41 6 人工晶体学报 Vol. 41 No. 6 2012 12 JOURNAL OF SYNTHETIC CRYSTALS December 2012 熊次远, 李庆忠, 钱善华, 闫俊霞 214122 MRR 7820 nm /min Ra 9. 12 nm MRR MRR O786 A 1000-985X 2012 06-1726-06 New Wire Cutting Fluid Suitable for Multi-wire Saw of Silicon Crystals XIONG Ci-yuan LI Qing-zhong QIAN Shan-hua YAN Jun-xia College of Mechanical Engineering Jiangnan University Wuxi 214122 China Received 18 July 2012 accepted 15 October 2012 Abstract In this paper through the silicon wafer wear test simulation wire cutting process to evaluate the liquid's cutting performance. Firstiy selecting the main components of wire cutting fluid from the contrast experiment then optimizationing the content of the components by orthogonal experiment and optimal formula was obtained finally the optimal formula and a market cutting fluid were compared under the same conditions. The results showed that MRR was 7820 nm /min and Ra was 9. 12 nm under the optimal formula. Compared with the market cutting fluid MRR was a little less but obtained better surface roughness. The reason is that new cutting fluid improved the dispersity and lubricity. More alkaline increased the chemical actions and effective improved the wafer surface quality. Key words silicon wafer multi-wire sawing wire cutting fuilds material removal rate MRR 1 1 156 mm 156 mm 200 μm 210 mm 210 mm 100 μm 2 3 4 2012-07-18 2012-10-15 51175228 2011 1988- E-mail xiongciyuan@ sina. com E-mail qingzhongli@ 163. com
6 1727 5 6 ph 7 8 9 2 2. 1 125 mm 0. 6 mm 30 mm 30 mm 2. 2 1 1 50wt% 1 5wt% 1 4wt% 4wt% 2wt% 1 1 0. 4 2 1 Table 1 Main material name in the wire cutting fluid Type 1# 2# Dispersant Polyethylene glycol 400 PEG 400 Polyethylene glycol 200 PEG 200 Organic alkali Diethanolamine Trolamine Surfactant Sodium dodecyl benzene sulfonate SDBS Sodium dodecyl sulfate SDS Grits 800# SiC 14μm 320# SiC 40μm Defoaming agent Chelating agent 2. 3 Silicone oil Ethylene diamine tetraacetic acid disodium salt θ 100 ml 1 θ = H - h 100% 1 H θ H h 2. 4 1 Fig. 1 The wafer wear device schemes Fig. 2 2 The wafer surface morphology after the wear MMW-1A 1 ~ 2 mm
1728 41 1 20 N 60 r /min 30 min 2. 5 XS205DU 3 2 MRR = m 2 - m 1 ρst = m 2 - m 1 ρtπ r 2 2 - r 1 2 m 2 - m 1 - ρ- t- r 2 - r 1 - CSPM5000 4 2 3 3. 1 2 800# SiC SiC 4 MRR Ra 3 Fig. 4 MRR and Ra of different dispersant Fig. 3 MRR and Ra of different size of grits organic alkali and surfactant 3 0 10 6 h 12 h 24 h 800# 60% 54% 45% 320# 50% 43% 35% 800#SiC 5 6 800# 320# 800#SiC
6 1729 Fig. 5 5 800# SiC 250 Surface morphology of 800# SiC cutting fluid 250 Fig. 6 6 320# SiC 250 Surface morphology of 320# SiC cutting fluid 250 3. 2 4 1 2 2 7 PEG 400 PEG 200 PEG 400 PEG 400 ph ph = 3. 9 SiC Zeta ph 11 ph = 10. 52 ph = 9. 16 Zeta 7 SDBS CMC = 0. 0012 mol /L SDS 0. 008 mol /L SDBS Fig. 7 7 SiC Dispersion process of SiC abrasive particle 8 Fig. 8 Change of two cutting fluid's friction coefficient with time 3. 3 2 T i i = 1 ~ 4 i MRR R R A > R D > R C > R B PEG 400
1730 41 MRR SDBS MRR Zeta 2 Table 2 The results of orthogonal experimental Number Dispersant A /wt% Surfactant B /wt% Organic alkali C /wt% Grits D /m fluid m sand MRR /nm min - 1 Ra /nm 1 1 40% 1 2% 1 6% 1 1 0. 4 4877 13. 56 2 1 2 4% 2 8% 2 1 0. 5 3799 10. 33 3 1 3 6% 3 10% 3 1 0. 6 5013 9. 04 4 1 4 8% 4 12% 4 1 0. 7 7631 10. 89 5 2 50% 1 2 4 3439 10. 76 6 2 2 1 3 6759 11. 37 7 2 3 4 2 4551 12. 94 8 2 4 3 1 4021 11. 55 9 3 60% 1 3 2 6553 10. 63 10 3 2 4 1 6228 9. 87 11 3 3 1 4 7631 9. 95 12 3 4 2 3 6143 8. 80 13 4 70% 1 4 3 5869 13. 58 14 4 2 3 4 7067 10. 65 15 4 3 2 1 4124 9. 05 16 4 4 1 2 5989 9. 21 T 1 21320 20738 19266 19249 T 2 18770 23852 19369 20892 T 3 26556 21320 22654 23783 T 4 23048 23784 24280 25769 R 7785 3114 5013 6519 11 MRR 7631 nm /min A 3 B 2 C 4 D 4 A 3 B 2 C 4 D 4 4wt% 2wt% MRR 7820 nm /min 7631 nm /min 3. 4 3 8 MRR 9 10 Table 3 3 The comparison with optimal formula and a market cutting fluid ph θ after 6 h MRR /nm min - 1 Ra /nm Optimal formula 11. 4 68% 7820 9. 12 Market cutting fluid 8. 4 62% 8179 11. 6
6 1731 Fig. 9 9 Surface morphology under optimum formula Fig. 10 10 Surface morphology under a market cutting fluid 4 ph 1 PEG 400 SDBS 800#SiC 2 PEG 400 60wt% 12wt% SDBS 4wt% 4wt% 2wt% 1 0. 7 3 MRR 1 Moller H J. Basic Mechanisms and Models of Multi-wire Sawing J. Advanced Engineering Materials 2004 6 7 501-513. 2 Wang W Liu Z X Zhang W et al. Abrasive Electrochemical Multi-wire Slicing of Solar Silicon Ingots Into Wafers J. CIRP Annals- Manufacturing Technology 2011 60 1 255-258. 3. J. 2008 29 3 324-327. Ren L Li Y L Yang J K et al. The Characteristic Research of Suspending Liquid in Multi-wire-saw of Super Thin Solar Wafers J. Acta Energiae Solaris Sinica 2008 29 3 324-327 in Chinese. 4. J. 2009 38 2 372-377. Gao Y F Ge P Q Li S J. Study on the Machining Performance of Single Crystal Silicon Wafer Cut by Using Reciprocating Electroplated J. Journal of Synthetic Crystals 2009 38 2 372-377 in Chinese. 5 Bhagavat M Prasad V Kao I. Elasto-hydrodynamic Interaction in the Free Abrasive Wafer Slicing Using a Wiresaw Modeling and Finite Element Analysis J. Journal of Tribology 2000 122 394-404. 6. J. 2008 33 4 292-295. Fu Y Liu Z B Song E J et al. Composition and Development of Wire Cutting Fluids Used for Hard and Brittle Materials J. Semiconductor Technology 2008 33 4 292-295 in Chinese. 7. Si J. 2010 35 10 976-979. He J L Wang X J Tong L et al. Research on Slurry in the Cutting Process of Si Wafer for Solar Cell J. Semiconductor Technology 2010 35 10 976-979 in Chinese. 8 Oishi H Asakawa K Matsuzaki J et al. Development of Water-Soluble Coolant for Multiwire Saw Slicing of 400 mm Diameter Silicon J. Journal of the Japan Society for Precision Engineering 2000 66 6 912-916. 9. J. 2009 6 174 43-48. Yuan Y R Wei X Ding Y. Development of Slurry Actions Duri ng Free Abrasive Multi-wire sawing J. Diamond &Abrasives Engineering 2009 6 174 43-48 in Chinese. ( 下转第 1736 页 )
1736 41 8. LaP 3 O 9 Ce Tb J. 1993 10 2 70-72. Gao X Hong G Y Liu S Z. Preparation and Spectroscopic Properties of LaP 3 O 9 Ce Tb Phosphors J. Chinese Journal of Applied Chemistry 1993 10 2 70-72 in Chinese. 9 Wang D Wang Y H Wang L L. UV and Vacuum Ultraviolet Luminescence Properties of LaP 3 O 9 Eu 3 + J. J. Electrochem. Soc. 2007 154 1 J32-J34. 10. D. 2005 46. Yang D M. Study on Preparation and Luminescent Properties of Nano-scale Rare Earth Luminescent Materials D. Sichuan Sichuan University 2005 in Chinese. 11. Ce 3 + Tb 3 + LaBO 3 J. 1990 26 2 191-199. Guo F Y Liu N H. Luminescence and Energy Transfer of Ce 3 + and Tb 3 + in LaBO 3 J. Acta Scicentiarum Naturalum Universitis Pekinesis 1990 269 2 191-199 in Chinese. 12. Y 2 O 3 Eu 3 + J. 2004 24 4 407-410. Zhang S Y Wei K. Study on Luminescence Property of Nanocrystalline Y 2 O 3 Eu 3 + Red Phosphor J. Spectroscopy and Spectral Analysis 2004 24 4 407-410 in Chinese. 櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒 ( 上接第 1731 页 ) 10. SiC J. 2012 41 4 1076-1081. Li Y Wang X Y Li S J et al. Experiments of Ultrasonic-assisted Wire Sawing of SiC Single Crystal J. Journal of Synthetic Crystals 2012 41 4 1076-1081 in Chinese. 11. TiO 2 J. 2005 20 2 311-315. Liu F S C Xiao H N Li Y P et al. Polyethylene Glycol Adsorption Behavior on Nanoparticulate TiO 2 and Its Stablity in Aqueous Dispersions 檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨 J. Journal of Inorganic Materials 2005 20 2 311-315 in Chinese. 2013 80-774 / CA 2013 16 20 50 / 12 600 80-774 1. 0200006809006830924 2. 733 100018 010-65494890 65492968 010-65493320 www. jtxb. cn E - mail gsytb1982@ 126. com 檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨