技术信息/TechnicalInformation AHB7CL 初步数据/PreliminaryData CES = 7 IC nom = A / ICRM = A 典型应用 中压变流器 TypicalApplications MediumoltageConverters 电气特性 低CEsat Tvjop= C ElectricalFeatures LowCEsat Tvjop= C 机械特性 绝缘的基板 标准封装 MechanicalFeatures IsolatedBasePlate StandardHousing ModuleLabelCode BarcodeCode8 DMX-Code preparedby:mk dateofpublication:-9-7 approvedby:mk revision:. ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) - - -9 - -
技术信息/TechnicalInformation AHB7CL 初步数据/PreliminaryData IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedalues 集电极 发射极电压 Collector-emittervoltage CES 连续集电极直流电流 ContinuousDCcollectorcurrent TC = C, Tvj max = C 集电极重复峰值电流 Repetitivepeakcollectorcurrent tp = ms 总功率损耗 Totalpowerdissipation TC = C, Tvj max = C 栅极 发射极峰值电压 Gate-emitterpeakvoltage 7 IC nom A ICRM A Ptot W GES +/- 特征值/Characteristicalues min. typ. max.,9,,,8, 集电极 发射极饱和电压 Collector-emittersaturationvoltage IC = A, GE = IC = A, GE = 栅极阈值电压 Gatethresholdvoltage IC =, ma, CE = GE, 栅极电荷 Gatecharge GE = -... + QG, µc 内部栅极电阻 Internalgateresistor RGint 8, Ω 输入电容 Inputcapacitance f = MHz,, CE =, GE = Cies, nf 反向传输电容 Reversetransfercapacitance f = MHz,, CE =, GE = Cres, nf 集电极-发射极截止电流 Collector-emittercut-offcurrent CE = 7, GE =, ICES, ma 栅极-发射极漏电流 Gate-emitterleakagecurrent CE =, GE =, IGES na CE sat GEth, 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = A, CE = 9 GE = ± RGon =, Ω td on,, 上升时间(电感负载) Risetime,inductiveload IC = A, CE = 9 GE = ± RGon =, Ω tr,, 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = A, CE = 9 GE = ± RGoff =, Ω td off,, 下降时间(电感负载) Falltime,inductiveload IC = A, CE = 9 GE = ± RGoff =, Ω tf,9, 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = A, CE = 9, LS = nh GE = ±, di/dt = 9 A/ RGon =, Ω Eon 9,, 关断损耗能量(每脉冲 Turn-offenergylossperpulse IC = A, CE = 9, LS = nh GE = ±, du/dt = / RGoff =, Ω Eoff,, 短路数据 SCdata GE, CC = CEmax = CES -LsCE di/dt A 结 外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 外壳 散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λpaste=w/(m K)/λgrease=W/(m K) RthCH 在开关状态下温度 Temperatureunderswitchingconditions tp, ISC Tvj op preparedby:mk dateofpublication:-9-7 approvedby:mk revision:., K/W, - K/W C
技术信息/TechnicalInformation AHB7CL 初步数据/PreliminaryData 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedalues 反向重复峰值电压 Repetitivepeakreversevoltage RRM 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tp = ms It-值 I²t-value R =, tp = ms, 7 IF A IFRM A I²t 9 A²s 特征值/Characteristicalues min. typ. max.,8,9, 正向电压 Forwardvoltage IF = A, GE = IF = A, GE = 反向恢复峰值电流 Peakreverserecoverycurrent IF = A, - dif/dt = 9 A/ (Tvj= C) R = 9 GE = - IRM 7 A A 恢复电荷 Recoveredcharge IF = A, - dif/dt = 9 A/ (Tvj= C) R = 9 GE = - Qr,, µc µc 反向恢复损耗 每脉冲 Reverserecoveryenergy IF = A, - dif/dt = 9 A/ (Tvj= C) R = 9 GE = - Erec, 7, F 结 外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 外壳 散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λpaste=w/(m K)/λgrease=W/(m K) RthCH 在开关状态下温度 Temperatureunderswitchingconditions Tvj op preparedby:mk dateofpublication:-9-7 approvedby:mk revision:.,8 K/W, - K/W C
技术信息/TechnicalInformation AHB7CL 初步数据/PreliminaryData 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = Hz, t = min. ISOL, k Cu 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 基本绝缘(class,IEC) basicinsulation(class,iec) AlO 爬电距离 Creepagedistance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal,, mm 电气间隙 Clearance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal,, mm 相对电痕指数 Comperativetrackingindex CTI 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TC= C,每个开关/perswitch 储存温度 Storagetemperature nh RCC'+EE', mω Tstg - C, Nm, Nm M, 端子联接扭距 Terminalconnectiontorque 螺丝M根据相应的应用手册进行安装 ScrewM-Mountingaccordingtovalidapplicationnote M, G dateofpublication:-9-7 approvedby:mk revision:. max. 螺丝M根据相应的应用手册进行安装 ScrewM-Mountingaccordingtovalidapplicationnote preparedby:mk typ. LsCE 模块安装的安装扭距 Mountingtorqueformodulmounting 重量 Weight > min. g
技术信息/TechnicalInformation AHB7CL 初步数据/PreliminaryData 输出特性IGBT,逆变器 典型) outputcharacteristicigbt,inverter(typical) IC=f(CE) GE= 输出特性IGBT,逆变器 典型) outputcharacteristicigbt,inverter(typical) IC=f(CE) Tvj= C 9 9,,,,, CE [],,,, 传输特性IGBT,逆变器(典型) transfercharacteristicigbt,inverter(typical) IC=f(GE) CE=,,,,,, CE [],,,, 8 9 E [] 8 7 Eon, Eoff,, 开关损耗IGBT,逆变器 典型) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) GE=±,RGon=.Ω,RGoff=.Ω,CE=9 IC [A] GE = GE = GE = GE = GE = 9 GE = 8 IC [A] IC [A] 8 9 GE [] preparedby:mk dateofpublication:-9-7 approvedby:mk revision:. IC [A]
技术信息/TechnicalInformation AHB7CL 初步数据/PreliminaryData 开关损耗IGBT,逆变器 典型) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) GE=±,IC=A,CE=9 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) Eon, Eoff, ZthJC : IGBT ZthJC [K/W] E [], i: ri[k/w]:,,88,, τi[s]:,,,, RG [Ω],, 开关损耗二极管,逆变器 典型) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=.Ω,CE=9 Erec, 7 9 8 E [] IF [A], t [s] 正向偏压特性二极管,逆变器 典型) forwardcharacteristicofdiode,inverter(typical) IF=f(F) 9,,,,, F [],,, preparedby:mk dateofpublication:-9-7 approvedby:mk revision:. IF [A]
技术信息/TechnicalInformation AHB7CL 初步数据/PreliminaryData 开关损耗二极管,逆变器 典型) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=A,CE=9 瞬态热阻抗二极管,逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) Erec, ZthJC : Diode 8 ZthJC [K/W] E [], 8 i: ri[k/w]:,8,,7,97 τi[s]:,,,, RG [Ω],,,, t [s] preparedby:mk dateofpublication:-9-7 approvedby:mk revision:. 7
技术信息/TechnicalInformation AHB7CL 初步数据/PreliminaryData 接线图/Circuitdiagram 封装尺寸/Packageoutlines screwing depth max. 9mm plug in depth max. 7mm,8 Ø, Ø8, 9, 8, M 9, preparedby:mk dateofpublication:-9-7 approvedby:mk revision:. 8
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