Databook

SUNSTAR 商斯达实业集团是集研发 生产 工程 销售 代理经销 技术咨询 信息服务等为一体的高科技企业, 是专业高科技电子产品生产厂家, 是具有 10 多年历史的专业电子元器件供应商, 是中国最早和最大的仓储式连锁规模经营大型综合电子零部件代理分销商之一, 是一家专业代理和分銷世界各大品牌 IC 芯片和電子元器件的连锁经营綜合性国际公司 在香港 北京 深圳 上海 西安 成都等全国主要电子市场设有直属分公司和产品展示展销窗口门市部专卖店及代理分销商, 已在全国范围内建成强大统一的供货和代理分销网络 我们专业代理经销 开发生产电子元器件 集成电路 传感器 微波光电元器件 工控机 /DOC/DOM 电子盘 专用电路 单片机开发 MCU/DSP/ARM/FPGA 软件硬件 二极管 三极管 模块等, 是您可靠的一站式现货配套供应商 方案提供商 部件功能模块开发配套商 专业以现代信息产业 ( 计算机 通讯及传感器 ) 三大支柱之一的传感器为主营业务, 专业经营各类传感器的代理 销售生产 网络信息 科技图书资料及配套产品设计 工程开发 我们的专业网站 中国传感器科技信息网 ( 全球传感器数据库 ) www.sensor-ic.com 服务于全球高科技生产商及贸易商, 为企业科技产品开发提供技术交流平台 欢迎各厂商互通有无 交换信息 交换链接 发布寻求代理信息 欢迎国外高科技传感器 变送器 执行器 自动控制产品厂商介绍产品到中国, 共同开拓市场 本网站是关于各种传感器 - 变送器 - 仪器仪表及工业自动化大型专业网站, 深入到工业控制 系统工程计测计量 自动化 安防报警 消费电子等众多领域, 把最新的传感器 - 变送器 - 仪器仪表买卖信息, 最新技术供求, 最新采购商, 行业动态, 发展方向, 最新的技术应用和市场资讯及时的传递给广大科技开发 科学研究 产品设计人员 本网站已成功为石油 化工 电力 医药 生物 航空 航天 国防 能源 冶金 电子 工业 农业 交通 汽车 矿山 煤炭 纺织 信息 通信 IT 安防 环保 印刷 科研 气象 仪器仪表等领域从事科学研究 产品设计 开发 生产制造的科技人员 管理人员 和采购人员提供满意服务 我公司专业开发生产 代理 经销 销售各种传感器 变送器 敏感元器件 开关 执行器 仪器仪表 自动化控制系统 : 专门从事设计 生产 销售各种传感器 变送器 各种测控仪表 热工仪表 现场控制器 计算机控制系统 数据采集系统 各类环境监控系统 专用控制系统应用软件以及嵌入式系统开发及应用等工作 如热敏电阻 压敏电阻 温度传感器 温度变送器 湿度传感器 湿度变送器 气体传感器 气体变送器 压力传感器 压力变送 称重传感器 物 ( 液 ) 位传感器 物 ( 液 ) 位变送器 流量传感器 流量变送器 电流 ( 压 ) 传感器 溶氧传感器 霍尔传感器 图像传感器 超声波传感器 位移传感器 速度传感器 加速度传感器 扭距传感器 红外传感器 紫外传感器 火焰传感器 激光传感器 振动传感器 轴角传感器 光电传感器 接近传感器 干簧管传感器 继电器传感器 微型电泵 磁敏 ( 阻 ) 传感器 压力开关 接近开关 光电开关 色标传感器 光纤传感器 齿轮测速传感器 时间继电器 计数器 计米器 温控仪 固态继电器 调压模块 电磁铁 电压表 电流表等特殊传感器 同时承接传感器应用电路 产品设计和自动化工程项目 欢迎索取免费详细资料 设计指南和光盘 ; 产品凡多, 未能尽录, 欢迎来电查询 更多产品请看本公司产品专用销售网站 : 商斯达中国传感器科技信息网 :http://www.sensor-ic.com/ 商斯达工控安防网 :http://www.pc-ps.net/ 商斯达电子元器件网 :http://www.sunstare.com/ 商斯达微波光电产品网 :HTTP://www.rfoe.net/ 商斯达消费电子产品网 ://www.icasic.com/ 商斯达军工产品网 :http://www.junpinic.com/ 商斯达实业科技产品网 ://www.sunstars.cn/ 传感器销售热线 : 地址 : 深圳市福田区福华路福庆街鸿图大厦 1602 室电话 :0755-83607652 83376489 83376549 83370250 83370251 82500323 传真 :0755-83376182 (0)13902971329 MSN: SUNS8888@hotmail.com 邮编 :518033 E-mail:szss20@163.com QQ: 195847376 深圳赛格展销部 : 深圳华强北路赛格电子市场 2583 号电话 :0755-83665529 技术支持 : 0755-83394033 13501568376

FUTURE PRODUCTS I.) 3 rd Q to 4 th Q of 2000 A.) MMICs: 1. EMA103X, 104X, 105X: 7-8.5, 5.5-7, 4-5.5GHz, 2W, 15 gain PA with low IMD. 2. EMA204X: 17-20GHz, 1W, 15 gain PA with low IMD. 3. EMA303X: 17-27GHz, 20m, 22 gain Amp. 4. EMA501X: 37-41GHz, 20m, 22 gain Amp. B.) Internally Matched Power FETs: 1. 2W for 20.8-21.4 GHz (EIA2021-2P) in flange packages. 2. 5W/10W for 10.7-11.7, 12.75-13.25, 13.75-14.5, 14.0-14.5, 14.4-15.35 GHz in flange packages. 3. 4W for 17.3-18.1, 17.7-18.7, 18.15-18.75, and 18.7-19.7 GHz in flange packages. C.) FETs: 1. More 10V biased low distortion GaAs power FETs (EFC series). 2. High gain low distortion GaAs power FETs (EFB series). 3. High gain hetero-junction power FETs (EPC series). 4. More power FETs with via-hole source grounding. 5. More FETs in low cost surface mount plastic packages: 85mil-uX, SOT23 and SOT89. 6. EH series hetero-junction power FETs with high linearity, breakdown and output power. II.) 2001 and Beyond A.) MMICs: 1. 36-40GHz, 30m PA. 2. 28-32GHz, 30m PA. 3. 20-26GHz, 30m PA. 4. 17-20 GHz, 33m PA. 5. 10-17GHz, 24-36m PA. 6. 0.5-10GHz, LN to PA. B.) Internally Matched Power FETs: 1. 10-20W, 10-20GHz. 2. 0.5-40W, 1-10GHz. C.) Enhanced Mode Power FETs (Single Bias) D.) HBTs

CURRENT PRODUCTS excelics.doc 5/00 I.) Super Low Noise High Gain Hetero-junction FETs: - Chips (non via-hole) - 70-mil ceramic packages - 0.5-1 NF & 10-13 Ga @ 12GHz II.) High Efficiency Hetero-junction Power FETs: - Chips (non via-hole or via-hole) - 70-mil ceramic & 100-mil/170-mil flange ceramic packages - SOT23 and SOT89 surface mount plastic packages and application circuits - 0.1-10W output power over 0.1-70GHz III.) Low Distortion GaAs Power FETs: - Chips (non via-hole or via-hole) - 70-mil ceramic & 100-mil/170-mil flange ceramic packages - SOT89 surface mount plastic packages and application circuits - 0.06-5W output power over 0.1-60GHz IV.) Internally Matched Power FETs: - 10.7-11.7, 12.75-13.25, 13.75-14.5, 14.0-14.5, 14.4-15.35, 16.2-16.4, 17.3-18.1, 17.7-18.7, 18.15-18.75 and 18.7-19.7 GHz - 30-39m P-1, 37-49m OIP3, 5-9.5 G-1, and 20-30% PAE - non-hermetic metal flange packages V.) MMICs: - 9-16, 22-26, and 26-32GHz low noise and power amplifiers - 18-28m P-1, 15-21 gain, 1.5-2.5:1 Input VSWR, and 2-3:1 output VSWR - 20-32GHz sub-harmonically pumped mixer with LO amplifier - RF: 20-32GHz, LO: 10-15GHz, IF: DC-5GHz, 11 conversion loss, 8m LO drive - Chips

EXCELICS PRODUCT LIST-I (Super Low Noise High Gain Heterojunction FETs) DEVICE TYPE SIZE CHIP SIZE W(Gate)/Finger Bias N.F. * Ga * Freq. Idss Bvgd** Freq. Range Remark um 2 um 2 um GHz ma V A.) Chips: EPB018A5 0.3x180 320X290 30 2V, 15mA 0.50 13.0 12 15-80 6 Up to 65 GHz P-1 + =15m EPB018A7 0.3X180 320X290 30 2V, 15mA 0.65 12.5 12 15-80 6 Up to 65 GHz P-1 + =15m EPB018A9 0.3X180 320X290 30 2V, 15mA 0.95 12.0 12 15-80 6 Up to 65 GHz P-1 + =15m EPB025A 0.3x250 420x260 62.5 2V, 15 ma 0.80 11.0 12 20-80 5 Up to 45 GHz P-1 + =15m B.) Non-hermetic Low Cost 70 mil Packages: EPB018A5-70 0.3x180 - - 2V, 15mA 0.50 13.0 12 15-80 6 Up to 30 GHz P-1 + =15m EPB018A7-70 0.3x180 - - 2V, 15mA 0.65 12.5 12 15-80 6 Up to 30 GHz P-1 + =15m EPB018A9-70 0.3x180 - - 2V, 15 ma 0.95 11.5 12 15-80 6 Up to 30 GHz P-1 + =15m EPB025A-70 0.3x250 - - 2V, 15 ma 0.85 10.5 12 20-80 5 Up to 30 GHz P-1 + =15m Note: *: Typical Values **: Typical Values measured at Ig=10 ua + : Typical Values measured at 3V/25mA

(Super Low Noise High Gain Heterojunction FETs) Excelics Filtronic NEC Fujitsu Mitsubishi Celeritrk Stanford HP Toshiba EPB018A5 NE32400 FHX13X(14X,45X) MGFC4418D/E EPB018A7 NE32400 FHX04X(14X) MGFC4427D(4417D) EPB018A9 LP7512 NE33200 FHX34X(04X,05X,06X) MGFC4424D(4414E) CF001-03 JS8905-AS EPB025A LP7512 NE33200 FHX34X(04X,05X,06X) MGFC4414E(4424D) JS8901-AS EPB018A5-70 NE32584C FHX13LG MGF4919G(4918E, 4418D/E) SPF-1676 ATF36077 EPB018A7-70 NE32484A FHX04LG(14LG) MGF4916G(4918E, 4318E) CFA0103L1 SPF-1576 EPB018A9-70 LP7512-P70 NE33284A(42484A) FHX05LG MGF4914E(4714CP, 4314E) CFA0103L2/L3 SPF-2086 EPB025A-70 LP7512-P70 NE33284A(42484A) FHX05LG MGF4914E(4714CP, 4314E) CFA0103L2/L3 SPF-2086

EXCELICS PRODUCT LIST-II (High Efficiency Heterojunction Power FETs) DEVICE TYPE SIZE CHIP SIZE W(Gate)/Finger Bias P-1* G-1* Freq. Idss BVgd** Freq. Range Remark A.) Chips: um 2 um 2 um m GHz ma V GHz EPA018A 0.3x180 320x290 30 6V, 0.5 Idss 20.0 13.0 18 30-80 15 Up to 65.75 NF@12GHz EPA025A 0.3x250 420x260 62.5 8V, 0.5 Idss 22.5 11.0 18 40-105 15 Up to 45 EPA030C 0.3x300 330x320 37.5 8V, 0.5 Idss 23.0 11.0 18 50-130 15 Up to 50 EPA040A 0.3x400 350x340 50 8V, 0.5 Idss 24.5 11.0 18 70-160 15 Up to 45 EPA060A 0.3x600 500x320 37.5 8V, 0.5 Idss 26.5 10.5 18 105-255 15 Up to 45 EPA060B/EPA060BV 0.3x600 350x350 60 8V, 0.5 Idss 26.5 10/11.5 18 110-250 15 Up to 40/45 V: Via-hole EPA080A 0.3x800 510x340 50 8V, 0.5 Idss 27.5 9.5 18 130-320 15 Up to 35 EPA090A 0.3x900 660x320 37.5 8V, 0.5 Idss 28.0 10.0 18 160-380 15 Up to 40 EPA120A 0.3x1200 670x340 50 8V, 0.5 Idss 29.5 9.5 18 220-500 15 Up to 30 EPA120B/EPA120BV 0.3x1200 550x350 60 8V, 0.5 Idss 29.5 9/10.5 18 220-500 15 Up to 30/40 V: Via-hole EPA120E 0.3x1200 830x320 37.5 8V, 0.5 Idss 29.5 9.5 18 210-510 15 Up to 40 EPA160A 0.3x1600 840x340 50 8V, 0.5 Idss 31.0 8.5 18 290-660 15 Up to 30 EPA160B 0.3x1600 540x370 80 8V, 0.5 Idss 31.0 5.5 18 290-660 15 Up to 26 EPA240B/EPA240BV 0.3x2400 960x350 60 8V, 0.5 Idss 32.5 8/9.5 18 440-940 15 Up to 26/30 V: Via-hole EPA480B/EPA480BV*** 0.4x4800 960x420 120 8V, 0.5 Idss 35.5 7.5/12 12 880-1880 15 Up to 18/30 V: Via-hole EPA240D 0.4x2400 410x620 240 8V, 0.5 Idss 33.0 20.0 2 440-940 15 Up to 15 EPA480C 0.4x4800 680x620 240 8V, 0.5 Idss 36.0 19.0 2 880-1880 15 Up to 12 EPA720A*** 0.4x7200 940x620 240 8V, 0.5 Idss 37.5 19.0 2 1320-2820 15 Up to 10 EPA960B*** 0.4x9600 1210x620 240 8V, 0.5 Idss 38.5 18.5 2 1760-3760 15 Up to 10 EPA1200A*** 0.4x12000 1470x620 240 8V, 0.5 Idss 39.5 18.0 2 2200-4700 15 Up to 10 B.) Non-hermetic Low Cost 70 mils Packages: EPA018A-70 0.3x180 - - 6V, 0.5 Idss 20.0 11.0 18 30-80 15 Up to 30.75 NF@12GHz EPA025A-70 0.3x250 - - 6V, 0.5 Idss 21.5 8.0 18 40-105 15 Up to 26 EPA040A-70 0.3x400 - - 6V, 0.5 Idss 23.5 7.0 18 70-160 15 Up to 26 EPA060B-70 0.3x600 - - 6V, 0.5 Idss 25.5 9.0 12 110-250 15 Up to 20 0.4,NF;28/31m,IP3@2GHz EPA080A-70 0.3x800 - - 5V, 0.5 Idss 25.5 7.0 12 130-320 15 Up to 20 C.) Hermetic 100 mils Ceramic Flange Packages: EPA080A-100F 0.3x800-50 8V, 0.5 Idss 27.5 8.5 12 130-320 15 Up to 18 EPA120B-100F 0.3x1200-60 8V, 0.5 Idss 29.5 7.0 12 220-500 15 Up to 18 EPA160B-100F 0.3x1600-80 8V, 0.5 Idss 31.0 5.5 12 290-660 15 Up to 16 EPA240B-100F 0.3x2400-60 8V, 0.5 Idss 32.5 5.5 12 440-940 15 Up to 15 D.) Surface Mount Plastic Packages: EPA018A-SOT23 0.3x180-30 6V, 30mA 20.0 17.0 2 30-80 15 Up to 10 0.7,NF;27m,IP3@2GHz EPA240D-SOT89 0.4x2400-240 8V, 350mA 33.0 14.0 2 440-940 15 Up to 8 0.4,NF;38/40m,IP3@2GHz EPA480C-SOT89 0.4x4800-240 8V, 750mA 36.0 13.0 2 880-1880 15 Up to 6 0.5,NF;41/43m,IP3@2GHz Note: *: Typical Values **: Typical Values measured at Ig=1mA/mm ***: 25um GaAs + 25um PHS(Plated Gold Heat-Sink)

(High Efficiency Heterojunction Power FETs ) Excelics Filtronic Fujitsu Celeritek HP Stanford NEC Toshiba EPA018A LPD200/LP7612 FLR016XP/XV CF004-03 EPA025A LP7612 FLR016XP/XV CF001-03 JS8892-AS EPA040A LP6836 FLR026XP/XV CF003-03 JS8893-AS EPA060B/BV LP6872/LP750 CF003-03 NE1280100 JS8894-AS EPA080A LP6872/LP750 FLR056XV EPA090A LP6872/LP750 FLR056XV EPA120B/BV NE1280200 EPA160A LP1500 FLR106XV EPA160B LP1500 FLR106XV EPA240B/BV LP3000 FLR106XV NE1280400 EPA018A-70 LPD200/LP7612-70 SPF-2076 EPA025A-70 LPD200/LP7612-70 SPF-2076 EPA040A-70 LP6876-70 ATF35143 EPA060B-70 LP6872/LP750-70 CFB0301 ATF34143 NE34018 EPA080A-70 LP6872/LP750-70 ATF34143 EPA018A-SOT23 LP7612-SOT23 ATF36163 EPA240D-SOT89 LP1500/3000-SOT89 ATF33143 EPA480C-SOT89 LP3000-SOT89

EXCELICS PRODUCT LIST-III (Low Distortion GaAs Power FETs) DEVICE TYPE SIZE CHIP SIZE W(Gate)/Finger Bias P-1* G-1* Freq. Idss BVgd** Freq. Range Remark um 2 um 2 um m GHz ma V GHz A.) Chips: EFA018A 0.3x180 320x290 30 6V, 0.5 Idss 18.5 9.5 18 25-80 15 Up to 55 1.1 NF@12GHz EFA025A 0.3x250 420x260 62.5 8V, 0.5 Idss 21.0 11.0 12 35-105 15 Up to 30 EFA025AL 0.3x250 420x260 62.5 8V, 0.5 Idss 20.0 11.5 12 20-65 15 Up to 30 EFA040A 0.3x400 350x340 50 8V, 0.5 Idss 23.0 10.5 12 60-160 15 Up to 30 EFA060B/EFA060BV 0.3x600 350x350 60 8V, 0.5 Idss 25.0 10.5/12.0 12 100-240 15 Up to 30/30 V: Via-hole EFC060B 0.3x600 350x350 60 10V, 0.5 Idss 25.0 10.5 12 80-180 20 Up to 30 EFA080A 0.3x800 510x340 50 8V, 0.5 Idss 26.0 10.0 12 130-300 15 Up to 30 EFA120A 0.3x1200 670x340 50 8V, 0.5 Idss 28.0 9.5 12 200-440 15 Up to 26 EFA120B/EFA120BV 0.3x1200 550x350 60 8V, 0.5 Idss 28.0 9.5/11.5 12 200-440 15 Up to 23/30 V: Via-hole EFC120B 0.3x1200 550x350 60 10V, 0.5 Idss 28.0 9.5 12 160-360 20 Up to 23 EFA160A 0.3x1600 840x340 50 8V, 0.5 Idss 29.0 9.0 12 260-600 15 Up to 26 EFA240B/EFA240BV 0.3x2400 960x350 60 8V, 0.5 Idss 31.0 8.5/10.5 12 400-880 15 Up to 23/30 V: Via-hole EFC240B 0.3x2400 960x350 60 10V, 0.5 Idss 31.0 8.5 12 320-720 20 Up to 23 EFA480B*** 0.3x4800 960x420 120 8V, 0.5 Idss 34.0 6.0 12 800-1760 15 Up to 15 EFA240D 0.5x2400 410x620 240 8V, 0.5 Idss 31.0 18.5 2 400-880 15 Up to 12 EFC240D 0.3x2400 410x620 240 10V, 0.5 Idss 31.0 18.5 2 320-720 20 Up to 12 EFA480C 0.5x4800 680x620 240 8V, 0.5 Idss 34.0 18.0 2 800-1760 15 Up to 10 EFC480C 0.5x4800 680x620 240 10V, 0.5 Idss 33.5 18.0 2 640-1440 20 Up to 10 EFA720A*** 0.5x7200 940x620 240 8V, 0.5 Idss 35.5 17.5 2 1200-2640 15 Up to 10 EFA960B*** 0.5x9600 1210x620 240 8V, 0.5 Idss 36.5 16.5 2 1600-3520 15 Up to 10 EFA1200A*** 0.5x12000 1470x620 240 8V, 0.5 Idss 37.5 16.0 2 2000-4400 15 Up to 10 B.) Non-hermetic Low Cost 70 mils Ceramic Packages: EFA018A-70 0.3x180-30 6V, 0.5 Idss 18.5 10.5 12 25-80 15 Up to 30 1.1 NF@12GHz EFA025A-70 0.3x250-62.5 6V, 0.5 Idss 20.0 10.0 12 35-105 15 Up to 26 EFA040A-70 0.3x400-50 6V, 0.5 Idss 22.0 8.0 12 60-160 15 Up to 26 EFA060B-70 0.3x600-60 6V, 0.5 Idss 24.0 7.5 12 100-240 15 Up to 23 0.7,NF;26/38m,IP3@2GHz EFA080A-70 0.3x800-50 5V, 0.5 Idss 23.5 7.0 12 130-300 15 Up to 18 C.) Hermetic 100 mils Ceramic Flange Packages: EFA060B-100F 0.3x800-50 8V, 0.5 Idss 25.0 8.0 12 100-240 15 Up to 18 Also available EFC060B-100F EFA080A-100F 0.3x800-50 8V, 0.5 Idss 26.0 7.5 12 130-300 15 Up to 18 EFA120B-100F 0.3x1200-60 8V, 0.5 Idss 28.0 6.0 12 200-440 15 Up to 16 Also available EFC120B-100F EFA240B-100F 0.3x2400-60 8V, 0.5 Idss 31.0 7.0 8 400-880 15 Up to 12 Also available EFC240B-100F D.) Surface Mount Plastic Packages: EFA240D-SOT89 0.5x2400-240 7V, 350mA 31.0 13.0 2 440-880 15 Up to 6 0.7,NF;36/48m,IP3@2GHz EFA480C-SOT89 0.5x4800-240 7V, 750mA 34.0 12.0 2 880-1760 15 Up to 5 0.8,NF;39/48m,IP3@2GHz Note: + : IP3 is typical 13 higher than P-1 *: Typical Values **: Typical Values measured at Ig=1mA/mm ***: 25um GaAs + 25um PHS(Plated Gold Heat-Sink)

(Low Distortion GaAs Power FETs) Excelics MWT Mitsubishi Celeritek NEC Fujitsu Stanford HP Toshiba EFA018A MWT-4 MGFC1403/1423,25 CF004-01/-02 NE700/710/760 FLR016/FLK017 EFA025A/AL MWT-7/-3 MGFC1403/1423,25 CF001-01/-02 NE700/710/760 FLK017/FSX017 ATF-13100/-26100 JS8818A/8834 /FLR016 /8850A-AS EFA040A CF003-01/-02 NE900000 FSX057 EFA/EFC060B MWT-2/-15 MGFC1801/2407 CF003-01/-02 FLK027/FSX027 ATF-10100/-25100 JS8835/8851-AS /BV /FLR026 /-21100 EFA080A MWT-9 or NE900100 ATF-46100 MWT-6/-12/-16 CF015-11 EFA120A MWT-8/-13 MGFC2415 CF005-01 NE800100 FLK057/FLR056 JS8836/8853-AS /FLC087 EFA/EFC120B MWT-8/-13 MGFC2415 CF005-01 NE800100 FLK057/FLK056 ATF-45100/-46100 JS8836/8853-AS /BV /FLC087 EFA/EFC120D MGFC0904 EFA160A MGFC2415 NE900200 JS8836/8853-AS EFA160B MGFC2415 NE900200 JS8836/8853-AS EFA/EFC240B/BV MWT-11 MGFC2430/2445 CF010-01 FLK107/FLR106 ATF-44100/-45100 JS8837A/8855-AS EFA/EFC240D FLC157 JS8837A/8835-AS EFA480B/BV NE800400 FLK207/FLX257 JS8838A/8856-AS EFA480C MGFC0905 NE800400 FLC307 JS8838A/8856-AS EFA720A FLC307 JS8820-AS EFA018A-70 Same as below CFA/CFB0101 NE76084 EFA025A-70 MGF1303B,23/1403 CFA/CFB0101 NE76084 FSX017LG ATF-13036/-13136 /1903B,23/1423,25 /-13336/-13736 EFA025A-85 ATF13786/-21186 EFA040A-70 NE76184 ATF21186 EFA060B-70 MGF1601/1801 CFC0301 FSU02LG ATF-10136/-10236 /10736/-25735 EFA/EFC060B-100F MGF2407A CFC0301 FSX027WF/FLK027WG EFA080A-100F NE900275 FLK057WG ATF46101 EFA/EFC120B-100F MGF2415A FLC057WG/097WF ATF45101/46101 EFA/EFC240B-100F MGF2430A/2445 FLC107WG/167WF ATF44101/45101 EFA/EFC120D-SOT89 SHF0189 EFA/EFC240D-SOT89 SHF0289 EFA/EFC480C-SOT89 SHF0589

EXCELICS PRODUCT LIST-IV & V (Internally Matched Power FETs and MMICs) Part number Op. Freq. Size P-1* G-1* IP3* PAE* Bias Mea'd. Freq. Remark GHz um2 m m % V/mA GHz IV.) INTERNALLY-MATCHED POWER FETs : EIA/EIB1011-2P** 10.7-11.7 Flange Package 33.5/33 9.5/8.5 40/46 30/25 8/0.5-0.6Idss 10.7-11.7 EIA/EIB1011-4P** 10.7-11.7 Flange Package 36.5/35.5 9/8 43/49 30/25 8/0.5-0.6Idss 10.7-11.7 EIA/EIB1213-2P** 12.75-13.25 Flange Package 33.5/33 9.5/8.5 40/46 30/25 8/0.5-0.6Idss 12.75-13.25 EIA/EIB1213-4P** 12.75-13.25 Flange Package 36.5/35.5 9.5/8.5 43/49 30/25 8/0.5-0.6Idss 12.75-13.25 EIA/EIB1314-2P** 13.75-14.5 Flange Package 33.5/33 9/8 40/46 30/25 8/0.5-0.6Idss 13.75-14.5 EIA/EIB1314-4P** 13.75-14.5 Flange Package 36.5/36 8.5/7.5 43/49 27/22 8/0.5-0.6Idss 13.75-14.5 EIA/EIB1414-2P** 14.0-14.5 Flange Package 33.5/33 9/8 40/46 30/25 8/0.5-0.6Idss 14.0-14.5 EIA/EIB1414-4P** 14.0-14.5 Flange Package 36.5/35.5 8.5/7.5 43/49 27/22 8/0.5-0.6Idss 14.0-14.5 EIA/EIB1415-2P** 14.4-15.35 Flange Package 33/32.5 8.5/7.5 40/46 27/22 8/0.5-0.6Idss 14.4-15.35 EIA/EIB1415-4P** 14.4-15.35 Flange Package 36/35.5 8/7 43/49 27/22 8/0.5-0.6Idss 14.4-15.35 EIA1616-8P** 16.2-16.4 Flange Package 39 6-20 8/0.5Idss 16.2-16.4 EIA/EIB1718A-1P** 17.3-18.1 Flange Package 30.5/29.5 7.5/6 37/43 30/25 8/0.5-0.6Idss 17.3-18.1 EIA/EIB1718A-2P** 17.3-18.1 Flange Package 33.5/32.5 7.5/5.5 40 25/20 8/0.5-0.6Idss 17.3-18.1 EIA/EIB1718-1P** 17.7-18.7 Flange Package 30.0/29.5 6.5/5.5 37/43 25/20 8/0.5-0.6Idss 17.7-18.7 EIA/EIB1718-2P** 17.7-18.7 Flange Package 33/32.5 6.0/5.0 40/46 25/20 8/0.5-0.6Idss 17.7-18.7 EIA/EIB1818-1P** 18.15-18.75 Flange Package 30.0/29.5 6.5/5.5 37/43 25/20 8/0.5-0.6Idss 18.15-18.75 EIA/EIB1818-2P** 18.15-18.75 Flange Package 33.0/32.5 6.0/5.0 40/46 25/20 8/0.5-0.6Idss 18.15-18.75 EIA/EIB1819-1P** 18.7-19.7 Flange Package 30.0/29.5 6.5/5.5 37/43 25/20 8/0.5-0.6Idss 18.7-19.7 EIA/EIB1819-2P** 18.7-19.7 Flange Package 33.0/32.5 6.0/5.0 40/46 25/20 8/0.5-0.6Idss 18.7-19.7 P-1 * S.S.Gain * VSWR * VSWR * V.) MMICs: m Input Output EMA302B 22-26 900X1020 28 15 2.5:1 # 3.0:1 # 6/0.5Idss 22-26 2-stage PA EMA205B 9-16 2000X1060 18 15 1.5:1 2.0:1 5/160 9-16 2-stage Amp. (NF=4), Eng. Sampling. EMA406C 26-32 2500X1060 20 21 2.0:1 3.0:1 5/140 26-32 3-stage Amp.(NF=6), Eng. Sampling. ConV.Loss LO drive P-1 (in) m m EMA407A RF:20-32 2500X1060 11 8 6-5/160 RF:20-32 Sub-harmonic Mixer with LO Amp. (LO:10-15, IF: DC-5) Eng. Sampling. Note: * : Typical Values **: Non-hermetic Metal Flange Packages. Also available in open modules with 0.5-1 higher in G-1 and 0.5m lower in P-1. # : External matching required with application circuits Excelics Semiconductor, Inc., 2908 Scott Blvd., CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

(Internally Matched Power FETs & MMICs ) IV-Internally Matched Power FETs: Excelics NEC Fujitsu Mitsubishi Toshiba EIA/EIB1011-2M (-2P) NEZ1011-2E FLM1011-2 TIM1011-2 EIA/EIB1011-4M (-4P) FLM1011-3F/-4F MGFX36V0717 TIM1011-4/-4L EIA/EIB1213-2M (-2P) TIM1213-2 EIA/EIB1213-4M (-4P) FLM1213-4F MGFX35V2732 TIM1213-4/-4L EIA/EIB1414-1M (-1P) MGFX30V4045 EIA/EIB1414-2M (-2P) NEZ1414-2E FLM1414-2 MGFX33V4045 TIM1414-2 EIA/EIB1414-4M (-4P) NEZ1414-4E FLM1414-3F/-4F MGFX35/37V4045 TIM1414-4/-4L FLM1314-3F EIA/EIB1415-2M (-2P) TIM1415-2 EIA/EIB1415-4M (-4P) FLM1415-3F TIM1415-4/-4L V-MMICs * : Excelics HP UMS Triquint Toshiba Filtronic EMA302B CHA5093 TGA9070 EMA205B EMA406C HMMC5032/5040 CHA3093 TGA1081 JS9P10-AS LMA441/442/443 EMA407A EMA501X HMMC5034/5040 CHA3093 TG A1071 JS9P03-AS LMA444 Note: * : Bandwidth & Gain can be different.

NEW PRODUCT RELEASE 5/24/2000 Part Number Op. Freq. Size P-1 G-1 IP3 NF Bias Mea'd. Freq Eng. Product'n Remark GHz um 2 m m V/mA GHz Sample A.) DISCRETE POWER FETs: EPA120D DC-18 410x560 30.0 9.0 - - 8/0.5Idss 12 Now Now EFA120D DC-15 410x560 28.0 8.0 - - 8/0.5Idss 12 Now Now EFC120D DC-15 410x560 28.0 7.5 - - 10/0.5Idss 12 Now Now EPA120D-SOT89 DC-6 SOT89 30.0 16.0 37 0.5* 8/0.5Idss 2 6/00 7/00 EFA120D-SOT89 DC-4 SOT89 28.0 15.0 45 0.8* 7/170 2 6/00 7/00 EFC120D-SOT89 DC-4 SOT89 28.0 15.0 45 0.8* 9/150 2 6/00 7/00 EFC240D-SOT89 DC-4 SOT89 31.0 13.0 48 0.8** 9/300 2 6/00 7/00 EFA025A-85 DC-12 85mil u-x Plastic 20.0 17.0 30-6/40 2 5/00 7/00 EPA060B-85 DC-12 85mil u-x Plastic 25.0 19.0 31-5/90 2 6/00 7/00 B.) INTERNALLY-MATCHED POWER FETs : PAE(%) EIA2021-2P + 20.8-21.4 Flange Package 33 5.5 40 25/20 8/0.5-0.6Idss 20.8-21.4 6/00 7/00 P-1 S.S.Gain VSWR VSWR C.) MMICs m Input Ouput EMA103X 7.0-8.5 2000X1760 33 15 2.0:1 3.0:1 # 8/0.5Idss 7.0-8.5 7/00 9/00 2-stage PA (low IMD) EMA104X 5.5-7.0 2000X1760 33 15 2.0:1 3.0:1 # 8/0.5Idss 5.5-7.0 7/00 9/00 2-stage PA (low IMD) EMA105X 4.0-5.5 2000X1760 33 15 2.0:1 3.0:1 # 8/0.5Idss 4.0-5.5 7/00 9/00 2-stage PA (low IMD) EMA204X 17-20 3000X1500 30 15 2.5:1 2.5:1 8/0.5Idss 17-20 7/00 9/00 3-stage PA (low IMD) EMA303X 17-27 2500X1060 20 22 2.0:1 3.0:1 5/130 17-27 7/00 9/00 3-stage Amp. EMA501X 37-41 2000X1060 20 22 2.0:1 3.0:1 5/120 37-41 7/00 9/00 3-stage Amp. D.) DISCRETE POWER FETs WITH VIA-HOLE: For most EFA, EFC, EPA series power FETs (Consult factory for details) Now Now E.) DISCRETE POWER FETS IN Hermetic 100MIL/170MIL Metal FLANGE PACKAGES: For most EFA, EFC, EPA series power FETs (Consult factory for details) Now Now Note: All parameters are typical and preliminary + : Non-hermetic Metal Flange Packages. *: measured at 5V/75mA **: measured at 5V/150mA # : External matching required and application circuit supplied

Device Type Bias Condition Frequency N.F. Ga (Typical) (Typical) A.) Power FETs EPA080A 6V/25% Idss 12GHz 1.20 9.5 EPA060B 6V/25% Idss 12GHz 1.15 10.0 EPA040A 6V/25% Idss 12GHz 1.05 10.5 EPA025A 2V/15mA 12GHz 0.85 11.5 3V/10mA 12GHz 0.85 11.0 3V/15mA 12GHz 0.85 11.5 3V/25mA 12GHz 1.00 12.0 3V/35mA 12GHz 1.30 12.5 EPA018A 2V/15mA 12GHz 0.75 12.5 EFA018A 2V/15mA 12GHz 1.10 10.5 EPA080A-70 6V/25% Idss 12GHz 1.80 8.0 EPA060B-70 6V/25% Idss 12GHz 1.70 8.5 EPA040A-70 6V/25% Idss 12GHz 1.25 9.5 EPA025A-70 2V/15mA 12GHz 0.85 11.0 EPA018A-70 2V/15mA 12GHz 0.75 12.5 EFA018A-70 2V/15mA 12GHz 1.10 10.5 B.) Low Noise FETs EPB025A 2V/15mA 12GHz 0.80 11.0 EPB018A5 2V/15mA 12GHz 0.50 13.0 EPB018A7 2V/15mA 12GHz 0.65 12.5 EPB018A9 2V/15mA 12GHz 0.95 12.0 EPB025A-70 2V/15mA 12GHz 0.80 10.5 EPB018A5-70 2V/15mA 12GHz 0.50 13.0 EPB018A7-70 2V/15mA 12GHz 0.65 12.5 EPB018A9-70 2V/15mA 12GHz 0.95 11.5

Quick Reference Guide for 2 GHz Application Device Type Bias 6/1/1999 P-1 NF Ga G-1 IP3 Idss BVgd** m m ma V A) Chips: EPB018A5 2V/15mA 15 + 0.4 20 20 + 15-80 6 EPB018A7 2V/15mA 15 + 0.5 19 19 + 15-80 6 EPB018A9 2V/15mA 15 + 0.6 19 19 + 15-80 6 EPB025A 2V/15mA 15 + 0.5 19 19 + 20-80 5 EFA018A 6V/30mA 18 1.1 17 17 28 25-75 15 EFA025A 6V/40mA 20 1.2 17 17 30 55-100 15 EFA060B 6V/80mA 23 1.3 17 17 33 100-240 15 EPA018A 6V/30mA 20 0.7 20 19 27 30-75 15 EPA025A 6V/40mA 21 0.8 20 19 28 40-100 15 EPA060B 5V/50mA 23 0.4 20 19 28 110-250 15 EPA080A 5V/60mA 24 0.4 20 19 29 130-320 15 B) Non-hermetic packages: EPB018A7-70 2V/15mA 15 + 0.5 19 14 + 15-80 6 EPB018A9-70 2V/15mA 15 + 0.6 18 14 + 15-80 6 EPB025A-70 2V/15mA 15 + 0.4 19 14 + 20-80 5 EFA018A-70 6V/30mA 18 1.2 17 17 28 25-75 15 EFA025A-70 6V/40mA 20 1.3 17 17 30 55-100 15 EFA060B-70 5V/50mA 23 0.7 17 17 26 100-240 5V/100mA 23 1.4 17 17 38 15 EFA240D-SOT89 5V/150mA 28 0.7 13 13 36 400-880 5-7V/350mA 29-31 1.2 13 13 48 15 EFA480C-SOT89 5V/300mA 31 0.8 12 12 39 800-1760 5-7V/750mA 32-34 2.0 12 12 48 15 EPA018A-70 6V/30mA 20 0.8 20 19 27 30-75 15 EPA018A-SOT23 2V/15mA 0.7 16 6V/30mA 20 0.9 17 17 27 30-75 15 EPA025A-70 6V/40mA 21 0.9 19 18 28 40-100 15 EPA060B-70 5V/50mA 24 0.4 20 18 28 110-250 5V/90mA 25 0.6 20 19 31 15 EPA240D-SOT89 5V/150mA 30 0.4 14 12 38 440-940 5-8V/350mA 31-33 0.8 14 14 40 15 EPA480C-SOT89 5V/300mA 32 0.5 13 12 41 880-1880 5-8V/750mA 33-36 1.2 13 13 43 15 Note: All parameters are typical and preliminary + 3V/25mA, *2V/15mA, **EPB @Igd= 10uA, rest @1mA/mm

Small Signal Model Element Values High Efficiency Heterojunction Power FETs Parameter L G R G C GS R I R S L S C GD R DS C DS R D L D G M τ C PG C PD Units nh Ω pf Ω Ω nh pf Ω pf Ω nh ms ps pf pf Device: EPA018A 0.18 0.50 0.30 0.29 0.13 0.057 0.021 680 0.011 1.0 0.22 55 2.5 0.06 0.06 EPA025A 0.10 1.8 0.33 1.9 0.83 0.071 0.014 280 0.044 1.38 0.18 84 2.0 0.17 0.17 EPA030C 0.20 0.55 0.59 1.6 0.69 0.041 0.024 300 0.025 0.41 0.30 110 2.0 0.084 0.084 EPA040A 0.20 0.74 0.67 1.2 0.52 0.037 0.031 210 0.043 0.55 0.30 140 2.0 0.084 0.084 EPA060A 0.10 0.28 1.2 0.80 0.35 0.028 0.046 120 0.044 0.21 0.15 250 2.0 0.17 0.17 EPA060B 0.20 0.71 1.0 0.80 0.35 0.035 0.044 160 0.064 0.53 0.33 190 2.0 0.084 0.084 EPA080A 0.10 0.37 1.4 0.60 0.26 0.028 0.058 96 0.097 0.28 0.18 260 2.0 0.17 0.17 EPA090A 0.067 0.18 1.6 0.53 0.23 0.022 0.060 73 0.078 0.14 0.089 350 2.0 0.25 0.25 EPA120A 0.067 0.25 1.9 0.40 0.17 0.020 0.085 60 0.16 0.18 0.094 400 2.0 0.25 0.25 EPA120B 0.10 0.35 2.1 0.40 0.17 0.023 0.088 75 0.15 0.26 0.13 380 2.0 0.17 0.17 EPA120E 0.050 0.14 2.1 0.40 0.17 0.018 0.078 52 0.12 0.10 0.045 460 2.0 0.34 0.34 EPA160A 0.050 0.18 2.4 0.30 0.13 0.016 0.11 37 0.26 0.14 0.084 570 2.0 0.34 0.34 EPA160B 0.10 0.47 3.8 0.30 0.13 0.022 0.15 83 0.21 0.35 0.09 810 2.0 0.17 0.17 EPA240B 0.050 0.18 3.3 0.20 0.087 0.050 0.17 27 0.47 0.13 0.074 740 2.0 0.34 0.34 EPA240D 0.28 1.2 4.3 0.20 0.27 0.12 0.14 95 0.30 0.067 0.49 350 4.0 0.25 0.25 EPA480A 0.025 0.088 6.7 0.10 0.043 0.010 0.34 14 0.94 0.067 0.046 1300 2.0 0.67 0.67 EPA480B 0.050 0.35 6.7 0.10 0.043 0.020 0.34 14 0.62 0.26 0.93 1300 2.0 0.37 0.37 EPA480C 0.14 0.61 8.1 0.10 0.13 0.080 0.28 47 0.60 1.1 0.25 670 4.0 0.50 0.50 EPA720A 0.090 0.40 12 0.067 0.090 0.060 0.42 32 0.90 0.70 0.16 1000 4.0 0.76 0.76 EPA960B 0.070 0.31 16 0.050 0.070 0.048 0.56 24 1.2 0.53 0.12 1400 4.0 1.0 1.0 EPA1200A 0.056 0.24 20 0.040 0.050 0.040 0.72 19 1.5 0.42 0.10 1700 4.0 1.3 1.3 High Gain Heterojunction Low Noise FET EPB025A 0.10 1.8 0.14 1.9 0.83 0.061 0.060 150 0.060 1.4 0.12 78 2.0 0.17 0.17

Small Signal Model Element Values Low Distortion GaAs Power FETs Parameter L G R G C GS R I R S L S C GD R DS C DS R D L D G M τ C PG C PD Units nh Ω pf Ω Ω nh pf Ω pf Ω nh ms ps pf pf Device: EFA018A 0.23 0.50 0.17 0.53 0.23 0.063 0.016 560 0.006 1 0.22 32 2.4 0.05 0.05 EFA025A 0.10 1.8 0.27 3.3 2.1 0.41 0.025 250 0.040 0.96 0.18 60 3.0 0.08 0.08 EFA040A 0.20 0.74 0.41 1.3 0.83 0.050 0.031 200 0.040 0.39 0.30 81 3.0 0.084 0.084 EFA060B 0.20 0.71 0.55 1.3 0.80 0.037 0.032 170 0.060 0.37 0.30 90 3.0 0.084 0.084 EFA080A 0.10 0.37 0.80 0.65 0.42 0.034 0.058 97 0.069 0.19 0.16 140 3.0 0.17 0.17 EFA120A 0.067 0.25 1.1 0.43 0.28 0.26 0.082 160 0.13 0.13 0.12 210 3.0 0.25 0.25 EFA120B 0.10 0.35 1.4 0.63 0.40 0.026 0.077 79 0.11 0.19 0.15 170 3.0 0.17 0.17 EFA160A 0.050 0.18 1.9 0.33 0.21 0.021 0.10 51 0.16 0.096 0.067 270 3.0 0.34 0.34 EFA240B 0.050 0.18 2.2 0.31 0.20 0.016 0.15 35 0.32 0.093 0.044 340 3.0 0.34 0.34 EFA240D 0.28 0.50 3.3 0.60 0.20 0.045 0.20 50 0.36 0.40 0.18 300 5.0 0.25 0.25 EFA480A 0.025 0.088 4.4 0.16 0.10 0.011 0.30 17 0.64 0.046 0.022 640 3.0 0.67 0.67 EFA480B 0.050 0.35 7.2 0.63 0.40 0.016 0.11 24 0.86 0.19 0.093 640 5.0 0.34 0.34 EFA480C 0.14 0.25 6.1 0.30 0.10 0.030 0.40 25 0.72 0.20 0.090 600 5.0 0.50 0.50 EFA720A 0.090 0.17 9.2 0.20 0.067 0.023 0.60 17 1.1 0.13 0.060 900 5.0 0.76 0.76 EFA960B 0.070 0.125 12 0.15 0.050 0.018 0.80 13 1.4 0.10 0.045 1200 5.0 1.0 1.0 EFA1200A 0.056 0.10 15 0.12 0.040 0.015 1.0 10 1.8 0.080 0.036 1500 5.0 1.3 1.3

Large Signal Model Parameters for Curtice-Cubic Model For High Efficiency Heterojunction Power FETs (Curtice-Ettenburg Model) Parameter Units EPA025A EPA040A EPA060B EPA080A EPA120A EPA120B EPA160A EPA240B EPA240D EPA480C EPA720A EPA960B EPA1200A BETA 1/V 0.00206 0.0318 0 0.0318 0.0318 0 0.0318 0 0.0244 0.0244 0.0244 0.0244 0.0244 GAMMA 1/V 0.993 1.81 1.6 1.81 1.81 1.6 1.81 1.6 2.16 2.16 2.16 2.16 2.16 VOUT0 V 3.51 3.95 2 3.95 3.95 2 3.95 2 4.25 4.25 4.25 4.25 4.25 VT0 V -1.3-1 -1-1 -1-1 -1-1 -0.9-0.9-0.9-0.9-0.9 A0 A 0.101 0.143 0.177 0.286 0.429 0.354 0.572 0.708 0.780 1.560 2.34 3.16 3.9 A1 A/V 0.157 0.144 0.16 0.288 0.432 0.32 0.576 0.640 0.840 1.680 2.52 3.36 4.2 A2 A/V2 0.0762-0.096-0.062-0.192-0.288-0.124-0.384-0.248-0.815-1.630-2.45-3.26-4.08 A3 A/V3 0.0117-0.0975-0.049-0.195-0.2925-0.098-0.39-0.196-0.865-1.730-2.60-3.46-4.33 TAU S 3.00E-12 3.00E-12 2.00E-12 3.00E-12 3.00E-12 2.00E-12 3.00E-12 2.00E-12 3.00E-12 3.00E-12 3.00E-12 3.00E-12 3.00E-12 R1 ohm 0 0 1.00E+06 0 0 1.00E+06 0 1.00E+06 0 0 0 0 0 R2 ohm 0 0 0 0 0 0 0 0 0 0 0 0 0 VB0 V 14 14 1.00E+06 14 14 1.00E+06 14 1.00E+06 14 14 14 14 14 VBI V 1 1 0.85 1 1 0.85 1 0.85 1 1 1 1 1 RF ohm 0 0 1.00E+06 0 0 1.00E+06 0 1.00E+06 0 0 0 0 0 IS A 3.30E-14 5.50E-14 1.00E-14 1.10E-13 1.65E-13 1.00E-14 2.20E-13 1.00E-14 3.25E-10 6.50E-10 9.75E-10 1.30E-09 1.63E-09 N - 1.2 1.2 1 1.2 1.2 1 1.2 1 1.2 1.2 1.2 1.2 1.2 RDS ohm 482 358 350 179 119 175 90 88 103 51.5 34.3 26 21 CRF F 1.00E-08 1.00E-08 1.00E-11 1.00E-08 1.00E-08 1.00E-11 1.00E-08 1.00E-11 1.00E-08 1.00E-08 1.00E-08 1.00E-08 1.00E-08 RD ohm 0.96 0.54 0.53 0.27 0.18 0.265 0.135 0.13 0.500 0.250 0.167 0.125 0.100 RG ohm 1.8 0.74 0.71 0.37 0.25 0.355 0.185 0.18 1.200 0.600 0.400 0.300 0.240 RS ohm 2.76 0.52 0.35 0.26 0.17 0.175 0.13 0.09 0.270 0.135 0.090 0.068 0.054 RIN ohm 4.13 0 0.8 0 0 0.4 0 0.2 0 0 0 0 0 CGSO F 6.45E-13 9.80E-13 1.00E-12 1.96E-12 2.94E-12 2.00E-12 3.92E-12 4.00E-12 9.95E-12 1.99E-11 2.99E-11 3.98E-11 4.98E-11 CGDO F 5.18E-14 1.08E-13 4.90E-14 2.16E-13 3.24E-13 9.80E-14 4.32E-13 1.96E-13 3.56E-13 7.12E-13 1.07E-12 1.42E-12 1.78E-12 FC - 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 CDS F 8.70E-14 1.08E-13 6.40E-14 2.16E-13 3.24E-13 1.28E-13 4.32E-13 2.56E-13 3.80E-13 7.60E-13 1.14E-12 1.52E-12 1.90E-12 CGS F 0 0 0 0 0 0 0 0 0 0 0 0 0 CGD F 0 0 0 0 0 0 0 0 0 0 0 0 0 KF4-0 0 0 0 0 0 0 0 0 0 0 0 0 AF - 1 1 1 1 1 1 1 1 1 1 1 1 1 TNOM C 27 27 27 27 27 27 27 27 27 27 27 27 27 XTI 3 3 3 3 3 3 3 3 3 3 3 3 3 EG ev 1.11 1.11 1.11 1.11 1.11 1.11 1.11 1.11 1.11 1.11 1.11 1.11 1.11 VTOTC V/ C 0 0 0 0 0 0 0 0 0 0 0 0 0 BETATCE % C 0 0 0 0 0 0 0 0 0 0 0 0 0 FFE - 1 1 1 1 1 1 1 1 1 1 1 1 1 LD nh 0.18 0.3 0.33 0.18 0.094 0.13 0.084 0.074 0.49 0.25 0.16 0.12 0.1 LS nh 0.071 0.037 0.035 0.028 0.02 0.023 0.016 0.05 0.12 0.08 0.06 0.048 0.04 LG nh 0.1 0.2 0.2 0.1 0.067 0.1 0.05 0.05 0.28 0.14 0.09 0.07 0.056

Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs (Curtice-Ettenburg Model) Parameter Units EFA025A EFA040A EFA060B EFA080A EFA120A EFA120B EFA160A EFA240B EFA240D EFA480C EFA720A EFA960B EFA1200A BETA 1/V 0 0 0 0 0 0 0 0 1.5 1.5 1.5 1.5 1.5 GAMMA 1/V 2.5 2 1.2 2 2 1.2 2 1.2 1.85 1.85 1.85 1.85 1.85 VOUT0 V 2 2 2 2 2 2 2 2 2 2 2 2 2 VT0 V -2-2 -2-2 -2-2 -2-2 -2-2 -2-2 -2 A0 A 0.087 0.1108 0.18 0.2216 0.3324 0.36 0.4432 0.72 0.850 1.700 2.55 3.4 4.25 A1 A/V 0.048 0.067 0.063 0.134 0.201 0.126 0.268 0.252 0.480 0.960 1.44 1.92 2.4 A2 A/V2-0.011-0.0244-0.018-0.0488-0.0732-0.036-0.0976-0.072-0.075-0.150-0.225-0.3-0.375 A3 A/V3-0.0067-0.015-0.0063-0.03-0.045-0.0126-0.06-0.0252-0.046-0.092-0.138-0.184-0.23 TAU S 2.00E-12 2.00E-12 2.00E-12 2.00E-12 2.00E-12 2.00E-12 2.00E-12 2.00E-12 2.00E-12 2.00E-12 2.00E-12 2.00E-12 2.00E-12 R1 ohm 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 R2 ohm 0 0 0 0 0 0 0 0 0 0 0 0 0 VB0 V 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 VBI V 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 RF ohm 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 1.00E+06 IS A 1.00E-14 1.00E-14 1.00E-14 1.00E-14 1.00E-14 1.00E-14 1.00E-14 1.00E-14 1.00E-14 1.00E-14 1.00E-14 1.00E-14 1.00E-14 N - 1 1 1 1 1 1 1 1 1 1 1 1 1 RDS ohm 300 250 350 125 83 175 63 88 90 45 30 23 18 CRF F 1.00E-11 1.00E-11 1.00E-11 1.00E-11 1.00E-11 1.00E-11 1.00E-11 1.00E-11 1.00E-11 1.00E-11 1.00E-11 1.00E-11 1.00E-11 RD ohm 3 0.37 0.37 0.185 0.123 0.185 0.0925 0.0925 0.800 0.400 0.267 0.200 0.160 RG ohm 4 0.71 0.71 0.355 0.237 0.355 0.178 0.178 1.500 0.750 0.500 0.375 0.300 RS ohm 4 0.8 0.8 0.4 0.267 0.4 0.2 0.2 0.500 0.250 0.167 0.125 0.100 RIN ohm 0 0.8 0 0.4 0.267 0 0.2 0 0 0 0 0 0 CGSO F 2.70E-13 4.00E-13 5.50E-13 8.00E-13 1.2E-12 1.10E-12 1.60E-12 2.20E-12 4.00E-12 8.00E-12 1.20E-11 1.60E-11 2.00E-11 CGDO F 2.50E-14 4.20E-14 3.20E-14 8.40E-14 1.26E-13 6.40E-14 1.68E-13 1.28E-13 5.00E-14 1.00E-13 1.50E-13 2.00E-13 2.50E-13 FC - 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 CDS F 6.00E-14 1.10E-13 6.00E-14 2.2E-13 3.3E-13 1.20E-13 4.40E-13 2.40E-13 3.00E-13 6.00E-13 9.00E-13 1.20E-12 1.50E-12 CGS F 0 0 0 0 0 0 0 0 0 0 0 0 0 CGD F 0 0 0 0 0 0 0 0 0 0 0 0 0 KF4-0 0 0 0 0 0 0 0 0 0 0 0 0 AF - 1 1 1 1 1 1 1 1 1 1 1 1 1 TNOM C 27 27 27 27 27 27 27 27 27 27 27 27 27 XTI 3 3 3 3 3 3 3 3 3 3 3 3 3 EG ev 1.11 1.11 1.11 1.11 1.11 1.11 1.11 1.11 1.11 1.11 1.11 1.11 1.11 VTOTC V/ C 0 0 0 0 0 0 0 0 0 0 0 0 0 BETATCE % C 0 0 0 0 0 0 0 0 0 0 0 0 0 FFE - 1 1 1 1 1 1 1 1 1 1 1 1 1 LD nh 0.18 0.3 0.33 0.18 0.094 0.13 0.084 0.074 0.49 0.25 0.16 0.12 0.1 LS nh 0.071 0.037 0.035 0.028 0.02 0.023 0.016 0.05 0.12 0.08 0.06 0.048 0.04 LG nh 0.1 0.2 0.2 0.1 0.067 0.1 0.05 0.05 0.28 0.14 0.09 0.07 0.056

EPB018A5/A7/A9 VERY HIGH fmax: 120GHz TYPICAL 0.50~0.90 NOISE FIGURE AND 12.0~13.0 ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH RELIABILITY Idss SORTED IN 5 ma PER BIN RANGE ELECTRICAL CHARACTERISTICS (T a = 25 O C) Super Low Noise High Gain Heterojunction FET SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT NF Ga P 1 G 1 Noise Figure, f=12ghz EPB018A5 0.50 0.60 EPB018A7 0.65 0.80 Vds=2V, Ids=15mA EPB018A9 0.95 1.20 Associated Gain, f=12ghz EPB018A5 12.0 13.0 EPB018A7 11.5 12.5 Vds=2V, Ids=15mA EPB018A9 11.0 12.0 Output Power at 1 Compression f=12ghz 15.0 Vds=3V, Ids=25mA f=18ghz 15.0 Gain at 1 Compression f=12ghz 15.0 Vds=3V, Ids=25mA f=18ghz 13.0 Idss Saturated Drain Current Vds=2V, Vgs=0V 15 45 80 ma Gm Transconductance Vds=2V, Vgs=0V 50 90 ms Vp Pinch-off Voltage Vds=2V, Ids=1.0mA -0.8-2.5 V BVgd Drain Breakdown Voltage Igd=10uA -3-6 V BVgs Source Breakdown Voltage Igs=10uA -3-6 V ' 6 * 6 Chip Thickness: 75 ± 13 microns All Dimensions In Microns m Rth Thermal Resistance (Au-Sn Eutectic Attach) 185 o C/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 5V 4V Vgs Gate-Source Voltage -3V -2V Ids Drain Current Idss Idss Igsf Forward Gate Current 2mA 0.3mA Pin Input Power 12m @1 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 740mW 625mW

EPB018A5/A7/A9 Super Low Noise High Gain Heterojunction FET EPB018A5 S-PARAMETERS 2V, 15mA FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.987-12.7 6.651 169.6 0.019 81.2 0.504-9.6 2.0 0.972-25.2 6.514 160.5 0.038 73.7 0.497-19.6 3.0 0.954-38.0 6.378 151.5 0.054 66.6 0.482-30.0 4.0 0.930-50.6 6.163 142.4 0.069 59.5 0.462-39.9 5.0 0.900-64.2 5.929 133.0 0.083 51.9 0.428-50.9 6.0 0.876-76.5 5.630 124.6 0.094 44.9 0.403-60.5 7.0 0.854-87.9 5.303 116.7 0.103 38.5 0.378-70.2 8.0 0.832-98.6 4.993 109.3 0.110 32.8 0.353-79.3 9.0 0.815-108.2 4.681 102.6 0.115 27.2 0.332-87.9 10.0 0.800-116.8 4.409 96.5 0.119 22.3 0.313-95.8 11.0 0.788-124.4 4.168 90.7 0.123 17.9 0.298-103.5 12.0 0.779-131.3 3.959 85.3 0.127 13.7 0.286-111.2 13.0 0.767-138.7 3.779 79.9 0.131 9.5 0.277-118.8 14.0 0.759-146.1 3.631 74.5 0.135 5.3 0.269-126.9 15.0 0.747-153.4 3.487 69.1 0.138 1.0 0.262-135.2 16.0 0.742-161.8 3.377 63.1 0.142-3.3 0.259-144.5 17.0 0.736-171.4 3.222 56.8 0.144-8.1 0.258-155.7 18.0 0.737 179.0 3.077 50.5 0.146-12.7 0.254-166.7 19.0 0.741 170.3 2.899 44.7 0.146-16.8 0.252-178.0 20.0 0.746 162.9 2.727 38.9 0.145-20.5 0.253 172.6 21.0 0.755 156.4 2.483 34.1 0.140-24.0 0.278 164.1 22.0 0.766 149.9 2.324 29.5 0.136-26.7 0.284 157.1 23.0 0.773 144.6 2.175 24.9 0.134-29.4 0.285 150.8 24.0 0.783 141.4 2.060 21.1 0.132-31.2 0.294 145.9 25.0 0.787 139.2 1.965 17.3 0.133-32.9 0.300 140.6 26.0 0.784 136.5 1.908 13.7 0.129-34.2 0.309 137.1 27.0 0.784 134.8 1.828 10.2 0.133-36.7 0.317 133.4 28.0 0.775 133.2 1.771 7.3 0.130-38.2 0.321 130.8 29.0 0.772 131.3 1.734 3.5 0.133-40.0 0.337 128.2 30.0 0.764 129.9 1.695 0.1 0.132-42.5 0.343 124.5 31.0 0.755 126.3 1.655-3.9 0.130-45.6 0.362 121.5 32.0 0.753 122.3 1.607-7.9 0.130-48.8 0.376 118.2 33.0 0.740 117.6 1.530-12.0 0.128-52.3 0.398 116.5 34.0 0.743 113.3 1.463-15.7 0.127-56.3 0.416 113.3 35.0 0.752 107.4 1.404-19.5 0.125-60.9 0.437 111.1 36.0 0.779 101.2 1.356-23.1 0.126-64.7 0.455 108.0 37.0 0.814 95.0 1.293-26.9 0.124-72.7 0.474 105.5 38.0 0.850 90.5 1.228-30.9 0.124-77.6 0.490 100.6 39.0 0.872 86.8 1.155-35.2 0.118-83.1 0.496 97.5 40.0 0.880 84.0 1.078-39.5 0.117-87.9 0.498 94.1 EPB018A7 S-PARAMETERS 2V, 15mA FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.987-13.3 6.211 169.5 0.021 80.6 0.675-8.0 2.0 0.972-26.3 6.132 159.7 0.041 73.0 0.661-16.1 3.0 0.951-41.2 5.989 149.8 0.060 65.6 0.638-25.5 4.0 0.931-55.4 5.766 139.8 0.076 56.3 0.599-34.0 5.0 0.905-70.2 5.504 129.7 0.091 48.5 0.550-42.9 6.0 0.880-83.1 5.156 120.6 0.101 40.9 0.501-51.0 7.0 0.860-94.9 4.793 112.3 0.110 34.3 0.456-58.2 8.0 0.840-106.1 4.460 104.8 0.116 28.3 0.425-64.8 9.0 0.819-115.6 4.151 98.2 0.120 22.5 0.400-70.4 10.0 0.802-123.8 3.878 92.2 0.123 18.2 0.381-75.4 11.0 0.784-131.7 3.667 86.5 0.128 14.1 0.372-79.9 12.0 0.768-139.7 3.492 81.1 0.131 10.1 0.366-83.5 13.0 0.757-147.5 3.344 75.8 0.135 5.9 0.359-87.4 14.0 0.744-154.7 3.243 70.3 0.141 1.7 0.343-92.4 15.0 0.736-162.2 3.142 64.6 0.145-2.8 0.319-98.1 16.0 0.735-172.3 3.043 57.8 0.149-7.4 0.296-105.3 17.0 0.736 176.7 2.896 51.0 0.151-12.9 0.271-113.2 18.0 0.750 168.0 2.762 44.3 0.153-17.5 0.235-125.2 19.0 0.766 162.6 2.605 38.3 0.152-21.7 0.197-143.1 20.0 0.776 158.2 2.436 32.2 0.151-25.6 0.172-164.5 21.0 0.790 149.4 2.161 27.0 0.142-28.9 0.197-172.1 22.0 0.807 145.4 2.010 22.4 0.136-31.8 0.201 180.0 23.0 0.811 141.8 1.880 18.4 0.133-33.8 0.214 174.3 24.0 0.816 139.4 1.763 14.7 0.130-35.5 0.223 168.3 25.0 0.822 138.3 1.681 11.7 0.128-36.3 0.226 165.9 26.0 0.822 137.0 1.618 8.8 0.127-37.5 0.238 166.1 27.0 0.809 136.1 1.586 5.8 0.128-39.5 0.254 165.4 28.0 0.801 134.3 1.571 2.4 0.130-39.8 0.270 165.8 29.0 0.776 131.3 1.548-0.9 0.130-41.5 0.270 163.4 30.0 0.772 125.8 1.541-5.3 0.134-44.9 0.276 163.8 31.0 0.746 119.2 1.530-11.0 0.134-49.3 0.295 160.6 32.0 0.716 111.1 1.487-17.0 0.133-54.6 0.307 155.5 33.0 0.696 100.1 1.419-22.8 0.131-61.3 0.308 150.4 34.0 0.707 90.2 1.348-28.4 0.130-67.6 0.315 143.9 35.0 0.734 82.8 1.273-33.3 0.126-74.0 0.334 135.6 36.0 0.777 76.6 1.188-37.8 0.119-79.8 0.348 127.1 37.0 0.836 72.4 1.108-42.4 0.123-86.0 0.365 120.4 38.0 0.884 70.6 1.030-46.5 0.116-93.0 0.377 112.8 39.0 0.925 71.2 0.945-50.5 0.112-99.2 0.394 105.8 40 0 0 932 74 1 0 863-54 6 0 107-103 4 0 417 100 8 Note: The data included 0.7 mils diameter Au bonding wires: 1 gate wire, 15 mils each; 1 drain wire, 20 mils each; 6 source wires, 8 mils each.

EPB018A5/A7/A9 Super Low Noise High Gain Heterojunction FET EPB018A7 Noise Parameters Vds=2V, Ids=15mA Freq Gamma Opt Nfmin (GHz) (MAG) (ANG) () Rn/50 2 0.85 15 0.37 0.24 4 0.72 35 0.43 0.2 6 0.69 43 0.48 0.19 8 0.65 52 0.55 0.18 10 0.64 71 0.61 0.16 12 0.63 79 0.68 0.15 14 0.62 87 0.89 0.14 16 0.6 112 1.1 0.1 18 0.58 131 1.3 0.071 20 0.57 142 1.45 0.055 22 0.56 152 1.69 0.05 24 0.56 169 1.83 0.037 26 0.55-176 2.05 0.045

0LQ /HDGV $OO EPB018A5/A7/A9-70 Super Low Noise High Gain Heterojunction FET NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE TYPICAL 0.50~0.90 NOISE FIGURE AND 11.5~13.0 ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH RELIABILITY ELECTRICAL CHARACTERISTICS (T a = 25 O C) ' 6 6 SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT NF Ga P 1 G 1 All Dimensions In mils. Noise Figure, f=12ghz EPB018A5-70 0.50 0.60 EPB018A7-70 0.65 0.80 Vds=2V, Ids=15mA EPB018A9-70 0.95 1.20 Associated Gain, f=12ghz EPB018A5-70 11.5 13.0 EPB018A7-70 11.0 12.5 Vds=2V, Ids=15mA EPB018A9-70 10.5 11.5 Output Power at 1 Compression f=12ghz 15.0 Vds=3V, Ids=25mA f=18ghz 15.0 Gain at 1 Compression f=12ghz 14.0 Vds=3V, Ids=25mA f=18ghz 11.5 Idss Saturated Drain Current Vds=2V, Vgs=0V 15 45 80 ma * m Gm Transconductance Vds=2V, Vgs=0V 50 90 ms Vp Pinch-off Voltage Vds=2V, Ids=1.0mA -0.8-2.5 V BVgd Drain Breakdown Voltage Igd=10uA -3-6 V BVgs Source Breakdown Voltage Igs=10uA -3-6 V Rth Thermal Resistance 480 * o C/W * Overall Rth depands on case mounting. MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 5V 4V Vgs Gate-Source Voltage -3V -2V Ids Drain Current Idss 60mA Igsf Forward Gate Current 2mA 0.3mA Pin Input Power 12m @1 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 285mW 240mW

EPB018A5/A7/A9-70 Super Low Noise High Gain Heterojunction FET EPB018A5-70 S-PARAMETERS 2V, 15mA FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.983-18.6 6.245 162.2 0.019 78.9 0.530-13.5 2.0 0.944-37.5 5.964 144.3 0.036 65.2 0.507-28.8 3.0 0.896-55.5 5.582 127.7 0.050 53.6 0.485-42.6 4.0 0.849-72.6 5.327 112.4 0.063 43.6 0.464-54.2 5.0 0.797-89.2 5.111 97.6 0.074 33.1 0.421-65.4 6.0 0.747-103.7 4.799 83.4 0.081 23.4 0.370-78.6 7.0 0.691-118.6 4.503 69.9 0.085 13.9 0.344-90.7 8.0 0.642-132.8 4.277 57.0 0.088 4.7 0.303-100.7 9.0 0.600-155.6 4.189 42.7 0.093-5.1 0.271-111.2 10.0 0.567-178.3 4.012 27.8 0.096-16.3 0.228-126.9 11.0 0.534 170.3 3.846 15.5 0.094-26.5 0.193-145.5 12.0 0.515 155.6 3.758 2.9 0.093-33.1 0.177-161.2 13.0 0.555 128.7 3.569-12.5 0.091-44.2 0.137 176.3 14.0 0.596 106.0 3.317-27.1 0.088-55.6 0.114 151.4 15.0 0.592 91.3 3.214-41.3 0.087-66.9 0.141 123.9 16.0 0.597 74.3 3.086-56.8 0.083-81.1 0.158 94.5 17.0 0.619 59.2 2.756-69.5 0.071-90.3 0.134 68.1 18.0 0.670 49.9 2.668-79.4 0.071-97.3 0.136 64.0 19.0 0.668 33.0 2.623-95.4 0.069-115.9 0.169 51.0 20.0 0.708 17.3 2.551-111.1 0.064-131.4 0.172 37.8 21.0 0.757 8.2 2.447-125.1 0.061-144.1 0.159 18.7 22.0 0.743-2.5 2.325-139.4 0.063-159.2 0.135 14.7 23.0 0.726-21.1 2.224-158.5 0.065 179.4 0.115-1.3 24.0 0.747-39.6 2.063-178.1 0.067 158.8 0.102-39.6 25.0 0.709-52.6 2.024 167.9 0.072 144.7 0.136-56.6 26.0 0.683-70.6 2.006 150.2 0.083 132.8 0.117-71.3 EPB018A7-70 S-PARAMETERS 2V, 15mA FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.985-18.9 5.754 162.0 0.021 77.1 0.677-13.7 2.0 0.949-38.2 5.495 143.9 0.040 63.1 0.650-28.9 3.0 0.903-56.2 5.137 127.2 0.055 50.5 0.622-42.7 4.0 0.860-73.6 4.914 111.8 0.067 39.1 0.595-54.1 5.0 0.812-90.4 4.726 96.9 0.079 28.5 0.549-65.4 6.0 0.765-104.9 4.461 82.4 0.086 17.8 0.495-78.6 7.0 0.713-119.9 4.189 68.6 0.092 7.3 0.464-90.5 8.0 0.664-134.3 3.982 55.4 0.093-3.6 0.411-100.6 9.0 0.621-157.1 3.908 40.9 0.096-12.9 0.374-108.6 10.0 0.591-179.4 3.759 25.7 0.098-24.5 0.328-121.7 11.0 0.564 169.0 3.644 12.8 0.099-33.4 0.295-140.0 12.0 0.541 153.2 3.551-0.8 0.098-43.3 0.266-157.6 13.0 0.574 126.2 3.360-16.6 0.096-54.9 0.210-174.2 14.0 0.609 103.6 3.093-31.7 0.090-66.7 0.173 167.6 15.0 0.598 88.8 2.985-46.4 0.090-78.4 0.187 139.8 16.0 0.597 71.4 2.857-62.2 0.085-92.9 0.194 109.8 17.0 0.612 55.7 2.548-75.5 0.072-102.8 0.155 89.8 18.0 0.661 46.6 2.472-85.8 0.076-105.2 0.183 89.7 19.0 0.657 29.0 2.381-102.1 0.076-126.2 0.221 68.8 20.0 0.697 13.2 2.286-118.1 0.071-141.6 0.240 56.1 21.0 0.740 4.4 2.173-131.8 0.068-155.3 0.221 40.9 22.0 0.728-5.8 2.067-145.9 0.070-167.9 0.210 36.8 23.0 0.717-24.4 1.958-164.5 0.071 172.5 0.188 21.8 24.0 0.743-41.8 1.807 176.3 0.071 151.8 0.154-5.5 25.0 0.710-53.5 1.757 161.7 0.075 138.3 0.174-28.1 26.0 0.689-69.1 1.759 145.4 0.084 124.1 0.152-47.5 EPB018A7-70 Noise Parameters Vds=2V, Ids=15mA Freq. Gamma Opt Nfmin (GHz) (MAG) (ANG) () Rn/50 2 0.76 25 0.37 0.26 4 0.65 56 0.43 0.22 6 0.51 84 0.48 0.16 8 0.41 118 0.55 0.11 10 0.26 159 0.61 0.08 12 0.26-144 0.68 0.08 14 0.32-82 0.89 0.18 16 0.40-46 1.10 0.29 18 0.40-26 1.30 0.45 20 0.51 8 1.45 0.55 22 0.41 27 1.69 0.61 24 0.48 75 1.83 0.59 26 0.52 108 2.05 0.40

EPB025A Low Noise High Gain Heterojunction FET TYPICAL 0.8 NOISE FIGURE AND 11.0 ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH RELIABILITY Idss SORTED IN 5mA PER BIN RANGE 40 420 50 104 D D S G G S 59 50 78 48 260 90 ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT NF Ga P 1 G 1 Noise Figure Vds=2V, Ids=15mA Associated Gain Vds=2V, Ids=15mA Output Power at 1 Compression Vds=3V, Ids=25mA Gain at 1 Compression Vds=3V, Ids=25mA f = 12GHz f = 12GHz f=12ghz f=18ghz f=12ghz f=18ghz 10.0 11.0 0.80 1.0 15.0 15.0 13.0 11.0 Idss Saturated Drain Current Vds=2V, Vgs=0V 20 50 80 ma Gm Transconductance Vds=2V, Vgs=0V 50 80 ms Vp Pinch-off Voltage Vds=2V, Ids=1.0mA -1.0-2.5 V BVgd Drain Breakdown Voltage Igd=10uA -3-5 V BVgs Source Breakdown Voltage Igs=10uA -3-5 V m Rth Thermal Resistance (Au-Sn Eutectic Attach) 155 o C/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 5V 3V Vgs Gate-Source Voltage -3V -3V Ids Drain Current Idss Idss Igsf Forward Gate Current 2mA 0.3mA Pin Input Power 12m @ 1 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 880mW 730mW

EPB025A Low Noise High Gain Heterojunction FET S-PARAMETERS 2V, 15mA FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.996-16.0 6.346 166.8 0.028 79.1 0.653-11.5 2.0 0.968-31.7 6.153 155.3 0.054 71.3 0.633-23.4 3.0 0.928-47.3 5.875 143.9 0.076 61.7 0.604-35.0 4.0 0.884-62.7 5.535 132.9 0.095 53.2 0.568-46.3 5.0 0.836-78.0 5.137 122.0 0.109 44.4 0.517-57.9 6.0 0.800-91.3 4.714 112.8 0.118 37.8 0.485-67.7 7.0 0.775-102.9 4.315 104.5 0.125 32.1 0.457-76.6 8.0 0.749-113.2 3.933 97.1 0.129 26.8 0.437-84.2 9.0 0.732-121.7 3.615 90.5 0.131 22.1 0.419-90.4 10.0 0.714-128.3 3.325 85.0 0.131 18.4 0.407-94.7 11.0 0.701-134.6 3.112 79.5 0.133 15.2 0.403-98.8 12.0 0.694-140.2 2.928 74.6 0.135 12.3 0.400-102.2 13.0 0.680-146.4 2.780 69.3 0.137 8.9 0.392-105.8 14.0 0.666-153.4 2.660 64.5 0.139 5.8 0.385-109.1 15.0 0.659-161.2 2.582 59.0 0.143 2.3 0.377-112.9 16.0 0.654-170.0 2.500 52.9 0.147-1.0 0.367-118.7 17.0 0.652 179.4 2.408 46.3 0.151-5.3 0.352-125.3 18.0 0.662 168.5 2.313 39.5 0.154-9.7 0.333-133.9 19.0 0.672 157.8 2.196 32.6 0.155-14.0 0.319-142.6 20.0 0.690 147.9 2.072 25.4 0.155-18.4 0.312-153.7 21.0 0.716 144.2 1.873 20.3 0.149-21.0 0.336-166.1 22.0 0.729 138.6 1.741 15.2 0.145-23.6 0.347-173.4 23.0 0.758 134.9 1.629 10.2 0.144-25.9 0.372-178.6 24.0 0.760 133.3 1.524 6.1 0.140-26.5 0.389 178.0 25.0 0.775 131.2 1.456 2.4 0.137-27.7 0.415 176.2 26.0 0.786 131.9 1.403-0.9 0.137-27.1 0.431 176.0 27.0 0.768 131.4 1.345-3.6 0.139-27.2 0.449 176.4 28.0 0.766 132.0 1.307-6.2 0.140-27.0 0.455 177.4 29.0 0.755 131.6 1.302-9.7 0.143-27.0 0.471 177.2 30.0 0.740 129.3 1.292-13.1 0.147-27.8 0.470 178.1 31.0 0.717 125.8 1.280-17.2 0.150-29.8 0.472 177.2 32.0 0.695 119.5 1.274-22.5 0.150-33.0 0.467 175.7 33.0 0.668 111.8 1.236-28.2 0.148-37.2 0.447 171.3 34.0 0.663 101.3 1.203-34.3 0.144-43.3 0.428 166.4 35.0 0.672 91.2 1.157-40.4 0.139-48.5 0.406 157.1 36.0 0.717 79.6 1.108-46.5 0.134-56.5 0.405 146.8 37.0 0.762 71.7 1.039-53.2 0.128-63.5 0.410 133.6 38.0 0.807 64.5 0.975-59.6 0.121-72.3 0.432 122.7 39.0 0.847 60.0 0.898-65.7 0.112-81.9 0.462 112.1 40.0 0.858 57.7 0.793-70.7 0.107-89.8 0.503 106.4 Note: The data included 0.7 mils diameter Au bonding wires: 2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 4 source wires, 7 mils each.

40 180 Min. (All Leads) 70 EPB025A-70 NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE TYPICAL 0.85 NOISE FIGURE AND 10.5 ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH RELIABILITY ELECTRICAL CHARACTERISTICS (T a = 25 O C) Low Noise High Gain Heterojunction FET SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT NF Ga P 1 G 1 Noise Figure Vds=2V, Ids=15mA Associated Gain Vds=2V, Ids=15mA Output Power at 1 Compression Vds=3V, Ids=25mA Gain at 1 Compression Vds=3V, Ids=25mA f = 12GHz f = 12GHz f=12ghz f=18ghz f=12ghz f=18ghz S 9.5 10.5 D G 0.85 1.0 15.0 15.0 12.0 9.5 Idss Saturated Drain Current Vds=2V, Vgs=0V 20 50 80 ma Gm Transconductance Vds=2V, Vgs=0V 50 80 ms Vp Pinch-off Voltage Vds=2V, Ids=1.0mA -1.0-2.5 V BVgd Drain Breakdown Voltage Igd=10uA -3-5 V BVgs Source Breakdown Voltage Igs=10uA -3-5 V Rth Thermal Resistance 370 * o C/W * Overall Rth depends on case mounting 20 S m 44 19 4 MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 5V 3V Vgs Gate-Source Voltage -3V -3V Ids Drain Current Idss 50mA Igsf Forward Gate Current 2mA 0.3mA Pin Input Power 12m @ 1 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 370mW 310mW

EPB025A-70 Low Noise High Gain Heterojunction FET S-PARAMETERS 2V, 15mA FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.977-21.3 5.991 159.2 0.026 75.1 0.641-16.1 2.0 0.922-42.4 5.602 138.8 0.048 60.3 0.604-33.3 3.0 0.857-61.7 5.110 120.4 0.065 48.3 0.567-48.6 4.0 0.793-79.8 4.758 103.7 0.079 38.2 0.532-61.2 5.0 0.729-97.0 4.445 87.9 0.091 27.6 0.480-73.9 6.0 0.672-111.1 4.087 73.0 0.098 18.2 0.426-88.7 7.0 0.612-125.3 3.757 58.9 0.104 9.1 0.399-101.8 8.0 0.558-138.7 3.494 45.7 0.105 0.3 0.354-113.4 9.0 0.508-160.7 3.354 31.6 0.110-6.9 0.329-123.7 10.0 0.473 178.3 3.169 17.1 0.114-15.8 0.307-139.6 11.0 0.437 168.8 3.014 4.5 0.117-23.9 0.299-159.3 12.0 0.404 154.6 2.898-8.6 0.120-31.1 0.298-177.4 13.0 0.430 127.9 2.734-23.4 0.122-40.9 0.276 165.2 14.0 0.460 105.7 2.535-37.4 0.120-51.0 0.269 149.4 15.0 0.436 91.0 2.424-51.6 0.122-60.3 0.306 130.5 16.0 0.424 73.5 2.311-66.6 0.123-71.4 0.328 108.8 17.0 0.450 59.1 2.084-79.5 0.114-79.0 0.296 96.1 18.0 0.496 49.9 2.021-90.2 0.123-85.3 0.334 92.8 19.0 0.472 30.9 1.938-104.6 0.121-99.1 0.376 76.2 20.0 0.518 15.6 1.884-120.1 0.119-111.5 0.412 62.4 21.0 0.566 8.9 1.792-133.9 0.120-122.4 0.394 51.5 22.0 0.554 0.6 1.713-147.9 0.123-134.0 0.388 46.2 23.0 0.534-18.5 1.639-164.8 0.124-149.4 0.378 29.4 24.0 0.575-35.4 1.557 176.7 0.126-167.0 0.362 8.2 25.0 0.550-43.9 1.513 161.6 0.130-179.0 0.368-4.3 26.0 0.522-57.1 1.516 145.7 0.143 166.3 0.346-15.8

EPA018A High Efficiency Heterojunction Power FET VERY HIGH fmax: 120GHz +20.0m TYPICAL OUTPUT POWER 13.0 TYPICAL POWER GAIN AT 18 GHz TYPICAL 0.75 NOISE FIGURE AND 12.5 ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 5 ma PER BIN RANGE ELECTRICAL CHARACTERISTICS (T a = 25 O C) 50 S 320 60 D G S 70 80 90 68 154 290 Chip Thickness: 75 ± 13 microns All Dimensions In Microns SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE NF Ga Output Power at 1 Compression f=12ghz 18.0 20.0* Vds=6V, Ids=50% Idss f=18ghz 20.0* Gain at 1 Compression f=12ghz 13.0 14.5 Vds=6V, Ids=50% Idss f=18ghz 13.0 Power Added Efficiency at 1 Compression Vds=6V, Ids=50% Idss f=12ghz 48 Noise Figure f=12ghz 0.75 Vds=2V, Ids=15mA Associated Gain f=12ghz 12.5 Vds=2V, Ids=15mA Idss Saturated Drain Current Vds=3V, Vgs=0V 30 55 80 ma Gm Transconductance Vds=3V, Vgs=0V 35 60 ms Vp Pinch-off Voltage Vds=3V, Ids=1.0mA -1.0-2.5 V BVgd Drain Breakdown Voltage Igd=0.5mA -9-15 V BVgs Source Breakdown Voltage Igs=0.5mA -7-14 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 185 * P 1 = 21.5m can be obtained with 8v/50% Idss bias. Consult factory for wafer selection. MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 6V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss Idss Igsf Forward Gate Current 9mA 1.5mA Pin Input Power 16m @3 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 740mW 625mW m % o C/W

EPA018A High Efficiency Heterojunction Power FET S-PARAMETERS 6V, 1/2 Idss FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.980-13.0 4.681 169.2 0.010 77.2 0.837-3.5 2.0 0.969-25.7 4.581 160.2 0.020 71.8 0.830-7.2 3.0 0.953-38.3 4.476 151.2 0.030 67.3 0.819-10.8 4.0 0.933-50.7 4.339 142.0 0.037 61.9 0.803-14.8 5.0 0.908-63.2 4.206 132.9 0.044 54.3 0.783-18.9 6.0 0.888-74.6 4.017 124.3 0.050 48.5 0.765-22.7 7.0 0.868-84.9 3.825 116.2 0.054 42.9 0.748-26.8 8.0 0.850-94.8 3.635 108.5 0.058 37.9 0.734-30.6 9.0 0.833-103.7 3.440 101.2 0.061 32.3 0.720-34.4 10.0 0.815-111.8 3.260 94.4 0.062 28.2 0.708-37.7 11.0 0.807-119.7 3.108 87.9 0.065 23.9 0.700-41.1 12.0 0.793-127.2 2.963 81.8 0.066 20.3 0.691-43.8 13.0 0.785-135.1 2.852 75.6 0.067 16.4 0.683-46.4 14.0 0.775-143.2 2.749 69.6 0.069 12.9 0.676-48.4 15.0 0.768-151.8 2.663 63.4 0.070 9.5 0.664-50.6 16.0 0.763-161.0 2.585 57.1 0.071 6.7 0.655-52.6 17.0 0.762-170.3 2.515 50.6 0.074 3.4 0.641-54.7 18.0 0.757 180.0 2.423 44.1 0.076 0.2 0.626-56.7 19.0 0.765 170.4 2.341 37.4 0.079-2.4 0.604-59.5 20.0 0.767 162.2 2.254 30.8 0.081-6.3 0.587-63.0 21.0 0.780 155.3 2.138 24.4 0.080-8.7 0.563-69.3 22.0 0.791 148.7 2.031 18.3 0.081-12.2 0.547-74.8 23.0 0.795 143.4 1.918 12.1 0.080-14.7 0.541-81.1 24.0 0.804 138.9 1.824 6.4 0.079-15.9 0.543-87.9 25.0 0.811 136.3 1.743 1.5 0.078-16.3 0.553-94.0 26.0 0.807 134.9 1.676-3.1 0.077-17.8 0.564-100.7 27.0 0.817 133.7 1.603-7.8 0.076-17.2 0.580-106.7 28.0 0.816 131.8 1.544-12.8 0.078-16.7 0.592-113.0 29.0 0.806 130.5 1.520-17.2 0.078-16.7 0.611-117.6 30.0 0.804 128.8 1.494-22.0 0.079-17.3 0.618-123.0 31.0 0.797 125.3 1.461-27.2 0.081-20.4 0.622-127.6 32.0 0.795 121.1 1.435-32.1 0.081-20.9 0.615-133.0 33.0 0.785 115.8 1.388-38.3 0.080-25.9 0.609-138.5 34.0 0.787 110.2 1.351-44.9 0.077-27.8 0.592-145.1 35.0 0.813 103.3 1.322-51.4 0.077-29.9 0.585-152.5 36.0 0.830 97.4 1.263-58.0 0.078-34.9 0.578-160.7 37.0 0.865 88.9 1.218-65.3 0.076-38.4 0.587-170.1 38.0 0.886 84.5 1.144-72.1 0.079-43.6 0.599-178.7 39.0 0.897 78.4 1.064-79.8 0.079-51.9 0.625 172.4 40.0 0.905 74.8 0.975-86.4 0.078-60.4 0.651 165.4 S-PARAMETERS 2V, 15mA FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 1.000-11.0 5.013 170.5 0.017 79.9 0.631-6.1 2.0 0.990-21.5 4.947 162.8 0.032 73.8 0.622-12.6 3.0 0.976-32.1 4.862 154.8 0.047 69.2 0.609-19.0 4.0 0.962-42.6 4.759 146.8 0.061 62.5 0.590-25.7 5.0 0.941-53.4 4.643 138.3 0.073 56.0 0.558-33.1 6.0 0.922-63.6 4.479 130.6 0.084 49.9 0.535-39.9 7.0 0.905-73.1 4.298 123.1 0.094 43.9 0.511-46.9 8.0 0.883-82.0 4.112 116.0 0.103 38.2 0.490-53.5 9.0 0.864-90.4 3.938 109.3 0.108 32.9 0.469-60.0 10.0 0.846-97.9 3.753 103.1 0.114 27.6 0.450-65.4 11.0 0.829-105.3 3.615 97.0 0.120 23.1 0.436-70.8 12.0 0.819-112.4 3.472 91.3 0.124 18.8 0.422-75.4 13.0 0.804-120.0 3.360 85.4 0.130 14.1 0.400-80.2 14.0 0.792-128.0 3.274 79.7 0.134 9.6 0.379-84.5 15.0 0.784-136.3 3.181 74.0 0.139 5.0 0.357-89.3 16.0 0.777-145.0 3.116 67.7 0.144 0.6 0.330-95.2 17.0 0.770-155.2 3.019 61.0 0.148-4.3 0.297-102.0 18.0 0.773-165.3 2.932 54.4 0.153-9.5 0.260-111.1 19.0 0.770-175.2 2.813 47.7 0.155-14.3 0.226-121.2 20.0 0.771 175.3 2.696 41.0 0.156-18.8 0.201-135.4 21.0 0.780 169.2 2.466 35.3 0.150-22.9 0.204-156.1 22.0 0.777 163.2 2.327 30.2 0.149-26.0 0.209-168.6 23.0 0.793 157.9 2.206 25.0 0.147-29.1 0.225-177.7 24.0 0.789 154.9 2.096 20.6 0.145-31.6 0.240 176.0 25.0 0.796 151.5 2.025 16.6 0.144-34.3 0.260 172.7 26.0 0.804 149.6 1.928 12.1 0.145-36.0 0.272 169.4 27.0 0.786 147.6 1.868 8.6 0.142-37.7 0.282 168.5 28.0 0.788 146.0 1.811 5.0 0.143-39.3 0.287 166.7 29.0 0.779 144.4 1.790 1.1 0.143-41.4 0.293 164.7 30.0 0.777 140.9 1.758-3.4 0.145-44.5 0.294 162.2 31.0 0.769 137.1 1.723-7.6 0.145-46.8 0.292 157.2 32.0 0.770 131.7 1.683-12.6 0.145-51.5 0.290 151.7 33.0 0.758 126.2 1.606-17.8 0.142-55.4 0.287 143.1 34.0 0.764 120.0 1.541-22.6 0.140-61.1 0.293 134.7 35.0 0.777 114.3 1.497-27.1 0.136-64.6 0.311 122.2 36.0 0.799 107.4 1.414-31.6 0.134-70.1 0.345 114.2 37.0 0.824 101.9 1.339-37.1 0.134-75.6 0.384 104.6 38.0 0.856 97.2 1.277-41.9 0.130-82.7 0.431 98.0 39.0 0.877 92.4 1.196-47.5 0.126-87.6 0.478 93.3 40.0 0.884 89.0 1.100-52.6 0.123-92.6 0.517 91.0 Note: The data included 0.7 mils diameter Au bonding wires: 1 gate wire, 15 mils each; 1 drain wire, 20 mils each; 6 source wires, 8 mils each.

40 180 Min. (All Leads) 70 EPA018A-70 High Efficiency Heterojunction Power FET NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +20.0m TYPICAL OUTPUT POWER 11.0 TYPICAL POWER GAIN AT 18GHz TYPICAL 0.75 NOISE FIGURE AND 12.5 ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY 20 D S G All Dimensions In mils. S 44 19 4 ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE NF Ga Output Power at 1 Compression f=12ghz 18.5 20.0 Vds=6V, Ids=50% Idss f=18ghz 20.0 Gain at 1 Compression f=12ghz 11.0 13.5 Vds=6V, Ids=50% Idss f=18ghz 11.0 Power Added Efficiency at 1 Compression Vds=6V, Ids=50% Idss f=12ghz 45 Noise Figure f=12ghz 0.75 Vds=2V, Ids=15mA Associated Gain f=12ghz 12.5 Vds=2V, Ids=15mA Idss Saturated Drain Current Vds=3V, Vgs=0V 30 55 80 ma Gm Transconductance Vds=3V, Vgs=0V 35 60 ms Vp Pinch-off Voltage Vds=3V, Ids=1.0mA -1.0-2.5 V BVgd Drain Breakdown Voltage Igd=1.0mA -9-15 V BVgs Source Breakdown Voltage Igs=1.0mA -6-14 V Rth Thermal Resistance 480 * o C/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 10V 6V Vgs Gate-Source Voltage -6V -3V Ids Drain Current Idss 40mA Igsf Forward Gate Current 9mA 1.5mA Pin Input Power 16m @ 3 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 285mW 240mW m %

EPA018A-70 High Efficiency Heterojunction Power FET S-PARAMETERS 6V, 1/2 Idss FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.984-19.0 5.081 162.1 0.014 75.9 0.813-11.1 2.0 0.950-38.2 4.859 144.2 0.026 63.4 0.789-23.7 3.0 0.906-56.4 4.547 127.3 0.035 51.4 0.766-35.3 4.0 0.863-74.0 4.348 111.9 0.041 42.1 0.745-44.6 5.0 0.813-90.7 4.195 97.2 0.047 32.9 0.713-53.3 6.0 0.764-105.0 3.973 82.9 0.049 24.2 0.675-64.4 7.0 0.715-120.3 3.746 68.8 0.050 15.3 0.649-74.6 8.0 0.663-134.7 3.572 55.9 0.046 6.9 0.612-82.6 9.0 0.614-157.7 3.501 41.4 0.044 5.6 0.605-87.5 10.0 0.587-179.9 3.388 26.4 0.044 2.1 0.585-97.0 11.0 0.561 168.8 3.307 13.4 0.044 0.2 0.562-110.8 12.0 0.539 153.6 3.248 0.0 0.045 2.0 0.551-122.8 13.0 0.573 127.2 3.097-15.8 0.049-0.6 0.527-131.9 14.0 0.611 104.9 2.873-31.1 0.050-6.1 0.510-143.2 15.0 0.613 90.9 2.805-46.4 0.055-13.0 0.513-162.9 16.0 0.620 74.4 2.730-62.7 0.059-20.7 0.503 178.0 17.0 0.640 58.9 2.432-76.4 0.056-20.7 0.463 169.1 18.0 0.692 49.7 2.365-87.1 0.075-32.3 0.522 157.0 19.0 0.691 32.0 2.236-104.4 0.064-49.1 0.540 133.7 20.0 0.731 16.7 2.163-120.6 0.064-59.8 0.591 117.3 21.0 0.783 7.8 2.061-134.9 0.065-70.3 0.578 106.6 22.0 0.771-2.6 1.923-148.7 0.062-85.6 0.592 95.6 23.0 0.752-20.8 1.800-166.5 0.058-103.2 0.592 76.9 24.0 0.776-37.7 1.693 174.8 0.054-123.0 0.584 59.7 25.0 0.756-48.6 1.690 160.0 0.055-139.5 0.568 45.9 26.0 0.742-62.4 1.710 144.5 0.060-154.9 0.555 33.7

91-98 47-55 27 EPA018A-SOT23 PRELIMINARY DC-6GHz High Efficiency Heterojunction Power FET LOW COST SURFACE-MOUNT PLASTIC PACKAGE +20.0m TYPICAL OUTPUT POWER 17.0 TYPICAL POWER GAIN AT 2GHz 0.7 TYPICAL NOISE FIGURE AT 2GHz +27m TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz 0.3 X 180 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY 110-120 15-20 SOURCE DRAIN GATE 38 75.5 4-7 37-47 2-4 ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 Output Power at 1 Compression f=2ghz Vds=6V, Ids=30mA G 1 Gain at 1 Compression f=2ghz Vds=6V, Ids=30mA NF Noise Figure, Vds=2V, Ids=15mA f=2ghz Vds=6V, Ids=30mA IP3 Output 3rd Order Intercept Point f=2ghz Vds=6V, Ids=30mA 18.0 20.0 15.0 17.0 0.7 0.9 m 27 m Idss Saturated Drain Current Vds=3V, Vgs=0V 30 55 80 ma Gm Transconductance Vds=3V, Vgs=0V 35 60 ms Vp Pinch-off Voltage Vds=3V, Ids=1.0mA -1.0-2.5 V BVgd Drain Breakdown Voltage Igd=0.5mA -9-15 V BVgs Source Breakdown Voltage Igs=0.5mA -7-14 V Rth Thermal Resistance 450* * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 6V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 45mA Igsf Forward Gate Current 9mA 1.5mA Pin Input Power 16m @3 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 330mW 280mW o C/W

EPA018A-SOT23 PRELIMINARY DC-6GHz High Efficiency Heterojunction Power FET S-PARAMETERS 6V, 30mA FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 0.1 1.016-3.8 6.436 176.9 0.001-173.4 0.828-1.2 0.2 1.008-7.6 6.387 174.0 0.006 79.5 0.822-4.0 0.3 1.009-11.4 6.371 170.9 0.009 81.1 0.822-6.2 0.4 1.004-15.4 6.355 167.7 0.012 79.8 0.821-8.4 0.5 1.006-19.2 6.351 164.6 0.016 80.6 0.821-10.4 1.0 0.984-39.1 6.167 148.0 0.031 67.2 0.805-21.7 1.5 0.898-44.3 4.608 136.1 0.033 62.1 0.812-22.8 2.0 0.834-60.3 4.347 120.9 0.041 53.6 0.777-31.5 2.5 0.773-74.7 3.971 107.2 0.045 45.6 0.746-39.1 3.0 0.719-86.1 3.620 95.6 0.047 40.2 0.727-45.3 3.5 0.667-95.1 3.357 85.6 0.048 39.1 0.713-49.5 4.0 0.606-103.0 3.204 76.5 0.050 39.6 0.703-53.0 4.5 0.529-111.7 3.113 66.9 0.055 42.2 0.686-56.6 5.0 0.448-123.5 3.048 56.8 0.062 44.9 0.660-60.7 5.5 0.376-140.5 2.932 46.2 0.072 44.8 0.627-66.0 6.0 0.338-160.8 2.767 35.5 0.085 43.0 0.592-72.5 6.5 0.332-179.3 2.542 25.4 0.099 37.5 0.549-79.5 7.0 0.312 171.0 2.288 18.2 0.105 27.2 0.494-83.0 7.5 0.254 168.2 2.134 15.0 0.082 26.1 0.505-78.5 8.0 0.215 179.1 2.204 11.5 0.093 52.4 0.617-80.4 8.5 0.208 172.4 2.298 3.6 0.145 53.8 0.691-88.7 9.0 0.186 145.9 2.317-5.4 0.184 46.1 0.698-96.8 9.5 0.214 116.9 2.337-14.0 0.224 41.7 0.716-105.7 10.0 0.302 102.2 2.295-23.1 0.268 34.6 0.689-118.2 10.5 0.381 98.9 2.263-29.0 0.309 28.8 0.668-128.1 11.0 0.433 105.6 2.386-33.9 0.368 24.9 0.725-136.4 11.5 0.542 117.3 2.658-41.4 0.485 19.4 0.905-148.9 12.0 0.897 108.0 3.059-56.2 0.673-2.8 1.112-172.8

EPA025A High Efficiency Heterojunction Power FET +22.5m TYPICAL OUTPUT POWER 11.0 TYPICAL POWER GAIN AT 18 GHz TYPICAL 0.85 NOISE FIGURE AND 11.0 ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 5 ma PER BIN RANGE 40 420 50 104 D D S G G S 59 50 78 48 260 90 ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE NF Ga Output Power at 1 Compression f=12ghz 21.0 22.5 Vds=8V, Ids=50% Idss f=18ghz 22.5 Gain at 1 Compression f=12ghz 12.0 13.5 Vds=8V, Ids=50% Idss f=18ghz 11.0 Gain at 1 Compression Vds=8V, Ids=50% Idss f=12ghz 47 Noise Figure f=12ghz 0.85 Vds=2V, Ids=15mA Associated Gain f=12ghz 11.0 Vds=2V, Ids=15mA Idss Saturated Drain Current Vds=3V, Vgs=0V 40 75 105 ma Gm Transconductance Vds=3V, Vgs=0V 50 80 ms Vp Pinch-off Voltage Vds=3V, Ids=1.0mA -1.0-2.5 V BVgd Drain Breakdown Voltage Igd=1.0mA -11-15 V BVgs Source Breakdown Voltage Igs=1.0mA -7-14 V m % Rth Thermal Resistance (Au-Sn Eutectic Attach) 155 o C/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 90mA Igsf Forward Gate Current 12mA 2mA Pin Input Power 19m @3 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 880mW 730mW

EPA025A High Efficiency Heterojunction Power FET +22.5m TYPICAL OUTPUT POWER 11.0 TYPICAL POWER GAIN AT 18 GHz TYPICAL 0.85 NOISE FIGURE AND 11.0 ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 5 ma PER BIN RANGE 6 ' ' * * 6 ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P1 G1 PAE NF Ga Output Power at 1 Compression f=12ghz 21.0 22.5 Vds=8V, Ids=50% Idss f=18ghz 22.5 Gain at 1 Compression f=12ghz 12.0 13.5 Vds=8V, Ids=50% Idss f=18ghz 11.0 Gain at 1 Compression Vds=8V, Ids=50% Idss f=12ghz 47 Noise Figure f=12ghz 0.85 Vds=2V, Ids=15mA Associated Gain f=12ghz 11.0 Vds=2V, Ids=15mA Idss Saturated Drain Current Vds=3V, Vgs=0V 40 75 105 ma Gm Transconductance Vds=3V, Vgs=0V 50 80 ms Vp Pinch-off Voltage Vds=3V, Ids=1.0mA -1.0-2.5 V BVgd Drain Breakdown Voltage Igd=1.0mA -11-15 V BVgs Source Breakdown Voltage Igs=1.0mA -7-14 V m % Rth Thermal Resistance (Au-Sn Eutectic Attach) 155 MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 90mA Igsf Forward Gate Current 12mA 2mA Pin Input Power 19m @3 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 880mW 730mW o C/W

EPA025A High Efficiency Heterojunction Power FET S-PARAMETERS 8V, 1/2 Idss FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.977-18.0 5.880 165.4 0.013 76.4 0.824-5.7 21.0 0.778-176.3 1.773 15.8 0.064 21.3 0.640-112.8 2.0 0.956-35.4 5.651 153.1 0.024 69.4 0.811-11.6 22.0 0.782 179.5 1.687 8.8 0.068 18.9 0.650-122.9 3.0 0.920-51.6 5.344 141.0 0.033 62.0 0.780-16.7 23.0 0.788 175.3 1.592 1.5 0.071 16.5 0.667-132.8 4.0 0.890-67.1 4.998 129.8 0.040 53.8 0.752-22.2 24.0 0.792 172.1 1.488-5.4 0.074 15.5 0.689-142.0 5.0 0.860-81.1 4.600 119.2 0.046 48.5 0.721-27.3 25.0 0.805 170.2 1.390-11.8 0.075 15.4 0.715-150.5 6.0 0.837-93.0 4.216 109.7 0.048 43.0 0.701-32.5 26.0 0.800 169.2 1.272-17.1 0.078 17.5 0.751-156.8 7.0 0.820-103.5 3.858 101.0 0.050 38.3 0.684-38.0 27.0 0.806 168.2 1.179-21.7 0.080 18.7 0.763-162.7 8.0 0.808-112.4 3.521 93.0 0.051 34.3 0.672-43.4 28.0 0.818 168.3 1.103-25.2 0.085 20.1 0.789-166.0 9.0 0.798-119.7 3.208 85.7 0.050 30.0 0.660-48.9 29.0 0.828 168.0 1.033-28.4 0.092 23.5 0.800-169.2 10.0 0.790-125.1 2.942 79.7 0.047 27.3 0.658-53.7 30.0 0.820 167.7 0.974-31.4 0.098 23.1 0.808-171.5 11.0 0.788-130.0 2.717 73.5 0.046 26.3 0.660-58.6 31.0 0.824 167.4 0.927-34.1 0.104 23.6 0.809-173.9 12.0 0.784-134.0 2.525 68.0 0.045 25.8 0.663-63.4 32.0 0.819 166.8 0.903-36.6 0.106 22.6 0.811-176.6 13.0 0.781-137.6 2.362 62.8 0.044 24.4 0.665-67.7 33.0 0.809 165.5 0.873-39.9 0.109 21.1 0.813 179.6 14.0 0.779-140.9 2.239 58.1 0.043 25.2 0.665-71.4 34.0 0.803 163.0 0.869-44.4 0.110 19.2 0.809 174.9 15.0 0.781-144.5 2.153 52.9 0.043 25.7 0.669-75.3 35.0 0.799 159.4 0.865-49.8 0.111 17.2 0.820 167.7 16.0 0.780-148.3 2.088 47.9 0.044 28.7 0.675-79.2 36.0 0.800 155.1 0.858-56.9 0.113 16.4 0.837 158.4 17.0 0.776-153.2 2.022 42.2 0.048 27.3 0.669-84.2 37.0 0.810 149.3 0.856-65.2 0.118 10.1 0.864 146.7 18.0 0.776-158.1 1.975 36.6 0.053 26.8 0.662-88.9 38.0 0.823 142.4 0.832-74.5 0.120 0.4 0.875 134.4 19.0 0.776-163.2 1.943 30.3 0.057 26.4 0.654-94.8 39.0 0.832 132.4 0.787-85.9 0.121-12.8 0.895 122.9 20.0 0.773-169.1 1.902 23.6 0.062 23.9 0.651-101.7 40.0 0.822 125.1 0.716-96.2 0.111-27.3 0.899 113.0 Note: The data included 0.7 mils diameter Au bonding wires 2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 4 source wires, 7 mils each.

EPA025A High Efficiency Heterojunction Power FET S-PARAMETERS 2V, 15mA Freq ---S11--- ---S21--- ---S12--- ---S22--- Freq ---S11--- ---S21--- ---S12--- ---S22--- GHz Mag Ang Mag Ang Mag Ang Mag Ang GHz Mag Ang Mag Ang Mag Ang Mag Ang 1.0 0.990-16.2 6.768 167.3 0.020 80.0 0.615-10.6 21.0 0.711 179.5 2.038 33.0 0.116-6.7 0.353-136.9 2.0 0.961-32.3 6.535 155.4 0.039 70.1 0.597-20.8 22.0 0.722 174.6 1.933 27.9 0.114-8.8 0.343-146.9 3.0 0.933-48.0 6.261 144.1 0.055 61.5 0.561-31.3 23.0 0.723 171.1 1.838 23.1 0.113-10.9 0.361-156.4 4.0 0.897-63.8 5.880 133.0 0.069 53.2 0.523-41.8 24.0 0.724 166.4 1.713 18.0 0.111-12.5 0.390-165.8 5.0 0.866-76.5 5.414 123.7 0.078 46.3 0.503-50.0 25.0 0.739 163.2 1.600 14.2 0.108-13.3 0.418-168.9 6.0 0.833-88.2 4.964 115.0 0.086 40.0 0.468-57.7 26.0 0.739 161.9 1.487 10.8 0.104-13.4 0.458-172.1 7.0 0.810-98.6 4.585 107.0 0.091 34.6 0.441-66.2 27.0 0.740 161.8 1.405 9.1 0.104-12.2 0.482-169.3 8.0 0.789-108.0 4.215 99.9 0.095 29.8 0.419-73.2 28.0 0.730 161.3 1.356 6.6 0.103-11.3 0.519-168.9 9.0 0.769-115.9 3.893 93.4 0.098 25.3 0.406-80.1 29.0 0.715 159.4 1.333 4.5 0.106-10.4 0.521-166.2 10.0 0.753-122.8 3.614 87.6 0.099 21.1 0.390-86.4 30.0 0.709 155.1 1.307 0.7 0.107-10.6 0.530-166.6 11.0 0.738-129.6 3.371 81.6 0.101 18.0 0.388-93.0 31.0 0.710 151.4 1.292-2.3 0.111-12.3 0.508-166.0 12.0 0.728-136.3 3.141 76.0 0.101 14.3 0.378-99.2 32.0 0.691 149.3 1.273-6.0 0.113-13.2 0.511-169.7 13.0 0.722-141.0 2.925 71.2 0.102 11.9 0.390-105.0 33.0 0.685 143.3 1.280-11.0 0.115-16.8 0.493-174.4 14.0 0.711-144.8 2.754 67.0 0.102 9.2 0.407-106.6 34.0 0.678 137.2 1.238-15.8 0.115-19.8 0.492 179.1 15.0 0.700-149.3 2.635 62.5 0.104 7.6 0.408-106.9 35.0 0.692 132.2 1.211-19.7 0.116-23.0 0.490 171.5 16.0 0.696-156.8 2.550 57.2 0.107 5.0 0.396-110.5 36.0 0.702 129.0 1.182-24.3 0.115-26.4 0.490 167.3 17.0 0.698-164.6 2.430 51.6 0.108 1.8 0.389-115.8 37.0 0.709 122.3 1.173-29.7 0.117-30.7 0.469 156.7 18.0 0.704-170.3 2.298 46.7 0.109-0.6 0.377-119.9 38.0 0.740 114.8 1.112-37.4 0.118-39.7 0.494 140.6 19.0 0.710-174.8 2.201 41.9 0.111-2.9 0.369-125.2 39.0 0.776 113.3 1.009-41.2 0.112-43.4 0.553 135.6 20.0 0.709-179.4 2.117 36.8 0.112-5.4 0.373-131.6 40.0 0.793 118.4 0.919-40.8 0.108-42.6 0.547 142.6 EPA025A Noise Parameters Vds=2V, Ids=15mA Freq Gamma Opt Nfmin (GHz) (MAG) (ANG) () Rn/50 2 0.82 17 0.37 0.57 4 0.8 36 0.46 0.51 6 0.78 49 0.56 0.49 8 0.76 63 0.64 0.44 10 0.73 79 0.76 0.39 12 0.71 94 0.88 0.35 14 0.69 103 1.08 0.31 16 0.68 118 1.31 0.26 18 0.68 131 1.51 0.19 20 0.67 142 1.65 0.14 22 0.66 149 1.88 0.12 24 0.64 162 2.05 0.076 26 0.62 172 2.29 0.064

0LQ /HDGV $OO EPA025A-70 High Efficiency Heterojunction Power FET NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +21.5m TYPICAL OUTPUT POWER 8.0 TYPICAL POWER GAIN AT 18GHz TYPICAL 0.85 NOISE FIGURE AND 11.0 ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY ' 6 6 * ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE NF Ga Output Power at 1 Compression f=12ghz 19.5 21.5 Vds=6V, Ids=50% Idss f=18ghz 21.5 Gain at 1 Compression f=12ghz 9.5 11.0 Vds=6V, Ids=50% Idss f=18ghz 8.0 Power Added Efficiency at 1 Compression Vds=6V, Ids=50% Idss f=12ghz 47 Noise Figure f=12ghz 0.85 Vds=2V, Ids=15mA Associated Gain f=12ghz 11.0 Vds=2V, Ids=15mA Idss Saturated Drain Current Vds=3V, Vgs=0V 40 75 105 ma Gm Transconductance Vds=3V, Vgs=0V 50 80 ms Vp Pinch-off Voltage Vds=3V, Ids=1.0mA -1.0-2.5 V BVgd Drain Breakdown Voltage Igd=1.0mA -9-15 V BVgs Source Breakdown Voltage Igs=1.0mA -6-14 V Rth Thermal Resistance 370 * o C/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 10V 6V Vgs Gate-Source Voltage -6V -3V Ids Drain Current Idss 50mA Igsf Forward Gate Current 12mA 2mA Pin Input Power 18m @ 3 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 370mW 310mW m %

EPA025A-70 High Efficiency Heterojunction Power FET S-PARAMETERS S-PARAMETERS 6V, 1/2 Idss 2V, 15mA FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.963-26.2 6.488 155.5 0.015 75.3 0.795-12.4 1.0 1.014-22.6 8.052 156.7 0.030 72.3 0.546-27.0 2.0 0.886-51.2 5.91 132.5 0.026 60.1 0.76-25.4 2.0 0.927-42.6 5.927 138.8 0.043 62.6 0.591-31.6 3.0 0.799-73.4 5.223 112.3 0.033 49.6 0.729-37 3.0 0.861-62.4 5.434 120.8 0.058 49.9 0.564-45.7 4.0 0.716-94.3 4.709 94.4 0.038 44.2 0.707-45.9 4.0 0.801-79.1 4.978 104.7 0.069 41.5 0.524-57.2 5.0 0.638-113.8 4.296 77.9 0.042 39.6 0.68-54.4 5.0 0.736-95.5 4.683 89.0 0.080 31.5 0.466-69.3 6.0 0.579-129.1 3.913 62.7 0.045 37.7 0.651-65.5 6.0 0.657-111.4 4.309 73.9 0.086 22.2 0.437-84.8 7.0 0.517-145.7 3.559 47.9 0.047 34.2 0.637-76 7.0 0.589-129.0 3.951 60.4 0.091 15.0 0.427-91.9 8.0 0.462-161.5 3.288 34.4 0.048 33.9 0.619-84.4 8.0 0.549-148.7 3.736 46.7 0.097 6.7 0.399-99.8 9.0 0.424 172.2 3.097 19.9 0.055 34.3 0.627-90.9 9.0 0.531-155.8 3.519 33.3 0.101-3.0 0.276-120.8 10.0 0.409 148.3 2.9 4.8 0.064 31 0.623-102.3 10.0 0.472-170.6 3.390 20.1 0.102-6.0 0.294-144.1 11.0 0.381 134.7 2.794-9.1 0.074 25.6 0.62-118 11.0 0.427 160.9 3.173 6.5 0.106-14.1 0.330-145.0 12.0 0.366 115.9 2.692-23.3 0.086 19.6 0.629-132.5 12.0 0.443 138.7 3.007-6.3 0.107-21.1 0.291-146.4 13.0 0.429 92.8 2.521-38.3 0.098 10.5 0.618-144.4 13.0 0.484 128.8 2.870-20.5 0.114-29.6 0.254 168.5 14.0 0.483 73.8 2.324-53.1 0.106 0.1 0.612-157.7 14.0 0.443 112.4 2.679-34.6 0.113-39.6 0.304 139.3 15.0 0.488 56.6 2.209-69.6 0.115-12 0.633-178.6 15.0 0.464 88.7 2.434-47.9 0.109-46.4 0.293 145.2 16.0 0.506 38.2 2.089-86.7 0.123-25.8 0.642 160.4 16.0 0.514 66.6 2.344-61.5 0.110-54.6 0.255 144.9 17.0 0.52 26.1 1.874-99.9 0.124-33.2 0.607 149.2 17.0 0.532 68.8 2.277-75.2 0.116-63.1 0.339 91.6 18.0 0.559 17.4 1.823-112.1 0.142-46.2 0.673 136.7 18.0 0.532 50.3 2.024-87.9 0.113-70.5 0.411 89.7 19.0 0.579-2.4 1.637-128.6 0.132-60.9 0.687 115.8 19.0 0.573 35.5 1.955-98.2 0.118-80.0 0.347 88.4 20.0 0.625-15.5 1.561-144.3 0.135-73.4 0.744 98.8 20.0 0.634 21.2 1.904-111.2 0.113-91.2 0.314 77.2 21.0 0.622-23.3 1.49-159.8 0.141-86.7 0.733 86.7 21.0 0.587 15.3 1.823-129.0 0.114-103.3 0.483 47.3 22.0 0.583-35.7 1.399-173.6 0.144-99.4 0.738 76.6 22.0 0.585 7.8 1.672-139.1 0.110-110.5 0.529 52.6 23.0 0.605-55.5 1.27 170.1 0.141-115.7 0.727 58.1 23.0 0.628-10.7 1.658-153.8 0.117-124.2 0.375 43.3 24.0 0.639-69.2 1.179 152.8 0.144-132.1 0.73 38.8 24.0 0.642-26.5 1.611-172.2 0.120-140.5 0.404 15.5 25.0 0.571-84.8 1.157 135.4 0.156-149.3 0.736 25.1 25.0 0.572-40.1 1.491 171.7 0.115-154.2 0.553 6.6 26.0 0.554-106.7 1.153 118.9 0.174-164.6 0.733 13.3 26.0 0.623-43.2 1.455 160.9 0.124-162.8 0.465 5.2 EPA025A-70 Noise Parameters Vds=2V, Ids=15mA Freq. Popt Nfmin (GHz) (MAG) (ANG) () Rn/50 2 0.73 25 0.37 0.22 4 0.64 55 0.46 0.18 6 0.49 81 0.56 0.14 8 0.42 107 0.64 0.11 10 0.32 135 0.76 0.08 12 0.26 173 0.88 0.08 14 0.28-156 1.08 0.12 16 0.32-103 1.31 0.24 18 0.37-55 1.51 0.37 20 0.44-25 1.65 0.51 22 0.44-15 1.88 0.59 24 0.46 25 2.05 0.69 26 0.44 39 2.29 0.49

EPA030C High Efficiency Heterojunction Power FET +23.0m TYPICAL OUTPUT POWER 11.0 TYPICAL POWER GAIN AT 18GHz 0.3 X 300 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 10mA PER BIN RANGE 40 330 50 D S G S 95 45 48 100 320 ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE Output Power at 1 Compression f=12ghz 21.0 23.0 Vds=8V, Ids=50% Idss f=18ghz 23.0 Gain at 1 Compression f=12ghz 12.0 13.5 Vds=8V, Ids=50% Idss f=18ghz 11.0 Power Added Efficiency at 1 Compression Vds=8V, Ids=50% Idss f=12ghz 45 Idss Saturated Drain Current Vds=3V, Vgs=0V 50 90 130 ma Gm Transconductance Vds=3V, Vgs=0V 60 95 ms Vp Pinch-off Voltage Vds=3V, Ids=1.0mA -1.0-2.5 V BVgd Drain Breakdown Voltage Igd=1.0mA -11-15 V BVgs Source Breakdown Voltage Igs=1.0mA -7-14 V m % Rth Thermal Resistance (Au-Sn Eutectic Attach) 125 o C/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 110mA Igsf Forward Gate Current 15mA 2.5mA Pin Input Power 21m @3 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 1.1W 900mW

EPA030C High Efficiency Heterojunction Power FET S-PARAMETERS 8V, 1/2 Idss FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.975-23.9 7.888 162.4 0.017 76.0 0.750-9.3 21.0 0.850 130.8 1.761-0.7 0.069-18.3 0.404-121.6 2.0 0.951-46.7 7.419 147.5 0.032 63.5 0.726-18.3 22.0 0.854 128.3 1.647-5.9 0.068-18.6 0.416-129.4 3.0 0.911-67.1 6.800 133.6 0.044 53.5 0.682-25.5 23.0 0.856 125.8 1.554-11.0 0.067-19.4 0.435-136.1 4.0 0.883-85.5 6.169 121.3 0.053 44.0 0.643-32.0 24.0 0.858 123.8 1.466-16.0 0.067-19.4 0.449-142.5 5.0 0.859-101.4 5.542 110.4 0.059 36.3 0.605-37.1 25.0 0.861 121.9 1.400-21.0 0.067-19.1 0.474-148.3 6.0 0.840-114.7 4.993 100.9 0.063 30.0 0.577-41.6 26.0 0.857 120.7 1.336-25.3 0.067-16.9 0.489-153.1 7.0 0.825-126.5 4.526 92.2 0.065 25.0 0.554-45.8 27.0 0.859 118.5 1.283-30.2 0.068-17.1 0.504-158.7 8.0 0.814-136.9 4.125 84.2 0.067 19.6 0.535-49.6 28.0 0.860 116.0 1.241-34.9 0.070-17.2 0.515-162.6 9.0 0.808-146.1 3.780 76.9 0.067 15.1 0.517-53.4 29.0 0.863 112.5 1.204-40.3 0.072-17.4 0.523-167.9 10.0 0.801-154.1 3.495 70.1 0.068 11.2 0.504-57.1 30.0 0.861 108.2 1.160-45.6 0.073-19.5 0.533-173.0 11.0 0.799-162.0 3.255 63.3 0.067 7.9 0.491-61.3 31.0 0.869 103.9 1.120-51.1 0.072-21.1 0.540-178.8 12.0 0.797-169.5 3.041 56.7 0.067 4.5 0.479-65.6 32.0 0.871 98.2 1.071-56.8 0.072-23.7 0.552 175.1 13.0 0.794-176.9 2.862 50.2 0.068 1.6 0.466-70.4 33.0 0.876 93.5 1.013-62.5 0.070-26.9 0.563 168.2 14.0 0.791 175.9 2.700 43.7 0.068-1.9 0.453-75.2 34.0 0.895 88.7 0.959-68.0 0.068-28.5 0.579 161.5 15.0 0.799 168.2 2.566 37.0 0.069-4.3 0.442-80.5 35.0 0.926 84.1 0.910-73.5 0.069-31.3 0.610 153.7 16.0 0.800 160.9 2.425 30.4 0.069-7.5 0.434-86.1 36.0 0.952 81.3 0.858-79.0 0.072-36.4 0.642 146.1 17.0 0.807 153.3 2.282 23.6 0.070-10.9 0.421-92.3 37.0 0.984 77.8 0.815-84.5 0.075-43.8 0.677 137.7 18.0 0.816 146.4 2.155 17.0 0.070-12.1 0.411-98.4 38.0 1.015 74.8 0.765-91.0 0.073-51.4 0.702 130.2 19.0 0.824 139.8 2.039 10.5 0.071-15.2 0.402-105.0 39.0 1.032 71.4 0.702-97.1 0.074-65.3 0.712 123.9 20.0 0.832 133.9 1.913 4.3 0.071-17.8 0.400-111.3 40.0 1.002 70.1 0.650-103.1 0.072-70.2 0.725 119.1 Note: The data included 0.7 mils diameter Au bonding wires: 1 gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each.

EPA040A High Efficiency Heterojunction Power FET +24.5m TYPICAL OUTPUT POWER 11.0 TYPICAL POWER GAIN AT 18GHz 0.3 X 400 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 10mA PER BIN RANGE ' * 6 6 ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE Output Power at 1 Compression f=12ghz 22.5 24.5 Vds=8V, Ids=50% Idss f=18ghz 24.5 Gain at 1 Compression f=12ghz 11.5 13.5 Vds=8V, Ids=50% Idss f=18ghz 11.0 Power Added Efficiency at 1 Compression Vds=8V, Ids=50% Idss f=12ghz 45 Idss Saturated Drain Current Vds=3V, Vgs=0V 70 120 160 ma Gm Transconductance Vds=3V, Vgs=0V 80 130 ms Vp Pinch-off Voltage Vds=3V, Ids=1.0mA -1.0-2.5 V BVgd Drain Breakdown Voltage Igd=1.0mA -11-15 V BVgs Source Breakdown Voltage Igs=1.0mA -7-14 V m % Rth Thermal Resistance (Au-Sn Eutectic Attach) 105 o C/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 135mA Igsf Forward Gate Current 20mA 3mA Pin Input Power 21m @3 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 1.3W 1.1W

EPA040A High Efficiency Heterojunction Power FET S-PARAMETERS 8V, 1/2 Idss FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.972-32.9 10.341 157.6 0.021 72.5 0.666-12.8 21.0 0.856 132.6 1.642-6.5 0.065-8.2 0.341-155.6 2.0 0.933-62.1 9.244 139.3 0.036 57.7 0.611-24.0 22.0 0.862 128.5 1.512-12.2 0.064-7.9 0.382-165.1 3.0 0.893-86.0 8.024 123.8 0.046 45.6 0.546-33.0 23.0 0.868 125.3 1.397-17.8 0.063-8.5 0.434-172.6 4.0 0.863-105.4 6.944 110.9 0.053 36.4 0.493-40.6 24.0 0.865 122.5 1.295-22.5 0.063-8.1 0.481-177.0 5.0 0.826-123.4 6.013 99.3 0.057 29.0 0.451-48.3 25.0 0.875 120.9 1.219-26.9 0.063-6.6 0.524 179.3 6.0 0.812-135.8 5.262 89.9 0.059 24.0 0.425-54.7 26.0 0.870 119.4 1.140-30.9 0.065-6.1 0.563 177.6 7.0 0.805-145.7 4.649 81.8 0.060 19.9 0.412-60.7 27.0 0.877 117.9 1.082-34.2 0.067-4.3 0.597 176.5 8.0 0.801-153.8 4.162 74.6 0.060 15.8 0.405-66.4 28.0 0.873 117.6 1.038-37.9 0.071-1.3 0.616 174.5 9.0 0.797-160.7 3.745 67.9 0.060 13.0 0.401-71.6 29.0 0.868 116.4 1.015-41.4 0.073-3.3 0.628 173.3 10.0 0.800-166.7 3.415 61.7 0.060 10.9 0.405-75.8 30.0 0.869 114.9 1.002-45.6 0.078-3.2 0.634 170.8 11.0 0.798-172.5 3.140 55.8 0.059 9.2 0.409-80.0 31.0 0.877 112.6 0.991-50.6 0.079-5.2 0.624 167.1 12.0 0.803-177.9 2.903 49.7 0.059 7.4 0.411-83.9 32.0 0.872 109.8 0.979-56.0 0.084-7.8 0.611 161.4 13.0 0.807 176.4 2.710 44.0 0.059 6.5 0.408-87.1 33.0 0.876 105.5 0.948-62.3 0.086-11.6 0.587 152.9 14.0 0.813 170.4 2.546 38.2 0.060 4.5 0.403-90.6 34.0 0.888 101.7 0.933-68.8 0.089-15.1 0.586 142.2 15.0 0.815 164.3 2.386 32.0 0.059 3.4 0.393-94.4 35.0 0.915 96.8 0.888-75.6 0.090-22.0 0.588 129.2 16.0 0.820 157.9 2.259 25.5 0.060 0.7 0.379-99.0 36.0 0.944 92.3 0.834-82.9 0.091-29.9 0.612 116.3 17.0 0.826 151.5 2.128 19.2 0.062-1.1 0.358-105.9 37.0 0.974 86.3 0.772-90.1 0.089-40.0 0.654 103.9 18.0 0.835 144.8 2.007 12.6 0.063-2.3 0.340-113.4 38.0 0.989 82.3 0.699-97.4 0.082-49.1 0.712 95.1 19.0 0.839 139.0 1.891 5.7 0.063-3.9 0.323-124.1 39.0 0.997 77.6 0.618-103.3 0.077-61.4 0.751 89.9 20.0 0.847 133.3 1.780-1.0 0.065-6.1 0.319-137.0 40.0 0.988 76.1 0.552-107.6 0.068-67.3 0.786 88.5 Note: The data included 0.7 mils diameter Au bonding wires: 1 gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each.

40 180 Min. (All Leads) 70 EPA040A-70 High Efficiency Heterojunction Power FET NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +23.5m TYPICAL OUTPUT POWER 7.0 TYPICAL POWER GAIN AT 18GHz 0.3 X 400 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY S D G 20 S 44 19 4 ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE Output Power at 1 Compression f=12ghz 21.5 23.5 Vds=6V, Ids=50% Idss f=18ghz 23.5 Gain at 1 Compression f=12ghz 9.0 10.5 Vds=6V, Ids=50% Idss f=18ghz 7.0 Power Added Efficiency at 1 Compression Vds=6V, Ids=50% Idss f=12ghz 45 Idss Saturated Drain Current Vds=3V, Vgs=0V 70 120 160 ma Gm Transconductance Vds=3V, Vgs=0V 80 130 ms Vp Pinch-off Voltage Vds=3V, Ids=1.0mA -1.0-2.5 V BVgd Drain Breakdown Voltage Igd=1.0mA -9-15 V BVgs Source Breakdown Voltage Igs=1.0mA -6-14 V Rth Thermal Resistance 250 * o C/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 10V 6V Vgs Gate-Source Voltage -6V -3V Ids Drain Current Idss 75mA Igsf Forward Gate Current 20mA 3mA Pin Input Power 20m @ 3 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 550mW 455mW m %

EPA040A-70 High Efficiency Heterojunction Power FET S-PARAMETERS 6V, 1/2 Idss FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.948-35.2 9.101 150.6 0.021 70.0 0.643-17.1 2.0 0.846-66.9 7.892 124.5 0.035 55.8 0.585-33.4 3.0 0.753-93.4 6.667 103.2 0.043 44.7 0.538-46.2 4.0 0.676-118.2 5.797 84.5 0.049 36.8 0.503-55.8 5.0 0.620-140.9 5.131 67.6 0.053 30.8 0.459-65.0 6.0 0.584-158.2 4.584 52.4 0.056 27.7 0.417-77.2 7.0 0.552-177.3 4.133 37.4 0.059 23.8 0.401-88.6 8.0 0.527 165.1 3.768 23.5 0.060 21.8 0.370-97.7 9.0 0.540 139.6 3.473 8.3 0.066 20.1 0.363-107.1 10.0 0.567 119.0 3.201-7.1 0.072 13.6 0.348-122.4 11.0 0.573 105.6 3.058-21.8 0.080 7.2 0.338-143.5 12.0 0.596 89.7 2.916-37.2 0.088-0.9 0.344-163.9 13.0 0.668 73.3 2.662-52.4 0.092-10.0 0.329 176.9 14.0 0.717 58.9 2.395-66.9 0.094-19.8 0.337 157.9 15.0 0.731 44.4 2.248-83.7 0.097-32.4 0.382 134.6 16.0 0.748 28.6 2.067-101.6 0.095-46.9 0.411 110.5 17.0 0.744 18.0 1.835-114.4 0.093-52.3 0.405 96.9 18.0 0.772 8.9 1.768-127.1 0.101-70.2 0.471 85.8 19.0 0.784-7.3 1.597-143.9 0.086-85.7 0.503 68.2 20.0 0.809-20.0 1.484-160.4 0.081-101.5 0.551 52.0 21.0 0.788-29.3 1.401-175.3 0.081-116.7 0.549 38.9 22.0 0.747-41.8 1.337 170.2 0.082-133.9 0.538 29.7 23.0 0.762-59.5 1.218 152.4 0.083-153.9 0.515 10.7 24.0 0.772-73.4 1.100 133.5 0.088-173.7 0.502-11.8 25.0 0.693-89.6 1.067 116.8 0.103 169.3 0.529-25.6 26.0 0.679-111.5 1.065 98.2 0.130 151.4 0.500-42.5

EPA060A High Efficiency Heterojunction Power FET +26.5m TYPICAL OUTPUT POWER 10.5 TYPICAL POWER GAIN AT 18GHz 0.3 X 600 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 15mA PER BIN RANGE 35 S 95 500 50 116 D G S 40 80 D G S 48 100 320 ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE Output Power at 1 Compression f=12ghz 25.0 26.5 Vds=8V, Ids=50% Idss f=18ghz 26.5 Gain at 1 Compression f=12ghz 11.5 13.0 Vds=8V, Ids=50% Idss f=18ghz 10.5 Power Added Efficiency at 1 Compression Vds=8V, Ids=50% Idss f=12ghz 45 Idss Saturated Drain Current Vds=3V, Vgs=0V 105 180 255 ma Gm Transconductance Vds=3V, Vgs=0V 120 190 ms Vp Pinch-off Voltage Vds=3V, Ids=2.0mA -1.0-2.5 V BVgd Drain Breakdown Voltage Igd=1.0mA -11-15 V BVgs Source Breakdown Voltage Igs=1.0mA -7-14 V m % Rth Thermal Resistance (Au-Sn Eutectic Attach) 65 o C/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 220mA Igsf Forward Gate Current 30mA 5mA Pin Input Power 24m @3 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 2.1W 1.7W

EPA060A High Efficiency Heterojunction Power FET S-PARAMETERS 8V, 1/2 Idss FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.944-49.2 12.673 148.9 0.027 63.8 0.506-26.9 21.0 0.863 154.4 1.284 3.3 0.049-0.4 0.523-161.7 2.0 0.898-85.9 10.129 127.1 0.043 44.6 0.428-47.2 22.0 0.866 152.6 1.207-1.1 0.050 0.1 0.547-166.3 3.0 0.862-110.2 8.004 111.6 0.051 33.7 0.364-60.8 23.0 0.872 151.2 1.140-5.4 0.051 1.2 0.572-170.4 4.0 0.850-126.7 6.507 100.2 0.054 26.2 0.329-71.5 24.0 0.877 149.9 1.078-9.9 0.053 2.5 0.594-174.5 5.0 0.848-138.3 5.426 91.1 0.055 22.0 0.306-80.2 25.0 0.885 148.7 1.023-14.1 0.054 2.9 0.620-178.5 6.0 0.845-146.8 4.644 83.5 0.057 17.1 0.301-87.7 26.0 0.893 148.0 0.987-18.2 0.055 3.6 0.642 178.5 7.0 0.845-153.7 4.056 76.5 0.057 14.6 0.306-95.1 27.0 0.896 146.6 0.931-22.1 0.058 3.5 0.657 175.3 8.0 0.843-159.5 3.585 70.2 0.057 12.3 0.315-101.2 28.0 0.902 144.8 0.895-26.1 0.061 5.8 0.675 172.9 9.0 0.844-164.5 3.205 64.3 0.056 9.4 0.327-106.9 29.0 0.904 143.4 0.853-29.8 0.062 6.2 0.684 170.5 10.0 0.846-168.3 2.897 59.2 0.053 6.7 0.342-111.8 30.0 0.898 141.4 0.817-33.6 0.064 5.1 0.699 168.4 11.0 0.849-172.2 2.638 53.5 0.053 5.8 0.359-116.6 31.0 0.906 139.0 0.786-37.2 0.065 4.0 0.708 166.3 12.0 0.851-175.6 2.416 48.4 0.052 4.9 0.379-121.3 32.0 0.898 136.0 0.752-41.1 0.064 3.0 0.720 163.8 13.0 0.852-179.3 2.234 43.2 0.051 2.5 0.396-125.6 33.0 0.890 133.2 0.705-45.4 0.065 0.7 0.733 161.2 14.0 0.855 177.3 2.068 38.0 0.050 1.9 0.413-129.8 34.0 0.891 129.2 0.671-49.3 0.064 2.6 0.740 157.9 15.0 0.859 173.7 1.931 32.7 0.050 1.0 0.431-134.2 35.0 0.896 125.5 0.641-53.4 0.066-2.0 0.759 154.2 16.0 0.857 170.3 1.801 27.5 0.049 1.0 0.447-138.3 36.0 0.891 122.5 0.604-58.2 0.066-4.6 0.774 149.6 17.0 0.855 166.4 1.685 22.0 0.049-2.8 0.461-142.9 37.0 0.903 119.1 0.577-62.3 0.066-12.0 0.788 143.8 18.0 0.856 162.7 1.576 16.9 0.050-2.9 0.472-146.6 38.0 0.914 116.3 0.551-67.0 0.069-21.6 0.789 138.7 19.0 0.854 159.4 1.486 11.8 0.049-3.1 0.479-151.6 39.0 0.923 111.4 0.520-72.6 0.070-33.8 0.788 133.9 20.0 0.854 156.5 1.404 7.1 0.048-2.1 0.492-155.7 40.0 0.909 108.9 0.497-79.1 0.073-41.6 0.786 129.4 Note: The data included 0.7 mils diameter Au bonding wires: 2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 7 mils each.

EPA060B/EPA060BV High Efficiency Heterojunction Power FET +26.5m TYPICAL OUTPUT POWER 10.0 TYPICAL POWER GAIN FOR EPA060B AND 11.5 FOR EPA060BV AT 18GHz 0.4 TYPICAL NOISE FIGURE AT 2GHz 0.3 X 600 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EPA060BV WITH VIA HOLE SOURCE GROUNDING Idss SORTED IN 15mA PER BIN RANGE ' * ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS EPA060B EPA060BV UNIT P 1 G 1 PAE MIN TYP MAX MIN TYP MAX Output Power at 1 Compression f=12ghz 25 26.5 25 26.5 Vds=8V, Ids=50% Idss f=18ghz 26.5 26.5 Gain at 1 Compression f=12ghz 11 13 13 14.5 Vds=8V, Ids=50% Idss f=18ghz 10 11.5 Gain at 1 Compression Vds=8V, Ids=50% Idss f=12ghz 45 46 NF Noise Figure Vds=5V,Ids=50mA f=2ghz 0.4 0.4 GA Associated Gain Vds=5V,Ids=50mA f=2ghz 20 20 Idss Saturated Drain Current Vds=3V, Vgs=0V 110 180 250 110 180 250 ma Gm Transconductance Vds=3V, Vgs=0V 120 190 120 190 ms Vp Pinch-off Voltage Vds=3V, Ids=2.0mA -1-2.5-1 -2.5 V BVgd Drain Breakdown Voltage Igd=1.0mA -11-15 -11-15 V BVgs Source Breakdown Voltage Igs=1.0mA -7-14 -7-14 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 75 55 MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS EPA060B EPA060BV m % o C/W ABSOLUTE 1 CONTINUOUS 2 ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 8V 12V 8V Vgs Gate-Source Voltage -8V -3V -8V -3V Ids Drain Current Idss 190mA Idss Idss Igsf Forward Gate Current 30mA 5mA 30mA 5mA Pin Input Power 24m @ 3 Compression 24m @ 3 Compression Tch Channel Temperature 175 o C 150 o C 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C -65/175 o C -65/150 o C Pt Total Power Dissipation 1.8W 1.5W 2.5W 2.1W

EPA060B EPA060B/EPA060BV High Efficiency Heterojunction Power FET S-PARAMETERS EPA060B 8V, 1/2 Idss FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.912-55.0 13.184 146.1 0.025 58.3 0.496-22.8 21.0 0.851 136.3 1.376-26.4 0.062-7.0 0.447 140.5 2.0 0.875-91.9 10.384 124.2 0.038 43.8 0.408-38.2 22.0 0.817 129.7 1.248-34.0 0.063-9.8 0.503 136.6 4.0 0.831-134.1 6.817 94.7 0.047 24.8 0.291-61.2 24.0 0.736 117.1 1.007-47.5 0.064-11.7 0.579 130.5 6.0 0.769-161.8 4.779 73.1 0.047 15.2 0.247-80.4 26.0 0.691 109.5 0.826-56.5 0.065-10.0 0.630 124.9 8.0 0.729-179.0 3.510 57.1 0.045 10.0 0.238-94.5 28.0 0.684 105.6 0.712-62.8 0.070-8.9 0.654 118.0 10.0 0.721 171.2 2.712 45.6 0.040 8.6 0.231-104.0 30.0 0.711 105.9 0.662-69.6 0.076-11.0 0.676 106.7 12.0 0.747 165.5 2.232 35.7 0.040 10.8 0.227-117.4 32.0 0.784 106.5 0.652-79.4 0.077-14.4 0.680 90.3 14.0 0.793 162.5 1.952 26.3 0.041 11.1 0.217-136.4 34.0 0.881 105.0 0.631-92.6 0.078-26.4 0.733 69.7 16.0 0.842 158.5 1.790 14.4 0.046 9.0 0.234-164.1 36.0 0.945 96.2 0.603-110.7 0.079-51.0 0.833 55.0 18.0 0.879 150.7 1.670-0.5 0.053 3.2 0.291 171.1 38.0 0.867 79.5 0.513-132.5 0.067-92.7 0.940 42.8 20.0 0.871 138.7 1.509-18.9 0.061-4.6 0.375 149.3 40.0 0.723 63.1 0.398-148.7 0.054-132.5 0.965 38.8 EPA060BV 8V, 1/2 Idss FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.940-46.3 11.322 150.5 0.023 61.4 0.573-19.4 2.0 0.906-82.2 9.363 129.0 0.037 45.1 0.505-33.8 4.0 0.874-126.4 6.297 100.2 0.049 23.1 0.405-50.3 6.0 0.874-150.7 4.561 80.9 0.051 11.2 0.363-62.0 8.0 0.872-166.4 3.551 65.9 0.052 2.5 0.353-73.2 10.0 0.871-179.0 2.893 52.3 0.051-5.8 0.357-84.9 12.0 0.874 169.9 2.437 39.3 0.049-11.2 0.365-98.2 14.0 0.881 158.8 2.092 26.0 0.049-18.8 0.375-113.0 16.0 0.890 148.2 1.810 12.6 0.049-24.5 0.395-128.0 18.0 0.897 138.4 1.557-1.0 0.050-31.8 0.418-144.2 20.0 0.907 129.8 1.350-14.2 0.048-37.9 0.450-159.5 FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 21.0 0.917 129.3 1.213-18.8 0.047-38.3 0.501-167.0 22.0 0.925 127.9 1.124-24.5 0.045-40.2 0.521-174.2 24.0 0.932 125.0 0.980-35.1 0.044-41.5 0.578 174.4 26.0 0.925 121.9 0.871-45.0 0.042-41.4 0.627 166.0 28.0 0.921 117.0 0.791-54.9 0.042-41.1 0.670 158.7 30.0 0.911 109.3 0.727-65.9 0.042-49.1 0.703 150.9 32.0 0.904 100.1 0.646-78.1 0.039-64.5 0.738 142.7 34.0 0.916 91.6 0.551-89.8 0.038-72.2 0.770 133.4 36.0 0.951 85.1 0.475-100.8 0.041-85.6 0.824 123.2 38.0 0.994 80.6 0.410-111.5 0.055-104.3 0.870 112.4 40.0 0.995 79.1 0.362-122.6 0.069-121.9 0.894 104.0 Note: The data included 0.7 mils diameter Au bonding wires; 1gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each; no source wires for EPA060BV.

EPA060B/EPA060BV High Efficiency Heterojunction Power FET S-Parameters EPA060B, 5V,50mA FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.953-52.8 12.712 147.4 0.025 62.4 0.520-23.3 21.0 0.860 128.5 1.258-13.6 0.060-2.4 0.393-173.4 2.0 0.897-92.2 9.967 124.4 0.039 44.7 0.427-38.2 22.0 0.868 125.1 1.158-19.1 0.059-3.5 0.409 177.8 3.0 0.863-118.3 7.789 108.0 0.046 32.5 0.347-49.2 23.0 0.874 122.9 1.067-24.1 0.061-3.3 0.446 170.6 4.0 0.855-136.6 6.274 95.7 0.049 24.9 0.301-57.5 24.0 0.884 121.7 0.980-28.3 0.060-2.1 0.488 166.0 5.0 0.843-149.0 5.236 86.4 0.051 20.4 0.290-63.3 25.0 0.896 120.9 0.930-32.0 0.062 0.1 0.509 163.3 6.0 0.831-158.6 4.464 78.3 0.051 17.2 0.268-69.4 26.0 0.880 121.3 0.849-35.2 0.063 0.1 0.552 159.2 7.0 0.827-167.1 3.891 70.5 0.051 15.5 0.261-78.0 27.0 0.872 120.0 0.812-37.7 0.065 1.9 0.574 160.4 8.0 0.832-174.2 3.433 63.7 0.051 12.7 0.260-84.5 28.0 0.856 117.8 0.789-41.1 0.070 1.8 0.597 157.8 9.0 0.833 179.9 3.080 57.3 0.050 10.2 0.261-90.1 29.0 0.860 113.9 0.771-46.2 0.073-0.1 0.607 154.4 10.0 0.832 174.3 2.781 51.1 0.050 8.5 0.255-97.0 30.0 0.860 108.2 0.742-51.5 0.075-3.0 0.627 151.6 11.0 0.835 168.5 2.529 44.6 0.050 8.7 0.261-105.6 31.0 0.848 101.5 0.725-58.0 0.077-6.4 0.622 147.5 12.0 0.845 164.3 2.291 38.9 0.050 7.4 0.265-113.5 32.0 0.823 93.6 0.680-65.2 0.075-10.4 0.646 142.1 13.0 0.852 161.8 2.105 33.8 0.050 7.0 0.288-121.4 33.0 0.841 85.8 0.638-71.4 0.077-14.7 0.654 136.6 14.0 0.849 158.9 1.968 28.8 0.050 7.1 0.311-123.0 34.0 0.859 82.8 0.585-76.1 0.074-16.5 0.672 130.6 15.0 0.849 154.0 1.860 23.0 0.051 5.9 0.304-125.2 35.0 0.900 81.7 0.554-80.3 0.075-22.0 0.703 124.3 16.0 0.851 147.2 1.743 15.8 0.052 3.5 0.297-136.0 36.0 0.889 79.3 0.531-85.4 0.075-30.0 0.716 120.8 17.0 0.859 142.0 1.605 9.5 0.053 1.1 0.323-145.6 37.0 0.888 74.3 0.510-94.2 0.077-41.9 0.717 105.9 18.0 0.863 138.8 1.491 4.4 0.053 0.8 0.340-150.6 38.0 0.908 72.4 0.449-101.4 0.071-55.9 0.789 92.3 19.0 0.870 135.6 1.410-1.7 0.056 0.4 0.350-159.2 39.0 0.925 77.0 0.407-101.4 0.064-57.5 0.828 94.7 20.0 0.865 131.0 1.321-8.2 0.058-1.7 0.385-167.2 40.0 0.939 83.8 0.396-100.7 0.069-61.8 0.789 100.3 EPA060B Noise Parameters Vds=5V, Ids=50mA Freq Gamma Opt Nfmin (GHz) (MAG) (ANG) () Rn/50 2 0.4 44 0.45 0.09 4 0.46 89 0.55 0.07 6 0.52 108 0.75 0.06 8 0.52 137 0.92 0.05 10 0.53 162 1.37 0.04 12 0.54 174 1.47 0.04 14 0.58-176 1.92 0.05 16 0.62-162 2.47 0.06 18 0.68-153 3.03 0.09 20 0.69-147 3.24 0.14 22 0.7-141 3.43 0.24 24 0.72-132 3.65 0.38 26 0.74-128 3.86 0.6

0LQ /HDGV $OO Features NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +26m TYPICAL OUTPUT POWER 9.0 TYPICAL POWER GAIN AT 12 GHZ 0.4 TYPICAL NOISE FIGURE AT 2GHz 20 TYPICAL ASSOCIATED GAIN AT 2 GHz 0.3 X 600 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Applications High Dynamic Range LNA DC to 18 GHz EPA060B-70 High Efficiency Heterojunction Power FET ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE IP3 NF G A Output Power at 1 Compression Vds=6V, Ids=50% Idss Gain at 1 Compression Vds=6V, Ids=50% Idss Power Added Efficiency at 1 Compression Vds=6V, Ids=50% Idss +5m P OUT /Tone (5V/50mA) (5V/90mA) Noise Figure (5V/50mA) (5V/90mA) Associated Gain (5V/50mA) (5V/90mA) f=2ghz f=12ghz f=2ghz f=12ghz f=2ghz f=12ghz f=2ghz f=2ghz f=2ghz 24.0 17.0 7.0 26.0 25.5 19.0 9.0 55 45 28 31 0.4 0.6 20.0 20.0 Idss Saturated Drain Current Vds=3V, Vgs=0V 110 180 250 ma Gm Transconductance Vds=3V, Vgs=0V 120 190 ms Vp Pinch-off Voltage Vds=3V, Ids=2.0mA -1.0-2.5 V BVgd Drain Breakdown Voltage Igd=1.0mA -10-15 V BVgs Source Breakdown Voltage Igs=1.0mA -6-14 V Rth Thermal Resistance 175 * o C/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 10V 6V Vgs Gate-Source Voltage -6V -3V Ids Drain Current Idss 110mA Igsf Forward Gate Current 30mA 5mA Pin Input Power 23m @ 3 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 780mW 650mW ' 6 6 * m % m

EPA060B-70 High Efficiency Heterojunction Power FET Typical Performance Noise Figure &IP3 EPA060B-70 @5V, 2GHz (POUT/Tone = 5m) NF [] 0.8 0.6 0.4 0.2 0 0 0 20 40 60 80 100 120 140 Ids [ma] 40 30 20 10 IP3 [m] NF IP3 S-PARAMETERS 6V, 1/2 Idss FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.863-58.2 12.375 135.5 0.026 63.8 0.523-24.4 2.0 0.696-101.1 9.063 104.4 0.039 49.7 0.433-41.0 3.0 0.604-132.0 6.850 82.3 0.049 43.5 0.388-51.9 4.0 0.555-159.5 5.508 63.6 0.055 39.1 0.360-60.8 5.0 0.538 177.3 4.614 47.0 0.065 35.5 0.322-70.3 6.0 0.534 160.5 4.002 31.8 0.074 30.5 0.288-84.5 7.0 0.533 141.8 3.532 16.7 0.083 25.3 0.281-98.4 8.0 0.540 125.9 3.168 2.3 0.092 19.2 0.254-111.5 9.0 0.582 105.0 2.817-12.9 0.101 11.6 0.235-125.6 10.0 0.622 88.1 2.532-28.1 0.108 2.7 0.220-148.1 11.0 0.642 74.5 2.370-43.9 0.119-8.1 0.225-176.6 12.0 0.674 60.3 2.195-60.1 0.129-19.3 0.238 155.7 13.0 0.727 47.7 1.970-74.8 0.132-30.2 0.244 130.0 14.0 0.764 36.4 1.758-88.3 0.133-40.6 0.263 110.6 15.0 0.776 22.6 1.618-104.8 0.137-54.2 0.316 90.1 16.0 0.790 8.5 1.441-122.5 0.134-69.5 0.358 66.2 17.0 0.781-1.1 1.285-135.3 0.133-78.3 0.363 51.0 18.0 0.792-9.8 1.221-147.7 0.144-91.0 0.396 41.9 19.0 0.811-22.2 1.106-163.8 0.142-106.2 0.418 23.9 20.0 0.836-32.5 1.016-179.0 0.144-121.0 0.445 6.7 21.0 0.800-41.8 0.975 166.9 0.157-134.6 0.461-8.4 22.0 0.761-54.5 0.941 152.3 0.176-148.9 0.426-22.5 23.0 0.800-68.3 0.861 134.7 0.190-167.5 0.399-50.3 24.0 0.799-80.2 0.764 117.1 0.204 173.5 0.417-78.5 25.0 0.719-98.1 0.751 103.1 0.239 157.7 0.451-87.9 26.0 0.718-119.4 0.750 85.7 0.291 137.6 0.450-110.4

EPA060B-70 High Efficiency Heterojunction Power FET S-Parameters 5V,50ma FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.948-57.7 14.366 129.2 0.032 54.0 0.439-48.4 2.0 0.739-100.4 9.162 106.8 0.042 45.1 0.438-44.9 3.0 0.656-132.4 7.008 84.9 0.050 36.7 0.392-56.7 4.0 0.619-155.0 5.629 67.5 0.056 31.8 0.352-64.7 5.0 0.597-176.9 4.740 51.0 0.062 26.9 0.298-74.4 6.0 0.577 162.1 4.086 35.5 0.069 22.1 0.284-90.6 7.0 0.580 141.7 3.546 21.4 0.075 18.2 0.287-96.4 8.0 0.616 122.1 3.145 6.6 0.081 11.3 0.264-103.5 9.0 0.618 117.3 2.918-7.4 0.088 4.0 0.148-131.4 10.0 0.633 99.5 2.657-22.4 0.097-1.1 0.185-169.4 11.0 0.673 76.6 2.345-36.9 0.101-10.0 0.208-168.3 12.0 0.718 63.1 2.142-50.5 0.108-18.0 0.156 179.2 13.0 0.761 59.0 1.999-65.3 0.117-27.9 0.223 117.8 14.0 0.777 44.3 1.767-81.5 0.118-40.9 0.321 97.0 15.0 0.779 30.7 1.543-91.8 0.115-46.4 0.287 96.4 16.0 0.816 14.8 1.418-107.4 0.117-59.0 0.265 77.7 17.0 0.827 11.9 1.307-123.3 0.121-70.7 0.445 49.2 18.0 0.822 2.7 1.114-132.8 0.114-77.5 0.460 49.8 19.0 0.852-9.8 1.090-144.6 0.123-87.1 0.424 38.2 20.0 0.868-19.9 1.001-158.4 0.122-99.4 0.442 21.5 21.0 0.846-31.4 0.911-174.9 0.120-114.7 0.576 9.4 22.0 0.838-32.7 0.856 176.8 0.125-121.6 0.515 9.9 23.0 0.860-47.9 0.832 160.7 0.130-137.4 0.446-22.9 24.0 0.835-66.2 0.763 141.8 0.128-156.0 0.536-40.8 25.0 0.819-80.1 0.710 126.8 0.130-170.6 0.536-41.4 26.0 0.868-78.4 0.699 111.8 0.145 174.2 0.383-78.0 EPA060B-70 Noise Parameters Vds=5V, Ids=50mA Freq. Gamma Opt Nfmin (GHz) (MAG) (ANG) () Rn/50 2 0.46 44 0.45 0.11 4 0.35 96 0.55 0.08 6 0.23 165 0.75 0.06 8 0.27-145 0.92 0.08 10 0.35-85 1.37 0.23 12 0.46-58 1.47 0.44 14 0.58-33 1.92 0.89 16 0.68-6 2.47 1.3 18 0.63 7 3.03 1.78 20 0.68 33 3.24 1.87 22 0.63 50 3.43 1.81 24 0.67 92 3.65 1.56 26 0.72 120 3.86 1.16

EPA080A High Efficiency Heterojunction Power FET +27.5m TYPICAL OUTPUT POWER 9.5 TYPICAL POWER GAIN AT 18GHz 0.3 X 800 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 20 ma PER BIN RANGE 40 510 50 116 D D S G S G S 48 100 340 95 50 80 ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE Output Power at 1 Compression f=12ghz 26.0 27.5 Vds=8V, Ids=50% Idss f=18ghz 27.5 Gain at 1 Compression f=12ghz 10.5 12.5 Vds=8V, Ids=50% Idss f=18ghz 9.5 Power Added Efficiency at 1 Compression Vds=8V, Ids=50% Idss f=12ghz 45 Idss Saturated Drain Current Vds=3V, Vgs=0V 130 240 320 ma Gm Transconductance Vds=3V, Vgs=0V 160 260 ms Vp Pinch-off Voltage Vds=3V, Ids=2.5mA -1.0-2.5 V BVgd Drain Breakdown Voltage Igd=1.0mA -11-15 V BVgs Source Breakdown Voltage Igs=1.0mA -7-14 V m % Rth Thermal Resistance (Au-Sn Eutectic Attach) 55 o C/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 260mA Igsf Forward Gate Current 40mA 7mA Pin Input Power 25m @3 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 2.5W 2.1W

EPA080A DATS SHEET High Efficiency Heterojunction Power FET S-PARAMETERS 8V, 1/2 Idss FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.929-63.0 13.172 141.6 0.035 56.2 0.478-36.9 21.0 0.892 151.7 1.076-6.7 0.060 1.8 0.546-173.4 2.0 0.885-102.9 9.639 117.9 0.051 36.9 0.380-60.7 22.0 0.893 148.0 1.015-11.2 0.060 1.7 0.566-176.3 3.0 0.863-125.7 7.251 102.8 0.056 26.6 0.319-75.8 23.0 0.898 144.4 0.958-16.1 0.061 0.9 0.587-179.8 4.0 0.856-140.4 5.741 91.7 0.058 20.1 0.290-86.4 24.0 0.895 140.9 0.909-21.0 0.062 1.6 0.606 176.9 5.0 0.842-153.1 4.704 82.3 0.059 15.5 0.288-95.4 25.0 0.908 138.0 0.862-25.6 0.065 2.7 0.626 172.3 6.0 0.843-160.5 3.991 74.6 0.059 12.5 0.288-102.3 26.0 0.905 136.3 0.814-30.3 0.068 2.1 0.644 167.6 7.0 0.848-166.4 3.455 67.8 0.059 10.2 0.293-108.2 27.0 0.916 133.9 0.785-34.5 0.070 2.1 0.665 163.6 8.0 0.853-171.0 3.045 61.6 0.059 8.2 0.304-114.3 28.0 0.924 133.4 0.745-39.2 0.074 2.6 0.687 158.0 9.0 0.857-174.5 2.701 55.8 0.058 7.2 0.315-120.2 29.0 0.919 133.0 0.700-42.7 0.075 0.6 0.704 153.5 10.0 0.866-177.6 2.437 50.3 0.056 5.6 0.331-125.3 30.0 0.928 133.6 0.675-46.9 0.079 0.1 0.721 149.1 11.0 0.867 179.4 2.212 44.8 0.056 5.4 0.353-130.8 31.0 0.936 133.6 0.644-50.4 0.079 0.4 0.736 145.4 12.0 0.874 176.9 2.011 39.2 0.055 5.0 0.375-136.0 32.0 0.931 133.2 0.616-54.2 0.080-0.5 0.749 141.4 13.0 0.877 174.3 1.842 34.1 0.054 3.9 0.398-140.7 33.0 0.918 130.9 0.574-58.3 0.081-1.4 0.753 137.7 14.0 0.883 171.6 1.698 29.1 0.053 3.6 0.423-145.0 34.0 0.922 129.9 0.547-61.2 0.081-1.4 0.771 135.0 15.0 0.884 168.8 1.567 23.8 0.053 4.1 0.445-148.4 35.0 0.925 127.6 0.518-64.5 0.080-2.1 0.779 132.2 16.0 0.886 166.1 1.457 18.7 0.053 3.4 0.466-152.1 36.0 0.935 125.9 0.494-67.2 0.088-6.5 0.784 129.7 17.0 0.885 163.7 1.362 13.9 0.054 2.5 0.487-155.5 37.0 0.929 122.6 0.478-70.2 0.087-7.8 0.790 126.3 18.0 0.885 160.2 1.287 8.8 0.055 2.3 0.501-158.3 38.0 0.929 119.1 0.465-75.0 0.094-14.2 0.797 122.8 19.0 0.883 156.3 1.226 3.3 0.057 1.5 0.514-161.9 39.0 0.919 114.3 0.446-79.0 0.091-21.0 0.797 119.5 20.0 0.885 152.0 1.166-2.2 0.059 0.6 0.524-165.7 40.0 0.913 109.5 0.439-83.8 0.096-29.3 0.799 115.9 Note: The data included 0.7 mils diameter Au bonding wires: 2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 7 mils each.

40 180 Min. (All Leads) 70 EPA080A-70 High Efficiency Heterojunction Power FET NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +25.5m TYPICAL OUTPUT POWER 7.0 TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY S D G 20 S 44 19 4 ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE Output Power at 1 Compression f=12ghz 24.0 25.5 Vds=5V, Ids=50% Idss Gain at 1 Compression f=12ghz 5.5 7.0 Vds=5V, Ids=50% Idss Power Added Efficiency at 1 Compression Vds=5V, Ids=50% Idss f=12ghz 40 Idss Saturated Drain Current Vds=3V, Vgs=0V 130 240 320 ma Gm Transconductance Vds=3V, Vgs=0V 160 260 ms Vp Pinch-off Voltage Vds=3V, Ids=2.5mA -1.0-2.5 V BVgd Drain Breakdown Voltage Igd=1.0mA -10-15 V BVgs Source Breakdown Voltage Igs=1.0mA -6-14 V Rth Thermal Resistance 135 * o C/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 8V 5V Vgs Gate-Source Voltage -5V -3V Ids Drain Current Idss 185mA Igsf Forward Gate Current 40mA 7mA Pin Input Power 23m @ 3 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 1.1W 0.9W m %

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