EasyPACK 模块 带有 pressfit 压接管脚和温度检测 NTC EasyPACKmoduleandPressFIT/NTC J VCES = 650V IC nom = 37,5A / ICRM = 75A 典型应用 TypicalApplications 汽车应用 AutomotiveApplications 高频开关应用 HighFrequencySwitchingApplication zh DC/DCconverter 辅助逆变器 AuxiliaryInverters 混合动力汽车 HybridElectricalVehicles(H)EV 感应加热和电焊机 InductiveHeatingandWelding 电气特性 ElectricalFeatures 增加阻断电压至 650V Increasedblockingvoltagecapabilityto650V 高速 IGBTH3 HighSpeedIGBTH3 低电感设计 Lowinductivedesign 低开关损耗 LowSwitchingLosses 机械特性 MechanicalFeatures 2.5kV 交流 分钟 绝缘 2.5kVACminInsulation 高爬电距离和电气间隙 HighCreepageandClearanceDistances 集成 NTC 温度传感器 IntegratedNTCtemperaturesensor PressFIT 压接技术 PressFITContactTechnology 符合 RoHS RoHScompliant 集成的安装夹使安装坚固 Rugged mounting due to integrated mounting clamps ModuleLabelCode BarcodeCode28 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit -5 6-2-9 20-2 22-23 ULapproved(E83335)
IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 集电极电流 Implementedcollectorcurrent 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES 650 V ICN 75 A TC = 05 C, Tvj max = 75 C IC nom 37,5 A tp = ms ICRM 50 A TC = 25 C, Tvj max = 75 C Ptot 275 W VGES +/-20 V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase IC = 37,5 A, VGE = 5 V IC = 37,5 A, VGE = 5 V IC = 37,5 A, VGE = 5 V Tvj = 50 C VCE sat,50,55,60,85 V V V IC =,20 ma, VCE = VGE, VGEth 4,9 5,8 6,5 V VGE = -5 V... +5 V QG 0,80 µc RGint 0,0 Ω f = MHz,, VCE = 25 V, VGE = 0 V Cies 4,70 nf f = MHz,, VCE = 25 V, VGE = 0 V Cres 0,4 nf VCE = 650 V, VGE = 0 V, ICES 0,05 ma VCE = 0 V, VGE = 20 V, IGES 400 na IC = 37,5 A, VCE = 300 V VGE = ±5 V RGon = 4,3 Ω IC = 37,5 A, VCE = 300 V VGE = ±5 V RGon = 4,3 Ω IC = 37,5 A, VCE = 300 V VGE = ±5 V RGoff = 4,3 Ω IC = 37,5 A, VCE = 300 V VGE = ±5 V RGoff = 4,3 Ω Tvj = 50 C Tvj = 50 C Tvj = 50 C Tvj = 50 C IC = 37,5 A, VCE = 300 V, LS = 25 nh VGE = ±5 V, di/dt = 300 A/ (Tvj = 50 C) RGon = 4,3 Ω Tvj = 50 C IC = 37,5 A, VCE = 300 V, LS = 25 nh VGE = ±5 V, du/dt = 5000 V/ (Tvj = 50 C) RGoff = 4,3 Ω Tvj = 50 C VGE 5 V, VCC = 360 V VCEmax = VCES -LsCE di/dt tp 4, Tvj = 50 C td on tr td off tf Eon Eoff ISC 0,09 0,09 0,02 0,0 0,02 0,02 0,9 0 0,006 0,02 0,03 3 0,36 0,40 0,33 0,5 0,58 430 A 每个 IGBT/perIGBT RthJC 0,45 0,55 K/W 2
外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions 每个 IGBT/perIGBT λpaste=w/(m K)/λgrease=W/(m K) RthCH 5 K/W Tvj op -40 50 C 二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value VRRM 650 V IF 25 A tp = ms IFRM 50 A VR = 0 V, tp = 0 ms, I²t 50,0 A²s 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IF = 25 A, VGE = 0 V IF = 25 A, VGE = 0 V IF = 25 A, VGE = 0 V IF = 25 A, - dif/dt = 3000 A/ (Tvj=50 C) VR = 300 V VGE = -5 V IF = 25 A, - dif/dt = 3000 A/ (Tvj=50 C) VR = 300 V VGE = -5 V IF = 25 A, - dif/dt = 3000 A/ (Tvj=50 C) VR = 300 V VGE = -5 V Tvj = 50 C Tvj = 50 C Tvj = 50 C Tvj = 50 C VF IRM Qr Erec,65,60,55 45,0 48,0 5,0,05,65,90 5 0,39 0,44 2,5 V V V 每个二极管 /perdiode RthJC,25,45 K/W 每个二极管 /perdiode λpaste=w/(m K)/λgrease=W/(m K) A A A µc µc µc RthCH 0,95 K/W Tvj op -40 50 C 负温度系数热敏电阻 /NTC-Thermistor 特征值 /CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance R00 偏差 DeviationofR00 耗散功率 Powerdissipation B- 值 B-value B- 值 B-value B- 值 B-value 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. TC = 25 C R25 5,00 kω TC = 00 C, R00 = 493 Ω R/R -5 5 % TC = 25 C P25 20,0 mw R2 = R25 exp [B25/50(/T2 - /(298,5 K))] B25/50 3375 K R2 = R25 exp [B25/80(/T2 - /(298,5 K))] B25/80 34 K R2 = R25 exp [B25/00(/T2 - /(298,5 K))] B25/00 3433 K 3
模块 /Module 绝缘测试电压 Isolationtestvoltage 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature Anpresskraft für mech. Bef. pro Feder mountig force per clamp 重量 Weight RMS, f = 50 Hz, t = min. VISOL 2,5 kv 基本绝缘 (class,iec640) basicinsulation(class,iec640) 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal impr.al2o3,5 6,3 0,0 5,0 CTI > 200 min. typ. max. mm mm LsCE 5 nh TC=25 C, 每个开关 /perswitch RCC'+EE' 5,50 mω Tstg -40 25 C F 20-50 N G 24 g Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25 A rms per connector pin. VGE muss im Kurzschluss auf 5V begrenzt werden (z.b. Klemmschaltung). VGE has to be limited to 5V during shortcircuit (e.g. clamping). 4
输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=5V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=50 C IC [A] 75 70 65 60 55 50 45 40 35 30 25 20 5 0 5 Tvj = -40 C Tvj = 50 C 0 0,0 0,5,0,5 2,0 2,5 VCE [V] IC [A] 50 40 30 20 0 00 90 80 70 60 50 40 30 20 0 VGE = 9 V VGE = V VGE = 3 V VGE = 5 V VGE = 7 V 0 0,0 0,5,0,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=20V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±5V,RGon=4.3Ω,RGoff=4.3Ω,VCE=300V 50 35 20 05 Tvj = 50 C,2,,0 0,9 0,8 Eon, Eon, Eon, Tvj = 50 C Eoff, Eoff, Eoff, Tvj = 50 C 90 0,7 IC [A] 75 E [] 60 0,5 45 30 0,4 0,3 5 0, 0 5 6 7 8 9 0 2 VGE [V] 0,0 0 5 0 5 20 25 30 35 40 45 50 55 60 65 70 75 IC [A] 5
开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±5V,IC=37.5A,VCE=300V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJH=f(t),2,,0 0,9 Eon, Eon, Eon, Tvj = 50 C Eoff, Eoff, Eoff, Tvj = 50 C 0 ZthJH : IGBT 0,8 E [] 0,7 0,5 ZthJH [K/W] 0,4 0,3 0, 0,0 0 2 4 6 8 0 2 4 RG [Ω] i: ri[k/w]: τi[s]: 0,03 0,0005 2 0,07 0,005 3 0,4 0,05 4 0, 0,00 0,0 0, 0 t [s] 反偏安全工作区 IGBT, 逆变器 (RBSOA) reversebiassafeoperatingareaigbt,inverter(rbsoa) IC=f(VCE) VGE=±5V,RGoff=4.3Ω,Tvj=50 C 电容特性 IGBT, 逆变器 ( 典型 ) capacitycharcteristicigbt,inverter(typical) C=f(VCE) VGE=0V,Tvj=25 C,f=MHz 60 40 IC, Modul IC, Chip 0000 20 00 000 Cies IC [A] 80 C [pf] Coes Cres 60 00 40 20 0 0 00 200 300 400 500 600 700 VCE [V] 0 0 50 00 50 200 250 300 350 400 450 500 VCE [V] 6
栅极电荷特性 IGBT, 逆变器 ( 典型 ) gatechargecharacteristicigbt,inverter(typical) VGE=f(QG) IC=37.5A,Tvj=25 C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) VGE [V] 5 3 9 7 5 3 - -3-5 -7-9 - -3 VCC = 20V VCC = 480V -5 0,0 0, 0,3 0,4 0,5 0,7 0,8 QG [µc] IF [A] 50 45 40 35 30 25 20 5 0 5 Tvj = -40 C Tvj = 50 C 0 0,0 0,5,0,5 2,0 2,5 VF [V] 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=4.3Ω,VCE=300V 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=25A,VCE=300V 0,8 0,7 Erec, Erec, Erec, Tvj = 50 C 0,8 0,7 Erec, Erec, Erec, Tvj = 50 C 0,5 0,5 E [] 0,4 E [] 0,4 0,3 0,3 0, 0, 0,0 0 5 0 5 20 25 30 35 40 45 50 IF [A] 0,0 0 2 4 6 8 0 2 4 RG [Ω] 7
瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJH=f(t) 负温度系数热敏电阻 温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 0 ZthJH : Diode 00000 Rtyp 0000 ZthJH [K/W] R[Ω] 000 i: ri[k/w]: τi[s]: 0,0005 2 0,005 3 0,9 0,05 4 0,5 0, 0,00 0,0 0, 0 t [s] 00 0 20 40 60 80 00 20 40 60 TC [ C] 8
接线图 /circuit_diagram_headline J 封装尺寸 /packageoutlines Infineon FxxxRxxW xx TM EasyPIM GYYWW 9
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