FF3RKS 6mmC-SerienModulmitschnellemIGBTfürhochfrequentesSchalten 6mmC-seriesmodulewiththefastIGBTforhigh-frequencyswitching IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES V TC = 6 C, Tvj max = 5 C TC = 5 C, Tvj max = 5 C IC nom IC 3 37 tp = ms ICRM 6 TC = 5 C, Tvj max = 5 Ptot 95 W VGES +/- V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload IC = 3, VGE = 5 V IC = 3, VGE = 5 V VCE sat 3, 3,85 3,75 V V IC =, m, VCE = VGE, VGEth,5 5,5 6,5 V VGE = -5 V... +5 V QG 3, µc RGint, Ω f = MHz,, VCE = 5 V, VGE = V Cies, nf f = MHz,, VCE = 5 V, VGE = V Cres, nf VCE = V, VGE = V, ICES 5, m VCE = V, VGE = V, IGES n IC = 3, VCE = 6 V VGE = ±5 V RGon = 3, Ω td on,, 上升时间 ( 电感负载 ) Risetime,inductiveload IC = 3, VCE = 6 V VGE = ±5 V RGon = 3, Ω tr,6,7 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload IC = 3, VCE = 6 V VGE = ±5 V RGoff = 3, Ω td off,53,55 下降时间 ( 电感负载 ) Falltime,inductiveload IC = 3, VCE = 6 V VGE = ±5 V RGoff = 3, Ω tf,3, 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse IC = 3, VCE = 6 V, LS = 6 nh VGE = ±5 V, di/dt = 5 / RGon = 3, Ω Eon 5, 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse IC = 3, VCE = 6 V, LS = 6 nh VGE = ±5 V, du/dt = 75 V/ RGoff = 3, Ω Eoff 5, 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions VGE 5 V, VCC = 9 V VCEmax = VCES -LsCE di/dt tp, ISC 每个 IGBT/perIGBT RthJC,6 K/W 每个 IGBT/perIGBT λpaste=w/(m K)/λgrease=W/(m K) RthCH,3 K/W Tvj op - 5 C dateofpublication:3--3
FF3RKS 二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent It- 值 I²t-value VRRM V IF 3 tp = ms IFRM 6 VR = V, tp = ms, I²t 8 ²s 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent IF = 3, VGE = V IF = 3, VGE = V IF = 3, - dif/dt = 5 / (Tvj=5 C) VR = 6 V VGE = -5 V VF IRM,,7 3 3,55 V V 恢复电荷 Recoveredcharge IF = 3, - dif/dt = 5 / (Tvj=5 C) VR = 6 V VGE = -5 V Qr 8,, µc µc 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy IF = 3, - dif/dt = 5 / (Tvj=5 C) VR = 6 V VGE = -5 V Erec 7, 5, 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions 每个二极管 /perdiode RthJC, K/W 每个二极管 /perdiode λpaste=w/(m K)/λgrease=W/(m K) RthCH,6 K/W Tvj op - 5 C dateofpublication:3--3
FF3RKS 模块 /Module 绝缘测试电压 Isolationtestvoltage 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque 重量 Weight RMS, f = 5 Hz, t = min. VISOL,5 kv Cu 基本绝缘 (class,iec6) basicinsulation(class,iec6) 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal lo3 9, 3, 3,, CTI > 每个模块 /permodule λpaste=w/(m K)/λgrease=W/(m K) min. typ. max. mm mm RthCH, K/W LsCE nh TC=5 C, 每个开关 /perswitch RCC'+EE',7 mω Tstg - 5 C 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 3, - 6, Nm M,5-5, Nm G 3 g dateofpublication:3--3 3
FF3RKS 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=5V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=5 C 6 5 6 5 VGE =8V VGE =9V VGE =V VGE =V VGE =5V VGE =V IC [] 3 IC [] 3,,5,,5,,5 3, 3,5,,5 5, 5,5 6, VCE [V],,5,,5,,5 3, 3,5,,5 5, 5,5 6, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±5V,RGon=3Ω,RGoff=3Ω,VCE=6V 6 5 7 6 Eon, Eoff, 5 IC [] 3 E [] 3 5 6 7 8 9 VGE [V] 3 5 6 IC [] dateofpublication:3--3
FF3RKS 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±5V,IC=3,VCE=6V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) Eon, Eoff, ZthJC : IGBT, E [] 8 6 ZthJC [K/W], 6 8 6 8 RG [Ω] i: ri[k/w]: τi[s]:,38,,, 3,8,5,856,,,,, t [s] 反偏安全工作区 IGBT, 逆变器 (RBSO) reversebiassafeoperatingareaigbt,inverter(rbso) IC=f(VCE) VGE=±5V,RGoff=3Ω,Tvj=5 C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 7 65 6 55 IC, Modul IC, Chip 6 5 5 5 IC [] 35 3 IF [] 3 5 5 5 6 8 VCE [V],,,,6,8,,,,6,8,,,,6 VF [V] dateofpublication:3--3 5
FF3RKS 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=3Ω,VCE=6V 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=3,VCE=6V 8 Erec, 8 Erec, 6 6 E [] E [] 8 8 6 6 3 5 6 IF [] 6 8 6 8 RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) ZthJC : Diode, ZthJC [K/W], i: ri[k/w]: τi[s]:,6,,33, 3,3,5,9,,,,, t [s] dateofpublication:3--3 6
FF3RKS 接线图 /circuit_diagram_headline 封装尺寸 /packageoutlines j n j n i i dateofpublication:3--3 7
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