F3L2R2N2H3_B47 EconoPACK 2 模块 采用第二类中点钳位拓扑 (NPC2) 带有温度检测 NTC EconoPACK 2modulewithactive"NeutralPointClamp2"topologyandNTC VCES = 2V IC nom = 5A / ICRM = 3A 潜在应用 PotentialApplications UPS 系统 UPSsystems 三电平应用 3-level-applications 太阳能应用 Solarapplications 电机传动 Motordrives 电气特性 ElectricalFeatures Tvjop=5 C Tvjop=5 C 低开关损耗 Lowswitchinglosses 高速 IGBTH3 HighspeedIGBTH3 机械特性 MechanicalFeatures 2.5kV 交流 分钟 绝缘 2.5kVACmininsulation 焊接技术 Soldercontacttechnology 符合 RoHS RoHScompliant ModuleLabelCode BarcodeCode28 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit -5 6-2-9 2-2 22-23 Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V3. www.infineon.com 28-6-29
F3L2R2N2H3_B47 IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 集电极电流 Implementedcollectorcurrent 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES 2 V ICN 2 A TC = C, Tvj max = 75 C ICDC 5 A tp = ms ICRM 4 A VGES +/-2 V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IC = 5 A VGE = 5 V VCE sat,8 2, 2,2 2,5 V V V IC = 7,6 ma, VCE = VGE, VGEth 5, 5,8 6,35 V VGE = -5 / 5 V, VCE = 35 V QG,6 µc RGint 3,8 Ω f = khz,, VCE = V, VGE = V Cies,5 nf f = khz,, VCE = V, VGE = V Cres,63 nf VCE = 2 V, VGE = V, ICES, ma VCE = V, VGE = 2 V, IGES na IC = 5 A, VCE = 35 V VGE = -5 / 5 V RGon = 2,4 Ω IC = 5 A, VCE = 35 V VGE = -5 / 5 V RGon = 2,4 Ω IC = 5 A, VCE = 35 V VGE = -5 / 5 V RGoff = 2,4 Ω IC = 5 A, VCE = 35 V VGE = -5 / 5 V RGoff = 2,4 Ω IC = 5 A, VCE = 35 V, Lσ = 35 nh di/dt = 29 A/ () VGE = -5 / 5 V, RGon = 2,4 Ω IC = 5 A, VCE = 35 V, Lσ = 35 nh du/dt = 28 V/ () VGE = -5 / 5 V, RGoff = 2,4 Ω VGE 5 V, VCC = 8 V VCEmax = VCES -LsCE di/dt tp, td on tr td off tf Eon Eoff ISC,9,2,2,44,52,53,3,39,4,4,,2 3, 4,9 5,3 4,55 6,95 7,7 72 A 每个 IGBT/perIGBT RthJC,62 K/W 每个 IGBT/perIGBT λpaste=w/(m K)/λgrease=W/(m K) RthCH, K/W Tvj op -4 5 C Datasheet 2 V3. 28-6-29
F3L2R2N2H3_B47 二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value VRRM 2 V IF A tp = ms IFRM 2 A VR = V, tp = ms, VR = V, tp = ms, 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IF = A, VGE = V IF = A, VGE = V IF = A, VGE = V IF = A, - dif/dt = 26 A/ (Tvj=5 C) VR = 35 V VGE = -5 V IF = A, - dif/dt = 26 A/ (Tvj=5 C) VR = 35 V VGE = -5 V IF = A, - dif/dt = 26 A/ (Tvj=5 C) VR = 35 V VGE = -5 V I²t VF IRM Qr Erec 95 85,75,7,7 2 23 28 7,5 3,6 5,5 2, 3,8 4,35 A²s A²s 2,5 V V V 每个二极管 /perdiode RthJC,49 K/W 每个二极管 /perdiode λpaste=w/(m K)/λgrease=W/(m K) A A A µc µc µc RthCH,46 K/W Tvj op -4 5 C Datasheet 3 V3. 28-6-29
F3L2R2N2H3_B47 IGBT, 三电平 /IGBT,3-Level 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES 65 V TC = 5 C, Tvj max = 75 C ICDC 5 A tp = ms ICRM 3 A VGES +/-2 V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IC = 5 A VGE = 5 V VCE sat,45,6,7,9 V V V IC = 2,4 ma, VCE = VGE, VGEth 5,5 5,8 6,45 V VGE = -5 / 5 V QG,5 µc RGint 2, Ω f = khz,, VCE = V, VGE = V Cies 9,3 nf f = khz,, VCE = V, VGE = V Cres,285 nf VCE = 65 V, VGE = V, ICES, ma VCE = V, VGE = 2 V, IGES na IC = 5 A, VCE = 35 V VGE = -5 / 5 V RGon = 3,3 Ω IC = 5 A, VCE = 35 V VGE = -5 / 5 V RGon = 3,3 Ω IC = 5 A, VCE = 35 V VGE = -5 / 5 V RGoff = 3,3 Ω IC = 5 A, VCE = 35 V VGE = -5 / 5 V RGoff = 3,3 Ω IC = 5 A, VCE = 35 V, Lσ = 35 nh di/dt = 28 A/ () VGE = -5 / 5 V, RGon = 3,3 Ω IC = 5 A, VCE = 35 V, Lσ = 35 nh du/dt = 4 V/ () VGE = -5 / 5 V, RGoff = 3,3 Ω VGE 5 V, VCC = 36 V VCEmax = VCES -LsCE di/dt tp 6, td on tr td off tf Eon Eoff ISC,8,,,5,57,62,29,32,34,7,2,4 7,2 9,45, 4,5 6,4 7, 75 A 每个 IGBT/perIGBT RthJC,349 K/W 每个 IGBT/perIGBT λpaste=w/(m K)/λgrease=W/(m K) RthCH,38 K/W Tvj op -4 5 C Datasheet 4 V3. 28-6-29
F3L2R2N2H3_B47 二极管, 三电平 /Diode,3-Level 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value VRRM 65 V IF 5 A tp = ms IFRM 3 A VR = V, tp = ms, VR = V, tp = ms, 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IF = 5 A, VGE = V IF = 5 A, VGE = V IF = 5 A, VGE = V IF = 5 A, - dif/dt = 29 A/ (Tvj=5 C) VR = 35 V VGE = -5 V IF = 5 A, - dif/dt = 29 A/ (Tvj=5 C) VR = 35 V VGE = -5 V IF = 5 A, - dif/dt = 29 A/ (Tvj=5 C) VR = 35 V VGE = -5 V I²t VF IRM Qr Erec 7 65,65,55,5 69, 89, 95, 4,4 8, 9,5,5,9 2,2 A²s A²s 2,5 V V V 每个二极管 /perdiode RthJC,645 K/W 每个二极管 /perdiode λpaste=w/(m K)/λgrease=W/(m K) A A A µc µc µc RthCH,54 K/W Tvj op -4 5 C 负温度系数热敏电阻 /NTC-Thermistor 特征值 /CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance R 偏差 DeviationofR 耗散功率 Powerdissipation B- 值 B-value B- 值 B-value B- 值 B-value 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. TNTC = C R 5, kω TNTC = C, R = 493 Ω R/R -5 5 % TNTC = C P 2, mw R2 = R exp [B/5(/T2 - /(298,5 K))] B/5 3375 K R2 = R exp [B/8(/T2 - /(298,5 K))] B/8 34 K R2 = R exp [B/(/T2 - /(298,5 K))] B/ 3433 K Datasheet 5 V3. 28-6-29
F3L2R2N2H3_B47 模块 /Module 绝缘测试电压 Isolationtestvoltage 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 重量 Weight RMS, f = 5 Hz, t = min. VISOL 2,5 kv 基本绝缘 (class,iec64) basicinsulation(class,iec64) 端子至散热器 /terminaltoheatsink 端子至端子 /terminaltoterminal 端子至散热器 /terminaltoheatsink 端子至端子 /terminaltoterminal Cu Al2O3, 7,5 CTI > 2 min. typ. max. mm mm LsCE 7 nh TC= C, 每个开关 /perswitch RCC'+EE' 2,5 mω 螺丝 根据相应的应用手册进行安装 Screw-Mountingaccordingtovalidapplicationnote Tstg -4 C M 3, 6, Nm G 8 g Datasheet 6 V3. 28-6-29
F3L2R2N2H3_B47 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=5V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=5 C 3 275 3 275 VGE = 9V VGE = 7V VGE = 5V VGE = 3V VGE = V VGE = 9V 2 2 2 2 75 75 5 5 75 75 5 5,,5,,5 2, 2,5 3, 3,5 4, VCE [V],,5,,5 2, 2,5 3, 3,5 4, 4,5 5, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=2V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±5V,RGon=2.4Ω,RGoff=2.4Ω,VCE=35V 3 275 22 2 8 Eon, Eoff, Eon, Eoff, 2 2 75 5 75 E [] 6 4 2 8 6 5 4 2 5 6 7 8 9 2 VGE [V] 5 5 2 3 Datasheet 7 V3. 28-6-29
F3L2R2N2H3_B47 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±5V,IC=5A,VCE=35V???IGBT, 逆变器 ( 典型 ) switchingtimesigbt,inverter(typical) tdon=f(ic),tr=f(ic),tdoff=f(ic),tf=f(ic) VGE=±5V,RGon=2.4Ω,RGoff=2.4Ω,VCE=35V,Tvj=5 C 22 2 Eon, Eoff, Eon, Eoff, tdon tr tdoff tf 8 6 4 E [] 2 t [] 8 6, 4 2 5 5 2 RG [Ω], 5 5 2 3???IGBT, 逆变器 ( 典型 ) switchingtimesigbt,inverter(typical) tdon=f(rg),tr=f(rg),tdoff=f(rg),tf=f(rg) VGE=±5V,IC=5A,VCE=35V,Tvj=5 C 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) tdon ZthJC : IGBT tr tdoff tf, t [] ZthJC [K/W],, i: ri[k/w]: τi[s]:,56,679 2,347,27 3,957,6 4,6,54, 5 5 2 RG [Ω],,,, t [s] Datasheet 8 V3. 28-6-29
F3L2R2N2H3_B47 反偏安全工作区 IGBT, 逆变器 (RBSOA) reversebiassafeoperatingareaigbt,inverter(rbsoa) IC=f(VCE) VGE=±5V,RGoff=2.4Ω,Tvj=5 C 栅极电荷特性 IGBT, 逆变器 ( 典型 ) gatechargecharacteristicigbt,inverter(typical) VGE=f(QG) IC=5A,Tvj= C 45 4 IC, Modul IC, Chip 5 2 VCC = 35V 35 9 3 6 2 VGE [V] 3-3 5-6 -9 5-2 2 4 6 8 2 4 VCE [V] -5,,2,4,6,8,,2,4,6 QG [µc] 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=3.3Ω,VCE=35V 2 8 8 7 Erec, Erec, 6 6 4 2 5 IF [A] E [] 4 8 3 6 2 4 2,,2,4,6,8,,2,4,6,8 2, 2,2 2,4 VF [V] 2 4 6 8 2 4 6 8 2 IF [A] Datasheet 9 V3. 28-6-29
F3L2R2N2H3_B47 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=A,VCE=35V 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) 8 Erec, Erec, ZthJC : Diode 7 6 5 E [] 4 ZthJC [K/W] 3, 2 5 5 2 3 35 RG [Ω] i: ri[k/w]: τi[s]:,36,72 2,36,67 3,28,596 4,38,7,,,, t [s] 输出特性 IGBT, 三电平 ( 典型 ) outputcharacteristicigbt,3-level(typical) IC=f(VCE) VGE=5V 输出特性 IGBT, 三电平 ( 典型 ) outputcharacteristicigbt,3-level(typical) IC=f(VCE) Tvj=5 C 3 275 3 275 VGE = 9V VGE = 7V VGE = 5V VGE = 3V VGE = V VGE = 9V 2 2 2 2 75 75 5 5 75 75 5 5,,5,,5 2, 2,5 3, VCE [V],,5,,5 2, 2,5 3, 3,5 4, 4,5 5, VCE [V] Datasheet V3. 28-6-29
F3L2R2N2H3_B47 传输特性 IGBT, 三电平 ( 典型 ) transfercharacteristicigbt,3-level(typical) IC=f(VGE) VCE=2V 开关损耗 IGBT, 三电平 ( 典型 ) switchinglossesigbt,3-level(typical) Eon=f(IC),Eoff=f(IC) VGE=±5V,RGon=3.3Ω,RGoff=3.3Ω,VCE=35V 3 275 45 4 Eon, Eoff, Eon, Eoff, 2 35 2 3 75 5 E [] 2 75 5 5 5 5 6 7 8 9 2 VGE [V] 5 5 2 3 开关损耗 IGBT, 三电平 ( 典型 ) switchinglossesigbt,3-level(typical) Eon=f(RG),Eoff=f(RG) VGE=±5V,IC=5A,VCE=35V 瞬态热阻抗 IGBT, 三电平 transientthermalimpedanceigbt,3-level ZthJC=f(t) 45 4 Eon, Eoff, Eon, Eoff, ZthJC : IGBT 35 3 E [] 2 ZthJC [K/W] 5, 5 5 5 2 3 35 RG [Ω] i: ri[k/w]: τi[s]:,23,72 2,782,67 3,28,596 4,297,7,,,, t [s] Datasheet V3. 28-6-29
F3L2R2N2H3_B47???IGBT, 三电平 ( 典型 ) switchingtimesigbt,3-level(typical) tdon=f(ic),tr=f(ic),tdoff=f(ic),tf=f(ic) VGE=±5V,RGon=3.3Ω,RGoff=3.3Ω,VCE=35V,Tvj=5 C 反偏安全工作区 IGBT, 三电平 (RBSOA) reversebiassafeoperatingareaigbt,3-level(rbsoa) IC=f(VCE) VGE=±5V,RGoff=3.3Ω,Tvj=5 C tdon tr tdoff 36 33 IC, Modul IC, Chip tf 3 27 24 2 t [] 8 5, 2 9 6 3, 5 5 2 3 2 3 4 5 6 7 VCE [V]???IGBT, 三电平 ( 典型 ) switchingtimesigbt,3-level(typical) tdon=f(rg),tr=f(rg),tdoff=f(rg),tf=f(rg) VGE=±5V,IC=5A,VCE=35V,Tvj=5 C 栅极电荷特性 IGBT, 三电平 ( 典型 ) gatechargecharacteristicigbt,3-level(typical) VGE=f(QG) IC=5A,Tvj= C tdon 5 VCC = 35 V tr tdoff tf 2 9 6 3 t [] VGE [V] -3, -6-9 -2, 5 5 2 3 35 RG [Ω] -5,,3,6,9,2,5 QG [µc] Datasheet 2 V3. 28-6-29
F3L2R2N2H3_B47 正向偏压特性 二极管, 三电平 ( 典型 ) forwardcharacteristicofdiode,3-level(typical) IF=f(VF) 开关损耗 二极管, 三电平 ( 典型 ) switchinglossesdiode,3-level(typical) Erec=f(IF) RGon=2.4Ω,VCE=35V 3 275 4, 3,5 Erec, Erec, 2 3, 2 75 2,5 IF [A] 5 E [] 2,,5 75, 5,5,,5,,5 2, 2,5 VF [V], 5 5 2 3 IF [A] 开关损耗 二极管, 三电平 ( 典型 ) switchinglossesdiode,3-level(typical) Erec=f(RG) IF=5A,VCE=35V 瞬态热阻抗 二极管, 三电平 transientthermalimpedancediode,3-level ZthJC=f(t) 4, Erec, Erec, ZthJC : Diode 3,5 3, 2,5 E [] 2, ZthJC [K/W],5,,,5, 5 5 2 RG [Ω] i: ri[k/w]: τi[s]:,575,72 2,226,67 3,32,596 4,45,7,,,, t [s] Datasheet 3 V3. 28-6-29
F3L2R2N2H3_B47 负温度系数热敏电阻 温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) Rtyp R[Ω] 2 4 6 8 2 4 6 TNTC [ C] Datasheet 4 V3. 28-6-29
F3L2R2N2H3_B47 接线图 /Circuitdiagram 封装尺寸 /Packageoutlines Infineon Datasheet 5 V3. 28-6-29
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