(Electron Spectroscopy) 3-2

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1 III AES (Depth Profile)

2 (Electron Spectroscopy) 3-2

3 Pierre Auger P. Auger X (Auger ) AES 1. (Auger Effect) ' E L2,3 K L 1 (EK E ) L1 X ( XPS ) ( AES), 3-3

4 (Electron Spectroscopy) X E V Y X 4f7/2 4f5/2 4d5/2 4d3/2 4p3/2 4p1/2 4s1/2 N 7 N 6 N 5 N 4 N 3 N 2 N 1 W i X p Y q W 3d5/2 3d3/2 3p3/2 3p1/2 (i, p, q ) 3s1/2 M 5 M 4 M 3 M 2 M 1 : W i X p Y q 2p3/2 2p1/2 2s1/2 1s1/2 K L 3 L 2 L 1 X W X W=X Y C-K (Coster-Kronig ) (p>i) L 1 L 2 M W=X=Y C-K(p>i q>i) N 5 N 6 N 6 K LM K KLL KLM KMM KLL 1 L 1 KL 1 L 2 KL 1 L 3 KL 2 L 2 KL 2 L 3 K L- M- L- M- KLL L-S 5 j j 6 9 H He 3-4

5 2. : E WXY = E W E X E Y Φ Z WXY WXY ( ): EWXY ( Z) = EW ( Z) EX ( Z) E Y ( Z) EY( Z) < EY ( Z) < EY( Z +1 ) EY ( Z) = EY( Z) + β[ EY( Z + 1 ) EY( Z)] :β 0<β<1 EWXY ( Z) = EW ( Z) EX ( Z) EY ( Z) β[ EY ( Z + 1 ) EY ( Z)] (1) WXY WYX EWXY ( Z) = EWYX ( Z) X Y EWYX ( Z) = EW ( Z) EY ( Z) EX ( Z) β[ EX ( Z + 1 ) EX ( Z)] (2) (1) (2) β=β =1 1 1 EWXY ( Z) = EWYX ( Z) = EW ( Z) 2 { EX ( Z + 1) + EX ( Z)} 2 { EY ( Z + 1 ) + EY ( Z)} (3) 1 1 EWXY ( Z) = EW ( Z) 2 { EX ( Z + 1) + EX ( Z) } 2 { EY ( Z + 1) + EY ( Z) } Φ S (4) Φ S E F E F =0 : 1 1 E Z = E Z E Z E Z E Z E Z Φ (5) { } 2 { ( ) ( )} ( ) ( ) ( ) ( ) WXY W 2 X X Y Y Sp E' WXY E" WXY ' EF=0 Y X Φs Φ sp E F W 3-5

6 (Electron Spectroscopy) 3-6

7 ( ): (1) ; (2) ; (3) 1. A + e p A +* + 2e ( ) ( ) E p Born W Worthington-Tomlin : aw bw 1 4U QW = ( ln ) 2 1 U EW U e f E P E W QW 2 EW Q W ( cm 2 ) E W W ( ev) U=E P /E W a W b W : W=K: a W =0.35 b W =2 W=L: a W =0.25 b W =8 W=M: a W =0.25 b W =18 b W Q W U E P E W U 3-5 Q W E W E W

8 (Electron Spectroscopy) 2. : P x P a P x +P a =1 K E.H.S.Burhop : A.H. Wapstra : n 1 Pa 3 P a = A+ BZ + CZ n=1/4 A= B= C= P a P x Z Z<19 P a 90% Z=33 P x P a Yield per K-electron vacancy Auger electron yield X-Ray yield Atomic number(z) Z Z (K, L, M ) Z 15 K P x 5% 0 KLL LMM MNN Z 15 Z=41 L Z K Z 3(Li) 13(Al) L Z 11(Na) 35(Br) M Z 19(K) 70(Yb) N Z 39(Y) 94(Pu) Z KLL LMM MNN WXY X Y X Y W 1 KLL LMM MNN NOO 3-8

9 3. (attenuation length) (escape depth) ( ) N dz dn dn N dz dn N = N e z 0 λ Ndz = 1 λ λ 30% 3λ 5% θ 3λcosθ λ λcosθ λ 4. E P 3-30 kev 10 nm E W W r M r M I total = I 0 + I M = I 0 (1+r M ) E W 3-9

10 (Electron Spectroscopy) 1+r M = [1 0.9E W /E P ] η(z) E W E P η(z) = Z Z Z 3 5. : I A = I P Secα n i QW PWXY λcos θ (1 + rm) T R : I P α n i Q W W P WXY WXY λcosθ r M T R R

11 (1) (2) Si L 2,3 VV (3) XPS ( ) AES AES AES XPS AES XPS (ev) Li KVV Na L 23 VV 22, 27 19, 23 Mg L 23 VV 34, Al L 23 VV Si L 23 VV Ti M 23 VV V M 23 VV Cr M 23 VV 35 29, 43 Mn M 23 VV 40 35, 46 Fe M 23 VV 46 42,

12 (Electron Spectroscopy) ( ) 1 (i) W, W(Ir) LaB 6 (ii) (FEG) ( ) W 1 µm LaB 6 FEG 20 nm 20~30 kev 2 AES (CMA) (CHA) CMA CHA (CHA) ( ) (Cylindrical Mirror Analyzer) 3-12

13 3. AES (Point analysis) (Line scan) (Mapping) (Profiling) 4. XPS XPS 0.1~1% < 5 nm. 5. AES AES <1µm Window UV 6. (Heating) (ESD) 3-13

14 (Electron Spectroscopy) 1. AES Perkin-Elmer ev Fe LMM AES : ; ; ; ; AES AES XPS XPS AES AES XPS AES 3-14

15 ( ) (1). : (a) (Li, Be, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, (b) (B, C, N, O, F, P, S, Cl, Br, I, Ne, Ar, Kr, Xe, (c) (d) (2). AES (a) 550 (b) Cr (c) AES / (d) 3-15

16 (Electron Spectroscopy) AES 3.5%Ni, 1.6%Cr, 0.4%C, 300ppm Sb( ) Sb 0.1%Ti Sb W 825 AES P P P 2nm (e) V GaAs Ga M 1 M 45 V Ga Ga (3) (a) dn ( E) de Ni(110) (b) AES 4.9% 50%Ni-50%Al AES AES Ni (4) 3-16

17 AES (a) (c) - IC pad stripping trouble analysis Analysis of organic film stripping trouble on Al plate 3-17

18 (Electron Spectroscopy) 2. AES - IiWXY, = IP Secα ni QiW, PiWXY, λiwxy, cosθ ( 1 + rm ) T( E) R i : n i C i = n j j I i,wxy : Ag (351eV MNN ) i std std Ag I i, WXY I Ag, MNN std IiWXY, Si = std I Ag, MNN S i i S i i I I i,( WXY ) j,( WXY ) I I i j i j Ci = = Si j S j Si j S j 30% 3-18

19 3-19

20 (Electron Spectroscopy) 304 AES : Fe(703eV) Cr(529eV) Ni(848eV) 1010, [ ] C C C Fe Cr Ni = = = = = = CFe = , CCr = , CNi = AES 3-20

21 (Depth Profile) nm nm AES AES (Crater) AES (Ar + Ne + ) z S j 1 = [cm/sec.] e ρ NA M S= ( / ) j= A/cm 2 ) e= N A =Avogadro's ρ= g/cm 3 ; M= 3-21

22 (Electron Spectroscopy) Si O Si Cr Ni Sputtering time Cr Ni Cr Si C(Z) g(z-z ) I(Z) I(Z) : + ( ) ( ) ( ) IZ = CZ gz Z dz g(z-z ) C(Z) XPS/AES 3 20 µm Depth profiling of Angle Lap/Line Analysis 3-22

23 Au/Cr/Si Layer-by-layer, 3D-islands, Alloying. 2. (SAM)(Scanning Auger Microprobe) SAM 20nm AES + SEM = SAM : 0 (Point analysis) x y E 1 (Line scan) y E x 2 (Area map) E x y 3-23

24 (Electron Spectroscopy) a) SEM b) SAM Fe LMM c) SAM O KLL d) SAM C KLL 3. SAM 3-24

25 3-25 AES ( ) H He XPS AES AES CMA XPS (X CHA) LEED (RFA) XPS H He Z <1% (SAM) <1 µm ( 5 nm) X XPS / / AES 304 Fe Cr Ni LMM Fe Cr Ni

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