IHM-B 模块 采用第三代高速沟槽栅 / 场终止 IGBT 和第三代发射极控制二极管 IHM-BmodulewithfastTrench/FieldstopIGBT3andEmitterControlled3diode CES = 33 IC nom = 5A / ICRM = A 典型应用 TypicalApplications 斩波应用 ChopperApplications 中压变流器 MediumoltageConverters 电机传动 MotorDrives 牵引变流器 TractionDrives UPS 系统 UPSSystems 风力发电机 WindTurbines 电气特性 ElectricalFeatures 高直流电压稳定性 HighDCStability 高短路能力, 自限制短路电流 High Short Circuit Capability, Self Limiting Short CircuitCurrent 低开关损耗 LowSwitchingLosses 低 CEsat LowCEsat 无与伦比的坚固性 UnbeatableRobustness Tvjop=5 C Tvjop=5 C CEsat 带正温度系数 CEsatwithpositiveTemperatureCoefficient 机械特性 MechanicalFeatures 碳化硅铝 (AlSiC) 基板提供更高的温度循环能力 AlSiC Base Plate for increased Thermal Cycling Capability 封装的 CTI>6 PackagewithCTI>6 IHMB 封装 IHMBHousing 绝缘的基板 IsolatedBasePlate ModuleLabelCode BarcodeCode28 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit -5 6-2-9 2-2 22-23
IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedalues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage Tvj = -4 C Tvj = 5 C CES 33 33 TC = 95 C, Tvj max = 5 C IC nom 5 A tp = ms ICRM A TC = 25 C, Tvj max = 5 C Ptot 7, kw GES +/-2 特征值 /Characteristicalues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IC = 5 A, GE = 5 IC = 5 A, GE = 5 IC = 5 A, GE = 5 Tvj = 5 C CE sat 2,55 3, 3,5 3, 3,45 IC = 72, ma, CE = GE, GEth 5,2 5,8 6,4 GE = -5... +5, CE = 8 QG 42, µc RGint,42 Ω f = MHz,, CE = 25, GE = Cies 28 nf f = MHz,, CE = 25, GE = Cres 6, nf CE = 33, GE =, ICES 5, ma CE =, GE = 2, IGES 4 na IC = 5 A, CE = 8 GE = ±5 RGon =, Ω, CGE = 33 nf IC = 5 A, CE = 8 GE = ±5 RGon =, Ω, CGE = 33 nf IC = 5 A, CE = 8 GE = ±5 RGoff =,5 Ω, CGE = 33 nf IC = 5 A, CE = 8 GE = ±5 RGoff =,5 Ω, CGE = 33 nf Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C IC = 5 A, CE = 8, LS = 85 nh GE = ±5, di/dt = 45 A/ (Tvj = 5 C) RGon =,47 Ω, CGE = 33 nf Tvj = 5 C IC = 5 A, CE = 8, LS = 85 nh GE = ±5, du/dt = 2 / (Tvj = 5 C) RGoff =,5 Ω, CGE = 33 nf Tvj = 5 C GE 5, CC = 25 CEmax = CES -LsCE di/dt tp, Tvj = 5 C td on tr td off tf Eon Eoff ISC,6,6,6,55,55,55 3, 3,2 3,2,3,35,35 9 255 29 6 2 23 64 每个 IGBT/perIGBT RthJC 7,35 K/kW 每个 IGBT/perIGBT λpaste=w/(m K)/λgrease=W/(m K) RthCH, K/kW Tvj op -4 5 C A 2
二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedalues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value 最大损耗功率 Maximumpowerdissipation 最小开通时间 Minimumturn-ontime Tvj = -4 C Tvj = 5 C RRM 33 33 IF 5 A tp = ms IFRM A R =, tp = ms, R =, tp = ms, Tvj = 5 C I²t 59 55 ka²s ka²s PRQM 24 kw ton min, 特征值 /Characteristicalues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IF = 5 A, GE = IF = 5 A, GE = IF = 5 A, GE = IF = 5 A, - dif/dt = 45 A/ (Tvj=5 C) R = 8 GE = -5 IF = 5 A, - dif/dt = 45 A/ (Tvj=5 C) R = 8 GE = -5 IF = 5 A, - dif/dt = 45 A/ (Tvj=5 C) R = 8 GE = -5 Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C F IRM Qr Erec 3, 2,75 2,65 5 8 85 65 35 6 65 65 95 3,85 3,25 每个二极管 /perdiode RthJC 3, K/kW 每个二极管 /perdiode λpaste=w/(m K)/λgrease=W/(m K) A A A µc µc µc RthCH, K/kW Tvj op -4 5 C 3
模块 /Module 绝缘测试电压 Isolationtestvoltage 局部放电停止电压 Partialdischargeextinctionvoltage DC 稳定性 DCstability 模块基板材料 Materialofmodulebaseplate 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque 重量 Weight RMS, f = 5 Hz, t = min. ISOL 6, k RMS, f = 5 Hz, QPD pc (acc. to IEC 287) ISOL 2,6 k, fit CE D 2 AlSiC 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal CTI > 6 32,2 9, min. typ. max. mm mm LsCE 6, nh TC=25 C, 每个开关 /perswitch RCC'+EE',2 mω Tstg -4 5 C 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote 螺丝 M4 根据相应的应用手册进行安装 ScrewM4-Mountingaccordingtovalidapplicationnote 螺丝 M8 根据相应的应用手册进行安装 ScrewM8-Mountingaccordingtovalidapplicationnote M 4,25-5,75 Nm G 2 g M,8 8, - - 2, Nm Nm 4
输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(CE) GE=5 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(CE) Tvj=5 C 27 24 Tvj = 5 C 27 24 GE = 2 GE = 5 GE = 2 GE = GE = 9 GE = 8 2 2 8 8 IC [A] 5 IC [A] 5 2 2 9 9 6 6 3 3,,5,,5 2, 2,5 3, 3,5 4, 4,5 5, CE [],,5,,5 2, 2,5 3, 3,5 4, 4,5 5, CE [] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(GE) CE=2 27 24 2 8 Tvj = 5 C 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) GE=±5,RGon=.47Ω,RGoff=.5Ω,CE=8,CGE=33 nf Eon, Tvj = 5 C 9 Eon, Eoff, Tvj = 5 C Eoff, 8 7 6 IC [A] 5 E [] 5 2 9 6 3 4 2 5 6 7 8 9 2 3 GE [] 5 5 2 25 IC [A] 5
开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) GE=±5,IC=5A,CE=8,CGE=33nF 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) 6 4 Eon, Tvj = 5 C Eon, Eoff, Tvj = 5 C Eoff, ZthJC : IGBT 2 E [] 8 6 ZthJC [K/kW] 4 2 2 3 4 5 6 RG [Ω] i: ri[k/kw]: τi[s]:,3 2 3,869,42 3,46,256 4,2 4,984,,,, t [s] 反偏安全工作区 IGBT, 逆变器 (RBSOA) reversebiassafeoperatingareaigbt,inverter(rbsoa) IC=f(CE) GE=±5,RGoff=.5Ω,Tvj=5 C,CGE=33nF 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(F) 35 IC, Modul IC, Chip 25 Tvj = 5 C 25 2 2 IC [A] 5 IF [A] 5 5 5 5 5 2 25 35 CE [],,5,,5 2, 2,5 3, 3,5 4, 4,5 F [] 6
开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=.47Ω,CE=8 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=5A,CE=8 Erec, Tvj = 5 C Erec, Erec, Tvj = 5 C Erec, 25 25 2 2 E [] 5 E [] 5 5 5 5 5 2 25 IF [A] 2 3 4 5 6 7 8 9 RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) 安全工作区 二极管, 逆变器 (SOA) safeoperationareadiode,inverter(soa) IR=f(R) Tvj=5 C ZthJC : Diode 36 IR, Modul 24 ZthJC [K/kW] IR [A] 8 2 i: ri[k/kw]: τi[s]: 2,44,2 2 6,266,36 3 2,787,252 4,59 5,587,,,, t [s] 6 5 5 2 25 35 R [] 7
接线图 /circuit_diagram_headline 封装尺寸 /packageoutlines 8
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