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1 Document Number: HTL7G6S9P Product Data Sheet Rev. 2.3, 1/17 LDMOS 射频功率晶体管 HTL7G6S9P 1. 产品描述 HTL7G6S9P 是一款为 VHF/UHF 频段射频功率放大器而设计的 LDMOS 射频功率晶体管器件内部集成静电保护电路 1-6MHz, 8W, 7.2V WIDE BAND RF POWER LDMOS TRANSISTOR 2. 典型性能 OUTLINE DRAWING Frequency VDD Pin Eff (MHz) (V) (W) (W) -47 (1) (2) (3) 基于 3.6V,UHF 频段,W 参考设计性能测试 +/ / / / /-. 2. 基于 7.2V,UHF 频段,8W 参考设计性能测试 3. 基于 7.2V,VHF 频段,8W 参考设计性能测试 4. 上述性能为参考设计整个带内的最低性能 3. 产品应用 VHF 频段手持对讲机 1 +/ / / Terminal No. 1 : Gate 2 : Source 3 : Drain UNIT:mm UHF 频段手持对讲机 1-6MHz 其他应用驱动或末级功放 4. 极限参数参数符号条件值单位漏源电压 V DSS - V 栅源电压 V GG - - ~ 1 V 工作电压 V DD - 9 V 温度存储 T stg - - ~ 工作结温 T J - - ~ 热阻 Zth(j-c) - 6. / W LDMOS Kunshan Huatai Eletronics Ltd. 1

2 Document Number: HTL7G6S9P Product Data Sheet Rev. 2.3, 1/17. 电气特性参数符号测试条件最小值典型值最大值单位击穿电压 V (BR)DDS V GG =V, I D =39.6uA - - V 漏极漏电流 I DSS V DD =12V, V GG =V ua 栅极漏电流 I GSS V DD =V, V GG =1V ua 阈值电压 V th V DD =V GG, I D = 39.6uA V 输出功率 P out V DD =3.6V, P in =.1W W 漏极效率 η d f=43mhz,i dq =ma % 输出功率 P out V DD =7.2V,P in =.32W W 漏极效率 η d f=43mhz,i dq =ma % 输出功率 P out V DD =7.2V,P in =.32W W 漏极效率 η d f=174mhz,i dq =ma % 6. ESD 特性条件等级 HBM (JESD22 - A114) MM (EIA/JESD22 - A1) CDM (JESD22 - C11) 1B A III 7. 负载失配测试 ( 基于华太 Demo PA 测试板 ) 条件 VSWR = :1 at all Phase Angles CW: VDD=8.4V, IDQ=mA, f=43mhz, =38.dBm. 结果晶体管性能不变 LDMOS Kunshan Huatai Eletronics Ltd. 2

3 Document Number: HTL7G6S9P Product Data Sheet Rev. 2.3, 1/17 8. 典型直流性能 CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE IDS VS. VGS CHANNEL DISSIPATION (W) On PCB with Heat-sink I DS (A) Ta=+ VDS=7.4V AMBIENT TEMPERATURE ( ) V GS (V) IDS VS. VDS Ciss VS.VGS I DS (A) Ta=+ VGS=3V VGS=2.8V C iss (pf) 7 6 Ta=+ f=1mhz 1. VGS=2.7V. VGS=V V DS (V) V GS (V) Crss VS. VDS Coss VS. VDS Ta=+ f=1mhz Ta=+ f=1mhz C rss (pf) 1 C oss (pf) V DG (V) 1 V DS (V) LDMOS Kunshan Huatai Eletronics Ltd. 3

4 Document Number: HTL7G6S9P Product Data Sheet Rev. 2.3, 1/17 9. UHF-Band W 典型性能 (f = -47MHz, VDD = 3.6V) (dbm) VDD=3.6V IDQ=mA, VS. Pin MHz 43MHz. 47MHz (A) Gain(dB) VDD=3.6V IDQ=mA Gain, Eff VS. Pin Gain MHz 43MHz 47MHz (dbm) 3 VDD=3.6V IDQ=mA Pin=dBm, VS. Freq freq (MHz) (A) (w) , Eff VS. Freq 2. VDD=3.6v IDQ=mA 1 Pin=dBm freq (MHz) (dbm) 3 3, VS. IDQ 1. f=43mhz VDD=3.6V. Pin=dBm (A) (W) f=43mhz VDD=3.6V Pin=dBm, Eff VS. IDQ LDMOS Kunshan Huatai Eletronics Ltd. 4

5 Document Number: HTL7G6S9P Product Data Sheet Rev. 2.3, 1/17 1. UHF-Band 3.6V W 参考设计 -47MHz (@VDD = 3.6V, IDQ = ma) VDD V GG mm L3 C12 C13 C14 RF-in C9 C1 C11 C1 7mm L1 2mm R1 2mm 2mm L2 C4 C C6 C7 C8 RF-out C2 C3 注 : 微带线特性阻抗均为欧姆编号描述型号制造商 C1, C8, C11, C14 1 pf Chip Capacitors GRM188C1H11JA1 murata C2 pf Chip Capacitor GRM188C1HJA1 murata C3 12 pf Chip Capacitors GRM188C1H1JA1 murata C4 pf Chip Capacitor GRM188C1HJA1 murata C 6 pf Chip Capacitor GRM188C1H6RJA1 murata C6 pf Chip Capacitor GRM188C1HJA1 murata C7 7 pf Chip Capacitors GRM188C1H7RJA1 murata C9 4.7 uf Chip Capacitors GRM32ER61H474KA12L murata C1, C13 1 nf Chip Capacitors GRM188C1H12JA1 murata C12 1 uf Chip Capacitors GRM32ER61HKA12L murata L1 2.7 nh Chip Inductor GRM188C1H272JA1 murata L2 W.D.:.31mm, I.D.: 1.2mm, 4 turns Arbitrary L3 W.D.:., I.D.: mm, 8 turns Arbitrary R1 1 Ω Chip Resistor Arbitrary Q1 RF LDMOS HTL7G6S9P Kunshan Huatai Electronics Ltd. PCB εr = 4.3 FR4 Arbitrary LDMOS Kunshan Huatai Eletronics Ltd.

6 Kunshan Huatai Electronics Ltd. Document Number: HTL7G6S9P Product Data Sheet Rev. 2.3, 1/ UHF-Band 8W 典型性能 (f = -47MHz, VDD = 7.2V) (dbm) IDQ=mA, VS. Pin MHz 43MHz. 47MHz (A) Gain (db) IDQ=mA Gain, Eff VS. Pin Gain MHz 43MHz 47MHz (dbm) 3 IDQ=mA Pin=dBm P, I D VS. Freq, VS. Freq Freq (MHz) (A) (W) 1 IDQ=mA Pin=dBm, Eff VS. Freq Freq (MHz) (dbm) f=43mhz Pin=dBm, VS. IDQ (A) (w) f=43mhz Pin=dBm, Eff VS. IDQ LDMOS Kunshan Huatai Eletronics Ltd. 6

7 Document Number: HTL7G6S9P Product Data Sheet Rev. 2.3, 1/ UHF-Band 7.2V 8W 参考设计 -47MHz = 7.2V, IDQ = ma) VDD V GG mm L3 C11 C12 C13 RF-in C8 C9 C1 C1 mm 2mm C2 C3 L1 2mm R1 mm L2 C4 C C6 C8 RF-out 注 : 微带线特性阻抗均为欧姆编号描述型号制造商 C1, C7 1 pf Chip Capacitors GRM188C1H11JA1 murata C2, C3 pf Chip Capacitor GRM188C1HJA1 murata C4, C 22 pf Chip Capacitor GRM188C1H2JA1 murata C6 8 pf Chip Capacitor GRM188C1H8RJA1 murata C8 4.7 uf Chip Capacitor GRM32ER61H474KA12L murata C9, C12 1 nf Chip Capacitors GRM188C1H12JA1 murata C1, C13 1 pf Chip Capacitors GRM188C1H11JA1 murata C11 1 uf Chip Capacitors GRM32ER61HKA12L murata L1 2.7 nh Chip Inductor GRM188C1H272JA1 murata L2 W.D.:.31mm, I.D.: 1.2mm, 4 turns Arbitrary L3 W.D.:., I.D.: mm, 8 turns Arbitrary R1 1 Ω Chip Resistor Arbitrary Q1 RF LDMOS HTL7G6S9P Kunshan Huatai Electronics Ltd. PCB εr = 4.3 FR4 Arbitrary LDMOS Kunshan Huatai Eletronics Ltd. 7

8 Document Number: HTL7G6S9P Product Data Sheet Rev. 2.3, 1/ VHF-Band 8W 典型性能 (f = MHz, VDD = 7.2V) (dbm) IDQ=mA, VS. Pin 136MHz 6MHz. 174MHz (A) Gain (db) IDQ=mA Gain, Eff VS. Pin Gain 136MHz 6MHz 174MHz (dbm) 3 IDQ=mA Pin=dBm, VS. Freq Freq (MHz) (A) (W) 1 IDQ=mA Pin=dBm, Eff VS. Freq Freq (MHz) (dbm) f=6mhz Pin=dBm, VS. IDQ (A) (W) f=6mhz Pin=dBm, Eff VS. IDQ LDMOS Kunshan Huatai Eletronics Ltd. 8

9 Document Number: HTL7G6S9P Product Data Sheet Rev. 2.3, 1/ VHF-Band 7.2V 8W 参考设计 MHz = 7.2V, IDQ = ma) VDD V GG mm L4 C13 C14 C RF-in C1 C11 C12 C1 mm mm C2 C3 L1 2mm R1 C4 L2 L3 2mm C C6 C7 C8 C9 C8 RF-out 注 : 微带线特性阻抗均为欧姆编号描述型号制造商 C1, C1, C13, C16 1pF Chip Ceramic Capacitors GRM188C1H11JA1 Murata C2 6pF Chip Ceramic Capacitors GRM188C1H6RJA1 Murata C3 27pF Chip Ceramic Capacitors GRM188C1H27JA1 Murata C4, pf Chip Ceramic Capacitors GRM188C1H1JA1 Murata C,C7 22pF Chip Ceramic Capacitors GRM188C1H2JA1 Murata C6 18pF Chip Ceramic Capacitors GRM188C1H18JA1 Murata C8 2pF Chip Ceramic Capacitors GRM188C1H2RJA1 Murata C9 1pF Chip Ceramic Capacitors GRM188C1H1JA1 Murata C12, C 1nF Chip Ceramic Capacitors GRM188C1H12JA1 Murata C11 4.7uF Chip Ceramic Capacitors GRM32ER61H474KA12L Murata C14 1uF Chip Ceramic Capacitors GRM32ER61HKA12L Murata L1 39nH Chip Inductor GRM188C1H393A1 Arbitrary L2,L3 D:., Inside: 1.2mm, 3 Turns Arbitrary L4 D:.31mm, Inside: mm, 9 Turns Arbitrary R1 Ω Chip Resistors Arbitrary Q1 RF LDMOS HTL7G6S9P Kunshan Huatai Electronics Ltd. PCB εr = 4.3 FR4 Arbitrary LDMOS Kunshan Huatai Eletronics Ltd. 9

10 Document Number: HTL7G6S9P Product Data Sheet Rev. 2.3, 1/17. 封装尺寸及管脚分布 LDMOS Kunshan Huatai Eletronics Ltd. 1

HT647PL

HT647PL LDMOS 射频功率晶体管 1. 产品特性无内匹配设计, 方便应用于从 HF 至 600MHz 频率范围内的各类窄宽带功放增强鲁棒性设计适用于 20-28V 供电电压内部集成的增强 ESD 设计优异的热稳定性符合 RoHS 规范 HT647PL HT647PLB HT647PL 封装 : H2110S-4L 2. 产品用途模拟及数字广播气象及航空雷达专网通信基站工业用激光源和等离子设备