGE = V IF = 5, VGE = V IF = 5, - dif/dt = / (Tvj=5 C) VR = 6 V IRM VF,65,65 6, 5,,5 V V 恢复电荷 Recoveredcharge IF = 5, - dif/dt = / (Tvj=5 C) VR = 6 V Qr,8 3, µc µc 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy IF = 5, - dif/dt = / (Tvj=5 C) VR = 6 V Erec,55, 结 - 外壳热阻 Thermalresistance,junctiontocase 在开关状态下温度 Temperatureunderswitchingconditions 每个二极管 /perdiode RthJC,5 K/W Tvj op - 5 C 负温度系数热敏电阻 /NTC-Thermistor 额定电阻值 Ratedresistance R 偏差 DeviationofR 耗散功率 Powerdissipation B- 值 B-value B- 值 B-value B- 值 B-value 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. TC = 5 C R5 5, kω TC = C, R = 93 Ω R/R -5 5 % TC = 5 C P5, mw R = R5 exp [B5/5(/T - /(98,5 K))] B5/5 3375 K R = R5 exp [B5/8(/T - /(98,5 K))] B5/8 t.b.d. K R = R5 exp [B5/(/T - /(98,5 K))] B5/ t.b.d. K preparedby:s dateofpublication:3--3 revision:.
FP5RKT3 模块 /Module 绝缘测试电压 Isolationtestvoltage 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 重量 Weight RMS, f = 5 Hz, t = min VISOL,5 kv Cu 基本绝缘 (class,iec6) basicinsulation(class,iec6) 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal I3 CTI > 5 每个模块 /permodule λpaste=w/(m K)/λgrease=W/(m K), 7,5 min. typ. max. mm mm RthCH,9 K/W LsCE 6 nh TC=5 C, 每个开关 /perswitch RCC'+EE' R'+CC',, Tstg - 5 C 螺丝 M5 根据相应的应用手册进行安装 ScrewM5-Mountingaccordingtovalidapplicationnote mω M 3, - 6, Nm G 3 g preparedby:s dateofpublication:3--3 revision:. 5
FP5RKT3 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=5V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=5 C 9 8 9 8 VGE = 9V VGE = 7V VGE = 5V VGE = 3V VGE = V VGE = 9V 7 7 6 6 IC [] 5 IC [] 5 3 3,,5,,5,,5 3, 3,5 VCE [V],,5,,5,,5 3, 3,5,,5 5, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±5V,RGon=8Ω,RGoff=8Ω,VCE=6V 9 8 Eon, Eoff, 8 6 7 6 IC [] 5 E [] 8 3 6 5 6 7 8 9 VGE [V] 3 5 6 7 8 9 IC [] preparedby:s dateofpublication:3--3 revision:. 6
FP5RKT3 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±5V,IC=5,VCE=6V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) Eon, Eoff, ZthJC : IGBT 8 E [] 6 ZthJC [K/W], 5 5 5 3 35 RG [Ω] i: ri[k/w]: τi[s]:,577,35,3,8 3,,8,7893,8,,,, t [s] 反偏安全工作区 IGBT, 逆变器 (RBSO) reversebiassafeoperatingareaigbt,inverter(rbso) IC=f(VCE) VGE=±5V,RGoff=8Ω,Tvj=5 C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) IC, Modul IC, Chip 9 8 8 7 6 IC [] 6 IF [] 5 3 6 8 VCE [V],,5,,5,,5 VF [V] preparedby:s dateofpublication:3--3 revision:. 7
FP5RKT3 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=8Ω,VCE=6V 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=5,VCE=6V 8 Erec, 8 Erec, 7 7 6 6 5 5 E [] E [] 3 3 3 5 6 7 8 9 IF [] 5 5 5 3 35 RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) 正向偏压特性 二极管, 整流器 ( 典型 ) forwardcharacteristicofdiode,rectifier(typical) IF=f(VF) ZthJC : Diode 9 Tvj = 5 C 8 7 6 ZthJC [K/W], IF [] 5 3 i: ri[k/w]: τi[s]:,7637,3333,933,39 3,,9,5,766,,,, t [s],,6,8,,, VF [V] preparedby:s dateofpublication:3--3 revision:. 8
FP5RKT3 输出特性 IGBT, 制动 - 斩波器 ( 典型 ) outputcharacteristicigbt,brake-chopper(typical) IC=f(VCE) VGE=5V 正向偏压特性 二极管, 制动 - 斩波器 ( 典型 ) forwardcharacteristicofdiode,brake-chopper(typical) IF=f(VF) 8 7 8 7 6 6 5 5 IC [] IF [] 3 3,,5,,5,,5 3, 3,5 VCE [V],,5,,5,,5 3, 3,5, VF [V] 负温度系数热敏电阻 温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) Rtyp R[Ω] 6 8 6 TC [ C] preparedby:s dateofpublication:3--3 revision:. 9
FP5RKT3 接线图 /circuit_diagram_headline 封装尺寸 /packageoutlines Infineon preparedby:s dateofpublication:3--3 revision:.
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