JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-5-L Plastic-Encapsulate MOSFETS CJU N N-Channel Power MOSFET V (BR)DSS R DS(o n) TYP I D TO-5-L V 7mΩ@V 5A DESCRIPTION The CJU5N uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. GATE. DRAIN. SOURCE FEATURE Excellent package for good heat dissipation Ultra low gate charge Low reverse transfer capacitance Fast switching capability Avalanche energy specified MARKING APPLICATION Power switching application EQUIVALENT CIRCUIT U5N XXXX U5N = Device code. Solid dot = Green molding compound device, if none, the normal device. XXXX = Code. MAXIMUM RATINGS ( T a =5 unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage V DS V Gate-Source Voltage ± V Continuous Drain Current I D 5 A Drain Current I DM 6 A Single Avalanche Energy E AS 9 mj Power Dissipation P D 5 W Thermal Resistance from Junction to Ambient R θja /W Thermal Resistance from Junction to Case R θjc.78 /W Operating Junction and Storage Temperature Range,T stg -55~+5 6 Rev. -.
MOSFET ELECTRICAL CHARACTERISTICS T a=5 unless otherwise specified Off characteristics Parameter Symbol Test Condition Min Typ Max Unit Drain-source breakdown voltage V(BR) DSS VGS = V, ID =5µA V Zero gate voltage drain current I DSS VDS =8V, VGS =V =5 =5. µa Gate-body leakage current I GSS VDS =V, VGS =±V ± na On characteristics Gate-threshold voltage VGS(th) VDS =, ID =5µA..5. V Static drain-source on-sate resistance Dynamic characteristics 5 RDS(on) VGS =V, ID =8A 7 mω Input capacitance C iss 77 Output capacitance C oss VDS =5V,VGS =V, 6 f = KHz Reverse transfer capacitance C rss 5 9 9 pf Gate resistance Rg f =MHz.5 Ω Switching characteristics 5 Total gate charge Q g 8 =V, V DS=5V, Gate-source charge Q gs I D=A.8 Gate-drain charge 7. Q gd Turn-on delay time td(on) 5 Turn-on rise time tr V DD=5V,R L=5Ω, Turn-off delay time td(off) =V,R G=.Ω Turn-off fall time tf 6 Drain-Source Diode Characteristics 6 5.6.8 nc ns Drain-source diode forward voltage V SD VGS =V, I S=8A. V Continuous drain-source diode forward current I S 5 A drain-source diode forward current I SM 6 A Notes:.T C =5 Limited only by maximum temperature allowed..p W μs, Duty cycle %..EAS condition: V DD =5V, =V, L=.5mH, Rg=5Ω Starting = 5..Pulse Test : Pulse Width µs, duty cycle %. 5.Guaranteed by design, not subject to production. 6.The value of RθJA is measured with the device mounted on in FR- board with oz. Copper, in a still air environment with T a =5. Rev. -.
Typical Characteristics Output Characteristics =5 5 Transfer Characteristics V DS =6V =V,8V DRAIN CURRENT I D 5 =6V DRAIN CURRENT I D =5 5 =.5V =V 5 DRAIN TO SOURCE VOLTAGE V DS 5 6 GATE TO SOURCE VOLTAGE R DS(ON) I D R DS(ON) =5 6 ID=8A ON-RESISTANCE R DS(ON) (m ) 8 6 = V ON-RESISTANCE R DS(ON) (m ) 8 =5 =5 6 8 DRAIN CURRENT I D 6 8 GATE TO SOURCE VOLTAGE I S V SD Threshold Voltage 5 SOURCE CURRENT I S =5 =5 THRESHOLD VOLTAGE V TH.. SOURCE TO DRAIN VOLTAGE V SD 5 5 75 5 JUNCTION TEMPERATURE ( ) Rev. -.
Typical Characteristics Capacitances Gate Charge CAPACITANCE C (pf) f=khz Ciss Coss Crss GATE TO SOURCE VOLTAGE 8 6 V DS =5V I D =A. DRAIN TO SOURCEVOLTAGE V DS 5 5 5 GATE CHARGE (nc) Rev. -.
TO-5-L Package Outline Dimensions D D c A h V L E L A D L L L φ e b θ Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A...87.9 A..7..5 b.65.77.5. c.6.58.8. D 6.5 6.7.56.6 D 5. 5.6..5 D.8 REF..9 REF. E 6. 6..6. e.86.86.86.9 L 9.7..8.6 L.9 REF.. REF. L..7.55.67 L.6 REF..6 REF. L.6...9 Φ....5 θ 8 8 h.... V 5.5 REF..7 REF. TO-5-L Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. 5 Rev. -.
TO-5-L Tape and Reel 6 Rev. -.