IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedalues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage CES 2 TC = C, Tvj max = 75 C TC = 25 C, Tvj max = 75 C IC nom tp = ms ICRM TC = 25 C, Tvj max = 75 C Ptot W GES +/-2 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink IC CE sat 28,85 2, 2,25 2,25 IC =,48 m, CE = GE, GEth 5,2 5,8,4 GE = -... + QG,2 RGint, Ω f = MHz,, CE = 25, GE = Cies,8 nf f = MHz,, CE = 25, GE = Cres, nf CE = 2, GE =, ICES, m CE =, GE = 2, IGES 4 n IC =, CE = GE = ± RGon = Ω IC =, CE = GE = ± RGon = Ω IC =, CE = GE = ± RGoff = Ω IC =, CE = GE = ± RGoff = Ω IC =, CE =, LS = 5 nh GE = ±, di/dt = 55 / () RGon = Ω IC =, CE =, LS = 5 nh GE = ±, du/dt = 5 / () RGoff = Ω GE, CC = 8 CEmax = CES -LsCE di/dt tp, td on tr td off tf Eon Eoff,55,55,55,5,5,5,28,45,,2,,75,5,8,2,5 每个 IGBT/perIGBT RthJC,5, K/W 每个 IGBT/perIGBT λpaste=w/(m K)/λgrease=W/(m K) ISC 55 RthCH,5 K/W Tvj op -4 C
二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedalues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value RRM 2 IF tp = ms IFRM R =, tp = ms, R =, tp = ms, 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink IF =, GE = IF =, GE = IF =, GE = IF =, - dif/dt = 55 / (Tvj= C) R = GE = - IF =, - dif/dt = 55 / (Tvj= C) R = GE = - IF =, - dif/dt = 55 / (Tvj= C) R = GE = - I²t F IRM Qr Erec, 4, 2, 2, 2,, 2, 2,,2 2,5 2,4,7,8,8 ²s ²s 2,5 每个二极管 /perdiode RthJC,75, K/W 每个二极管 /perdiode λpaste=w/(m K)/λgrease=W/(m K) RthCH, K/W Tvj op -4 C 二极管, 整流器 /Diode,Rectifier 最大额定值 /MaximumRatedalues 反向重复峰值电压 Repetitivepeakreversevoltage 最大正向均方根电流 ( 每芯片 ) MaximumRMSforwardcurrentperchip 最大整流器输出均方根电流 MaximumRMScurrentatrectifieroutput 正向浪涌电流 Surgeforwardcurrent I2t- 值 I²t-value RRM TC = 8 C IFRMSM TC = 8 C IRMSM tp = ms, tp = ms, tp = ms, tp = ms, 正向电压 Forwardvoltage 反向电流 Reversecurrent 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink IFSM I²t 5 45, IF = F,85 ²s ²s, R = IR, m 每个二极管 /perdiode RthJC,2,5 K/W 每个二极管 /perdiode λpaste=w/(m K)/λgrease=W/(m K) RthCH, K/W Tvj op -4 C 2
IGBT, 制动 - 斩波器 /IGBT,Brake-Chopper 最大额定值 /MaximumRatedalues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage CES 2 TC = C, Tvj max = 75 C TC = 25 C, Tvj max = 75 C IC nom tp = ms ICRM TC = 25 C, Tvj max = 75 C Ptot W GES +/-2 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink IC CE sat 28,85 2, 2,25 2,25 IC =,48 m, CE = GE, GEth 5,2 5,8,4 GE = -... + QG,2 RGint, Ω f = MHz,, CE = 25, GE = Cies,8 nf f = MHz,, CE = 25, GE = Cres, nf CE = 2, GE =, ICES, m CE =, GE = 2, IGES 4 n IC =, CE = GE = ± RGon = 4 Ω IC =, CE = GE = ± RGon = 4 Ω IC =, CE = GE = ± RGoff = 4 Ω IC =, CE = GE = ± RGoff = 4 Ω IC =, CE =, LS = 5 nh GE = ± RGon = 4 Ω IC =, CE =, LS = 5 nh GE = ± RGoff = 4 Ω GE, CC = 8 CEmax = CES -LsCE di/dt tp, td on tr td off tf Eon Eoff,,2,28,285,7,2,225,5,8 2,,85,2,5 每个 IGBT/perIGBT RthJC,5, K/W 每个 IGBT/perIGBT λpaste=w/(m K)/λgrease=W/(m K) ISC 55 RthCH,5 K/W Tvj op -4 C
二极管, 制动 - 斩波器 /Diode,Brake-Chopper 最大额定值 /MaximumRatedalues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value RRM 2 IF tp = ms IFRM 2 R =, tp = ms, I²t, ²s 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink IF =, GE = IF =, GE = IF =, GE = IF =, - dif/dt = 5 / (Tvj= C) R = IRM IF =, - dif/dt = 5 / (Tvj= C) R = Qr IF =, - dif/dt = 5 / (Tvj= C) R = Erec F,75,75,75 2,, 8,,,7,,,52,5 2,25 每个二极管 /perdiode RthJC,75, K/W 每个二极管 /perdiode λpaste=w/(m K)/λgrease=W/(m K) RthCH, K/W Tvj op -4 C 负温度系数热敏电阻 /NTC-Thermistor 额定电阻值 Ratedresistance R 偏差 DeviationofR 耗散功率 Powerdissipation B- 值 B-value B- 值 B-value B- 值 B-value 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. TC = 25 C R25 5, kω TC = C, R = 4 Ω R/R -5 5 % TC = 25 C P25 2, mw R2 = R25 exp [B25/5(/T2 - /(28, K))] B25/5 75 K R2 = R25 exp [B25/8(/T2 - /(28, K))] B25/8 4 K R2 = R25 exp [B25/(/T2 - /(28, K))] B25/ 4 K 4
模块 /Module 绝缘测试电压 Isolationtestvoltage 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 最大结温 Maximumjunctiontemperature 储存温度 Storagetemperature npresskraft für mech. Bef. pro Feder mountig force per clamp 重量 Weight RMS, f = 5 Hz, t = min ISOL 2,5 k 基本绝缘 (class,iec4) basicinsulation(class,iec4) 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal I2 CTI > 2,5,, 5, min. typ. max. mm mm LsCE nh TC=25 C, 每个开关 /perswitch 逆变器, 制动 - 斩波器 /inverter,brake-chopper 整流器 /rectifier 逆变器, 制动 - 斩波器 /inverter,brake-chopper 整流器 /rectifier RCC'+EE' R'+CC' 8,, Tvj max Tvj op -4-4 75 Tstg -4 25 C F 2-5 N G g mω C C C C Der Strom im Dauerbetrieb ist auf 25 effektiv pro nschlusspin begrenzt. The current under continuous operation is limited to 25 rms per connector pin. 5
输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(CE) GE= 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(CE) Tvj= C GE = GE = 7 GE = GE = GE = GE = 2 2 8 8 IC [] IC [] 2 2,,5,,5 2, 2,5,,5 CE [],,5,,5 2, 2,5,,5 4, 4,5 5, CE [] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(GE) CE=2 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) GE=±,RGon=Ω,RGoff=Ω,CE= 5 Eon, Eon, Eoff, Eoff, 2 4 8 IC [] E [] 2 2 5 7 8 2 GE [] 5 2 25 IC []
开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) GE=±,IC=,CE= 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJH=f(t), 8, Eon, Eon, Eoff, Eoff, ZthJH : IGBT 7,, E [] 5, 4, ZthJH [K/W], 2,,, 4 8 2 2 28 2 4 RG [Ω] i: ri[k/w]: τi[s]:,4,5 2,45,5,85,5 4,7,2,,,, t [s] 反偏安全工作区 IGBT, 逆变器 (RBSO) reversebiassafeoperatingareaigbt,inverter(rbso) IC=f(CE) GE=±,RGoff=Ω,Tvj= C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(F) IC, Modul IC, Chip 2 IC [] 2 8 2 IF [] 8 2 2 4 8 2 4 CE [],,5,,5 2, 2,5,,5 4, F [] 7
开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=Ω,CE= 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=,CE=,4,2 Erec, Erec,,,,8 Erec, Erec,,,7,8, E [], E [],5,4,4,,2,2,, 5 2 25 IF [], 4 8 2 2 28 2 4 RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJH=f(t) 正向偏压特性 二极管, 整流器 ( 典型 ) forwardcharacteristicofdiode,rectifier(typical) IF=f(F) ZthJH : Diode 25 2 ZthJH [K/W] IF [] i: ri[k/w]: τi[s]:,44,5 2,4,5,74,5 4,88,2,,,, t [s] 5,,2,4,,8,,2,4 F [] 8
输出特性 IGBT, 制动 - 斩波器 ( 典型 ) outputcharacteristicigbt,brake-chopper(typical) IC=f(CE) GE= 正向偏压特性 二极管, 制动 - 斩波器 ( 典型 ) forwardcharacteristicofdiode,brake-chopper(typical) IF=f(F) 2 8 2 4 8 2 IC [] IF [] 2 8 4 2,,5,,5 2, 2,5,,5 CE [],,5,,5 2, 2,5, F [] 负温度系数热敏电阻 温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) Rtyp R[Ω] 2 4 8 2 4 TC [ C]
接线图 /circuit_diagram_headline J 封装尺寸 /packageoutlines Infineon
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