FSRVT3 IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES V TC = C, Tvj max = 5 C TC = 5 C, Tvj max = 5 C IC nom tp = ms ICRM TC = 5 C, Tvj max = 5 Ptot, W VGES +/- V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload IC =, VGE = 5 V IC =, VGE = 5 V IC VCE sat,9,5,5 V V IC =,3 m, VCE = VGE, VGEth 5, 5,,5 V VGE = -5 V... +5 V QG, µc RGint, Ω f = MHz,, VCE = 5 V, VGE = V Cies,7 nf f = MHz,, VCE = 5 V, VGE = V Cres, nf VCE = V, VGE = V, ICES, m VCE = V, VGE = V, IGES n IC =, VCE = V RGon = Ω td on,37,37 上升时间 ( 电感负载 ) Risetime,inductiveload IC =, VCE = V RGon = Ω tr,,5 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload IC =, VCE = V RGoff = Ω td off,9,39 下降时间 ( 电感负载 ) Falltime,inductiveload IC =, VCE = V RGoff = Ω tf,9,5 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse IC =, VCE = V, LS = nh RGon = Ω Eon,95,5 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse IC =, VCE = V, LS = nh RGoff = Ω Eoff,7, 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions VGE 5 V, VCC = 9 V VCEmax = VCES -LsCE di/dt tp, 每个 IGBT/perIGBT RthJC,75,95 K/W 每个 IGBT/perIGBT λpaste=w/(m K)/λgrease=W/(m K) ISC 35 RthCH,5 K/W Tvj op - 5 C dateofpublication:3--3 revision:.
FSRVT3 二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent It- 值 I²t-value VRRM V IF tp = ms IFRM VR = V, tp = ms, I²t 33, ²s 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent IF =, VGE = V IF =, VGE = V IF =, - dif/dt = 5 / (Tvj=5 C) VR = V VGE = -5 V VF IRM,5,5,,5, V V 恢复电荷 Recoveredcharge IF =, - dif/dt = 5 / (Tvj=5 C) VR = V VGE = -5 V Qr,, µc µc 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy IF =, - dif/dt = 5 / (Tvj=5 C) VR = V VGE = -5 V Erec,3, 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions 每个二极管 /perdiode RthJC,5,5 K/W 每个二极管 /perdiode λpaste=w/(m K)/λgrease=W/(m K) RthCH,7 K/W Tvj op - 5 C 模块 /Module 绝缘测试电压 Isolationtestvoltage 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature npresskraft für mech. Bef. pro Feder mountig force per clamp 重量 Weight RMS, f = 5 Hz, t = min VISOL,5 kv 基本绝缘 (class,iec) basicinsulation(class,iec) 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal lo3 5,, CTI > 5 3, 7, min. typ. max. mm mm LsCE nh TC=5 C, 每个开关 /perswitch RCC'+EE' R'+CC' 9, 9, Tstg - 5 C F 3-5 N G g mω With additional insulation of the mounting clamp higher values of creepage and clearance distances to the heatsink can be achieved. For more information call your responsible sales representative. dateofpublication:3--3 revision:.
FSRVT3 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=5V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=5 C VGE = 9V VGE = 7V VGE = 5V VGE = 3V VGE = V VGE = 9V IC [] IC [],,,,,,,, 3, 3,, VCE [V],,5,,5,,5 3, 3,5,,5 5, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±5V,RGon=Ω,RGoff=Ω,VCE=V 3,5 3, Eon, Eoff,,5, IC [] E [],5,,5 5 7 9 3 VGE [V], IC [] dateofpublication:3--3 revision:. 3
FSRVT3 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±5V,IC=,VCE=V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJH=f(t) 3,5 Eon, Eoff, ZthJH : IGBT,, E [], ZthJH [K/W],7, 5 5 5 3 35 RG [Ω] i: ri[k/w]: τi[s]:,7,5,333,5 3,95,5,5,,,,, t [s] 反偏安全工作区 IGBT, 逆变器 (RBSO) reversebiassafeoperatingareaigbt,inverter(rbso) IC=f(VCE) VGE=±5V,RGoff=Ω,Tvj=5 C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) IC, Modul IC, Chip IC [] IF [] VCE [V],,5,,5,,5 VF [V] dateofpublication:3--3 revision:.
FSRVT3 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=Ω,VCE=V 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=,VCE=V, Erec,, Erec,,,,, E [] E [],,,,, IF [], 5 5 5 3 35 RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJH=f(t) ZthJH : Diode ZthJH [K/W] i: ri[k/w]: τi[s]:,,5,,5 3,5,5,9,,,,, t [s] dateofpublication:3--3 revision:. 5
FSRVT3 接线图 /circuit_diagram_headline 封装尺寸 /packageoutlines dateofpublication:3--3 revision:.
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