FGHT65SPD 65 V A 场截止沟道 IGBT 特性 最大结温 :T J =75 C 正温度系数, 易于并联运行 高电流能力 低饱和电压 :V CE(sat) =.85 V ( 典型值 ) @ I C = A 高输入阻抗 快速开关 紧密的参数分布 符合 RoHS 标准 短路耐用性 > 5 μs @ 25 C E C G 概述 飞兆半导体的场截止第 3 代 IGBT 新系列采用新型场截止 IGBT 技术, 为光伏逆变器 UPS 焊机 电信 ESS 和 PFC 等低导通和开关损耗至关重要的应用提供最佳性能 应用 光伏逆变器 UPS 焊机 PFC 电信 ESS C FGHT65SPD 65 V A 场截止沟道 IGBT G 绝对最大额定值 集电极 (FLANGE) E 符号 说明 FGHT65SPD-F55 单位 V CES 集电极 - 发射极之间电压 65 V V GES 栅极 - 发射极间电压 2 V 瞬态栅极 - 发射极间电压 3 V I C 集电极电流 @ T C = 25 C 8 A 集电极电流 @ T C = C A I CM 集电极脉冲电流 2 A I F 二极管正向电流 @ T C = 25 C A 二极管正向电流 @ T C = C 2 A I FM 二极管最大正向脉冲电流 2 A P D 最大功耗 @ T C = 25 C 267 W 最大功耗 @ T C = C 3 W SCWT 短路耐受时间 @ T C = 25 C 5 s T J 工作结温 -55 至 +75 C T stg 存储温度范围 -55 至 +75 C T L 用于焊接的最大引脚温度, 距离外壳 /8", 持续 5 秒 3 C 注意 : : 重复额定值 : 脉宽受最大结温限制 热性能 符号参数典型值最大值单位 R JC (IGBT) 结点 - 壳体的热阻 -.56 C/W R JC ( 二极管 ) 结点 - 壳体的热阻 -.7 C/W R JA 结至环境热阻 - C/W 23 飞兆半导体公司 December-27, 修订版 3 Publication Order Number: FGHT65SPDCN/D
封装标识与定购信息 器件标识器件封装卷尺寸带宽每卷管数量 FGHT65SPD FGHT65SPD-F55 TO-27 G3 - - 3ea IGBT 的电气特性 T C = 25 C 除非另有说明 符号参数测试条件最小值典型值最大值单位 关断特性 BV CES 集电极 - 发射极击穿电压 V GE = V, I C = ma 65 - - V DBV CES 击穿温度系数电压 DT J V GE = V, I C = ma -.6 - V/ C I CES 集电极切断电流 V CE = V CES, V GE = V - - 25 μa I GES G-E 漏电流 V GE = V GES, V CE = V - - ± na 导通特性 V GE(th) G-E 阈值电压 I C = ma, V CE = V GE 5.5 7.5 V I C = A, V GE = 5 V -.85 2. V V CE(sat) 集电极 - 发射极间饱和电压 I C = A, V GE = 5 V, T C = 75 C - 2.5 - V FGHT65SPD 65 V A 场截止沟道 IGBT 动态特性 C ies 输入电容 - 37 - pf C oes 输出电容 V CE = 3 V, V GE = V, f = MHz - 9 - pf C res 反向传输电容 - 6 - pf 开关特性 T d(on) 导通延迟时间 - 6 - ns T r 上升时间 - 2 - ns T d(off) 关断延迟时间 V CC = V, I C = A, - 37 - ns T f 下降时间 R G = 6, V GE = 5 V, - - ns E on 导通开关损耗 感性负载, T C = 25 C -.6 - mj E off 关断开关损耗 -.28 - mj E ts 总开关损耗 -. - mj T d(on) 导通延迟时间 - - ns T r 上升时间 - 9 - ns T d(off) 关断延迟时间 V CC = V, I C = A, - 38 - ns T f 下降时间 R G = 6, V GE = 5 V, - 8 - ns E on 导通开关损耗 感性负载, T C =75 C -.5 - mj E off 关断开关损耗 -.52 - mj E ts 总开关损耗 - 2.6 - mj T SC 短路耐受时间 V CC = V, V GE = 5 V, R G = 5 - - μs 2
IGBT 电气特性 ( 接上页 ) 符号 参数 测试条件 最小值 典型值 最大值 单位 Q g 总栅极电荷 - 35 - nc Q ge 栅极 - 发射极间电荷 V CE = V, I C = A, V GE = 5 V - - nc Q gc 栅极 - 发射极间电荷 - 2 - nc 二极管电气特性 T C = 25 C 除非另有说明 符号 参数 测试条件 最小值 典型值 最大值 单位 V FM 二极管正向电压 I F = 2 A T C = 25 C - 2.2 2.7 V T C = 75 C -.9 - E rec 反向恢复电能 T C = 75 C - 76 - μj T rr 二极管反向恢复时间 I F = 2 A, di F /dt=2 A/μs T C = 25 C - 3 - T C = 75 C - 96 - ns Q rr 二极管反向恢复电荷 T C = 25 C - 52 - nc T C = 75 C - 638 - FGHT65SPD 65 V A 场截止沟道 IGBT 3
典型性能特征 图. 典型输出特性 Collector Current, IC [A] 2 9 6 3 2V 5V 2V V V GE = 8V 2 3 5 6 图 2. 典型输出特性 2 3 5 6 图 3. 典型饱和电压特性图. 饱和电压与壳温的关系 ( 可变电流强度下 ) Collector Current, IC [A] 2 9 6 3 V GE = 5V 2 3 5 6 Collector Current, IC [A] 2 Collector-Emitter Voltage, VCE [V] 9 6 3 5 3 2 V GE = 5V 2V 8A A 5V 2V V V GE = 8V I C = 2A - -5 5 5 2 Case Temperature, T C [ o C] FGHT65SPD 65 V A 场截止沟道 IGBT 图 5. 饱和电压与 V GE 的关系 图 6. 饱和电压与 V GE 的关系 Collector-Emitter Voltage, VCE [V] 2 6 2 8 I C = 2A 8A A Collector-Emitter Voltage, VCE [V] 2 6 2 8 I C = 2A A 8A 8 2 6 2 Gate-Emitter Voltage, V GE [V] 8 2 6 2 Gate-Emitter Voltage, V GE [V]
典型性能特征 图 7. 电容特性 Capacitance [pf] 图 9. 导通特性与栅极电阻的关系 Switching Time [ns] 2 V GE = V, f = MHz t r t d(on) C ies C oes C res V CC = V, V GE = 5V I C = A 2 3 5 Gate Resistance, R G [ ] 3 图 8. 栅极电荷特性 Gate-Emitter Voltage, VGE [V] 5 2 9 6 3 V CC = 2V 2 3 Gate Charge, Q g [nc] 图. 关断特性与栅极电阻的关系 Switching Time [ns] V CC = V, V GE = 5V I C = A t d(off) V 3V 2 3 5 Gate Resistance, R G [ ] t f FGHT65SPD 65 V A 场截止沟道 IGBT 图. 开关损耗与栅极电阻的关系 Switching Loss [mj] 2 V CC = V, V GE = 5V I C = A E on E off 图 2. 导通特性与集电极电流的关系 Switching Time [ns] 2 V GE = 5V, R G = 6 T C = 75 o C t r t d(on) 2 3 5 Gate Resistance, R G [ ] 5 2 6 8 Collector Current, I C [A] 5
典型性能特征 图 3. 关断特性与集电极电流的关系 Switching Time [ns] V GE = 5V, R G = 6 2 6 8 图 5. 负载电流与频率的关系 Collector Current, [A] 2 8 6 2 Square Wave T C = o C t f t d(off) Collector Current, I C [A] V CC = V load current: peak of square wave T C = o C Power Dissipation = 3W k k k M Switching Frequency, f[hz] 图. 开关损耗与集电极电流的关系 Switching Loss [mj] 2 2 6 8 图 6. SOA 特性 Collector Current, Ic [A] 3 V GE = 5V, R G = 6 *Notes:. Collector Current, I C [A] E on E off s ms ms DC s 2. T J = 75 o C 3. Single Pulse. FGHT65SPD 65 V A 场截止沟道 IGBT 图 7. 正向特性 图 8. 反向恢复电流 Forward Current, IF [A] 2 T J = 75 o C T J = 25 o C T J = 75 o C T C = 75 o C 2 3 5 Forward Voltage, V F [V] Reverse Recovery Currnet, Irr [A] 8 6 2 di F /dt = 2A/ s di F /dt = A/ s di F /dt = 2A/ s di F /dt = A/ s 2 3 Forward Current, I F [A] 6
典型性能特征 图 9. 反向恢复时间 Reverse Recovery Time, trr [ns] 3 25 2 5 5 --- di F /dt = A/ s di F /dt = 2A/ s 2 3 Forward Current, I F [A] 图 2. 存储电荷 Stored Recovery Charge, Qrr [nc] 8 6 2 图 2. IGBT 瞬态热阻抗 di F /dt = 2A/ s di F/dt = A/ s 2 3 Forward Current, I F [A] FGHT65SPD 65 V A 场截止沟道 IGBT Thermal Response [Zthjc]...5.2..5.2. single pulse Duty Factor, D = t/t2 Peak T j = Pdm x Zthjc + T C E-3-5 - -3-2 - Rectangular Pulse Duration [sec] P DM t t 2 图 22. 二极管瞬态热阻抗 5 Thermal Response [Zthjc]...5.2..5.2. single pulse Duty Factor, D = t/t2 Peak T j = Pdm x Zthjc + T C E-3-5 - -3-2 - Rectangular Pulse Duration [sec] P DM t t 2 7
机械尺寸 FGHT65SPD 65 V A 场截止沟道 IGBT 图 23. TO-27 3L - TO-27, 模塑封装, 3 引脚, JEDEC AB 长引脚 封装图纸作为一项服务, 提供给考虑飞兆半导体元件的客户 具体参数可能会有变化, 且不会做出相应通知 请注意图纸上的版本和 / 或日期, 并联系飞兆半导体代表核实或获得最新版本 封装规格并不扩大飞兆公司全球范围内的条款与条件, 尤其是其中涉及飞兆公司产品保修的部分 8
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