FF3R2KE4 62mmC-SerienModulmitTrench/FeldstoppIGBT4undoptimierterEmitterControlledDiode 62mmC-seriesmodulewithtrench/fieldstopIGBT4andoptimizedEmitterControlledDiode IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES 2 V TC = C, Tvj max = 75 C TC = 25 C, Tvj max = 75 C IC nom IC 3 46 tp = ms ICRM 6 TC = 25 C, Tvj max = 75 C Ptot 6 W VGES +/-2 V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IC = 3, VGE = 5 V IC = 3, VGE = 5 V IC = 3, VGE = 5 V VCE sat,75 2, 2,5 2,5 V V V IC =,5 m, VCE = VGE, VGEth 5,2 5,8 6,4 V VGE = -5 V... +5 V QG 2,5 µc RGint 2,5 Ω f = MHz,, VCE = 25 V, VGE = V Cies 9, nf f = MHz,, VCE = 25 V, VGE = V Cres,7 nf VCE = 2 V, VGE = V, ICES 5, m VCE = V, VGE = 2 V, IGES 4 n IC = 3, VCE = 6 V VGE = ±5 V RGon =,8 Ω IC = 3, VCE = 6 V VGE = ±5 V RGon =,8 Ω IC = 3, VCE = 6 V VGE = ±5 V RGoff =,8 Ω IC = 3, VCE = 6 V VGE = ±5 V RGoff =,8 Ω IC = 3, VCE = 6 V, LS = 3 nh VGE = ±5 V, di/dt = 6 / () RGon =,8 Ω IC = 3, VCE = 6 V, LS = 3 nh VGE = ±5 V, du/dt = 4 V/ () RGoff =,8 Ω VGE 5 V, VCC = 9 V VCEmax = VCES -LsCE di/dt tp, td on tr td off tf Eon Eoff ISC,2,25,27,45,5,55,5,6,62,,6,8 6,5 25, 3, 23,5 35, 39, 2 每个 IGBT/perIGBT RthJC,93 K/W 每个 IGBT/perIGBT λpaste=w/(m K)/λgrease=W/(m K) RthCH,32 K/W Tvj op -4 5 C dateofpublication:23--4
FF3R2KE4 二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value VRRM 2 V IF 3 tp = ms IFRM 6 VR = V, tp = ms, VR = V, tp = ms, I²t 9 8 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IF = 3, VGE = V IF = 3, VGE = V IF = 3, VGE = V IF = 3, - dif/dt = 6 / (Tvj=5 C) VR = 6 V VGE = -5 V IF = 3, - dif/dt = 6 / (Tvj=5 C) VR = 6 V VGE = -5 V IF = 3, - dif/dt = 6 / (Tvj=5 C) VR = 6 V VGE = -5 V VF IRM Qr Erec,65,65,65 36 4 4 3, 56, 66, 4, 26, 28, ²s ²s 2,5 V V V 每个二极管 /perdiode RthJC,5 K/W 每个二极管 /perdiode λpaste=w/(m K)/λgrease=W/(m K) µc µc µc RthCH,52 K/W Tvj op -4 5 C dateofpublication:23--4 2
FF3R2KE4 模块 /Module 绝缘测试电压 Isolationtestvoltage 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque 重量 Weight RMS, f = 5 Hz, t = min. VISOL 4, kv Cu 基本绝缘 (class,iec64) basicinsulation(class,iec64) 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal l2o3 29, 23, 23,, CTI > 4 每个模块 /permodule λpaste=w/(m K)/λgrease=W/(m K) min. typ. max. mm mm RthCH, K/W LsCE 2 nh TC=25 C, 每个开关 /perswitch RCC'+EE',7 mω Tstg -4 25 C 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 3, - 6, Nm M 2,5-5, Nm G 34 g dateofpublication:23--4 3
FF3R2KE4 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=5V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=5 C 6 5 6 5 VGE = 9V VGE = 7V VGE = 5V VGE = 3V VGE = V VGE = 9V 4 4 IC [] 3 IC [] 3 2 2,,4,8,2,6 2, 2,4 2,8 3,2 VCE [V],,5,,5 2, 2,5 3, 3,5 4, 4,5 5, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=2V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±5V,RGon=.8Ω,RGoff=.8Ω,VCE=6V 6 5 8 7 Eon, Eoff, Eon, Eoff, 6 4 5 IC [] 3 E [] 4 2 3 2 5 6 7 8 9 2 VGE [V] 2 3 4 5 6 IC [] dateofpublication:23--4 4
FF3R2KE4 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±5V,IC=3,VCE=6V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) 5 35 2 Eon, Eoff, Eon, Eoff, ZthJC : IGBT 5, 9 E [] 75 6 ZthJC [K/W] 45, 3 5 i: ri[k/w]: τi[s]:,558, 2,369,2 3,2976,5 4,2697, 2 4 6 8 2 4 6 8 RG [Ω],,,, t [s] 反偏安全工作区 IGBT, 逆变器 (RBSO) reversebiassafeoperatingareaigbt,inverter(rbso) IC=f(VCE) VGE=±5V,RGoff=.8Ω,Tvj=5 C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 7 6 IC, Modul IC, Chip 6 5 5 4 4 IC [] 3 IF [] 3 2 2 2 4 6 8 2 4 VCE [V],,2,4,6,8,,2,4,6,8 2, 2,2 2,4 VF [V] dateofpublication:23--4 5
FF3R2KE4 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=.8Ω,VCE=6V 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=3,VCE=6V 4 35 Erec, Erec, 35 3 Erec, Erec, 3 25 25 2 E [] 2 5 E [] 5 5 5 2 3 4 5 6 IF [] 2 4 6 8 2 4 6 8 RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) ZthJC : Diode, ZthJC [K/W], i: ri[k/w]: τi[s]:,9, 2,495,2 3,48,5 4,435,,,,, t [s] dateofpublication:23--4 6
FF3R2KE4 接线图 /circuit_diagram_headline 封装尺寸 /packageoutlines j n j n i i dateofpublication:23--4 7
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