PrimePACK 2模块采用第二代高速IGBT和碳化硅二极管针对高频应用带有温度检测NTC PrimePACK 2modulewithfastIGBT2andSiCDiodeforhighfrequencyswitchingandNTC / VCES = 2V IC nom = A / ICRM = 2A 典型应用 高频开关应用 医疗应用 TypicalApplications HighFrequencySwitchingApplication MedicalApplications 电气特性 低开关损耗 VCEsat带正温度系数 ElectricalFeatures LowSwitchingLosses VCEsatwithpositiveTemperatureCoefficient 机械特性 4kV交流分钟绝缘 封装的CTI> 高爬电距离和电气间隙 低热阻衬底 MechanicalFeatures 4kVACminInsulation PackagewithCTI> HighCreepageandClearanceDistances SubstrateforLowThermalResistance ModuleLabelCode BarcodeCode28 DMX-Code ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) -5 6-2-9 2-2 22-23
IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极 发射极电压 Collector-emittervoltage VCES 2 V 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 55 C, Tvj max = 5 C IC nom A 集电极重复峰值电流 Repetitivepeakcollectorcurrent tp = ms ICRM 2 A 总功率损耗 Totalpowerdissipation TC = 25 C, Tvj max = 5 C Ptot 3,7 kw 栅极 发射极峰值电压 Gate-emitterpeakvoltage VGES +/-2 V 特征值/CharacteristicValues min. 集电极 发射极饱和电压 Collector-emittersaturationvoltage IC = A, VGE = 5 V IC = A, VGE = 5 V 栅极阈值电压 Gatethresholdvoltage IC = 24, ma, VCE = VGE, 栅极电荷 Gatecharge VCE sat typ. max. 3,2 3,8 3,75 V V VGEth 4,5 5,5 6,5 V VGE = -5 V... +5 V, VCE = 25V QG 6,3 µc 内部栅极电阻 Internalgateresistor RGint,3 Ω 输入电容 Inputcapacitance f = MHz,, VCE = 25 V, VGE = V Cies 39, nf 反向传输电容 Reversetransfercapacitance f = MHz,, VCE = 25 V, VGE = V Cres 2,6 nf 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 2 V, VGE = V, ICES 5, ma 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = V, VGE = 2 V, IGES na 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = A, VCE = V VGE = ±5 V RGon =,5 Ω td on,2,2 上升时间(电感负载) Risetime,inductiveload IC = A, VCE = V VGE = ±5 V RGon =,5 Ω tr,6,7 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = A, VCE = V VGE = ±5 V RGoff =,5 Ω td off,53,55 下降时间(电感负载) Falltime,inductiveload IC = A, VCE = V VGE = ±5 V RGoff =,5 Ω tf,7,8 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = A, VCE = V, LS = 42 nh VGE = ±5 V, di/dt = 68 A/ RGon =,5 Ω Eon, 2, 关断损耗能量(每脉冲 Turn-offenergylossperpulse IC = A, VCE = V, LS = 42 nh VGE = ±5 V, du/dt = 5 V/ RGoff =,5 Ω Eoff 35, 4, 短路数据 SCdata VGE 5 V, VCC = 9 V VCEmax = VCES -LsCE di/dt ISC 结 外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 外壳 散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λpaste=w/(m K)/λgrease=W/(m K) RthCH 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -4 2 tp, 39 A 34, K/kW 3, K/kW 25 C
二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tp = ms I2t-值 I²t-value VR = V, tp = ms, VRRM 2 V IF 36 A IFRM 72 A I²t,5 ka²s 特征值/CharacteristicValues min. typ. max.,6 2,2 2,5 正向电压 Forwardvoltage IF = 36 A, VGE = V IF = 36 A, VGE = V VF 反向恢复峰值电流 Peakreverserecoverycurrent IF = 36 A, - dif/dt = 68 A/ (Tvj=25 C) VR = V VGE = -5 V IRM 9 9 A A 恢复电荷 Recoveredcharge IF = 36 A, - dif/dt = 68 A/ (Tvj=25 C) VR = V VGE = -5 V Qr,, µc µc 反向恢复损耗 每脉冲 Reverserecoveryenergy IF = 36 A, - dif/dt = 68 A/ (Tvj=25 C) VR = V VGE = -5 V Erec,, 结 外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 外壳 散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λpaste=w/(m K)/λgrease=W/(m K) RthCH 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -4 25 min. typ. max. R25 5, kω R/R -5 5 % P25 2, mw V V 8, K/kW 3, K/kW C 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues 额定电阻值 Ratedresistance TC = 25 C R偏差 DeviationofR TC = C, R = 493 Ω 耗散功率 Powerdissipation TC = 25 C B-值 B-value R2 = R25 exp [B25/5(/T2 - /(298,5 K))] B25/5 3375 K B-值 B-value R2 = R25 exp [B25/8(/T2 - /(298,5 K))] B25/8 34 K B-值 B-value R2 = R25 exp [B25/(/T2 - /(298,5 K))] B25/ 3433 K 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. 3
模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 5 Hz, t = min. 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 基本绝缘(class,IEC64) basicinsulation(class,iec64) 爬电距离 Creepagedistance VISOL 4, kv Cu Al2O3 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 33, 33, mm 电气间隙 Clearance 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 9, 9, mm 相对电痕指数 Comperativetrackingindex CTI > 外壳 散热器热阻 Thermalresistance,casetoheatsink 每个模块/permodule λpaste=w/(m K)/λgrease=W/(m K) 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TC=25 C,每个开关/perswitch 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque min. typ. RthCH 4,5 LsCE 8 nh RCC'+EE',3 mω Tstg -4 25 C 螺丝M5根据相应的应用手册进行安装 ScrewM5-Mountingaccordingtovalidapplicationnote M 3, - 6, Nm 螺丝M4根据相应的应用手册进行安装 ScrewM4-Mountingaccordingtovalidapplicationnote 螺丝M8根据相应的应用手册进行安装 ScrewM8-Mountingaccordingtovalidapplicationnote,8-2, Nm M 8, - Nm 重量 Weight G 825 g 4 max. K/kW
输出特性IGBT,逆变器 典型) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=5V 输出特性IGBT,逆变器 典型) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=25 C 2 2 96 96 84 84 72 72 48 48 36 36 24 24 2 2,,5,,5 VGE = 8V VGE = 9V VGE = V VGE = 2V VGE = 5V VGE = 2V 8 IC [A] IC [A] 8 2, 2,5 3, VCE [V] 3,5 4, 4,5 5, 传输特性IGBT,逆变器(典型) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=2V,,5,,5 2, 2,5 3, VCE [V] 3,5 4, 4,5 5, 开关损耗IGBT,逆变器 典型) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±5V,RGon=.5Ω,RGoff=.5Ω,VCE=V 2 4 8 Eon, Eoff, 2 96 84 8 E [] IC [A] 72 6 48 36 4 24 2 2 5 6 7 8 9 VGE [V] 2 5 2 IC [A] 8 2
开关损耗IGBT,逆变器 典型) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±5V,IC=A,VCE=V 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) 2 Eon, Eoff, ZthJC : IGBT ZthJC [K/kW] E [] 8 6 4 2 i: 2 3 4 ri[k/kw]: 8,67796,52543 23,585 2,7662 τi[s]:,4,2,5,,,5,,5 2, 2,5 3, RG [Ω] 3,5 4, 4,5,, 5, 反偏安全工作区IGBT,逆变器 RBSOA reversebiassafeoperatingareaigbt,inverter(rbsoa) IC=f(VCE) VGE=±5V,RGoff=.5Ω,Tvj=25 C,, t [s] 正向偏压特性二极管,逆变器 典型) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) IC, Modul IC, Chip 56 52 2 48 44 36 IF [A] IC [A] 8 32 28 24 2 6 2 2 8 4 2 8 VCE [V] 2 6,,2,4,6,8,,2,4,6,8 2, 2,2 2,4 VF [V]
开关损耗二极管,逆变器 典型) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=.5Ω,VCE=V 开关损耗二极管,逆变器 典型) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=36A,VCE=V 25 25 Erec, E [] E [] Erec, 5 5 2 IF [A] 8 5 2 瞬态热阻抗二极管,逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) 5,,5,,5 2, 2,5 3, RG [Ω] 3,5 4, 4,5 5, 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) ZthJC : Diode Rtyp R[Ω] ZthJC [K/kW] i: 2 3 4 ri[k/kw]: 8,9835,27865 54,23729 6,58474 τi[s]:,4,2,5,,,, t [s] 7 2 4 6 8 TC [ C] 2 4 6
接线图/circuit_diagram_headline 封装尺寸/packageoutlines 8
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