CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. D1 D2 The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. RFin RFout UMS Main Features Broadband performance 6-17GHz 1.8dB noise figure 26dBm 3 rd order intercept point 17dBm power at 1dB compression 21dB gain Low DC power consumption Main Characteristics Temp = +25 C, Vd1=Vd2= +4V Pads: P1, N2=GND 24,0 22,0,0 18,0 16,0 14,0 12,0 10,0 8,0 6,0 4,0 2,0 0,0 Gain P1 P2 N2 NF 4,00 6,00 8,00 10,00 12,00 14,00 16,00 18,00 Symbol Parameter Min Typ Max Unit NF Noise figure 1.8 2 db G Gain 19 21 db IP3 3rd order intercept point 26 dbm ESD Protections : Electrostatic discharge sensitive device observe handling precautions! Ref. : DSCHA36666159-08 Jun 06 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46-91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3666 6-17GHz Low Noise Amplifier Electrical Characteristics Temp = +25 C, Pads: P1,N2 = GND (1) Symbol Parameter Min Typ Max Unit Fop Operating frequency range 6 17 GHz G Gain (2) 19 21 db G Gain flatness ±0.5 db NF Noise figure (2) 1.8 2 db IS11I Input return loss (2) 2.5:1 2.7:1 db IS22I Ouput return loss (2) 2.0:1 2.2:1 db IP3 3rd order intercept point (2) 26 dbm P1dB Output power at 1dB gain comp.(2) (3) 15 17 dbm Vd Drain bias voltage 4 V Id Drain bias current 75 80 86 ma (1) The other pads are not connected (2) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. (3) P1dB can be increased (+0.5dBm) when P1 & P2 are connected and N2 non connected. In this case Id is around 85mA Absolute Maximum Ratings (1) Temp = +25 C Symbol Parameter Values Unit Vd Drain bias voltage 4.5 V Pin RF input power 10 dbm Top Operating temperature range (chip backside) -40 to +85 C Tj Junction temperature 175 C Tstg Storage temperature range -55 to +125 C (1) Operation of this device above anyone of these paramaters may cause permanent damage. Ref. : DSCHA36666159-08 Jun 06 2/8 Specifications subject to change without notice
6-17GHz Low Noise Amplifier CHA3666 Typical Scattering Parameters ( On wafer Sij measurements ) Bias Conditions : Vd1=Vd2= +4V Pads: P1, N2 = GND. Freq dbs11 PhS11 dbs12 PhS12 dbs21 PhS21 dbs22 PhS22 GHZ db db db db 0,5-0,12-12,41-58,07-75,30-55,39 74,95-0,16-11,79 1,0-0,15-25,18-66,93 158,40-59,74 86,43-0,19-23,89 1,5-0,21-38,83-68,19-42,37-55,53-2,66-0,26-37,09 2,0-0,31-54,17-70,23 132,40-28,46 25,79-0,62-51,84 2,5-0,53-72,61-66,09-174,80-11,74 2,26-1,03-68,34 3,0-0,99-96,30-58,45 112,50 1,55-54,65-2,92-84,65 3,5-2,07-129, -57,93 51,75 9,78-105,90-5,03-92,78 4,0-4,44 179,00-53,52-50,92 15,92-157, -7,10-98,70 4,5-8,15 104, -48,40-119,10 19,62 149,90-8,51-98,52 5,0-9,23 35,18-45,69-159,90 21,13 103,90-9,15-100,90 5,5-9,21-2,42-43,80 169,70 21,84 65,87-9,80-104, 6,0-9,07 -,75-42,66 145,70 22,14 34,89-10,53-107,90 6,5-8,93-30,17-40,68 125,10 22,22 6,85-10,91-113, 7,0-8,37-38,97-40,46 107, 22,22-17,33-11,49-119,50 7,5-7,99-47,52-39,16 88,92 22,19-39,18-11,76-128,70 8,0-7,87-56,29-38,17 75,16 22,23-59,70-12,47-141,30 8,5-7,75-63,59-38,58 62,12 22,19-79,40-13,87-154,90 9,0-7,54-71,38-37,51 42,64 22,08-97,96-15,57-168,10 9,5-7,50-79,76-37,26 36,06 22,03-115,30-17,57 176,80 10,0-7,55-88,86-36,90 26,77 21,97-132,00 -,19 157,60 10,5-7,77-97,01-36,76 12,22 21,93-148,40-23,18 132,40 11,0-8,11-105,90-36,05-1,08 21,90-164,10-25,38 96,42 11,5-8,53-114,50-35,65-13,41 21,88-179,90-26,39 54, 12,0-8,98-122,60-35,55-24,05 21,86 164,70-24,69 16,73 12,5-9,62-130,10-35,31-35,87 21,82 149,40-22,43-8,28 13,0-10,22-135,40-35,13-50, 21,75 134,30 -,23-25,56 13,5-10,60-143,40-35,13-60,43 21,72 119,10-19,67-36,11 14,0-11,07-153,70-34,80-76,43 21,74 104,00-19,22-45,27 14,5-11,34-160,80-34,90-81,33 21,73 88,96-18, -51,93 15,0-11,28-175, -36,47-95, 21,84 73,08-17,69-63,45 15,5-11,14 164,00-36,88-112,40 21,64 55,53-18,61-77,33 16,0-11,46 146,10-37,33-119,70 21,52 41,16-17,96-72,90 16,5-10,91 125,00-38,29-129,70 21,68 24,37-16,63-75,48 17,0-10,01 100,10-38,86-155,40 21,60 5,25-14,95-83,86 17,5-9,02 72,69-41,04-161,40 21,15-14,81-13,51-102,40 18,0-8,00 45,92-42,41-173,60,44-35,47-12,40-1,70 18,5-7,75 21,28-45,21-161,70 19,26-51,39-13,47-130,90 19,0-7,02 0,74-47,61-177,80 18,39-69,18-11,57-142,30 19,5-6,59-18,52-50,99-127,80 17,14-86,07-10,58-160,60,0-6,38-35,21-45,57-104, 15,75-101,50-9,99-176,80 Ref. : DSCHA36666159-08 Jun 06 3/8 Specifications subject to change without notice
CHA3666 6-17GHz Low Noise Amplifier Typical on wafer Measured Performance Temp = +25 C Vd1=Vd2= +4V Pads: P1,N2 = GND- Typical Id=80mA Measurements on wafer (without bonding wires at the RF ports) S parameters versus frequency Sij (db) 25 15 10 5 0-5 -10-15 - -25-30 S21 S11 S22 2 4 6 8 10 12 14 16 18 Frequency (GHz) NF versus frequency Noise Figure (db) 6 5,5 5 4,5 4 3,5 3 2,5 2 1,5 1 0,5 0 4 6 8 10 12 14 16 18 Frequency (GHz) Ref. : DSCHA36666159-08 Jun 06 4/8 Specifications subject to change without notice
6-17GHz Low Noise Amplifier CHA3666 Output power at 1dB compression versus frequency Pout -1dB (dbm) 19,5 19 18,5 18 17,5 17 16,5 16 15,5 15 14,5 14 13,5 13 12,5 12 *P1=P2=grounded **P1=N2=grounded *typical consumption : 85mA ** typical consumption : 80mA 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Ref. : DSCHA36666159-08 Jun 06 5/8 Specifications subject to change without notice
CHA3666 6-17GHz Low Noise Amplifier C/I3 versus output power @configuration: P1_P2 grounded 60 50 40 C/I3(dB) 30 10 0 CI3-6GHZ CI3-7GHZ CI3-8GHZ CI3-9GHZ CI3-10GHZ CI3-12GHZ CI3-14GHZ CI3-16GHZ CI3-17GHZ CI3-18GHZ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Single Output power(dbm) 30 IP3 versus output power @configuration P1_P2 grounded Output IP3 (dbm) 28 26 24 22 18 16 14 12 10 IP3_6GHz IP3_7GHz IP3_8GHz IP3_9GHz IP3_10GHz IP3_12GHz IP3_14GHz IP3_16GHz IP3_17GHz IP3_18GHz 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Single output power (dbm) Ref. : DSCHA36666159-08 Jun 06 6/8 Specifications subject to change without notice
6-17GHz Low Noise Amplifier CHA3666 Chip Assembly and Mechanical Data Vd1, Vd2 DC drain supply feed 10nF 1pF 1pF P1 N2 P2 Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bonding pad position DC Pads size: 100/100µm, Chip thickness: 100µm Ref. : DSCHA36666159-08 Jun 06 7/8 Specifications subject to change without notice
CHA3666 6-17GHz Low Noise Amplifier Chip Biasing options This chip is self-biased, and flexibility is provided by the access to number of pads. The internal DC electrical schematic is given in order to use these pads in a safe way. Vd1 Vd2 1.5K 3.1K 40 2.5 0.3K 0.3K RFin RFout 90 90 8 P1 P2 N2 Two standard biasing : Low Noise and low consumption : Low Noise and higher output power Vd1=Vd2 = 4V and P1, N2 grounded. P2 pads non connected ( NC). Idd = 80mA & Pout-1dB = 17dBm Typical. Vd1=Vd2 = 4V and P1, P2 grounded. N2 pads non connected ( NC). Idd = 85mA & Pout-1dB = 17.5dBm Typical. Ordering Information Chip form : CHA3666-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA36666159-08 Jun 06 8/8 Specifications subject to change without notice
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