Databook

Transcription

1 SUNSTAR 商斯达实业集团是集研发 生产 工程 销售 代理经销 技术咨询 信息服务等为一体的高科技企业, 是专业高科技电子产品生产厂家, 是具有 10 多年历史的专业电子元器件供应商, 是中国最早和最大的仓储式连锁规模经营大型综合电子零部件代理分销商之一, 是一家专业代理和分銷世界各大品牌 IC 芯片和電子元器件的连锁经营綜合性国际公司 在香港 北京 深圳 上海 西安 成都等全国主要电子市场设有直属分公司和产品展示展销窗口门市部专卖店及代理分销商, 已在全国范围内建成强大统一的供货和代理分销网络 我们专业代理经销 开发生产电子元器件 集成电路 传感器 微波光电元器件 工控机 /DOC/DOM 电子盘 专用电路 单片机开发 MCU/DSP/ARM/FPGA 软件硬件 二极管 三极管 模块等, 是您可靠的一站式现货配套供应商 方案提供商 部件功能模块开发配套商 专业以现代信息产业 ( 计算机 通讯及传感器 ) 三大支柱之一的传感器为主营业务, 专业经营各类传感器的代理 销售生产 网络信息 科技图书资料及配套产品设计 工程开发 我们的专业网站 中国传感器科技信息网 ( 全球传感器数据库 ) 服务于全球高科技生产商及贸易商, 为企业科技产品开发提供技术交流平台 欢迎各厂商互通有无 交换信息 交换链接 发布寻求代理信息 欢迎国外高科技传感器 变送器 执行器 自动控制产品厂商介绍产品到中国, 共同开拓市场 本网站是关于各种传感器 - 变送器 - 仪器仪表及工业自动化大型专业网站, 深入到工业控制 系统工程计测计量 自动化 安防报警 消费电子等众多领域, 把最新的传感器 - 变送器 - 仪器仪表买卖信息, 最新技术供求, 最新采购商, 行业动态, 发展方向, 最新的技术应用和市场资讯及时的传递给广大科技开发 科学研究 产品设计人员 本网站已成功为石油 化工 电力 医药 生物 航空 航天 国防 能源 冶金 电子 工业 农业 交通 汽车 矿山 煤炭 纺织 信息 通信 IT 安防 环保 印刷 科研 气象 仪器仪表等领域从事科学研究 产品设计 开发 生产制造的科技人员 管理人员 和采购人员提供满意服务 我公司专业开发生产 代理 经销 销售各种传感器 变送器 敏感元器件 开关 执行器 仪器仪表 自动化控制系统 : 专门从事设计 生产 销售各种传感器 变送器 各种测控仪表 热工仪表 现场控制器 计算机控制系统 数据采集系统 各类环境监控系统 专用控制系统应用软件以及嵌入式系统开发及应用等工作 如热敏电阻 压敏电阻 温度传感器 温度变送器 湿度传感器 湿度变送器 气体传感器 气体变送器 压力传感器 压力变送 称重传感器 物 ( 液 ) 位传感器 物 ( 液 ) 位变送器 流量传感器 流量变送器 电流 ( 压 ) 传感器 溶氧传感器 霍尔传感器 图像传感器 超声波传感器 位移传感器 速度传感器 加速度传感器 扭距传感器 红外传感器 紫外传感器 火焰传感器 激光传感器 振动传感器 轴角传感器 光电传感器 接近传感器 干簧管传感器 继电器传感器 微型电泵 磁敏 ( 阻 ) 传感器 压力开关 接近开关 光电开关 色标传感器 光纤传感器 齿轮测速传感器 时间继电器 计数器 计米器 温控仪 固态继电器 调压模块 电磁铁 电压表 电流表等特殊传感器 同时承接传感器应用电路 产品设计和自动化工程项目 欢迎索取免费详细资料 设计指南和光盘 ; 产品凡多, 未能尽录, 欢迎来电查询 更多产品请看本公司产品专用销售网站 : 商斯达中国传感器科技信息网 : 商斯达工控安防网 : 商斯达电子元器件网 : 商斯达微波光电产品网 : 商斯达消费电子产品网 :// 商斯达军工产品网 : 商斯达实业科技产品网 :// 传感器销售热线 : 地址 : 深圳市福田区福华路福庆街鸿图大厦 1602 室电话 : 传真 : (0) MSN: [email protected] 邮编 : [email protected] QQ: 深圳赛格展销部 : 深圳华强北路赛格电子市场 2583 号电话 : 技术支持 :

2 FUTURE PRODUCTS I.) 3 rd Q to 4 th Q of 2000 A.) MMICs: 1. EMA103X, 104X, 105X: 7-8.5, 5.5-7, 4-5.5GHz, 2W, 15 gain PA with low IMD. 2. EMA204X: 17-20GHz, 1W, 15 gain PA with low IMD. 3. EMA303X: 17-27GHz, 20m, 22 gain Amp. 4. EMA501X: 37-41GHz, 20m, 22 gain Amp. B.) Internally Matched Power FETs: 1. 2W for GHz (EIA2021-2P) in flange packages. 2. 5W/10W for , , , , GHz in flange packages. 3. 4W for , , , and GHz in flange packages. C.) FETs: 1. More 10V biased low distortion GaAs power FETs (EFC series). 2. High gain low distortion GaAs power FETs (EFB series). 3. High gain hetero-junction power FETs (EPC series). 4. More power FETs with via-hole source grounding. 5. More FETs in low cost surface mount plastic packages: 85mil-uX, SOT23 and SOT EH series hetero-junction power FETs with high linearity, breakdown and output power. II.) 2001 and Beyond A.) MMICs: GHz, 30m PA GHz, 30m PA GHz, 30m PA GHz, 33m PA GHz, 24-36m PA GHz, LN to PA. B.) Internally Matched Power FETs: W, 10-20GHz W, 1-10GHz. C.) Enhanced Mode Power FETs (Single Bias) D.) HBTs

3 CURRENT PRODUCTS excelics.doc 5/00 I.) Super Low Noise High Gain Hetero-junction FETs: - Chips (non via-hole) - 70-mil ceramic packages NF & GHz II.) High Efficiency Hetero-junction Power FETs: - Chips (non via-hole or via-hole) - 70-mil ceramic & 100-mil/170-mil flange ceramic packages - SOT23 and SOT89 surface mount plastic packages and application circuits W output power over GHz III.) Low Distortion GaAs Power FETs: - Chips (non via-hole or via-hole) - 70-mil ceramic & 100-mil/170-mil flange ceramic packages - SOT89 surface mount plastic packages and application circuits W output power over GHz IV.) Internally Matched Power FETs: , , , , , , , , and GHz m P-1, 37-49m OIP3, G-1, and 20-30% PAE - non-hermetic metal flange packages V.) MMICs: , 22-26, and 26-32GHz low noise and power amplifiers m P-1, gain, :1 Input VSWR, and 2-3:1 output VSWR GHz sub-harmonically pumped mixer with LO amplifier - RF: 20-32GHz, LO: 10-15GHz, IF: DC-5GHz, 11 conversion loss, 8m LO drive - Chips

4 EXCELICS PRODUCT LIST-I (Super Low Noise High Gain Heterojunction FETs) DEVICE TYPE SIZE CHIP SIZE W(Gate)/Finger Bias N.F. * Ga * Freq. Idss Bvgd** Freq. Range Remark um 2 um 2 um GHz ma V A.) Chips: EPB018A5 0.3x X V, 15mA Up to 65 GHz P-1 + =15m EPB018A7 0.3X X V, 15mA Up to 65 GHz P-1 + =15m EPB018A9 0.3X X V, 15mA Up to 65 GHz P-1 + =15m EPB025A 0.3x x V, 15 ma Up to 45 GHz P-1 + =15m B.) Non-hermetic Low Cost 70 mil Packages: EPB018A x V, 15mA Up to 30 GHz P-1 + =15m EPB018A x V, 15mA Up to 30 GHz P-1 + =15m EPB018A x V, 15 ma Up to 30 GHz P-1 + =15m EPB025A x V, 15 ma Up to 30 GHz P-1 + =15m Note: *: Typical Values **: Typical Values measured at Ig=10 ua + : Typical Values measured at 3V/25mA

5 (Super Low Noise High Gain Heterojunction FETs) Excelics Filtronic NEC Fujitsu Mitsubishi Celeritrk Stanford HP Toshiba EPB018A5 NE32400 FHX13X(14X,45X) MGFC4418D/E EPB018A7 NE32400 FHX04X(14X) MGFC4427D(4417D) EPB018A9 LP7512 NE33200 FHX34X(04X,05X,06X) MGFC4424D(4414E) CF JS8905-AS EPB025A LP7512 NE33200 FHX34X(04X,05X,06X) MGFC4414E(4424D) JS8901-AS EPB018A5-70 NE32584C FHX13LG MGF4919G(4918E, 4418D/E) SPF-1676 ATF36077 EPB018A7-70 NE32484A FHX04LG(14LG) MGF4916G(4918E, 4318E) CFA0103L1 SPF-1576 EPB018A9-70 LP7512-P70 NE33284A(42484A) FHX05LG MGF4914E(4714CP, 4314E) CFA0103L2/L3 SPF-2086 EPB025A-70 LP7512-P70 NE33284A(42484A) FHX05LG MGF4914E(4714CP, 4314E) CFA0103L2/L3 SPF-2086

6 EXCELICS PRODUCT LIST-II (High Efficiency Heterojunction Power FETs) DEVICE TYPE SIZE CHIP SIZE W(Gate)/Finger Bias P-1* G-1* Freq. Idss BVgd** Freq. Range Remark A.) Chips: um 2 um 2 um m GHz ma V GHz EPA018A 0.3x x V, 0.5 Idss Up to NF@12GHz EPA025A 0.3x x V, 0.5 Idss Up to 45 EPA030C 0.3x x V, 0.5 Idss Up to 50 EPA040A 0.3x x V, 0.5 Idss Up to 45 EPA060A 0.3x x V, 0.5 Idss Up to 45 EPA060B/EPA060BV 0.3x x V, 0.5 Idss / Up to 40/45 V: Via-hole EPA080A 0.3x x V, 0.5 Idss Up to 35 EPA090A 0.3x x V, 0.5 Idss Up to 40 EPA120A 0.3x x V, 0.5 Idss Up to 30 EPA120B/EPA120BV 0.3x x V, 0.5 Idss / Up to 30/40 V: Via-hole EPA120E 0.3x x V, 0.5 Idss Up to 40 EPA160A 0.3x x V, 0.5 Idss Up to 30 EPA160B 0.3x x V, 0.5 Idss Up to 26 EPA240B/EPA240BV 0.3x x V, 0.5 Idss / Up to 26/30 V: Via-hole EPA480B/EPA480BV*** 0.4x x V, 0.5 Idss / Up to 18/30 V: Via-hole EPA240D 0.4x x V, 0.5 Idss Up to 15 EPA480C 0.4x x V, 0.5 Idss Up to 12 EPA720A*** 0.4x x V, 0.5 Idss Up to 10 EPA960B*** 0.4x x V, 0.5 Idss Up to 10 EPA1200A*** 0.4x x V, 0.5 Idss Up to 10 B.) Non-hermetic Low Cost 70 mils Packages: EPA018A x V, 0.5 Idss Up to NF@12GHz EPA025A x V, 0.5 Idss Up to 26 EPA040A x V, 0.5 Idss Up to 26 EPA060B x V, 0.5 Idss Up to ,NF;28/31m,IP3@2GHz EPA080A x V, 0.5 Idss Up to 20 C.) Hermetic 100 mils Ceramic Flange Packages: EPA080A-100F 0.3x V, 0.5 Idss Up to 18 EPA120B-100F 0.3x V, 0.5 Idss Up to 18 EPA160B-100F 0.3x V, 0.5 Idss Up to 16 EPA240B-100F 0.3x V, 0.5 Idss Up to 15 D.) Surface Mount Plastic Packages: EPA018A-SOT23 0.3x V, 30mA Up to ,NF;27m,IP3@2GHz EPA240D-SOT89 0.4x V, 350mA Up to 8 0.4,NF;38/40m,IP3@2GHz EPA480C-SOT89 0.4x V, 750mA Up to 6 0.5,NF;41/43m,IP3@2GHz Note: *: Typical Values **: Typical Values measured at Ig=1mA/mm ***: 25um GaAs + 25um PHS(Plated Gold Heat-Sink)

7 (High Efficiency Heterojunction Power FETs ) Excelics Filtronic Fujitsu Celeritek HP Stanford NEC Toshiba EPA018A LPD200/LP7612 FLR016XP/XV CF EPA025A LP7612 FLR016XP/XV CF JS8892-AS EPA040A LP6836 FLR026XP/XV CF JS8893-AS EPA060B/BV LP6872/LP750 CF NE JS8894-AS EPA080A LP6872/LP750 FLR056XV EPA090A LP6872/LP750 FLR056XV EPA120B/BV NE EPA160A LP1500 FLR106XV EPA160B LP1500 FLR106XV EPA240B/BV LP3000 FLR106XV NE EPA018A-70 LPD200/LP SPF-2076 EPA025A-70 LPD200/LP SPF-2076 EPA040A-70 LP ATF35143 EPA060B-70 LP6872/LP CFB0301 ATF34143 NE34018 EPA080A-70 LP6872/LP ATF34143 EPA018A-SOT23 LP7612-SOT23 ATF36163 EPA240D-SOT89 LP1500/3000-SOT89 ATF33143 EPA480C-SOT89 LP3000-SOT89

8 EXCELICS PRODUCT LIST-III (Low Distortion GaAs Power FETs) DEVICE TYPE SIZE CHIP SIZE W(Gate)/Finger Bias P-1* G-1* Freq. Idss BVgd** Freq. Range Remark um 2 um 2 um m GHz ma V GHz A.) Chips: EFA018A 0.3x x V, 0.5 Idss Up to NF@12GHz EFA025A 0.3x x V, 0.5 Idss Up to 30 EFA025AL 0.3x x V, 0.5 Idss Up to 30 EFA040A 0.3x x V, 0.5 Idss Up to 30 EFA060B/EFA060BV 0.3x x V, 0.5 Idss / Up to 30/30 V: Via-hole EFC060B 0.3x x V, 0.5 Idss Up to 30 EFA080A 0.3x x V, 0.5 Idss Up to 30 EFA120A 0.3x x V, 0.5 Idss Up to 26 EFA120B/EFA120BV 0.3x x V, 0.5 Idss / Up to 23/30 V: Via-hole EFC120B 0.3x x V, 0.5 Idss Up to 23 EFA160A 0.3x x V, 0.5 Idss Up to 26 EFA240B/EFA240BV 0.3x x V, 0.5 Idss / Up to 23/30 V: Via-hole EFC240B 0.3x x V, 0.5 Idss Up to 23 EFA480B*** 0.3x x V, 0.5 Idss Up to 15 EFA240D 0.5x x V, 0.5 Idss Up to 12 EFC240D 0.3x x V, 0.5 Idss Up to 12 EFA480C 0.5x x V, 0.5 Idss Up to 10 EFC480C 0.5x x V, 0.5 Idss Up to 10 EFA720A*** 0.5x x V, 0.5 Idss Up to 10 EFA960B*** 0.5x x V, 0.5 Idss Up to 10 EFA1200A*** 0.5x x V, 0.5 Idss Up to 10 B.) Non-hermetic Low Cost 70 mils Ceramic Packages: EFA018A x V, 0.5 Idss Up to NF@12GHz EFA025A x V, 0.5 Idss Up to 26 EFA040A x V, 0.5 Idss Up to 26 EFA060B x V, 0.5 Idss Up to ,NF;26/38m,IP3@2GHz EFA080A x V, 0.5 Idss Up to 18 C.) Hermetic 100 mils Ceramic Flange Packages: EFA060B-100F 0.3x V, 0.5 Idss Up to 18 Also available EFC060B-100F EFA080A-100F 0.3x V, 0.5 Idss Up to 18 EFA120B-100F 0.3x V, 0.5 Idss Up to 16 Also available EFC120B-100F EFA240B-100F 0.3x V, 0.5 Idss Up to 12 Also available EFC240B-100F D.) Surface Mount Plastic Packages: EFA240D-SOT89 0.5x V, 350mA Up to 6 0.7,NF;36/48m,IP3@2GHz EFA480C-SOT89 0.5x V, 750mA Up to 5 0.8,NF;39/48m,IP3@2GHz Note: + : IP3 is typical 13 higher than P-1 *: Typical Values **: Typical Values measured at Ig=1mA/mm ***: 25um GaAs + 25um PHS(Plated Gold Heat-Sink)

9 (Low Distortion GaAs Power FETs) Excelics MWT Mitsubishi Celeritek NEC Fujitsu Stanford HP Toshiba EFA018A MWT-4 MGFC1403/1423,25 CF004-01/-02 NE700/710/760 FLR016/FLK017 EFA025A/AL MWT-7/-3 MGFC1403/1423,25 CF001-01/-02 NE700/710/760 FLK017/FSX017 ATF-13100/ JS8818A/8834 /FLR016 /8850A-AS EFA040A CF003-01/-02 NE FSX057 EFA/EFC060B MWT-2/-15 MGFC1801/2407 CF003-01/-02 FLK027/FSX027 ATF-10100/ JS8835/8851-AS /BV /FLR026 / EFA080A MWT-9 or NE ATF MWT-6/-12/-16 CF EFA120A MWT-8/-13 MGFC2415 CF NE FLK057/FLR056 JS8836/8853-AS /FLC087 EFA/EFC120B MWT-8/-13 MGFC2415 CF NE FLK057/FLK056 ATF-45100/ JS8836/8853-AS /BV /FLC087 EFA/EFC120D MGFC0904 EFA160A MGFC2415 NE JS8836/8853-AS EFA160B MGFC2415 NE JS8836/8853-AS EFA/EFC240B/BV MWT-11 MGFC2430/2445 CF FLK107/FLR106 ATF-44100/ JS8837A/8855-AS EFA/EFC240D FLC157 JS8837A/8835-AS EFA480B/BV NE FLK207/FLX257 JS8838A/8856-AS EFA480C MGFC0905 NE FLC307 JS8838A/8856-AS EFA720A FLC307 JS8820-AS EFA018A-70 Same as below CFA/CFB0101 NE76084 EFA025A-70 MGF1303B,23/1403 CFA/CFB0101 NE76084 FSX017LG ATF-13036/ /1903B,23/1423,25 /-13336/ EFA025A-85 ATF13786/ EFA040A-70 NE76184 ATF21186 EFA060B-70 MGF1601/1801 CFC0301 FSU02LG ATF-10136/ /10736/ EFA/EFC060B-100F MGF2407A CFC0301 FSX027WF/FLK027WG EFA080A-100F NE FLK057WG ATF46101 EFA/EFC120B-100F MGF2415A FLC057WG/097WF ATF45101/46101 EFA/EFC240B-100F MGF2430A/2445 FLC107WG/167WF ATF44101/45101 EFA/EFC120D-SOT89 SHF0189 EFA/EFC240D-SOT89 SHF0289 EFA/EFC480C-SOT89 SHF0589

10 EXCELICS PRODUCT LIST-IV & V (Internally Matched Power FETs and MMICs) Part number Op. Freq. Size P-1* G-1* IP3* PAE* Bias Mea'd. Freq. Remark GHz um2 m m % V/mA GHz IV.) INTERNALLY-MATCHED POWER FETs : EIA/EIB1011-2P** Flange Package 33.5/33 9.5/8.5 40/46 30/25 8/ Idss EIA/EIB1011-4P** Flange Package 36.5/35.5 9/8 43/49 30/25 8/ Idss EIA/EIB1213-2P** Flange Package 33.5/33 9.5/8.5 40/46 30/25 8/ Idss EIA/EIB1213-4P** Flange Package 36.5/ /8.5 43/49 30/25 8/ Idss EIA/EIB1314-2P** Flange Package 33.5/33 9/8 40/46 30/25 8/ Idss EIA/EIB1314-4P** Flange Package 36.5/36 8.5/7.5 43/49 27/22 8/ Idss EIA/EIB1414-2P** Flange Package 33.5/33 9/8 40/46 30/25 8/ Idss EIA/EIB1414-4P** Flange Package 36.5/ /7.5 43/49 27/22 8/ Idss EIA/EIB1415-2P** Flange Package 33/ /7.5 40/46 27/22 8/ Idss EIA/EIB1415-4P** Flange Package 36/35.5 8/7 43/49 27/22 8/ Idss EIA1616-8P** Flange Package /0.5Idss EIA/EIB1718A-1P** Flange Package 30.5/ /6 37/43 30/25 8/ Idss EIA/EIB1718A-2P** Flange Package 33.5/ / /20 8/ Idss EIA/EIB1718-1P** Flange Package 30.0/ /5.5 37/43 25/20 8/ Idss EIA/EIB1718-2P** Flange Package 33/ /5.0 40/46 25/20 8/ Idss EIA/EIB1818-1P** Flange Package 30.0/ /5.5 37/43 25/20 8/ Idss EIA/EIB1818-2P** Flange Package 33.0/ /5.0 40/46 25/20 8/ Idss EIA/EIB1819-1P** Flange Package 30.0/ /5.5 37/43 25/20 8/ Idss EIA/EIB1819-2P** Flange Package 33.0/ /5.0 40/46 25/20 8/ Idss P-1 * S.S.Gain * VSWR * VSWR * V.) MMICs: m Input Output EMA302B X :1 # 3.0:1 # 6/0.5Idss stage PA EMA205B X :1 2.0:1 5/ stage Amp. (NF=4), Eng. Sampling. EMA406C X :1 3.0:1 5/ stage Amp.(NF=6), Eng. Sampling. ConV.Loss LO drive P-1 (in) m m EMA407A RF: X /160 RF:20-32 Sub-harmonic Mixer with LO Amp. (LO:10-15, IF: DC-5) Eng. Sampling. Note: * : Typical Values **: Non-hermetic Metal Flange Packages. Also available in open modules with higher in G-1 and 0.5m lower in P-1. # : External matching required with application circuits Excelics Semiconductor, Inc., 2908 Scott Blvd., CA Phone: (408) Fax: (408) Web Site:

11 (Internally Matched Power FETs & MMICs ) IV-Internally Matched Power FETs: Excelics NEC Fujitsu Mitsubishi Toshiba EIA/EIB1011-2M (-2P) NEZ1011-2E FLM TIM EIA/EIB1011-4M (-4P) FLM1011-3F/-4F MGFX36V0717 TIM1011-4/-4L EIA/EIB1213-2M (-2P) TIM EIA/EIB1213-4M (-4P) FLM1213-4F MGFX35V2732 TIM1213-4/-4L EIA/EIB1414-1M (-1P) MGFX30V4045 EIA/EIB1414-2M (-2P) NEZ1414-2E FLM MGFX33V4045 TIM EIA/EIB1414-4M (-4P) NEZ1414-4E FLM1414-3F/-4F MGFX35/37V4045 TIM1414-4/-4L FLM1314-3F EIA/EIB1415-2M (-2P) TIM EIA/EIB1415-4M (-4P) FLM1415-3F TIM1415-4/-4L V-MMICs * : Excelics HP UMS Triquint Toshiba Filtronic EMA302B CHA5093 TGA9070 EMA205B EMA406C HMMC5032/5040 CHA3093 TGA1081 JS9P10-AS LMA441/442/443 EMA407A EMA501X HMMC5034/5040 CHA3093 TG A1071 JS9P03-AS LMA444 Note: * : Bandwidth & Gain can be different.

12 NEW PRODUCT RELEASE 5/24/2000 Part Number Op. Freq. Size P-1 G-1 IP3 NF Bias Mea'd. Freq Eng. Product'n Remark GHz um 2 m m V/mA GHz Sample A.) DISCRETE POWER FETs: EPA120D DC x /0.5Idss 12 Now Now EFA120D DC x /0.5Idss 12 Now Now EFC120D DC x /0.5Idss 12 Now Now EPA120D-SOT89 DC-6 SOT * 8/0.5Idss 2 6/00 7/00 EFA120D-SOT89 DC-4 SOT * 7/ /00 7/00 EFC120D-SOT89 DC-4 SOT * 9/ /00 7/00 EFC240D-SOT89 DC-4 SOT ** 9/ /00 7/00 EFA025A-85 DC-12 85mil u-x Plastic /40 2 5/00 7/00 EPA060B-85 DC-12 85mil u-x Plastic /90 2 6/00 7/00 B.) INTERNALLY-MATCHED POWER FETs : PAE(%) EIA2021-2P Flange Package /20 8/ Idss /00 7/00 P-1 S.S.Gain VSWR VSWR C.) MMICs m Input Ouput EMA103X X :1 3.0:1 # 8/0.5Idss /00 9/00 2-stage PA (low IMD) EMA104X X :1 3.0:1 # 8/0.5Idss /00 9/00 2-stage PA (low IMD) EMA105X X :1 3.0:1 # 8/0.5Idss /00 9/00 2-stage PA (low IMD) EMA204X X :1 2.5:1 8/0.5Idss /00 9/00 3-stage PA (low IMD) EMA303X X :1 3.0:1 5/ /00 9/00 3-stage Amp. EMA501X X :1 3.0:1 5/ /00 9/00 3-stage Amp. D.) DISCRETE POWER FETs WITH VIA-HOLE: For most EFA, EFC, EPA series power FETs (Consult factory for details) Now Now E.) DISCRETE POWER FETS IN Hermetic 100MIL/170MIL Metal FLANGE PACKAGES: For most EFA, EFC, EPA series power FETs (Consult factory for details) Now Now Note: All parameters are typical and preliminary + : Non-hermetic Metal Flange Packages. *: measured at 5V/75mA **: measured at 5V/150mA # : External matching required and application circuit supplied

13 Device Type Bias Condition Frequency N.F. Ga (Typical) (Typical) A.) Power FETs EPA080A 6V/25% Idss 12GHz EPA060B 6V/25% Idss 12GHz EPA040A 6V/25% Idss 12GHz EPA025A 2V/15mA 12GHz V/10mA 12GHz V/15mA 12GHz V/25mA 12GHz V/35mA 12GHz EPA018A 2V/15mA 12GHz EFA018A 2V/15mA 12GHz EPA080A-70 6V/25% Idss 12GHz EPA060B-70 6V/25% Idss 12GHz EPA040A-70 6V/25% Idss 12GHz EPA025A-70 2V/15mA 12GHz EPA018A-70 2V/15mA 12GHz EFA018A-70 2V/15mA 12GHz B.) Low Noise FETs EPB025A 2V/15mA 12GHz EPB018A5 2V/15mA 12GHz EPB018A7 2V/15mA 12GHz EPB018A9 2V/15mA 12GHz EPB025A-70 2V/15mA 12GHz EPB018A5-70 2V/15mA 12GHz EPB018A7-70 2V/15mA 12GHz EPB018A9-70 2V/15mA 12GHz

14 Quick Reference Guide for 2 GHz Application Device Type Bias 6/1/1999 P-1 NF Ga G-1 IP3 Idss BVgd** m m ma V A) Chips: EPB018A5 2V/15mA EPB018A7 2V/15mA EPB018A9 2V/15mA EPB025A 2V/15mA EFA018A 6V/30mA EFA025A 6V/40mA EFA060B 6V/80mA EPA018A 6V/30mA EPA025A 6V/40mA EPA060B 5V/50mA EPA080A 5V/60mA B) Non-hermetic packages: EPB018A7-70 2V/15mA EPB018A9-70 2V/15mA EPB025A-70 2V/15mA EFA018A-70 6V/30mA EFA025A-70 6V/40mA EFA060B-70 5V/50mA V/100mA EFA240D-SOT89 5V/150mA V/350mA EFA480C-SOT89 5V/300mA V/750mA EPA018A-70 6V/30mA EPA018A-SOT23 2V/15mA V/30mA EPA025A-70 6V/40mA EPA060B-70 5V/50mA V/90mA EPA240D-SOT89 5V/150mA V/350mA EPA480C-SOT89 5V/300mA V/750mA Note: All parameters are typical and preliminary + 3V/25mA, *2V/15mA, 10uA,

15 Small Signal Model Element Values High Efficiency Heterojunction Power FETs Parameter L G R G C GS R I R S L S C GD R DS C DS R D L D G M τ C PG C PD Units nh Ω pf Ω Ω nh pf Ω pf Ω nh ms ps pf pf Device: EPA018A EPA025A EPA030C EPA040A EPA060A EPA060B EPA080A EPA090A EPA120A EPA120B EPA120E EPA160A EPA160B EPA240B EPA240D EPA480A EPA480B EPA480C EPA720A EPA960B EPA1200A High Gain Heterojunction Low Noise FET EPB025A

16 Small Signal Model Element Values Low Distortion GaAs Power FETs Parameter L G R G C GS R I R S L S C GD R DS C DS R D L D G M τ C PG C PD Units nh Ω pf Ω Ω nh pf Ω pf Ω nh ms ps pf pf Device: EFA018A EFA025A EFA040A EFA060B EFA080A EFA120A EFA120B EFA160A EFA240B EFA240D EFA480A EFA480B EFA480C EFA720A EFA960B EFA1200A

17 Large Signal Model Parameters for Curtice-Cubic Model For High Efficiency Heterojunction Power FETs (Curtice-Ettenburg Model) Parameter Units EPA025A EPA040A EPA060B EPA080A EPA120A EPA120B EPA160A EPA240B EPA240D EPA480C EPA720A EPA960B EPA1200A BETA 1/V GAMMA 1/V VOUT0 V VT0 V A0 A A1 A/V A2 A/V A3 A/V TAU S 3.00E E E E E E E E E E E E E-12 R1 ohm E E E R2 ohm VB0 V E E E VBI V RF ohm E E E IS A 3.30E E E E E E E E E E E E E-09 N RDS ohm CRF F 1.00E E E E E E E E E E E E E-08 RD ohm RG ohm RS ohm RIN ohm CGSO F 6.45E E E E E E E E E E E E E-11 CGDO F 5.18E E E E E E E E E E E E E-12 FC CDS F 8.70E E E E E E E E E E E E E-12 CGS F CGD F KF AF TNOM C XTI EG ev VTOTC V/ C BETATCE % C FFE LD nh LS nh LG nh

18 Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs (Curtice-Ettenburg Model) Parameter Units EFA025A EFA040A EFA060B EFA080A EFA120A EFA120B EFA160A EFA240B EFA240D EFA480C EFA720A EFA960B EFA1200A BETA 1/V GAMMA 1/V VOUT0 V VT0 V A0 A A1 A/V A2 A/V A3 A/V TAU S 2.00E E E E E E E E E E E E E-12 R1 ohm 1.00E E E E E E E E E E E E E+06 R2 ohm VB0 V 1.00E E E E E E E E E E E E E+06 VBI V RF ohm 1.00E E E E E E E E E E E E E+06 IS A 1.00E E E E E E E E E E E E E-14 N RDS ohm CRF F 1.00E E E E E E E E E E E E E-11 RD ohm RG ohm RS ohm RIN ohm CGSO F 2.70E E E E E E E E E E E E E-11 CGDO F 2.50E E E E E E E E E E E E E-13 FC CDS F 6.00E E E E E E E E E E E E E-12 CGS F CGD F KF AF TNOM C XTI EG ev VTOTC V/ C BETATCE % C FFE LD nh LS nh LG nh

19 EPB018A5/A7/A9 VERY HIGH fmax: 120GHz TYPICAL 0.50~0.90 NOISE FIGURE AND 12.0~13.0 ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH RELIABILITY Idss SORTED IN 5 ma PER BIN RANGE ELECTRICAL CHARACTERISTICS (T a = 25 O C) Super Low Noise High Gain Heterojunction FET SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT NF Ga P 1 G 1 Noise Figure, f=12ghz EPB018A EPB018A Vds=2V, Ids=15mA EPB018A Associated Gain, f=12ghz EPB018A EPB018A Vds=2V, Ids=15mA EPB018A Output Power at 1 Compression f=12ghz 15.0 Vds=3V, Ids=25mA f=18ghz 15.0 Gain at 1 Compression f=12ghz 15.0 Vds=3V, Ids=25mA f=18ghz 13.0 Idss Saturated Drain Current Vds=2V, Vgs=0V ma Gm Transconductance Vds=2V, Vgs=0V ms Vp Pinch-off Voltage Vds=2V, Ids=1.0mA V BVgd Drain Breakdown Voltage Igd=10uA -3-6 V BVgs Source Breakdown Voltage Igs=10uA -3-6 V ' 6 * 6 Chip Thickness: 75 ± 13 microns All Dimensions In Microns m Rth Thermal Resistance (Au-Sn Eutectic Attach) 185 o C/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 5V 4V Vgs Gate-Source Voltage -3V -2V Ids Drain Current Idss Idss Igsf Forward Gate Current 2mA 0.3mA Pin Input Power Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 740mW 625mW

20 EPB018A5/A7/A9 Super Low Noise High Gain Heterojunction FET EPB018A5 S-PARAMETERS 2V, 15mA FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG EPB018A7 S-PARAMETERS 2V, 15mA FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG Note: The data included 0.7 mils diameter Au bonding wires: 1 gate wire, 15 mils each; 1 drain wire, 20 mils each; 6 source wires, 8 mils each.

21 EPB018A5/A7/A9 Super Low Noise High Gain Heterojunction FET EPB018A7 Noise Parameters Vds=2V, Ids=15mA Freq Gamma Opt Nfmin (GHz) (MAG) (ANG) () Rn/

22 0LQ /HDGV $OO EPB018A5/A7/A9-70 Super Low Noise High Gain Heterojunction FET NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE TYPICAL 0.50~0.90 NOISE FIGURE AND 11.5~13.0 ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH RELIABILITY ELECTRICAL CHARACTERISTICS (T a = 25 O C) ' 6 6 SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT NF Ga P 1 G 1 All Dimensions In mils. Noise Figure, f=12ghz EPB018A EPB018A Vds=2V, Ids=15mA EPB018A Associated Gain, f=12ghz EPB018A EPB018A Vds=2V, Ids=15mA EPB018A Output Power at 1 Compression f=12ghz 15.0 Vds=3V, Ids=25mA f=18ghz 15.0 Gain at 1 Compression f=12ghz 14.0 Vds=3V, Ids=25mA f=18ghz 11.5 Idss Saturated Drain Current Vds=2V, Vgs=0V ma * m Gm Transconductance Vds=2V, Vgs=0V ms Vp Pinch-off Voltage Vds=2V, Ids=1.0mA V BVgd Drain Breakdown Voltage Igd=10uA -3-6 V BVgs Source Breakdown Voltage Igs=10uA -3-6 V Rth Thermal Resistance 480 * o C/W * Overall Rth depands on case mounting. MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 5V 4V Vgs Gate-Source Voltage -3V -2V Ids Drain Current Idss 60mA Igsf Forward Gate Current 2mA 0.3mA Pin Input Power Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 285mW 240mW

23 EPB018A5/A7/A9-70 Super Low Noise High Gain Heterojunction FET EPB018A5-70 S-PARAMETERS 2V, 15mA FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG EPB018A7-70 S-PARAMETERS 2V, 15mA FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG EPB018A7-70 Noise Parameters Vds=2V, Ids=15mA Freq. Gamma Opt Nfmin (GHz) (MAG) (ANG) () Rn/

24 EPB025A Low Noise High Gain Heterojunction FET TYPICAL 0.8 NOISE FIGURE AND 11.0 ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH RELIABILITY Idss SORTED IN 5mA PER BIN RANGE D D S G G S ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT NF Ga P 1 G 1 Noise Figure Vds=2V, Ids=15mA Associated Gain Vds=2V, Ids=15mA Output Power at 1 Compression Vds=3V, Ids=25mA Gain at 1 Compression Vds=3V, Ids=25mA f = 12GHz f = 12GHz f=12ghz f=18ghz f=12ghz f=18ghz Idss Saturated Drain Current Vds=2V, Vgs=0V ma Gm Transconductance Vds=2V, Vgs=0V ms Vp Pinch-off Voltage Vds=2V, Ids=1.0mA V BVgd Drain Breakdown Voltage Igd=10uA -3-5 V BVgs Source Breakdown Voltage Igs=10uA -3-5 V m Rth Thermal Resistance (Au-Sn Eutectic Attach) 155 o C/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 5V 3V Vgs Gate-Source Voltage -3V -3V Ids Drain Current Idss Idss Igsf Forward Gate Current 2mA 0.3mA Pin Input Power 1 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 880mW 730mW

25 EPB025A Low Noise High Gain Heterojunction FET S-PARAMETERS 2V, 15mA FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG Note: The data included 0.7 mils diameter Au bonding wires: 2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 4 source wires, 7 mils each.

26 Min. (All Leads) 70 EPB025A-70 NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE TYPICAL 0.85 NOISE FIGURE AND 10.5 ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH RELIABILITY ELECTRICAL CHARACTERISTICS (T a = 25 O C) Low Noise High Gain Heterojunction FET SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT NF Ga P 1 G 1 Noise Figure Vds=2V, Ids=15mA Associated Gain Vds=2V, Ids=15mA Output Power at 1 Compression Vds=3V, Ids=25mA Gain at 1 Compression Vds=3V, Ids=25mA f = 12GHz f = 12GHz f=12ghz f=18ghz f=12ghz f=18ghz S D G Idss Saturated Drain Current Vds=2V, Vgs=0V ma Gm Transconductance Vds=2V, Vgs=0V ms Vp Pinch-off Voltage Vds=2V, Ids=1.0mA V BVgd Drain Breakdown Voltage Igd=10uA -3-5 V BVgs Source Breakdown Voltage Igs=10uA -3-5 V Rth Thermal Resistance 370 * o C/W * Overall Rth depends on case mounting 20 S m MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 5V 3V Vgs Gate-Source Voltage -3V -3V Ids Drain Current Idss 50mA Igsf Forward Gate Current 2mA 0.3mA Pin Input Power 1 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 370mW 310mW

27 EPB025A-70 Low Noise High Gain Heterojunction FET S-PARAMETERS 2V, 15mA FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG

28 EPA018A High Efficiency Heterojunction Power FET VERY HIGH fmax: 120GHz +20.0m TYPICAL OUTPUT POWER 13.0 TYPICAL POWER GAIN AT 18 GHz TYPICAL 0.75 NOISE FIGURE AND 12.5 ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 5 ma PER BIN RANGE ELECTRICAL CHARACTERISTICS (T a = 25 O C) 50 S D G S Chip Thickness: 75 ± 13 microns All Dimensions In Microns SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE NF Ga Output Power at 1 Compression f=12ghz * Vds=6V, Ids=50% Idss f=18ghz 20.0* Gain at 1 Compression f=12ghz Vds=6V, Ids=50% Idss f=18ghz 13.0 Power Added Efficiency at 1 Compression Vds=6V, Ids=50% Idss f=12ghz 48 Noise Figure f=12ghz 0.75 Vds=2V, Ids=15mA Associated Gain f=12ghz 12.5 Vds=2V, Ids=15mA Idss Saturated Drain Current Vds=3V, Vgs=0V ma Gm Transconductance Vds=3V, Vgs=0V ms Vp Pinch-off Voltage Vds=3V, Ids=1.0mA V BVgd Drain Breakdown Voltage Igd=0.5mA V BVgs Source Breakdown Voltage Igs=0.5mA V Rth Thermal Resistance (Au-Sn Eutectic Attach) 185 * P 1 = 21.5m can be obtained with 8v/50% Idss bias. Consult factory for wafer selection. MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 6V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss Idss Igsf Forward Gate Current 9mA 1.5mA Pin Input Power Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 740mW 625mW m % o C/W

29 EPA018A High Efficiency Heterojunction Power FET S-PARAMETERS 6V, 1/2 Idss FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG S-PARAMETERS 2V, 15mA FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG Note: The data included 0.7 mils diameter Au bonding wires: 1 gate wire, 15 mils each; 1 drain wire, 20 mils each; 6 source wires, 8 mils each.

30 Min. (All Leads) 70 EPA018A-70 High Efficiency Heterojunction Power FET NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +20.0m TYPICAL OUTPUT POWER 11.0 TYPICAL POWER GAIN AT 18GHz TYPICAL 0.75 NOISE FIGURE AND 12.5 ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY 20 D S G All Dimensions In mils. S ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE NF Ga Output Power at 1 Compression f=12ghz Vds=6V, Ids=50% Idss f=18ghz 20.0 Gain at 1 Compression f=12ghz Vds=6V, Ids=50% Idss f=18ghz 11.0 Power Added Efficiency at 1 Compression Vds=6V, Ids=50% Idss f=12ghz 45 Noise Figure f=12ghz 0.75 Vds=2V, Ids=15mA Associated Gain f=12ghz 12.5 Vds=2V, Ids=15mA Idss Saturated Drain Current Vds=3V, Vgs=0V ma Gm Transconductance Vds=3V, Vgs=0V ms Vp Pinch-off Voltage Vds=3V, Ids=1.0mA V BVgd Drain Breakdown Voltage Igd=1.0mA V BVgs Source Breakdown Voltage Igs=1.0mA V Rth Thermal Resistance 480 * o C/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 10V 6V Vgs Gate-Source Voltage -6V -3V Ids Drain Current Idss 40mA Igsf Forward Gate Current 9mA 1.5mA Pin Input Power 3 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 285mW 240mW m %

31 EPA018A-70 High Efficiency Heterojunction Power FET S-PARAMETERS 6V, 1/2 Idss FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG

32 EPA018A-SOT23 PRELIMINARY DC-6GHz High Efficiency Heterojunction Power FET LOW COST SURFACE-MOUNT PLASTIC PACKAGE +20.0m TYPICAL OUTPUT POWER 17.0 TYPICAL POWER GAIN AT 2GHz 0.7 TYPICAL NOISE FIGURE AT 2GHz +27m TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz 0.3 X 180 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY SOURCE DRAIN GATE ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 Output Power at 1 Compression f=2ghz Vds=6V, Ids=30mA G 1 Gain at 1 Compression f=2ghz Vds=6V, Ids=30mA NF Noise Figure, Vds=2V, Ids=15mA f=2ghz Vds=6V, Ids=30mA IP3 Output 3rd Order Intercept Point f=2ghz Vds=6V, Ids=30mA m 27 m Idss Saturated Drain Current Vds=3V, Vgs=0V ma Gm Transconductance Vds=3V, Vgs=0V ms Vp Pinch-off Voltage Vds=3V, Ids=1.0mA V BVgd Drain Breakdown Voltage Igd=0.5mA V BVgs Source Breakdown Voltage Igs=0.5mA V Rth Thermal Resistance 450* * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 6V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 45mA Igsf Forward Gate Current 9mA 1.5mA Pin Input Power Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 330mW 280mW o C/W

33 EPA018A-SOT23 PRELIMINARY DC-6GHz High Efficiency Heterojunction Power FET S-PARAMETERS 6V, 30mA FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG

34 EPA025A High Efficiency Heterojunction Power FET +22.5m TYPICAL OUTPUT POWER 11.0 TYPICAL POWER GAIN AT 18 GHz TYPICAL 0.85 NOISE FIGURE AND 11.0 ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 5 ma PER BIN RANGE D D S G G S ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE NF Ga Output Power at 1 Compression f=12ghz Vds=8V, Ids=50% Idss f=18ghz 22.5 Gain at 1 Compression f=12ghz Vds=8V, Ids=50% Idss f=18ghz 11.0 Gain at 1 Compression Vds=8V, Ids=50% Idss f=12ghz 47 Noise Figure f=12ghz 0.85 Vds=2V, Ids=15mA Associated Gain f=12ghz 11.0 Vds=2V, Ids=15mA Idss Saturated Drain Current Vds=3V, Vgs=0V ma Gm Transconductance Vds=3V, Vgs=0V ms Vp Pinch-off Voltage Vds=3V, Ids=1.0mA V BVgd Drain Breakdown Voltage Igd=1.0mA V BVgs Source Breakdown Voltage Igs=1.0mA V m % Rth Thermal Resistance (Au-Sn Eutectic Attach) 155 o C/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 90mA Igsf Forward Gate Current 12mA 2mA Pin Input Power Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 880mW 730mW

35 EPA025A High Efficiency Heterojunction Power FET +22.5m TYPICAL OUTPUT POWER 11.0 TYPICAL POWER GAIN AT 18 GHz TYPICAL 0.85 NOISE FIGURE AND 11.0 ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 5 ma PER BIN RANGE 6 ' ' * * 6 ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P1 G1 PAE NF Ga Output Power at 1 Compression f=12ghz Vds=8V, Ids=50% Idss f=18ghz 22.5 Gain at 1 Compression f=12ghz Vds=8V, Ids=50% Idss f=18ghz 11.0 Gain at 1 Compression Vds=8V, Ids=50% Idss f=12ghz 47 Noise Figure f=12ghz 0.85 Vds=2V, Ids=15mA Associated Gain f=12ghz 11.0 Vds=2V, Ids=15mA Idss Saturated Drain Current Vds=3V, Vgs=0V ma Gm Transconductance Vds=3V, Vgs=0V ms Vp Pinch-off Voltage Vds=3V, Ids=1.0mA V BVgd Drain Breakdown Voltage Igd=1.0mA V BVgs Source Breakdown Voltage Igs=1.0mA V m % Rth Thermal Resistance (Au-Sn Eutectic Attach) 155 MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 90mA Igsf Forward Gate Current 12mA 2mA Pin Input Power Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 880mW 730mW o C/W

36 EPA025A High Efficiency Heterojunction Power FET S-PARAMETERS 8V, 1/2 Idss FREQ --- S S S S FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG Note: The data included 0.7 mils diameter Au bonding wires 2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 4 source wires, 7 mils each.

37 EPA025A High Efficiency Heterojunction Power FET S-PARAMETERS 2V, 15mA Freq ---S S S S22--- Freq ---S S S S22--- GHz Mag Ang Mag Ang Mag Ang Mag Ang GHz Mag Ang Mag Ang Mag Ang Mag Ang EPA025A Noise Parameters Vds=2V, Ids=15mA Freq Gamma Opt Nfmin (GHz) (MAG) (ANG) () Rn/

38 0LQ /HDGV $OO EPA025A-70 High Efficiency Heterojunction Power FET NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +21.5m TYPICAL OUTPUT POWER 8.0 TYPICAL POWER GAIN AT 18GHz TYPICAL 0.85 NOISE FIGURE AND 11.0 ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY ' 6 6 * ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE NF Ga Output Power at 1 Compression f=12ghz Vds=6V, Ids=50% Idss f=18ghz 21.5 Gain at 1 Compression f=12ghz Vds=6V, Ids=50% Idss f=18ghz 8.0 Power Added Efficiency at 1 Compression Vds=6V, Ids=50% Idss f=12ghz 47 Noise Figure f=12ghz 0.85 Vds=2V, Ids=15mA Associated Gain f=12ghz 11.0 Vds=2V, Ids=15mA Idss Saturated Drain Current Vds=3V, Vgs=0V ma Gm Transconductance Vds=3V, Vgs=0V ms Vp Pinch-off Voltage Vds=3V, Ids=1.0mA V BVgd Drain Breakdown Voltage Igd=1.0mA V BVgs Source Breakdown Voltage Igs=1.0mA V Rth Thermal Resistance 370 * o C/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 10V 6V Vgs Gate-Source Voltage -6V -3V Ids Drain Current Idss 50mA Igsf Forward Gate Current 12mA 2mA Pin Input Power 3 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 370mW 310mW m %

39 EPA025A-70 High Efficiency Heterojunction Power FET S-PARAMETERS S-PARAMETERS 6V, 1/2 Idss 2V, 15mA FREQ --- S S S S FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG EPA025A-70 Noise Parameters Vds=2V, Ids=15mA Freq. Popt Nfmin (GHz) (MAG) (ANG) () Rn/

40 EPA030C High Efficiency Heterojunction Power FET +23.0m TYPICAL OUTPUT POWER 11.0 TYPICAL POWER GAIN AT 18GHz 0.3 X 300 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 10mA PER BIN RANGE D S G S ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE Output Power at 1 Compression f=12ghz Vds=8V, Ids=50% Idss f=18ghz 23.0 Gain at 1 Compression f=12ghz Vds=8V, Ids=50% Idss f=18ghz 11.0 Power Added Efficiency at 1 Compression Vds=8V, Ids=50% Idss f=12ghz 45 Idss Saturated Drain Current Vds=3V, Vgs=0V ma Gm Transconductance Vds=3V, Vgs=0V ms Vp Pinch-off Voltage Vds=3V, Ids=1.0mA V BVgd Drain Breakdown Voltage Igd=1.0mA V BVgs Source Breakdown Voltage Igs=1.0mA V m % Rth Thermal Resistance (Au-Sn Eutectic Attach) 125 o C/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 110mA Igsf Forward Gate Current 15mA 2.5mA Pin Input Power Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 1.1W 900mW

41 EPA030C High Efficiency Heterojunction Power FET S-PARAMETERS 8V, 1/2 Idss FREQ --- S S S S FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG Note: The data included 0.7 mils diameter Au bonding wires: 1 gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each.

42 EPA040A High Efficiency Heterojunction Power FET +24.5m TYPICAL OUTPUT POWER 11.0 TYPICAL POWER GAIN AT 18GHz 0.3 X 400 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 10mA PER BIN RANGE ' * 6 6 ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE Output Power at 1 Compression f=12ghz Vds=8V, Ids=50% Idss f=18ghz 24.5 Gain at 1 Compression f=12ghz Vds=8V, Ids=50% Idss f=18ghz 11.0 Power Added Efficiency at 1 Compression Vds=8V, Ids=50% Idss f=12ghz 45 Idss Saturated Drain Current Vds=3V, Vgs=0V ma Gm Transconductance Vds=3V, Vgs=0V ms Vp Pinch-off Voltage Vds=3V, Ids=1.0mA V BVgd Drain Breakdown Voltage Igd=1.0mA V BVgs Source Breakdown Voltage Igs=1.0mA V m % Rth Thermal Resistance (Au-Sn Eutectic Attach) 105 o C/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 135mA Igsf Forward Gate Current 20mA 3mA Pin Input Power Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 1.3W 1.1W

43 EPA040A High Efficiency Heterojunction Power FET S-PARAMETERS 8V, 1/2 Idss FREQ --- S S S S FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG Note: The data included 0.7 mils diameter Au bonding wires: 1 gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each.

44 Min. (All Leads) 70 EPA040A-70 High Efficiency Heterojunction Power FET NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +23.5m TYPICAL OUTPUT POWER 7.0 TYPICAL POWER GAIN AT 18GHz 0.3 X 400 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY S D G 20 S ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE Output Power at 1 Compression f=12ghz Vds=6V, Ids=50% Idss f=18ghz 23.5 Gain at 1 Compression f=12ghz Vds=6V, Ids=50% Idss f=18ghz 7.0 Power Added Efficiency at 1 Compression Vds=6V, Ids=50% Idss f=12ghz 45 Idss Saturated Drain Current Vds=3V, Vgs=0V ma Gm Transconductance Vds=3V, Vgs=0V ms Vp Pinch-off Voltage Vds=3V, Ids=1.0mA V BVgd Drain Breakdown Voltage Igd=1.0mA V BVgs Source Breakdown Voltage Igs=1.0mA V Rth Thermal Resistance 250 * o C/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 10V 6V Vgs Gate-Source Voltage -6V -3V Ids Drain Current Idss 75mA Igsf Forward Gate Current 20mA 3mA Pin Input Power 3 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 550mW 455mW m %

45 EPA040A-70 High Efficiency Heterojunction Power FET S-PARAMETERS 6V, 1/2 Idss FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG

46 EPA060A High Efficiency Heterojunction Power FET +26.5m TYPICAL OUTPUT POWER 10.5 TYPICAL POWER GAIN AT 18GHz 0.3 X 600 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 15mA PER BIN RANGE 35 S D G S D G S ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE Output Power at 1 Compression f=12ghz Vds=8V, Ids=50% Idss f=18ghz 26.5 Gain at 1 Compression f=12ghz Vds=8V, Ids=50% Idss f=18ghz 10.5 Power Added Efficiency at 1 Compression Vds=8V, Ids=50% Idss f=12ghz 45 Idss Saturated Drain Current Vds=3V, Vgs=0V ma Gm Transconductance Vds=3V, Vgs=0V ms Vp Pinch-off Voltage Vds=3V, Ids=2.0mA V BVgd Drain Breakdown Voltage Igd=1.0mA V BVgs Source Breakdown Voltage Igs=1.0mA V m % Rth Thermal Resistance (Au-Sn Eutectic Attach) 65 o C/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 220mA Igsf Forward Gate Current 30mA 5mA Pin Input Power Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 2.1W 1.7W

47 EPA060A High Efficiency Heterojunction Power FET S-PARAMETERS 8V, 1/2 Idss FREQ --- S S S S FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG Note: The data included 0.7 mils diameter Au bonding wires: 2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 7 mils each.

48 EPA060B/EPA060BV High Efficiency Heterojunction Power FET +26.5m TYPICAL OUTPUT POWER 10.0 TYPICAL POWER GAIN FOR EPA060B AND 11.5 FOR EPA060BV AT 18GHz 0.4 TYPICAL NOISE FIGURE AT 2GHz 0.3 X 600 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EPA060BV WITH VIA HOLE SOURCE GROUNDING Idss SORTED IN 15mA PER BIN RANGE ' * ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS EPA060B EPA060BV UNIT P 1 G 1 PAE MIN TYP MAX MIN TYP MAX Output Power at 1 Compression f=12ghz Vds=8V, Ids=50% Idss f=18ghz Gain at 1 Compression f=12ghz Vds=8V, Ids=50% Idss f=18ghz Gain at 1 Compression Vds=8V, Ids=50% Idss f=12ghz NF Noise Figure Vds=5V,Ids=50mA f=2ghz GA Associated Gain Vds=5V,Ids=50mA f=2ghz Idss Saturated Drain Current Vds=3V, Vgs=0V ma Gm Transconductance Vds=3V, Vgs=0V ms Vp Pinch-off Voltage Vds=3V, Ids=2.0mA V BVgd Drain Breakdown Voltage Igd=1.0mA V BVgs Source Breakdown Voltage Igs=1.0mA V Rth Thermal Resistance (Au-Sn Eutectic Attach) MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS EPA060B EPA060BV m % o C/W ABSOLUTE 1 CONTINUOUS 2 ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 8V 12V 8V Vgs Gate-Source Voltage -8V -3V -8V -3V Ids Drain Current Idss 190mA Idss Idss Igsf Forward Gate Current 30mA 5mA 30mA 5mA Pin Input Power 3 Compression 3 Compression Tch Channel Temperature 175 o C 150 o C 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C -65/175 o C -65/150 o C Pt Total Power Dissipation 1.8W 1.5W 2.5W 2.1W

49 EPA060B EPA060B/EPA060BV High Efficiency Heterojunction Power FET S-PARAMETERS EPA060B 8V, 1/2 Idss FREQ --- S S S S FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG EPA060BV 8V, 1/2 Idss FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG Note: The data included 0.7 mils diameter Au bonding wires; 1gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each; no source wires for EPA060BV.

50 EPA060B/EPA060BV High Efficiency Heterojunction Power FET S-Parameters EPA060B, 5V,50mA FREQ --- S S S S FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG EPA060B Noise Parameters Vds=5V, Ids=50mA Freq Gamma Opt Nfmin (GHz) (MAG) (ANG) () Rn/

51 0LQ /HDGV $OO Features NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +26m TYPICAL OUTPUT POWER 9.0 TYPICAL POWER GAIN AT 12 GHZ 0.4 TYPICAL NOISE FIGURE AT 2GHz 20 TYPICAL ASSOCIATED GAIN AT 2 GHz 0.3 X 600 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Applications High Dynamic Range LNA DC to 18 GHz EPA060B-70 High Efficiency Heterojunction Power FET ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE IP3 NF G A Output Power at 1 Compression Vds=6V, Ids=50% Idss Gain at 1 Compression Vds=6V, Ids=50% Idss Power Added Efficiency at 1 Compression Vds=6V, Ids=50% Idss +5m P OUT /Tone (5V/50mA) (5V/90mA) Noise Figure (5V/50mA) (5V/90mA) Associated Gain (5V/50mA) (5V/90mA) f=2ghz f=12ghz f=2ghz f=12ghz f=2ghz f=12ghz f=2ghz f=2ghz f=2ghz Idss Saturated Drain Current Vds=3V, Vgs=0V ma Gm Transconductance Vds=3V, Vgs=0V ms Vp Pinch-off Voltage Vds=3V, Ids=2.0mA V BVgd Drain Breakdown Voltage Igd=1.0mA V BVgs Source Breakdown Voltage Igs=1.0mA V Rth Thermal Resistance 175 * o C/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 10V 6V Vgs Gate-Source Voltage -6V -3V Ids Drain Current Idss 110mA Igsf Forward Gate Current 30mA 5mA Pin Input Power 3 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 780mW 650mW ' 6 6 * m % m

52 EPA060B-70 High Efficiency Heterojunction Power FET Typical Performance Noise Figure &IP3 2GHz (POUT/Tone = 5m) NF [] Ids [ma] IP3 [m] NF IP3 S-PARAMETERS 6V, 1/2 Idss FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG

53 EPA060B-70 High Efficiency Heterojunction Power FET S-Parameters 5V,50ma FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG EPA060B-70 Noise Parameters Vds=5V, Ids=50mA Freq. Gamma Opt Nfmin (GHz) (MAG) (ANG) () Rn/

54 EPA080A High Efficiency Heterojunction Power FET +27.5m TYPICAL OUTPUT POWER 9.5 TYPICAL POWER GAIN AT 18GHz 0.3 X 800 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 20 ma PER BIN RANGE D D S G S G S ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE Output Power at 1 Compression f=12ghz Vds=8V, Ids=50% Idss f=18ghz 27.5 Gain at 1 Compression f=12ghz Vds=8V, Ids=50% Idss f=18ghz 9.5 Power Added Efficiency at 1 Compression Vds=8V, Ids=50% Idss f=12ghz 45 Idss Saturated Drain Current Vds=3V, Vgs=0V ma Gm Transconductance Vds=3V, Vgs=0V ms Vp Pinch-off Voltage Vds=3V, Ids=2.5mA V BVgd Drain Breakdown Voltage Igd=1.0mA V BVgs Source Breakdown Voltage Igs=1.0mA V m % Rth Thermal Resistance (Au-Sn Eutectic Attach) 55 o C/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 260mA Igsf Forward Gate Current 40mA 7mA Pin Input Power Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 2.5W 2.1W

55 EPA080A DATS SHEET High Efficiency Heterojunction Power FET S-PARAMETERS 8V, 1/2 Idss FREQ --- S S S S FREQ --- S S S S (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG Note: The data included 0.7 mils diameter Au bonding wires: 2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 7 mils each.

56 Min. (All Leads) 70 EPA080A-70 High Efficiency Heterojunction Power FET NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +25.5m TYPICAL OUTPUT POWER 7.0 TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED MUSHROOM GATE Si 3 N 4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY S D G 20 S ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1 G 1 PAE Output Power at 1 Compression f=12ghz Vds=5V, Ids=50% Idss Gain at 1 Compression f=12ghz Vds=5V, Ids=50% Idss Power Added Efficiency at 1 Compression Vds=5V, Ids=50% Idss f=12ghz 40 Idss Saturated Drain Current Vds=3V, Vgs=0V ma Gm Transconductance Vds=3V, Vgs=0V ms Vp Pinch-off Voltage Vds=3V, Ids=2.5mA V BVgd Drain Breakdown Voltage Igd=1.0mA V BVgs Source Breakdown Voltage Igs=1.0mA V Rth Thermal Resistance 135 * o C/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 8V 5V Vgs Gate-Source Voltage -5V -3V Ids Drain Current Idss 185mA Igsf Forward Gate Current 40mA 7mA Pin Input Power 3 Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature -65/175 o C -65/150 o C Pt Total Power Dissipation 1.1W 0.9W m %

57 SUNSTAR 商斯达实业集团是集研发 生产 工程 销售 代理经销 技术咨询 信息服务等为一体的高科技企业, 是专业高科技电子产品生产厂家, 是具有 10 多年历史的专业电子元器件供应商, 是中国最早和最大的仓储式连锁规模经营大型综合电子零部件代理分销商之一, 是一家专业代理和分銷世界各大品牌 IC 芯片和電子元器件的连锁经营綜合性国际公司 在香港 北京 深圳 上海 西安 成都等全国主要电子市场设有直属分公司和产品展示展销窗口门市部专卖店及代理分销商, 已在全国范围内建成强大统一的供货和代理分销网络 我们专业代理经销 开发生产电子元器件 集成电路 传感器 微波光电元器件 工控机 /DOC/DOM 电子盘 专用电路 单片机开发 MCU/DSP/ARM/FPGA 软件硬件 二极管 三极管 模块等, 是您可靠的一站式现货配套供应商 方案提供商 部件功能模块开发配套商 专业以现代信息产业 ( 计算机 通讯及传感器 ) 三大支柱之一的传感器为主营业务, 专业经营各类传感器的代理 销售生产 网络信息 科技图书资料及配套产品设计 工程开发 我们的专业网站 中国传感器科技信息网 ( 全球传感器数据库 ) 服务于全球高科技生产商及贸易商, 为企业科技产品开发提供技术交流平台 欢迎各厂商互通有无 交换信息 交换链接 发布寻求代理信息 欢迎国外高科技传感器 变送器 执行器 自动控制产品厂商介绍产品到中国, 共同开拓市场 本网站是关于各种传感器 - 变送器 - 仪器仪表及工业自动化大型专业网站, 深入到工业控制 系统工程计测计量 自动化 安防报警 消费电子等众多领域, 把最新的传感器 - 变送器 - 仪器仪表买卖信息, 最新技术供求, 最新采购商, 行业动态, 发展方向, 最新的技术应用和市场资讯及时的传递给广大科技开发 科学研究 产品设计人员 本网站已成功为石油 化工 电力 医药 生物 航空 航天 国防 能源 冶金 电子 工业 农业 交通 汽车 矿山 煤炭 纺织 信息 通信 IT 安防 环保 印刷 科研 气象 仪器仪表等领域从事科学研究 产品设计 开发 生产制造的科技人员 管理人员 和采购人员提供满意服务 我公司专业开发生产 代理 经销 销售各种传感器 变送器 敏感元器件 开关 执行器 仪器仪表 自动化控制系统 : 专门从事设计 生产 销售各种传感器 变送器 各种测控仪表 热工仪表 现场控制器 计算机控制系统 数据采集系统 各类环境监控系统 专用控制系统应用软件以及嵌入式系统开发及应用等工作 如热敏电阻 压敏电阻 温度传感器 温度变送器 湿度传感器 湿度变送器 气体传感器 气体变送器 压力传感器 压力变送 称重传感器 物 ( 液 ) 位传感器 物 ( 液 ) 位变送器 流量传感器 流量变送器 电流 ( 压 ) 传感器 溶氧传感器 霍尔传感器 图像传感器 超声波传感器 位移传感器 速度传感器 加速度传感器 扭距传感器 红外传感器 紫外传感器 火焰传感器 激光传感器 振动传感器 轴角传感器 光电传感器 接近传感器 干簧管传感器 继电器传感器 微型电泵 磁敏 ( 阻 ) 传感器 压力开关 接近开关 光电开关 色标传感器 光纤传感器 齿轮测速传感器 时间继电器 计数器 计米器 温控仪 固态继电器 调压模块 电磁铁 电压表 电流表等特殊传感器 同时承接传感器应用电路 产品设计和自动化工程项目 欢迎索取免费详细资料 设计指南和光盘 ; 产品凡多, 未能尽录, 欢迎来电查询 更多产品请看本公司产品专用销售网站 : 商斯达中国传感器科技信息网 : 商斯达工控安防网 : 商斯达电子元器件网 : 商斯达微波光电产品网 : 商斯达消费电子产品网 :// 商斯达军工产品网 : 商斯达实业科技产品网 :// 传感器销售热线 : 地址 : 深圳市福田区福华路福庆街鸿图大厦 1602 室电话 : 传真 : (0) MSN: [email protected] 邮编 : [email protected] QQ: 深圳赛格展销部 : 深圳华强北路赛格电子市场 2583 号电话 : 技术支持 :