AN978 MOS ( ) MOS MGD MOS MGD MGD BUCK SD P MOSFET 1. MOSFET IGBT 1 1
1 10~15V 2 3 1 MOS MGDs MOSFET IGBT 2 IR2110 1 ( MOSFET ) 2
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2 HEX-2 25ns 17ns HEXFET (V CC =15V, 9) HEX-3 HEX-4 HEX-5 38ns 53ns 78ns 23ns 34ns 54ns HEX-6 116ns 74ns 2. 2 IR2110 MOS 21 TTL/COMS MGDs IR211x IR215x V DD 3V~20V V DD 10% MGDs IR210xIR212xIR213x 1.5 2V 0 1 MGDs MGDs MGDs MGDs 4
12 MGDs 120ns95 ns 12 13 VssCOM5V 50ns 2.2 N MOSFET ( ) N P CMOS MGD MOSFET 0.12A~2A 2 2 5 VCC 8.6/8.2V 2.3 ( 3)COM 500V 600V -5V V S V B 2 V B V S 5
MOS 2 MOSFET 15V V S COM 500V 2 / / V S dv/dt / 50V/ns MGD MGDs V S V B 8.78.3V Vcc V S COM 5V Ldi/dt 3 2, PWM Vcc V CC 1 MGT 2 -I qbs 3 4 MGT - 5 5 DT98-2 IC 6
Q= MOSFET f= I CbSLeak= I lson =20mAI lsoff =20mAt w =200ns V f = V LS = Q LS = 500V/600V IC 5nC 1200V IC 20nC 2528 29 HEXFET MOSFET IRF450 100KHz 12mA 4. MOS MGD MGD a) (P D(lv)q ) VDDVCC VSS 15V 25 3.5mW 125 5mW b b1), MGD P G VQ G f 100kHz HEXFET IRF450Vgs15V P G =21512010-9 10010³=0.36W V SS / V CC MGD 6 10 MGD P G 6/16 b2) CMOS P CMOS =V CC Q CMOS f Q CMOS 5 30nC MGD. 100kHz 7
c) P D(hv)q V S V S 400V 25 0.06mW 125 2.25mW V S d) (P D(hv)sw )( 2) P ( 3 Cb-sub) d1) ( ) V CC V R (VR+VCC)Q p f Q P f,q P V R 50V 4nC 500V 7nC 400V100kHz 0.3W Cd-sub QP V S 5 Vcc d2) / Cb-sub Vs V R COM QV/2 450V 7nC 100kHz QVf=710-9 45010 5 =0.31W IR2110 Cb-sub VS Cb-sub Cd-sub 100kHz a c MGD Tamax=Tjmax-PDRthj-a Rthj-a 8
IRF830 400V 100kHz PD(1V)q 0.004W PD(1V)swPCMOS=151610-9 10010³= 0.024 PG=2152810-9 10010³= 0.084 PD(hv)q 0.002 PD(hv)sw(400+200)910-9 10010³= 0.42 0.534 PD(hv)sw 200V 2.2d.1 LM334 1mA 25 650mV 2mV/ 5 V S IC V S HVIC IC V S COM 5V V S IC 5V di/dt 4 IC 1V S -COM 2V B -V S 9
AN978 MOS ( ) 9 MOSFET IGBT 0 IGBT MOSFET IGBT IGBT - dv/dt - -- - dv/dt dv/dt 18 IGBT IGBT 15A 6V/ns 19 1
4V5V 5.6V 4710 0 IGBT C OES IRGPC50F IGBT 20V/ns dv/dt 5A 20 P N MOSFET Q3 Q4 R1 D1 Q3 Q4 D2C2 R2 Q2 C3C4D3 D4 21 IR2110 20 MOS 600nC 270A IGBT 22 1ms 0.2ms 2
5KHZ 50% 10ms IR IGBT IGBT NPT IGBT Ccg Cge Ccg Cge 3
10 BUCK 25 IR2117 BUCK COM IC COM 10 Q V SS 20V DC/DC 1 26 V S +12V MGD 2 BUCK PWM L1 CB 4
27 R1 V IN V O VS VO R1 CB R1 D3 12V 15V 1N4110 1N4107 BUCK 10V 20V PWM IR2110 11 28 IR2110 4 12 29 IR2110 PWM 5
( 34 5,) 2.1 MOSFET 6 7 L1 L2 10 IR2110 10ns 25ns 29-2 dv/dt EMI 30 10 IRF830 HEXFET 500KHZ IR2110 6
13 di/dt COM 1 IR213x 56 MGD COM 1 8 2 3 7
4 8
16 21 MGD 17 IR2110 9
VCC VS COM 5-10V COM VS dv/dt 50V/ns VSS 50ns 1. "New High Voltage Bridge Driver Simplifies PWM Inverter Design," by D. Grant, B. Pelly. PCIM Conference 1989 2. Application Note AN-967 "PWM Motor Drive with HEXFET III" 3. Application Note AN-961 "Using HEXSense in Current-Mode Control Power Supplies" 4. Application Note AN-959 "An Introduction to the HEXSense" 5. "Dynamic Performance of Current Sensing Power MOSFETs" by D. Grant and R. Pearce, Electronic Letters, Vol. 24 No. 18, Sept 1, 1988 IR Xi an Application Center 10
AN978 MOS ( ) 1a 1b 1c PCB 1d IC 2a 6 VS COM 2b 2c IC 1
3a C b 0.47µF ESR V S 3b V CC COM ESR C b 10 3c 7 3d VB COM VS dv/dt HEXFRED DT97-3 IC 6. 5a L D1 L S2 MOSFET L S1 L D2 MOFET 2
5b IR2110 IR2119 PCB Q1D Q2S 100µF/250V 67 8 Q1 Q2 10V IR2110 5 50V L D2 L S2 di/dt 3
5 10A20ns 50nH 25V 50nH 10 di/dt IR2110 MGD MOS 5b 4ns 0Ω IR2110 5 90V 9 9 27Ω 18V 48ns 4
12 2 V S dv/dt MOSFET MGD PCB 10 MOSFET IR2110 2V 7 MGD MOS MGD 11 8A dv/dt IR2110 MGD 600nC IGBT Q1 Q2 Q3 Q4 Q3 Q4 R1 Q1 Q2 R1 R1 RC 12 60A 50ns 40ns 0.1µF 13 14 HEXFETs R DSon 5
6
15 10µF 10µF 0.1µF HEXFET IGBT IGBT 8 dv/dt 16 IR2125 IR2125 MOS CMOS 555 IR2125 IGBT IGBT 100K 555 18 100nF IR2125 5-15V 1N4148 10nF 555 3 7.5KHz V S +15V 17 IGBT IR2125 8 +12V 555 7
1 100K 100nF CMOS IR2125 555 18V 100K/1W 500V IR2125 IR2125 V B I QBS 8