A wide-band class-A linear power amplifier ( MHz) with two transistors BLV33 Application Note ECO7904

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1 APPLICATION NOTE A wide-band class-a linear power amplifier ( MHz) with two transistors

2 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER 4 ADJUSTMENTS OF THE AMPLIFIER 5 ASSEMBLING OF THE AMPLIFIER AND MECHANICAL DATA 6 MEASURED RESULTS 7 CONCLUSION 8 REFERENCES 1998 Mar 23 2

3 1 ABSTRACT For application in driver or final stages of TV-transposers in band III ( MHz) a linear wideband power amplifier has been designed with 2 transistors, coupled by means of 3 90 hybrids. Each transistor is adjusted in class-a at V CE = 25 V and I C = 3.25 A. A demonstration model showed a peak sync output power of 40 W at a 3-tone I.M. distortion between 56 and 58. At this power level the cross-modulation varied from 6 to 7.5%. The power gain is between 8.35 and INTRODUCTION For application in T.V. transposers and transmitters for band III a wideband linear power amplifier has been designed with 2 transistors, coupled by means of 3 90 hybrids. Each transistor is adjusted in class-a at V CE =25V and I C = 3.25 A. 3 DESIGN OF THE AMPLIFIER For class-a operation the is specified at V CE = 25 V, I C = 3.25 A. The corresponding typical gain, input and load impedance are given below: Table 1 FREQ. (MHz) GAIN () INPUT IMPEDANCE (Ω) LOAD IMPEDANCE (Ω) j j j j j j0.52 A computer-aided circuit design, carried out by Mr. Hilbers (Central Application Laboratory) indicated a gain of 9.1 ±0.1 and V.S.W.R. figures of 4.3 (170 MHz), 2.78 (202 MHz) and 1.18 at 230 MHz for a single amplifier. To obtain a high linear output and at the same time good input and output matching (V.S.W.R. 1.2) 3 90 hybrids are used. The reflected input power will be absorbed in the resistor, matching the isolated port (see Fig.1). There are some small differences (value and place of chip capacitors) between the theoretical design and practical circuit. For detailed information on computer-aided design see Refs 1 and 2. Mainly due to the insertion loss of the 3 hybrids the gain drops from 9 to 8.5. The transistors used in this particular amplifier are typical products, measured in a narrow band test amplifier and specified as follows: V CE =25V I C = 3.25 A T h =70 C 1998 Mar 23 3

4 Table 2 Transistor type Batch no. MD 8-14 no 5 MD 8-14 no 10 Vision frequency MHz Output power (peak sync) 22.9 W 22.6 W Intermodulation product Gain ADJUSTMENTS OF THE AMPLIFIER The amplifier consists of two equal branches (see Fig.1) and both transistors are separately biased at V CE =25V, I C = 3.25 A. A schematic diagram and lay-out of the bias unit is given in Fig.2. Each branch was adjusted for maximum and flat gain by means of a high power sweep with a frequency range from 170 to 230 MHz. The output power of the amplifier was levelled at 40 W which means about 50% of the D.C. input power. After that, both branches are coupled by means of 3 90 hybrids, input and output matching of the complete amplifier are adjusted below a V.S.W.R. of 1.2 with the aid of capacitors C1-C2-C37-C38 as shown in Fig.1. 5 ASSEMBLING OF THE AMPLIFIER AND MECHANICAL DATA Due to the dimensions of the p.c. board ( mm) 2 extruded blackened aluminium heatsinks (cat. no ) are screwed together. The transistors are screwed on an aluminium plate (thickness 12 mm) which on its turn is screwed on the heatsink. Special attention has been paid to the surface finishing to keep the thermal resistance as low as possible. Figure 3 showed the p.c. board and lay-out of the amplifier. Dimensions: l = 224 mm w = 223 mm h = 113 mm. Weight: 7.5 kg. 6 MEASURED RESULTS Table 3 Frequency range 170 to 230 MHz Output power (peak sync) 30 W 40 W 50 W I.M. distortion ; note 1 Cross modulation 3% 6/7.5% 10/15.5%; note 2 Output power for 1 gain 100 W compression Gain at 40 W output level 8.5 ±0.1 Input and output V.S.W.R. 1.2 Ambient temp. 25 C Heatsink temp. 65 C Transistor stud temp. 85 C Notes 1. Vision carrier 8, sound carrier 7, side signal 16, zero corresponds to peak sync level; f sound =f vision MHz, f sideband =f vision 1 MHz to f vision + 6 MHz. 2. Vision carrier 0, sound carrier 7 : voltage variation of sound carrier (%) when the vision carrier is switched from 20 to 0 ; f sound =f vision MHz Mar 23 4

5 In Fig.4 the typical results of crossmodulation and intermodulation measurements on a demonstration amplifier have been given. Figures 5 and 6 show the S-parameters of the complete amplifier. The measuring set-up is depicted in Fig.7. 7 CONCLUSION Two transistors, coupled by means of 3 90 hybrids, can deliver an output power of typ. 40 W with an associated gain of 8.5. Required D.C. input power approx. 165 W. Using a high power sweep with adjustable transistor output power levelling provides a suitable method to adjust a linear wideband power amplifier. 8 REFERENCES Ref. 1: G.L. Matthaei Tables of Chebyshev Impedance Transforming Networks of Low-Pass Filter Form. Proceedings of the IEEE August 1964, pp Ref. 2: A.H. Hilbers and M.J. Köppen A wide-band linear power amplifier ( MHz) with two transistors BLW34. C.A.B. report ECO Mar 23 5

6 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.this text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.this text is here inthis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be Mar 23 6 input C2 R1 C1 R2 in iso C3 0 H1 90 C5 L1 C6 C9 C10 L4 V b R3 C19 C14 handbook, full pagewidth C13 C27 L3 L7 L10 L13 L15 L19 L17,,,,,,, L9 V c C25 C26 C21 C31 C15 C22 C32 L21 C35 90 iso H2 0 in R5 R6 C38 C37 output Philips Semiconductors C4 C7 L2 C11 C16 C23 C33 L8 L11 L14 L16 L20 L5 L18 L22,,,,,,,,,, C36 C8 C12 C17 C24 C34 L12 L6 C28 C18 C29 R4 C20 C30 V b V c MGP988 Fig.1 Band III Class A linear power amplifier ( MHz).

7 Table 4 Parts list: Band III class A linear power amplifier ( MHz) C1 = C pf chip capacitor C2 = C3 = C4 = C pf chip capacitor C5 = C8 = C32 = C to 10 pf film dielectric trimmer (cat. no ) C6 = C7 = C35 = C pf chip capacitor C9 = C10 = C11 = C12 18 pf chip capacitor C13 = C18 = C27 = C pf chip capacitor C14 = C15 = C16 = C pf chip capacitor C19 = C20 = C26 = C nf metallized film capacitor (cat. no ) C21 = C23 68 pf chip capacitor C22 = C24 56 pf chip capacitor C25 = C30 10 µf (40 V) electrolytic capacitor (cat. no ) C31 = C34 22 pf chip capacitor (chip capacitors: ATC type 100B C MSX 500) R1 = R2 = R5 = R6 100 Ω power metal film resistor, PR52 type (cat. no ) R3 = R4 10 Ω carbon resistor, CR68 type (cat. no ) H1 = H coupler model no , range MHz, Anaren Microwave Inc. L1 = L2 25 nh 2 turns enamelled Cu wire (1 mm); int. diam. 5 mm; length 5 mm; leads 2 3mm L3 = L6 90 nh 5 turns closely wound enamelled Cu wire (1 mm); int. diam. 4.5 mm; leads 2 9mm L4 = L5 60 Ω stripline; w = 2 mm; l = 30 mm L7 = L8 30 Ω stripline; w = 6 mm; l = 11 mm L9 = L12 20 nh Cu strip (1 mm); l = 17 mm; h = 5 mm; w = 4 mm L10 = L11 30 Ω stripline; w = 6 mm; l = 8 mm L13 = L14 30 Ω stripline; w = 6 mm; l = 14 mm L15 = L16 30 Ω stripline; w = 6 mm; l = 4 mm L17 = L18 22 nh 2 turns closely wound Cu wire (1.5 mm); int. diam. 4.5 mm; leads 2 3mm L19 = L20 30 Ω stripline; w = 6 mm; l = 6 mm L21 = L22 stripline; w = 3 mm; l = 15 mm The striplines are printed on double Cu-clad printed circuit board with epoxy fibre-glass dielectric (ε r = 4.5); thickness 1/16 inch Mar 23 7

8 handbook, full pagewidth V s (+ 27 V) R5 D2 R1 R6 R7 C4 e b c TR1 BD136 C1 C2 D1 R2 R3 R8 C3 R9 V c V b V ce = 25 V,,,,, R4 R10 MGP997 handbook, full pagewidth 55 R5 C1 C2 R6 72 V s D1 D2 R1 R3 R7 C4 C3 R2 R8 R9 V c e c b V b R4 R10 MGP998 Fig.2 Class A bias circuit for a single transistor Mar 23 8

9 Table 5 Parts list: Class A bias circuit for a single transistor R1 1 carbon resistor CR25 type R2 100 Ω preset potentiometer CTP10 type R3 10 Ω carbon resistor CR25 type R Ω carbon resistor CR25 type R5 = R6 = R7 1.8 Ω rectangular wirewound resistor EH707 type R8 = R9 180 Ω carbon resistor CR25 type R10 33 Ω carbon resistor CR25 type C1 = C3 100 nf metallized film capacitor C2 100 pf ceramic capacitor C4 10 µf 40 V electrolytic capacitor D1 BZY 88 (3V3) D2 BY 206 T1 BD Mar 23 9

10 handbook, full pagewidth MGP989 Fig.3 P.C. Board and 2 amplifier lay-out Mar 23 10

11 16 handbook, full pagewidth MGP991 crossmod. (%) V (%) P o sync = 50 W W 4 30 W f (MHz) handbook, full pagewidth intermod. product () 46 intermod. product = P o sync 7 MGP P o sync = W W W W f (MHz) 224 Vision carrier level: 20 /0. Sound carrier level: 7. Sync level: 0. Fig.4 Crossmodulation and intermodulation products of the 2 wideband Band III power amplifier Mar 23 11

12 9 handbook, halfpage MGP993 () S (MHz) a. Forward transducer gain. handbook, () halfpage MGP994 V.S.W.R S (MHz) b. Input voltage standing wave ratio. Fig.5 2 wideband Band III power amplifier Mar 23 12

13 handbook, () halfpage MGP S (MHz) a. Reverse transducer gain. handbook, () halfpage MGP996 V.S.W.R S (MHz) b. Output voltage standing wave ratio. Fig.6 2 wideband Band III power amplifier Mar 23 13

14 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.this text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.this text is here inthis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be Mar POWER DIVIDER HP778D 6 DIRECT. COUPLER VAR. ATT. COAX SWITCH BAND III WIDEBAND POWER AMPLIFIER D.U.T. 2 COAX SWITCH handbook, full pagewidth 10 ATT. (100W) POWER DIVIDER HP778D CIRCULATOR RANGES: 170 to 200 MHz 190 to 230 MHz COAX SWITCH DIRECT. COUPLER ALC ATT. 6 AMPLIFIER 8554L SPECTRUM ANALYZER 20 ATT HYBRID VAR. ATT. 10 CD 50-4 HP435A WATT METER 20 ATT. 10 S.M.L.U. R.F. GEN. ATT. Philips Semiconductors SWOB III S.M.L.U. SWEEP SWEEP PM5171 ALC S.M.L.U. R.F. GEN. COAX DETECTOR 20 D.C. AMPLIFIER AMPLIFIER POWER SWEEP TEST SET-UP Fig.7 Test set up 2 Band III power amplifier. AMPLIFIER AMPLIFIER VAR. ATT. 10 VAR. ATT. 10 S.M.L.U. R.F. GEN. S.M.L.U. R.F. GEN. 170 to 230 MHz 3-TONE TEST SET-UP MGP990

15 a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel , Fax Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel , Fax Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, MINSK, Tel , Fax Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel , Fax Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel , Fax Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel , Fax Finland: Sinikalliontie 3, FIN ESPOO, Tel , Fax France: 51 Rue Carnot, BP317, SURESNES Cedex, Tel , Fax Germany: Hammerbrookstraße 69, D HAMBURG, Tel , Fax Greece: No. 15, 25th March Street, GR TAVROS/ATHENS, Tel /239, Fax Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI , Tel , Fax Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel , Fax Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel , Fax Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, MILANO, Tel , Fax Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel , Fax Korea: Philips House, Itaewon-dong, Yongsan-ku, SEOUL, Tel , Fax Malaysia: No. 76 Jalan Universiti, PETALING JAYA, SELANGOR, Tel , Fax Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel , Fax New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel , Fax Norway: Box 1, Manglerud 0612, OSLO, Tel , Fax Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel , Fax Poland: Ul. Lukiska 10, PL WARSZAWA, Tel , Fax Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, MOSCOW, Tel , Fax Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel , Fax Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel , Fax South America: Al. Vicente Pinzon, 173, 6th floor, SÃO PAULO, SP, Brazil, Tel , Fax Spain: Balmes 22, BARCELONA, Tel , Fax Sweden: Kottbygatan 7, Akalla, S STOCKHOLM, Tel , Fax Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel , Fax Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel , Fax Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel , Fax Turkey: Talatpasa Cad. No. 5, GÜLTEPE/ISTANBUL, Tel , Fax Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, KIEV, Tel , Fax United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel , Fax United States: 811 East Arques Avenue, SUNNYVALE, CA , Tel Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, BEOGRAD, Tel , Fax For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax Internet: Philips Electronics N.V SCA57 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands Date of release: 1998 Mar 23

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