BLF2047L_2

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1 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 Supersedes data of 1999 Apr Dec 06

2 FEATURES High power gain Easy power control Excellent ruggedness Source on underside eliminates DC isolators, reducing common mode inductance Designed for broadband operation (1.8 to 2 GHz) Internal input and output matching for high gain and efficiency. PINNING PIN DESCRIPTION 1 drain 2 gate 3 source, connected to flange APPLICATIONS Common source class-ab operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range. handbook, halfpage DESCRIPTION Top view MBK394 Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Fig.1 Simplified outline SOT502A. QUICK REFERENCE DATA RF performance at T h =25 C in a common source test circuit. MODE OF OPERATION f (MHz) V DS (V) P L (W) G p (db) η D (%) d im (dbc) Two-tone, class-ab f 1 = 2000; f 2 = (PEP) >10.5 >30 25 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT V DS drain-source voltage 65 V V GS gate-source voltage ±15 V I D DC drain current 9 A T stg storage temperature C T j junction temperature 200 C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B Dec 06 2

3 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT thermal resistance from junction to T h =25 C, P tot = 152 W, note K/W heatsink R th j-h Note 1. Determined under specified RF operating conditions. CHARACTERISTICS T j =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS drain-source breakdown voltage V GS = 0; I D = 1.4 ma 65 V V GSth gate-source threshold voltage V DS = 10 V; I D = 140 ma V I DSS drain-source leakage current V GS = 0; V DS =26V 10 µa I DSX on-state drain current V GS =V GS th +9V; V DS =10V 18 A I GSS gate leakage current V GS = ±15 V; V DS =0 250 na g fs forward transconductance V DS = 10 V; I D =5A 4 S R DSon drain-source on-state resistance V GS =V GS th +9V; I D =5A 0.17 Ω C rss feedback capacitance V GS = 0; V DS = 26 V; f = 1 MHz 3.4 pf APPLICATION INFORMATION RF performance in a common source class-ab circuit. T h =25 C; R th j-h = 1.15 K/W, unless otherwise specified. MODE OF OPERATION Ruggedness in class-ab operation f (MHz) V DS (V) I DQ (ma) The is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: V DS = 26 V; I DQ = 350 ma; P L = 65 W; f = 2000 MHz. P L (W) G p (db) η D (%) d im (dbc) Two-tone, class-ab f 1 = 2000; f 2 = (PEP) >10.5 > Dec 06 3

4 15 handbook, halfpage G p (db) G p MGS η D (%) 40 0 handbook, halfpage d im (dbc) 10 MGS η D d 3 d 5 d P L (PEP) (W) P L (PEP) (W) f 1 = 2000 MHz; f 2 = MHz; V DS =26V; I DQ = 350 ma; T h 25 C. f 1 = 2000 MHz; f 2 = MHz; V DS =26V; I DQ = 350 ma; T h 25 C. Fig.2 Power gain and drain efficiency as a function of load power; typical values. Fig.3 Intermodulation distortion as a function of load power; typical values. 8 handbook, halfpage Z i (Ω) 6 MGS952 4 handbook, halfpage Z L (Ω) 2 R L MGS953 4 x i 0 2 r i X L f (GHz) f (GHz) V DS = 26 V; I D = 350 ma; P L = 65 W; T h 25 C. V DS = 26 V; I D = 350 ma; P L = 65 W; T h 25 C. Fig.4 Input impedance as a function of frequency (series components); typical values. Fig.5 Load impedance as a function of frequency (series components); typical values Dec 06 4

5 handbook, full pagewidth F1 R1 C5 C6 V gate C15 C11 C13 C14 C12 R2 C16 V dd C17 C4 L4 L13 C10 L2 L6 L10 L11 L15 L17 input 50 Ω C3 L20 L1 L3 L5 L7 L8 L9 L12 L14 L16 L18 C9 L19 output 50 Ω C2 C1 C7 C8 MGS954 Fig.6 Class-AB test circuit at f = 2 GHz Dec 06 5

6 List of components (see Figs. 6 and 7) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2, C7 and C8 Tekelec variable capacitor; type to 4.5 pf C3, C9 multilayer ceramic chip capacitor; note 1 12 pf C4, C10 multilayer ceramic chip capacitor; note 2 12 pf C5, C12 and C16 electrolytic capacitor 4.5 µf; 50 V C6, C11 and C15 multilayer ceramic chip capacitor; note 1 1 nf C13 and C17 electrolytic capacitor 100 µf; 63 V C14 multilayer ceramic chip capacitor 100 nf F1 Ferroxcube chip-bead 8DS3/3/8/9-4S L1 50 Ω mm L Ω mm L3 50 Ω mm L4 6 Ω mm L5 50 Ω mm L6 9 Ω mm L7 50 Ω mm L Ω mm L Ω mm L10 and L11 stripline; note Ω 7 37 mm L Ω mm L Ω mm L Ω 6.4 6mm L15 10 Ω mm L16 50 Ω mm L Ω mm L18 50 Ω mm L19 50 Ω mm L20 50 Ω mm R1 and R2 metal film resistor 10 Ω, 0.6 W Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (ε r = 2.2); thickness 0.79 mm Dec 06 6

7 handbook, full pagewidth INPUT PH OUTPUT PH V GS V DD C6 R1 C5 C17 C16 C11 R2 F1 C13 C15 C14 C4 C10 C12 C3 C2 C1 C7 C8 C9 INPUT PH OUTPUT PH MGS955 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (ε r = 2.2), thickness 0.79 mm. The other side is unetched and serves as a ground plane. Fig.7 Component layout for 2 GHz class-ab test circuit Dec 06 7

8 PACKAGE OUTLINE Flanged LDMOST package; 2 mounting holes; 2 leads SOT502A D A 3 F D 1 U 1 B q C c 1 L H U 2 p E 1 E w 1 M A M B M A 2 b w 2 M C M Q mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D 1 E E 1 F H L p Q q U 1 U 2 w 1 w 2 mm inches OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT502A Dec 06 8

9 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Dec 06 9

10 NOTES 1999 Dec 06 10

11 NOTES 1999 Dec 06 11

12 a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel , Fax Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel , Fax Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, MINSK, Tel , Fax Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel , Fax Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel , Fax China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel , Fax Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel , Fax Finland: Sinikalliontie 3, FIN ESPOO, Tel , Fax France: 51 Rue Carnot, BP317, SURESNES Cedex, Tel , Fax Germany: Hammerbrookstraße 69, D HAMBURG, Tel , Fax Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI , Tel , Fax Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav , JAKARTA 12510, Tel ext. 2501, Fax Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel , Fax Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel , Fax Italy: PHILIPS SEMICONDUCTORS, Via Casati, MONZA (MI), Tel , Fax Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO , Tel , Fax Korea: Philips House, Itaewon-dong, Yongsan-ku, SEOUL, Tel , Fax Malaysia: No. 76 Jalan Universiti, PETALING JAYA, SELANGOR, Tel , Fax Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel , Fax Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel , Fax New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel , Fax Norway: Box 1, Manglerud 0612, OSLO, Tel , Fax Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel , Fax Poland: Al.Jerozolimskie 195 B, WARSAW, Tel , Fax Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, MOSCOW, Tel , Fax Singapore: Lorong 1, Toa Payoh, SINGAPORE , Tel , Fax Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., Main Road Martindale, 2092 JOHANNESBURG, P.O. Box Newville 2114, Tel , Fax South America: Al. Vicente Pinzon, 173, 6th floor, SÃO PAULO, SP, Brazil, Tel , Fax Spain: Balmes 22, BARCELONA, Tel , Fax Sweden: Kottbygatan 7, Akalla, S STOCKHOLM, Tel , Fax Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel Fax Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel , Fax Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel , Fax Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr Umraniye, ISTANBUL, Tel , Fax Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, KIEV, Tel , Fax United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel , Fax United States: 811 East Arques Avenue, SUNNYVALE, CA , Tel , Fax Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, BEOGRAD, Tel , Fax For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax Internet: Philips Electronics N.V SCA68 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands /02/pp12 Date of release: 1999 Dec 06 Document order number:

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