FF3R12ME4P_B11 EconoDUAL 3 模块 采用第四代沟槽栅 / 场终止 IGBT4 和 HE 型发射极控制二极管带有 pressfit 压接管脚和温度检测 NTC/TIM EconoDUAL 3modulewithTrench/FieldstopIGBT4andEmitterControlledHEdiodeandPressFIT/NTC/ TIM VCES = 12V IC nom = 3A / ICRM = 6A 典型应用 TypicalApplications 电机传动 Motordrives 伺服驱动器 Servodrives UPS 系统 UPSsystems 风力发电机 Windturbines 电气特性 ElectricalFeatures 低 VCEsat LowVCEsat Tvjop=15 C Tvjop=15 C 机械特性 MechanicalFeatures 标准封装 Standardhousing 预涂导热介质 Pre-appliedThermalInterfaceMaterial ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 2-21 22-23 Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V3. www.infineon.com 217-3-3
FF3R12ME4P_B11 IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES 12 V TH = 7 C, Tvj max = 175 C IC nom 3 A tp = 1 ms ICRM 6 A VGES +/-2 V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 散热器热阻 Thermalresistance,junctiontoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IC = 3 A, VGE = 15 V IC = 3 A, VGE = 15 V IC = 3 A, VGE = 15 V VCE sat 1,75 2, 2,5 2,1 V V V IC = 11,5 ma, VCE = VGE, VGEth 5,2 5,8 6,4 V VGE = -15 V... +15 V QG 2,25 µc RGint 2,5 Ω f = 1 MHz,, VCE = 25 V, VGE = V Cies 18,5 nf f = 1 MHz,, VCE = 25 V, VGE = V Cres 1,5 nf VCE = 12 V, VGE = V, ICES 3, ma VCE = V, VGE = 2 V, IGES 4 na IC = 3 A, VCE = 6 V VGE = ±15 V RGon = 1,3 Ω IC = 3 A, VCE = 6 V VGE = ±15 V RGon = 1,3 Ω IC = 3 A, VCE = 6 V VGE = ±15 V RGoff = 1,3 Ω IC = 3 A, VCE = 6 V VGE = ±15 V RGoff = 1,3 Ω IC = 3 A, VCE = 6 V, LS = 8 nh VGE = ±15 V, di/dt = 65 A/ () RGon = 1,3 Ω IC = 3 A, VCE = 6 V, LS = 8 nh VGE = ±15 V, du/dt = 31 V/ () RGoff = 1,3 Ω VGE 15 V, VCC = 8 V VCEmax = VCES -LsCE di/dt tp 1, 每个 IGBT/perIGBT validwithifxpre-appliedthermalinterfacematerial td on tr td off tf Eon Eoff ISC RthJH,17,18,19,5,5,5,45,56,6,7,11,12 9,9 17, 19,5 25, 37,5 42, 12 A,137 K/W Tvj op -4 15 C Datasheet 2 V3. 217-3-3
FF3R12ME4P_B11 二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value VRRM 12 V IF 3 A tp = 1 ms IFRM 6 A VR = V, tp = 1 ms, VR = V, tp = 1 ms, I²t 19 155 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy 结 - 散热器热阻 Thermalresistance,junctiontoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IF = 3 A, VGE = V IF = 3 A, VGE = V IF = 3 A, VGE = V IF = 3 A, - dif/dt = 65 A/ (Tvj=15 C) VR = 6 V VGE = -15 V IF = 3 A, - dif/dt = 65 A/ (Tvj=15 C) VR = 6 V VGE = -15 V IF = 3 A, - dif/dt = 65 A/ (Tvj=15 C) VR = 6 V VGE = -15 V 每个二极管 /perdiode validwithifxpre-appliedthermalinterfacematerial VF IRM Qr Erec RthJH 1,65 1,65 1,65 335 39 41 3,5 58, 67, 19, 29,5 34,5 A²s A²s 2,1 V V V A A A µc µc µc,198 K/W Tvj op -4 15 C 负温度系数热敏电阻 /NTC-Thermistor 特征值 /CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance R1 偏差 DeviationofR1 耗散功率 Powerdissipation B- 值 B-value B- 值 B-value B- 值 B-value 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. TNTC = 25 C R25 5, kω TNTC = 1 C, R1 = 493 Ω R/R -5 5 % TNTC = 25 C P25 2, mw R2 = R25 exp [B25/5(1/T2-1/(298,15 K))] B25/5 3375 K R2 = R25 exp [B25/8(1/T2-1/(298,15 K))] B25/8 3411 K R2 = R25 exp [B25/1(1/T2-1/(298,15 K))] B25/1 3433 K Datasheet 3 V3. 217-3-3
FF3R12ME4P_B11 模块 /Module 绝缘测试电压 Isolationtestvoltage 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 最高基板工作温度 Maximumbaseplateoperationtemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque 重量 Weight RMS, f = 5 Hz, t = 1 min VISOL 2,5 kv 基本绝缘 (class1,iec6114) basicinsulation(class1,iec6114) 端子至散热器 /terminaltoheatsink 端子至端子 /terminaltoterminal 端子至散热器 /terminaltoheatsink 端子至端子 /terminaltoterminal Cu Al2O3 14,5 13, 12,5 1, CTI > 2 min. typ. max. mm mm LsCE 2 nh TH=25 C, 每个开关 /perswitch RCC'+EE' 1,2 mω 螺丝 M5 根据相应的应用手册进行安装 ScrewM5-Mountingaccordingtovalidapplicationnote 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote Tstg -4 125 C TBPmax 125 C M 3, 6, Nm M 3, - 6, Nm G 345 g Lagerung und Transport von Modulen mit TIM => siehe AN212-7 Storage and shipment of modules with TIM => see AN212-7 Datasheet 4 V3. 217-3-3
FF3R12ME4P_B11 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=15V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=15 C 6 5 6 5 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 4 4 3 3 2 2 1 1,,5 1, 1,5 2, 2,5 3, 3,5 VCE [V],,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=2V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=1.3Ω,RGoff=1.3Ω,VCE=6V 6 5 9 8 Eon, Eon, Eoff, Eoff, 7 4 6 3 E [] 5 4 2 3 2 1 1 5 6 7 8 9 1 11 12 13 VGE [V] 1 2 3 4 5 6 Datasheet 5 V3. 217-3-3
FF3R12ME4P_B11 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=3A,VCE=6V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJH=f(t) 14 12 Eon, Eon, Eoff, Eoff, 1 ZthJH : IGBT 1,1 E [] 8 6 ZthJH [K/W] 4,1 2 2 4 6 8 1 12 14 16 RG [Ω] i: ri[k/w]: τi[s]: 1,87,545 2,459,255 3,628,124 4,196 1,3,1,1,1,1 1 1 t [s] 反偏安全工作区 IGBT, 逆变器 (RBSOA) reversebiassafeoperatingareaigbt,inverter(rbsoa) IC=f(VCE) VGE=±15V,RGoff=1.3Ω,Tvj=15 C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 7 6 IC, Modul IC, Chip 6 5 5 4 4 IF [A] 3 3 2 2 1 1 2 4 6 8 1 12 14 VCE [V],,2,4,6,8 1, 1,2 1,4 1,6 1,8 2, 2,2 2,4 VF [V] Datasheet 6 V3. 217-3-3
FF3R12ME4P_B11 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=1.3Ω,VCE=6V 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=3A,VCE=6V 5 45 Erec, Erec, 4 35 Erec, Erec, 4 3 35 3 25 E [] 25 E [] 2 2 15 15 1 1 5 5 1 2 3 4 5 6 IF [A] 2 4 6 8 1 12 14 16 RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJH=f(t) 负温度系数热敏电阻 温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 1 ZthJH : Diode 1 Rtyp,1 1 ZthJH [K/W] R[Ω],1 1 i: ri[k/w]: τi[s]: 1,144,542 2,772,23 3,844,121 4,22 1,19,1,1,1,1 1 1 t [s] 1 2 4 6 8 1 12 14 16 TNTC [ C] Datasheet 7 V3. 217-3-3
FF3R12ME4P_B11 接线图 /Circuitdiagram 封装尺寸 /Packageoutlines Infineon Datasheet 8 V3. 217-3-3
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