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1 WG 1 WG 2

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4 ITRSMetrology TMU WG 7 ITRSMetrology TMU WG 8

5 Gate Dense Lines 2009MetrologyRoadmap Flash 1/2 pitch (nm) DRAM ½ Pitch (nm) MPU Printed Gate Length (nm) MPU Physical Gate Length (nm) Wafer Overlay Control (nm) - 20% DRAM Wafer Overlay Control Double Patterning (nm) Lithography Metrology Physical CD Control (nm) Allowed Litho Variance = 3/4 Total Variance Wafer CD metrology tool uncertainty (3, nm) at P/T = Etched Gate Line Width Roughness (nm) <8% of CD Printed CD Control (nm) Allowed Litho Variance = 3/4 Total Variance Wafer CD metrology tool uncertainty (3s, nm) at P/T = Double Patterning Overlay Metrology Double Exposure and Etch - Process Range (nm) Double Exposure and Etch - Uncertainty (nm) Spacer PEE process First pass CD control (after etch) - Process Variation (nm) First pass CD control (after etch) - Uncertainty (nm) Front End Processes Metrology High Performance Logic EOT equivalent oxide thickness (EOT), nm Logic Dielectric EOT Precision 3nm Interconnect Metrology Barrier layer thick (nm) Void Size for 1% Voiding in Cu Lines Semiconductor Equipment Association 4.5 of 3.6 Japan Detection of Killer Pores at (nm) size WG 9 Gate Dense Lines 2010MetrologyRoadmapChanges Flash 1/2 pitch (nm) DRAM ½ Pitch (nm) MPU Printed Gate Length (nm) MPU Physical Gate Length (nm) Wafer Overlay Control (nm) - 20% DRAM Wafer Overlay Control Double Patterning (nm) Lithography Metrology Physical CD Control (nm) Allowed Litho Variance = 3/4 Total Variance Wafer CD metrology tool uncertainty (3, nm) at P/T = Etched Gate Line Width Roughness (nm) <8% of CD Printed CD Control (nm) Allowed Litho Variance = 3/4 Total Variance Wafer CD metrology tool uncertainty (3s, nm) at P/T = Double Patterning Overlay Metrology Double Exposure and Etch - Process Range (nm) Double Exposure and Etch - Uncertainty (nm) Spacer PEE process First pass CD control (after etch) - Process Variation (nm) First pass CD control (after etch) - Uncertainty (nm) Front End Processes Metrology High Performance Logic EOT equivalent oxide thickness (EOT), nm Logic Dielectric EOT Precision 3nm Interconnect Metrology Barrier layer thick (nm) Void Size for 1% Voiding in Cu Lines Semiconductor Equipment Association 4.5of Japan Detection of Killer Pores at (nm) size WG 10

6 ITRSMetrology CSNE,ISMI,NIST) ERM/ERD ISMI ( NIST STRJWG14 SEAJ WG 11 ITRSMetrology TMU WG 12

7 2010DoublePatterning3xnm 2xnm 1nm 2xnm 2xnm / WG 13 FocusonToday QC NPW,EES TMU ROI WG 14

8 YDD CDSEM,OL 1995now CA Y exp( UV,DUV)CDSEM,OCD, WG xnm CMP or etc WG 16

19801995 1995now nm Future YYr Ys/ROI (3D,etc) WG 17 tan cos CDSEM OCD,MBL,etc

9 now nm Future YYr Ys/ROI (3D,etc) WG 17 tan cos CDSEM OCD,MBL,etc VM Low DegreeofVirtuality (DOV High DOV VMRMRealMetrology2014 VMTMU,OCROI) WG 18

10 MeasurementUncertainty Robustness Issue? ThroughPut MetrologyCost Low Degree of Virtuality (DOV High WG 19 ITRSMetrology TMU WG 20

11 TMUTotalMeasurementUncertainty OC ReturnonInvestment(ROI) ROI WG 21 ITRSMetrology TMU WG 22

12 TMU(TotalMeasurementUncertainty) ISOGuidetotheExpressionofUncertaintyin MeasurementGUM,1993 Uncertainty m VLSI standard AFMTEM WG SPIE Measurement Uncertainty TMU of Metrology Tool precisionmatching sampling other precision matching sampling other :shorttermreproducibilityandlongtermstabilityforsingletool :deviationoftoolmatchingformultipletools :samplingissues :interactionbetweentoolandspecimen,etc. Measurement Uncertainty Tool Uncertainty CD of Tool Under Test (CD-SEM) Mandel linear regression CD Offset CD of Reference Tool (TEM, AFM) WG 24

13 Gate Dense Lines 2010MetrologyRoadmapChanges Flash 1/2 pitch (nm) DRAM ½ Pitch (nm) MPU Printed Gate Length (nm) MPU Physical Gate Length (nm) Wafer Overlay Control (nm) - 20% DRAM Wafer Overlay Control Double Patterning (nm) Lithography Metrology Physical CD Control (nm) Allowed Litho Variance = 3/4 Total Variance Wafer CD metrology tool uncertainty (3, nm) at P/T = Etched Gate Line Width Roughness (nm) <8% of CD Printed CD Control (nm) Allowed Litho Variance = 3/4 Total Variance Wafer CD metrology tool uncertainty (3s, nm) at P/T = Double Patterning Overlay Metrology Double Exposure and Etch - Process Range (nm) Double Exposure and Etch - Uncertainty (nm) Spacer PEE process First pass CD control (after etch) - Process Variation (nm) First pass CD control (after etch) - Uncertainty (nm) Front End Processes Metrology High Performance Logic EOT equivalent oxide thickness (EOT), nm Logic Dielectric EOT Precision 3nm Interconnect Metrology Barrier layer thick (nm) Void Size for 1% Voiding in Cu Lines Detection of Killer Pores at (nm) Semiconductor size Equipment Association 4.5 of Japan WG 25 CDSEMTMU Measurement Uncertainty precisionmatching sampling other *ITRS, 2007 Edition, Metrology Tool Uncertainty tool tool 3 shortterm long term matching > 65 nm : Short-term Reproducibility 45 nm : Long-term Stability & Tool Matching < 32 nm : CD-SEM Tool Management in Production 3 tool 0.5nm@22nmFlash½pitch WG 26

CDSEMTMU 0.0 Data Fit Mandel Astigmatism Just adjusted PG level (A.U.) -0.1-0.2-0.3-0.

7 th week: Fine axis alignment Before fine alignment PG level (Converted to CD) (nm) 0.

14 CDSEMTMU 0.0 Data Fit Mandel Astigmatism Just adjusted PG level (A.U.) PG= x CD Small change +0.2 nm PG level Large change +1.4 nm CD CD (nm) WG 27 CDSEMTMU #4 1 st week: Aperture change without fine axis alignment 7 th week: Fine axis alignment Before fine alignment PG level (Converted to CD) (nm) #1 #2 # Measurement week WG 28 #4 After fine alignment CD -0.1 nm 2xnmTool Uncertainty

15 ITRSMetrology TMU WG 29 by variables) by attributes) sampling sampling calculate acceptancevariablesq q xk countdefects Is q in spec.? Is # of defects less than c? RejectLot AcceptLot AcceptLot WG 30

16 or Acceptance number : c = 1 Lots Line sampling #defects =1 c ACCEPTED! count defects sampling #defects =1 c REJECTED! WG 31 ( t ) Acceptance coefficients : k Lots Line sampling Spec ACCEPTED! calculatexk sampling Spec REJECTED! WG 32

17 OC 1920 WG 33 OC 1 OCOperating Characteristic Curve p 0,11,0 L(p) OCp c p c OC WG 34 1

18 L(p) Producer's risk Consumer's risk AQL LQL AQL:AcceptableQualityLevel LQL:LimitingQualityLevel WG 35 CD (n,k)=(18,2.1) L(p) (n,c)=(35,0) WG 36

19 ITRSMetrology TMU WG 37 2xnm ROI (VM)MM InchipCoOROI / SEAJ STRJWG14 WG 38

20 etc WG 39 WG 40

21 WG IC20 ( Ranking Ranking Company Revenue Revenue Applied Materials 3,508 7, % 15.8% 3 2 ASML 2,268 5, % 11.8% 2 3 Tokyo Electron 2,324 5, % 10.7% 6 4 Lam Research 1,198 3, % 6.3% 5 5 KLA-Tencor 1,316 2, % 4.9% 7 6 Dainippon Screen 887 1, % 3.6% 10 7 Teradyne 552 1, % 3.0% 8 8 ASM International 694 1, % 3.0% 9 9 Novellus System 582 1, % 2.6% Advantest 430 1, % 2.4% 4 11 Nikon 1,342 1, % 2.4% Varian Semiconductor % 2.0% Aixtron AG % 2.0% Hitachi High Technologies % 1.9% Veeco Instruments % 1.7% Kulicke & Soffa % 1.6% DISCO Corporation % 1.4% Hitachi Kokusai Electric % 1.3% Verigy % 1.1% BE Semiconductor Industries % 0.9% Others 6,324 9, % 19.6% Total 24,300 47, % 100% WG 42

22 SEMI WG 43 WG 44

23 4,000 SEM 3,500 VLSIResearch 3,000 WG 45 2,500 2,000 1,500 1, ,000 2, , , ,000 1, , WG 46

24 IC Brightfield Inspection Tools (Total sales in $M, by supplier, calendar year) AOW MSTRID COMPANY NA KLAC KLA-Tencor NA AMAT Applied Materials Total IC Darkfield Inspection (Total sales in $M, by supplier, calendar year) AOW MSTRID COMPANY NA KLAC KLA-Tencor JA HTL Hitachi High-Technologies Corporation Total IC E-beam Inspection (Total sales in $M, by supplier, calendar year) AOW MSTRID COMPANY NA KLAC KLA-Tencor TW HERE Hermes-Epitek JA HTL Hitachi High-Technologies Corporation Total IC Defect Review Stations (Total sales in $M, by supplier, calendar year) AOW MSTRID COMPANY NA AMAT Applied Materials NA KLAC KLA-Tencor Total WG WG

25 IC Reticle Defect Inspection Systems (Total sales in $M, by supplier, calendar year) AOW MSTRID COMPANY NA KLAC KLA-Tencor NA AMAT Applied Materials Total IC Reticle CD Measurement Systems (Total sales in $M, by supplier, calendar year) AOW MSTRID COMPANY NA KLAC KLA-Tencor NU NU NU JA JEOL JEOL Ltd Total IC Reticle Repair Systems (Total sales in $M, by supplier, calendar year) AOW MSTRID COMPANY EU CZI Carl Zeiss SMT AG JA SKI Seiko Instruments Inc Total WG 49 DFM DFY EndofLine Spansion2009 WG 50

26 382, , , , ,7641,002,250 1,052,909 1,072, , , , , , , , , , , , ,653 76,454 77,826 78,228 75,083 68, , , ,608 98,764 79,863 13,415 12,794 14,547 15,558 17,945 23,040 21,715 16,614 19,629 16,222 9,961 8,707 9,756 9,326 8, , , , , ,266 18,780 18,926 14,543 9,560 6,000 94,799 88,105 94,356 81,621 58,820 22,579 33,074 27,315 16,115 8,103 34,122 35,859 48,694 40,843 43,343 5,655 5,411 5,277 4,502 3, , , , , ,563 42,052 45,462 46,992 47,141 35,217 82,241 93,610 90,247 74,582 50,191 81,452 86,709 90,255 84,180 81,391 WG 51 WG 52

27 2,500,000 2,000,000 1,500,000 1,000, ,000 0 WG , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,585 97, , ,136 92, ,291 94,128 81,089 89,067 94,637 99,460 60,302 82,709 49,422 40,335 39,348 42,186 45,387 34,667 48,246 33,949 38,861 37,843 37,574 44,309 44,314 26,569 29,234 28,736 27,656 33,807 28,246 27, WG 54

28 WG 55 WG 56

29 WG 57 WG 58

30 WG 59 WG 60

31 WG % WG 62

32 WG 63 WG 64

33 WG 65 WG 66

34 WG 67 WG 68

35 WG 69 WG 70

36 LSI LSI WG 71 LSI WG 72

37 WG 73 WG 74

38 WG 75 1m WG 76

39 WG 77 WG 78

40 WG 79 LSI WG 80

41 OBIRCH WG 81 (EBAC) WG 82

42 WG 83 WG 84

43 WG 85 (SIL) WG 86

44 WG 87 WG 88

45 WG 89 WG 90

46 WG 91 WG 92

47 WG 93

第 1 部分目錄第 1 部分計畫執行成果摘要 Ⅰ 頁次

第 1 部分目錄第 1 部分計畫執行成果摘要 Ⅰ 頁次經濟部經濟部工業局 102 年度專案計畫期末執行成果報告計畫名稱 : 推動半導體製程設備暨零組件躍升計畫契約編號 :10231101004 執行期間 : 全程 : 自 99 年 01 月 25 日至 102 年 12 月 20 日止本年度 : 自 102 年 01 月 01 日至 102 年

Microsoft PowerPoint - 髫ｪ蝓滂ｽｸ・ｬWG陷茨ｽｨ驕ｶ・ｰ(隴崢驍ｨ繧会ｽｨ・ｿ)

Microsoft PowerPoint - 髫ｪ蝓滂ｽｸ・ｬWG陷茨ｽｨ驕ｶ・ｰ(隴崢驍ｨ繧会ｽｨ・ｿ)