A wide-band class-A linear power amplifier ( MHz) with 2 transistors BLV33F Application Note ECO8005

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1 APPLICATION NOTE A wide-band class-a linear power amplifier ( MHz) with 2 transistors BLV33F

2 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER 4 ADJUSTMENTS OF THE AMPLIFIER 5 ASSEMBLING OF THE AMPLIFIER AND MECHANICAL DATA 6 MEASURED RESULTS 7 CONCLUSION 8 REFERENCES 1998 Mar 23 2

3 1 ABSTRACT For application in driver or final stages of TV-transposers in Band III ( MHz) a linear wideband power amplifier has been designed with 2 transistors BLV33F, coupled by means of 3 db 90 hybrids. Each transistor is adjusted in Class-A at V CE = 25 V and I C = 3.25 A. A demonstration model showed a peak sync. output power of 40 W at a 3-tone I.M. distortion between 52 and 53 db. At this power level the cross-modulation varied from 15 to 18%. The power gain is between 13.3 and 13.6 db. For natural convection cooling the heatsink temperature is 40 C above ambient temperature. 2 INTRODUCTION For application in T.V. transposers and transmitters for Band III a wideband linear power amplifier has been designed with 2 transistors BLV33F, coupled by means of 3 db 90 hybrids. Each transistor is adjusted in Class-A at V CE =25V and I C = 3.25 A. Note: The BLV33F is a high gain, internally matched, 1/2 inch 6 leads flange version of the BLV33. 3 DESIGN OF THE AMPLIFIER For class-a operation the BLV33F is specified at V CE = 25 V, I C = 3.25 A. The corresponding typical gain, input and load impedance are given in Table 1: Table 1 FREQ. (MHz) GAIN (db) INPUT IMPEDANCE (Ω) LOAD IMPEDANCE (Ω) j j j j j j0.51 To obtain a high linear output and at the same time good input and output matching (V.S.W.R. 1.2) 3 db 90 hybrids are used. The reflected input power will be absorbed in the resistor, matching the isolated port (see Fig.1). For detailed information on computer-aided design (carried out by Mr. Hilbers Central Application Laboratory) see Refs 1, 2 and 3. The transistors used in this particular amplifier are typical products, measured in a narrow band test amplifier and specified as follows: V CE =25V I C = 3.25 A Th = 70 Table 2 Transistor type BLV33F Batch no. MD 8-16 no.7 MD 8-16 no. 10 Vision frequency MHz Output power (peak sync) 17.7 W 18 W Intermod. product 55 db 55 db Gain 14.2 db 14.2 db 4 ADJUSTMENTS OF THE AMPLIFIER The amplifier consists of two equal BLV33F branches (see Fig.1) and both transistors are separately biased at V CE =25V I C = 3.25 A. The printed circuit board of the 2 BLV33F wideband amplifier is given in Fig.2 and schematic diagram + lay-out of the bias unit is given in Fig.3. Figure 9 at the end of the report shows the lay-out of the amplifier with 1998 Mar 23 3

4 the situation of the components. Each branch was adjusted for maximum and flat gain by means of a high power sweep with a frequency range from MHz. The output of the amplifier was levelled at 40 W which means about 50% of the D.C. input power. After that, both branches are coupled by means of 3 db 90 hybrids. 5 ASSEMBLING OF THE AMPLIFIER AND MECHANICAL DATA Due to the dimensions of the printed circuit board ( mm) 2 extruded blackened aluminium heat sinks (cat.no ) are screwed on an aluminium plate (thickness 12 mm) which on its turn is screwed on the heat sink. Special attention has been paid to the surface finishing to keep the thermal resistance as low as possible. Dimensions of the amplifier: l = 224 mm w = 223 mm h = 113 mm. Weight: 7.5 kg. 6 MEASURED RESULTS In Fig.4 the typical results of crossmodulation and 3-tone intermod. product (from MHz) have been given for peak sync output powers of 30 W and 40 W. Figure 5 shows peak sync output power as function of 3-tone intermod. products (measured on channel 12: Vision freq MHz Sound freq MHz). In Figs 6 and 7 the forward and reverse transducer gain as well as input and output voltage standing wave ratio are given. The measuring test set-up is depicted in Fig.8. Note: Signal levels 3-tone measurements: Vision carrier 8 db; Sound carrier 7 db; Sideband 16 db; 0 db corresponds to peak sync. Signals levels crossmodulation: Vision carrier switched from 20 db to 0 db; Sound carrier 7 db; 0 db = peak sync level Crossmodulation is defined as the voltage variation (%) of the sound carrier. 7 CONCLUSION Two transistors BLV33F, coupled by means of 3 db 90 hybrids, can deliver an output power (peak sync) of typ. 40 W for 52 db 3-tone intermodulation. At 40 W output the crossmodulation varied from 15% to 18% in Band III ( MHz). The gain of the amplifier is typically db. The required D.C. input is approx. 165 W. Using a high power sweep with adjustable transistor output levelling provides a suitable method to adjust a linear wideband power amplifier. 8 REFERENCES Ref.1: G.L. Matthaei Tables of Chebyshev Impedance Transforming Network of Low-Pass Filter Form. Proceedings of the IEEE August 1964, pp Ref.2: A.H. Hilbers and M.J. Köppen A wideband linear power amplifier ( MHz) with two transistors BLW34. C.A.B. report ECO7901. Ref.3: R.F.F. Zwanen A wideband Class-A linear power amplifier ( MHz) with two transistors BLV33. C.A.B. report ECO Mar 23 4

5 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.this text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.this text is here inthis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be Mar 23 5 R.F. input R1 R2 in iso C1 0 H1 90 C2 C3 C7 L1 L4 C14 ook, full pagewidth C13 C27 L3 L7 L9 L13 L15 L19 L17 BLV33F,,,,,,, C4 C8 C11 C15 C22 C32 C5 C9 C12 C16 C23 C34 L2 V b R3 C19 L8 L10 L14 L16 L20 L5 L18 L22,,,, BLV33F,,,,,, L11 V c C25 C26 C21 C31 L21 C35 90 iso H2 0 in C36 R5 R6 R.F. output Philips Semiconductors C6 C10 C17 C24 C33 L12 L6 C28 C18 C29 R4 C20 C30 V b V c Fig.1 2 BLV33F Band III Class A linear power amplifier. MGP959

6 handbook, full pagewidth MGP986 Fig.2 Printed circuit board 2 BLV33F wideband power amplifier Mar 23 6

7 Table 3 Parts list: BLV33F Band III Class A linear power amplifier ( MHz) C1 = C2 = C7 = C9 10 pf chip capacitor C3 = C6 = C32 = C to 10 pf film dielectric trimmer (cat. no ) C4 = C5 = C35 = C pf chip capacitor C8 = C10 39 pf chip capacitor C11 = C12 68 pf chip capacitor C13 = C18 = C27 = C pf chip capacitor C14 = C15 = C16 = C pf chip capacitor C19 = C20 = C26 = C nf metallized film capacitor (cat. no ) C21 = C22 = C23 = C24 56 pf chip capacitor C25 = C30 10 µf (40 V) electrolytic capacitor (cat. no ) C31 = C33 18 pf chip capacitor (chip capacitors: ATC type 100B C MSX 500) R1 = R2 = R5 = R6 100 Ω power metal film resistor PR52 type (cat. no ) R3 = R4 10 Ω carbon resistor CR68 type H1 = H2 3 db 90 coupler, model no , range 125 to 250 MHz, ANAREN MICROWAVE INC. L1 = L2 25 nh 2 turns enamelled Cu wire (1 mm); int. diam. 5 mm; leads 2 3mm L3 = L6 90 nh 5 turns closely wound enamelled Cu wire (1.5 mm) int. diam. 6.5 mm; length 5 mm; leads 2 9mm L4 = L5 60 Ω stripline; w = 2 mm; length = 30 mm L7 = L8 30 Ω stripline; w = 6 mm; length = 11 mm L9 = L10 40 Ω stripline; w = 4 mm; length =5mm L11 = L12 20 nh Cu strip (1 mm); length = 17 mm; h = 5 mm; w = 4 mm L13 = L14 30 Ω stripline; w = 6 mm; length = 17 mm L15 = L16 30 Ω stripline; w = 6 mm; length =4mm L17 = L18 28 nh 2 turns enamelled Cu wire (1.5 mm); int. diam. 6.5 mm; length 9 mm; leads 2 3mm L19 = L20 30 Ω stripline; w = 6 mm; length =6mm L21 = L22 stripline; w = 3 mm; length = 15 mm The striplines are printed on double Cu-clad printed circuit board with epoxy fibre-glass dielectric (ε r = 4.5); thickness 1/16 inch Mar 23 7

8 Table 4 Parts list: Class A bias circuit for a single transistor BLV33F R1 1 carbon resistor CR25 type R2 100 Ω preset potentiometer CTP10 type R3 10 Ω carbon resistor CR25 type R Ω carbon resistor CR25 type R5 = R6 = R7 1.8 Ω rectangular wirewound resistor EH707 type R8 = R9 180 Ω carbon resistor CR25 type R10 33 Ω carbon resistor CR25 type C1 = C3 100 nf metallized film capacitor C2 100 pf ceramic capacitor C4 10 µf electrolytic capacitor D1 BZY 88 (3V3) D2 BY 206 T1 BD Mar 23 8

9 handbook, full pagewidth V s (+ 27 V) R5 D2 R1 R6 R7 C4 e b c TR1 BD136 C1 C2 D1 R2 R3 R8 C3 R9 V c V b V ce = 25 V,,,,, BLV33F R4 R10 MGP983 handbook, full pagewidth 55 R5 C1 C2 R6 72 V s D1 D2 R1 R3 R7 C4 C3 R2 R8 R9 V c e c b V b R4 R10 MGP984 Fig.3 Class A bias circuit for a single transistor BLV33F Mar 23 9

10 20 handbook, full pagewidth MGP960 crossmod. (%) W P o sync W 4 0 db 7 db V (%) 0 db = P o sync 20 db f (MHz) handbook, full pagewidth intermod. product (db) 48 intermod. product 8 db 16 db 0 db = P o sync 7 db MGP P o sync 40 W W f (MHz) BLV33F Class A linear power amplifier. V CE 25 V I C = A T amb 23 C Th=65 C. Fig.4 Crossmodulation and intermodulation products of the 2 BLV33F wideband Band III linear power amplifier Mar 23 10

11 45 handbook, full pagewidth intermod. product (db) 50 MGP db 16 db P o sync 7 db 65 intermod. product MHz MHz P o sync (W) 2 BLV33F Band III amplifier. V CE = 25 V; I C = A; T amb =23 C; Th = 65 C. Fig.5 3-tone intermodulation product as function of Po sync. Vision freq. 224 MHz; sound freq MHz Mar 23 11

12 15 handbook, halfpage MGP963 (db) S (MHz) a. Forward transducer gain. handbook, halfpage MGP964 (db) V.S.W.R S (MHz) b. Input voltage standing wave ratio. Fig.6 2 BLV33F wideband Band III power amplifier Mar 23 12

13 20 handbook, halfpage MGP965 (db) (MHz) a. Reverse transducer gain. handbook, halfpage MGP966 (db) V.S.W.R S (MHz) b. Output voltage standing wave ratio. Fig.7 2 BLV33F wideband power amplifier Mar 23 13

14 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.this text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.this text is here inthis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be Mar POWER DIVIDER HP778D 6 db DIRECT. COUPLER VAR. ATT. COAX SWITCH BAND III WIDEBAND POWER AMPLIFIER D.U.T. 2 BLV33F COAX SWITCH andbook, full pagewidth 10 db ATT. (100W) POWER DIVIDER HP778D CIRCULATOR RANGES: 170 to 200 MHz 190 to 230 MHz COAX SWITCH DIRECT. COUPLER ALC ATT. 6 db BLV33 AMPLIFIER 8554L SPECTRUM ANALYZER 20 db ATT. 3 db HYBRID VAR. ATT. 10 db CD 50-4 HP435A WATT METER 20 db ATT. 10 db S.M.L.U. R.F. GEN. ATT. Philips Semiconductors SWOB III S.M.L.U. SWEEP SWEEP PM5171 ALC S.M.L.U. R.F. GEN. COAX DETECTOR 20 db D.C. AMPLIFIER BLV33 AMPLIFIER POWER SWEEP TEST SET-UP Fig.8 Test set up 2 BLV33F Band III power amplifier. BLV33 AMPLIFIER BLV33 AMPLIFIER VAR. ATT. 10 db VAR. ATT. 10 db S.M.L.U. R.F. GEN. S.M.L.U. R.F. GEN. 170 to 230 MHz 3-TONE TEST SET-UP MGP985

15 Unfortunately the numbers in the lay-out of Fig.9 do not correspond with those of the schematic diagram of Fig.1. The reader is referred to the translation Table 5. Table 5 NUMBER IN LAY-OUT (see Fig.9) R1 R2 R3 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 C17 C18 C19 L1 L3 L6 L9 NUMBER OF SCHEMATIC DIAGRAM (see Fig.1) R3 R5 R6 C1 C3 C4 C7 C8 C11 C14 C15 C19 C13 C21 C22 C25 C26 C27 C31 C32 C35 L1 L3 L11 L Mar 23 15

16 handbook, full pagewidth V b V c R1 C10 C15 C14 input IN C11 C8 C5 L1 C6 C3 C7 C6 C9 BLV33F C4 L3 C16 L6 C12 L9 C13 C19 C18 C17 R2 R3 HYBRID COUPLER HYBRID COUPLER IN output V b V c MGP987 Fig.9 Lay-out of amplifier with situation of components Mar 23 16

17 a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel , Fax Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel , Fax Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, MINSK, Tel , Fax Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel , Fax Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel , Fax Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel , Fax Finland: Sinikalliontie 3, FIN ESPOO, Tel , Fax France: 51 Rue Carnot, BP317, SURESNES Cedex, Tel , Fax Germany: Hammerbrookstraße 69, D HAMBURG, Tel , Fax Greece: No. 15, 25th March Street, GR TAVROS/ATHENS, Tel /239, Fax Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI , Tel , Fax Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel , Fax Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel , Fax Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, MILANO, Tel , Fax Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel , Fax Korea: Philips House, Itaewon-dong, Yongsan-ku, SEOUL, Tel , Fax Malaysia: No. 76 Jalan Universiti, PETALING JAYA, SELANGOR, Tel , Fax Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel , Fax New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel , Fax Norway: Box 1, Manglerud 0612, OSLO, Tel , Fax Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel , Fax Poland: Ul. Lukiska 10, PL WARSZAWA, Tel , Fax Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, MOSCOW, Tel , Fax Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel , Fax Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel , Fax South America: Al. Vicente Pinzon, 173, 6th floor, SÃO PAULO, SP, Brazil, Tel , Fax Spain: Balmes 22, BARCELONA, Tel , Fax Sweden: Kottbygatan 7, Akalla, S STOCKHOLM, Tel , Fax Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel , Fax Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel , Fax Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel , Fax Turkey: Talatpasa Cad. No. 5, GÜLTEPE/ISTANBUL, Tel , Fax Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, KIEV, Tel , Fax United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel , Fax United States: 811 East Arques Avenue, SUNNYVALE, CA , Tel Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, BEOGRAD, Tel , Fax For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax Internet: Philips Electronics N.V SCA57 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands Date of release: 1998 Mar 23

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