ph mm 0. 6 mm 30 mm 30 mm wt% 1 5wt% 1 4wt% 4wt% 2wt% Table 1 Main material name in the wire cutti

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1 41 6 人工晶体学报 Vol. 41 No JOURNAL OF SYNTHETIC CRYSTALS December 2012 熊次远, 李庆忠, 钱善华, 闫俊霞 MRR 7820 nm /min Ra nm MRR MRR O786 A X New Wire Cutting Fluid Suitable for Multi-wire Saw of Silicon Crystals XIONG Ci-yuan LI Qing-zhong QIAN Shan-hua YAN Jun-xia College of Mechanical Engineering Jiangnan University Wuxi China Received 18 July 2012 accepted 15 October 2012 Abstract In this paper through the silicon wafer wear test simulation wire cutting process to evaluate the liquid's cutting performance. Firstiy selecting the main components of wire cutting fluid from the contrast experiment then optimizationing the content of the components by orthogonal experiment and optimal formula was obtained finally the optimal formula and a market cutting fluid were compared under the same conditions. The results showed that MRR was 7820 nm /min and Ra was nm under the optimal formula. Compared with the market cutting fluid MRR was a little less but obtained better surface roughness. The reason is that new cutting fluid improved the dispersity and lubricity. More alkaline increased the chemical actions and effective improved the wafer surface quality. Key words silicon wafer multi-wire sawing wire cutting fuilds material removal rate MRR mm 156 mm 200 μm 210 mm 210 mm 100 μm xiongciyuan@ sina. com qingzhongli@ 163. com

2 ph mm 0. 6 mm 30 mm 30 mm wt% 1 5wt% 1 4wt% 4wt% 2wt% Table 1 Main material name in the wire cutting fluid Type 1# 2# Dispersant Polyethylene glycol 400 PEG 400 Polyethylene glycol 200 PEG 200 Organic alkali Diethanolamine Trolamine Surfactant Sodium dodecyl benzene sulfonate SDBS Sodium dodecyl sulfate SDS Grits 800# SiC 14μm 320# SiC 40μm Defoaming agent Chelating agent 2. 3 Silicone oil Ethylene diamine tetraacetic acid disodium salt θ 100 ml 1 θ = H - h 100% 1 H θ H h Fig. 1 The wafer wear device schemes Fig. 2 2 The wafer surface morphology after the wear MMW-1A 1 ~ 2 mm

3 N 60 r /min 30 min 2. 5 XS205DU 3 2 MRR = m 2 - m 1 ρst = m 2 - m 1 ρtπ r r 1 2 m 2 - m 1 - ρ- t- r 2 - r 1 - CSPM # SiC SiC 4 MRR Ra 3 Fig. 4 MRR and Ra of different dispersant Fig. 3 MRR and Ra of different size of grits organic alkali and surfactant h 12 h 24 h 800# 60% 54% 45% 320# 50% 43% 35% 800#SiC # 320# 800#SiC

4 Fig # SiC 250 Surface morphology of 800# SiC cutting fluid 250 Fig # SiC 250 Surface morphology of 320# SiC cutting fluid PEG 400 PEG 200 PEG 400 PEG 400 ph ph = 3. 9 SiC Zeta ph 11 ph = ph = Zeta 7 SDBS CMC = mol /L SDS mol /L SDBS Fig. 7 7 SiC Dispersion process of SiC abrasive particle 8 Fig. 8 Change of two cutting fluid's friction coefficient with time T i i = 1 ~ 4 i MRR R R A > R D > R C > R B PEG 400

5 MRR SDBS MRR Zeta 2 Table 2 The results of orthogonal experimental Number Dispersant A /wt% Surfactant B /wt% Organic alkali C /wt% Grits D /m fluid m sand MRR /nm min - 1 Ra /nm % 1 2% 1 6% % 2 8% % 3 10% % 4 12% % % % T T T T R MRR 7631 nm /min A 3 B 2 C 4 D 4 A 3 B 2 C 4 D 4 4wt% 2wt% MRR 7820 nm /min 7631 nm /min MRR 9 10 Table 3 3 The comparison with optimal formula and a market cutting fluid ph θ after 6 h MRR /nm min - 1 Ra /nm Optimal formula % Market cutting fluid %

6 Fig. 9 9 Surface morphology under optimum formula Fig Surface morphology under a market cutting fluid 4 ph 1 PEG 400 SDBS 800#SiC 2 PEG wt% 12wt% SDBS 4wt% 4wt% 2wt% MRR 1 Moller H J. Basic Mechanisms and Models of Multi-wire Sawing J. Advanced Engineering Materials Wang W Liu Z X Zhang W et al. Abrasive Electrochemical Multi-wire Slicing of Solar Silicon Ingots Into Wafers J. CIRP Annals- Manufacturing Technology J Ren L Li Y L Yang J K et al. The Characteristic Research of Suspending Liquid in Multi-wire-saw of Super Thin Solar Wafers J. Acta Energiae Solaris Sinica in Chinese. 4. J Gao Y F Ge P Q Li S J. Study on the Machining Performance of Single Crystal Silicon Wafer Cut by Using Reciprocating Electroplated J. Journal of Synthetic Crystals in Chinese. 5 Bhagavat M Prasad V Kao I. Elasto-hydrodynamic Interaction in the Free Abrasive Wafer Slicing Using a Wiresaw Modeling and Finite Element Analysis J. Journal of Tribology J Fu Y Liu Z B Song E J et al. Composition and Development of Wire Cutting Fluids Used for Hard and Brittle Materials J. Semiconductor Technology in Chinese. 7. Si J He J L Wang X J Tong L et al. Research on Slurry in the Cutting Process of Si Wafer for Solar Cell J. Semiconductor Technology in Chinese. 8 Oishi H Asakawa K Matsuzaki J et al. Development of Water-Soluble Coolant for Multiwire Saw Slicing of 400 mm Diameter Silicon J. Journal of the Japan Society for Precision Engineering J Yuan Y R Wei X Ding Y. Development of Slurry Actions Duri ng Free Abrasive Multi-wire sawing J. Diamond &Abrasives Engineering in Chinese. ( 下转第 1736 页 )

7 LaP 3 O 9 Ce Tb J Gao X Hong G Y Liu S Z. Preparation and Spectroscopic Properties of LaP 3 O 9 Ce Tb Phosphors J. Chinese Journal of Applied Chemistry in Chinese. 9 Wang D Wang Y H Wang L L. UV and Vacuum Ultraviolet Luminescence Properties of LaP 3 O 9 Eu 3 + J. J. Electrochem. Soc J32-J D Yang D M. Study on Preparation and Luminescent Properties of Nano-scale Rare Earth Luminescent Materials D. Sichuan Sichuan University 2005 in Chinese. 11. Ce 3 + Tb 3 + LaBO 3 J Guo F Y Liu N H. Luminescence and Energy Transfer of Ce 3 + and Tb 3 + in LaBO 3 J. Acta Scicentiarum Naturalum Universitis Pekinesis in Chinese. 12. Y 2 O 3 Eu 3 + J Zhang S Y Wei K. Study on Luminescence Property of Nanocrystalline Y 2 O 3 Eu 3 + Red Phosphor J. Spectroscopy and Spectral Analysis in Chinese. 櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒櫒 ( 上接第 1731 页 ) 10. SiC J Li Y Wang X Y Li S J et al. Experiments of Ultrasonic-assisted Wire Sawing of SiC Single Crystal J. Journal of Synthetic Crystals in Chinese. 11. TiO 2 J Liu F S C Xiao H N Li Y P et al. Polyethylene Glycol Adsorption Behavior on Nanoparticulate TiO 2 and Its Stablity in Aqueous Dispersions 檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨 J. Journal of Inorganic Materials in Chinese / CA / www. jtxb. cn E - mail gsytb1982@ 126. com 檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨檨