TONE RINGER

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67K65MFET 4.8.A EKD4843. D484367K65 3 7.

1 D484367K65 EK_. EKD484367K65. D K W 8 D K65 WM 65 MFET D K65MFET 4.8.A EKD4843. D484367K mm 3 * 6µA * EMI * * * * * MFET * * * * * * ATX * DB IN 85~65 ac UT 9 UT 5() UT W Ev 8%. 7..

2 D484367K65 EK_. EKD4843. Flyback IN I I DAIN n: D o T I EC C l M D(N) M (IN D(N) ) t N II I + L I II L tn I N ( + D) t N FF IEC N N L EC IN D(N) I N N I t I I EC EC M D FF M I DCM M I EC I EC (CCM) EC. 7..

3 I I DAIN I D484367K65 EK_. IN + IN D(N) I EC T N T FF T FF T T FF 3 TN M TFF M 3 M (TN) M D IN M M D(N) I (IN D(N) ) TN L L I ( IN D(N) ) TN E L M (TFF)TFF TFF M (TFF) M D D ( + D) N ( + D) N ( + D) N DAIN IN + IN + N

4 D484367K65 EK_. M (TFF) (IN D(N) ) D η IN η L f TN TN η D D T + T T I N FF TN M TFF M M M I DAIN I I IN + IN D(N) I EC T N T T FF 4 M (IN D(N) ) D ( + D) D L N f L f N ( ) D N IN D(N) D (- D) N

5 L I I E D484367K65 EK_. ( ) D N ( + ) D N IN D(N) D I EC N I EC f ( + D) D N I B IEC TFF IEC D T I B ( ) ( + ) IN D(N) N f L (IN D(N) ) + + D N D L L C K K DAIN DAIN I II IEC IN + IN D(N) IN I I C L K D DAIN M n: LK D o I EC T C l D(N) C DAIN

6 D484367K65 EK_. DAIN II I IN + IN D(N) IEC

7 D484367K65 EK_. CC Q Drain + - FB GND GND 7 D K65 367K65. CC start stop t ICC t 8 D

8 D484367K65 EK_. CC AC CC CC CC cc 8 CC 6uA. EF EF EF 5 Drain EF EF GND sense 5m t GND 3. EMI EMI 4m 65KHz 69KHz 6 T T MIN MAX f max f min 9 4. FB 5m 35m<FB

9 D484367K65 EK_. <5m FB 35m FB FB.5 FB FB FB 35m FB<35m FB FB t 5. WM MFET LEBWM LEB MFET MFET t MFET MFET t LEB LEB LEB

10 D484367K65 EK_. MFET FBFB 7. ) CC NCC99/N ) FBFB 3) LEB.6 4). 7..

11 D484367K65 EK_. DEM DC.mF/K ort 9~65AC ort FTH L UU6 C.m/4 ~ D IN47 D IN47 D3 D4 IN47 IN47 C m/45 M/.5W U 47K/.5W 3 47K/.5W 4 47K/.5W C3 D5 F7 Np86 T D7 36 Ns9 GND L 38mH C4 47m/5 C5 47m/5 C6.m/5 +9 UT GND Drain 8 Lm.5mH GND Nl D8 F5 5 /.5W C7 mf/5 3 4 GND Drain CC Drain FB NC D4843/DI C8.mF/5 U C87/DI4 C9.nF/K 6.33K/.5W 7 C 8 5K/.5W K/.5W.mF/5 3 U3 A43/T-9 GND 9 5.6K/.5W 8 acminacmaxoo o o IN IN / η CDC acm in min t c 9 AC. 7..

12 ( ) min max D484367K65 EK_. acmin o f η C acmax f C η L D MAX acmin DC MFET o acmax DMAX min D MAX + dsmax max L m L DC L t C ( D ) min MAX m in fs KF f K K F K F < s K F F t C I pk I Iedc + ( I ) ( I) I rms edc + DMAX I in edc min DMAX min D I L f m MAX 4 Lm Ipk Irms 4 4 A p Aw A e mm 45. B

13 D484367K65 EK_. A A B B w e B sat Lm Ilim 6 N pmin B A sat I B lim e sat Np n N + s o d N N o p s N N p d pmin N s n N N s CC + + o d d N CC Np G 4πA e( ) L A A L m L d M I I rms rmss I DMAX Irms n D rmss 5A/mm A w Ac K MAX

14 D484367K65 EK_. Ac K I rmss max n D + I caps rmss o I I Irmss I o I D C f MAX + C C I pk n C CD C L LlkIpk fs C L I f lk pk s C C C C f s CMAX + dsmax max CLlkf Ilim CMAX

15 D484367K65 EK_. CCM D4843 FB Ilimindc Ln G 3( + ) L indc + D ωp ωz C C C L( D) n ωrz DL indc L n C C DCM G FB ωp ωz LC CC vfb FB v out B + s( F + )CF C s + s( C ) CCM /3 LC LC /3 FB /3 3 L 38mH C4 47 µ/5 C5 47 µ/5 D C6.µ/5 F +9 UT B B m GND FB U : D F B C F C B C87/DI4 C9.nF/K 3 U3 A43/T-9 GND

16 D484367K65 EK_. GND FBCC GND GND FBCC DC M /. 5 W U C3 D5 F7 Np86 T D7 36 Ns9 GND L 38m H +9 UT D8 F5 5 /.5W C7 m F/5 3 4 GND GND CC FB Drain Drain Drain NC GND D4843/DI8 C Y CB () U C, C3/ 3/ 4D

17 D484367K65 EK_. ort 9~65AC ort FTH L UU6 C.m/4 ~ D IN47 D3 IN47 D IN47 D4 IN47 C m/45 M/.5W 3 4 GND Drain GND Drain CC Drain FB NC K/. 5 W 3 74 K/. 5 W 4 74 K/. 5 W Nl D8 F5 5 /.5W C7 mf/5 U D4843/DI8 DC.mF/K C3 D5 F7 Np86 C8.mF/5 T D7 36 L 38mH Ns9 GND C4 47m/5 Lm.5mH GND U C87/DI4 C9.nF/K C5 47m/5 C6.m/5 6.33K/.5W 7 K/.5W C.mF/5 3 U3 A43/T-9 GND +9 UT 8 5K/.5W 9 5.6K/.5W DEM

18 D484367K65 EK_

19 D484367K65 EK_. CB

20 3 D484367K65 EK_.. 7..

网络分析仪

网络分析仪 5. A 5-, N l, N Hl 5- MKS l N r N H A/m l 5-a 5- CGS r 0.4πN H l (Oe) 5-b (CGS )Oe, MKS 0 (Oe) A/m 0.4π 5-. 5- N A A dψ d( BAN) e dt dt A N A B 5- db NA (5-) dt d ψ / dt. 5- H B B µh dh NAµ dt in H l N