FDP027N08B N 沟道 PowerTrench® MOSFET

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1 FDP027N08B N 沟道 PowerTrench MOSFET 80 V 223 A 2.7 m 特性 R DS(on) = 2.2 m ( = 0 V, I D = 00 A 低 FOM R DS(on) * Q G 低反向恢复电荷, Q rr =2 nc 软反向恢复体二极管可实现高效同步整流快速开关速度 00% 经过 UIL 测试符合 RoHS 标准说明 204 年 2 月该 N 沟道 MOSFET 采用飞兆半导体的 PowerTrench 工艺生产, 这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而量身定制应用用于 ATX/ 服务器 / 电信 PSU 的同步整流电池保护电路电机驱动和不间断电源 D G DS TO-220 G S MOSFET 最大额定值 T C = 25 C 除非另有说明符号参数 FDP027N08B_F02 单位 S 漏极 - 源极电压 80 V S 栅极 - 源极电压 ±20 V - 连续 (T C = 25 C, 硅限制 ) 223* I D 漏极电流 - 连续 (T C = 00 C, 硅限制 ) 58* A - 连续 (T C = 25 C, 封装限制 ) 20 I DM 漏极电流 - 脉冲 ( 说明 ) 892 A E AS 单脉冲雪崩能量 ( 说明 2) 97 mj dv/dt 二极管恢复 dv/dt 峰值 ( 说明 3) 6.0 V/ns P D 功耗 (T C = 25 C) 246 W - 降低至 25 C 以上.64 W/ C T J, T STG 工作和存储温度范围 -55 至 +75 C T L 用于焊接的最大引线温度, 距离外壳 /8", 持续 5 秒 300 C * 计算连续电流 ( 基于最高允许结温 ) 封装限制电流为 20 A 热性能符号参数 FDP027N08B_F02 单位 R JC 结至外壳热阻最大值 0.6 C/W R JA 结至环境热阻最大值 62.5

PowerTrench 工艺生产, 这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而量身定制应用用于 ATX/ 服务器 / 电信 PSU 的同步整流电池保护电路电机驱动和不间断电源 D G DS TO-220 G S MOSFET 最大额定值 T C

2 封装标识与定购信息器件编号顶标封装包装方法卷尺寸带宽数量 FDP027N08B_F02 FDP027N08B TO-220 塑料管 N/A N/A 50 个电气特性 T C = 25 C 除非另有说明符号参数测试条件最小值典型值最大值单位关断特性 BS 漏极 - 源极击穿电压 I D = 250 A, = 0 V V BS 击穿电压温度系数 I / T D = 250 A, 参考温度为 25 C V/ C J = 64 V, = 0 V - - I DSS 零栅极电压漏极电流 A = 64 V, T C = 50 C I GSS 栅极 - 体漏电流 = ±20 V, = 0 V - - ±00 na 导通特性 (th) 栅极阈值电压 =, I D = 250 A V R DS(on) 漏极至源极静态导通电阻 = 0 V, I D = 00 A m g FS 正向跨导 = 0 V, I D = 00 A S 动态特性 C iss 输入电容 pf = 40 V, = 0 V, C oss 输出电容 pf f = MHz C rss 反向传输电容 pf C oss (er) 能量相关输出电容 = 40 V, = 0 V pf Q g(tot) 0 V 的栅极电荷总量 nc Q gs 栅极 - 源极栅极电荷 = 40 V, = 0 V, nc Q I D = 00A gs2 栅极平台电荷阈值 nc Q gd 栅极 - 漏极米勒电荷 ( 说明 4) nc ESR 等效串联电阻 (G-S) f = MHz 开关特性 t d(on) 导通延迟时间 ns t r 开通上升时间 V DD = 40 V, I D = 00 A, ns t = 0 V, R G = 4.7 d(off) 关断延迟时间 ns t f 关断下降时间 ( 说明 4) ns 漏极 - 源极二极管特性 I S 漏极 - 源极二极管最大正向连续电流 * A I SM 漏极 - 源极二极管最大正向脉冲电流 A V SD 漏极 - 源极二极管正向电压 = 0 V, I SD = 00 A V t rr 反向恢复时间 = 0 V, V DD = 40 V, I SD = 00 A, ns Q rr 反向恢复电荷 di F /dt = 00 A/ s nc 注意 :. 重复额定值 : 脉冲宽度受限于最大结温 2. L = 3 mh, I AS = A, R G = 25, 开始 T J = 25 C 3. I SD 00 A, di/dt 200 A/ s, V DD BS, 开始 T J = 25 C 4. 本质上独立于工作温度的典型特性 2

05 - V/ C J = 64 V, = 0 V - - I DSS 零栅极电压漏极电流 A = 64 V, T C = 50 C - - 500 I GSS 栅极 - 体漏电流 = ±20 V, = 0 V - - ±00 na 导通特性 (th) 栅极阈值电压 =, I D = 250 A 2.5-4.

3 典型性能特征 ID, Drain Current[A] 图. 导通区域特性 s Pulse Test 2. T C = 25 o C , Drain-Source Voltage[V] 图 2. 传输特性 , Gate-Source Voltage[V] 图 3. 导通电阻变化与漏极电流和图 4. 体二极管正向电压变化与源极电流栅极电压的关系和温度的关系 3.0 = 5.0V 0.0V 8.0V 7.0V 6.5V 6.0V 5.5V ID, Drain Current[A] = 0V s Pulse Test 75 o C -55 o C 25 o C RDS(ON) [m ], Drain-Source On-Resistance = 0V = 20V *Note: T C = 25 o C I D, Drain Current [A] IS, Reverse Drain Current [A] o C 25 o C. = 0V s Pulse Test V SD, Body Diode Forward Voltage [V] 图 5. 电容特性图 6. 栅极电荷特性 0 Capacitances [pf] *Note:. = 0V 2. f = MHz C iss C oss C rss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd , Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] = 6V = 40V = 64V *Note: I D = 00A Q g, Total Gate Charge [nc] 3

250 s Pulse Test 75 o C -55 o C 25 o C RDS(ON) [m ], Drain-Source On-Resistance 2.5 2.0.5 = 0V = 20V *Note: T C = 25 o C.

4 典型性能特性 ( 接上页 ) 图 7. 击穿电压变化与温度的关系 BVDSS, [Normalized] Drain-Source Breakdown Voltage = 0V 2. I D = 250 A T J, Junction Temperature [ o C] RDS(on), [Normalized] Drain-Source On-Resistance 图 8. 导通电阻变化与温度的关系. = 0V 2. I D = 00A T J, Junction Temperature [ o C] 图 9. 最大安全工作区图 0. 最大漏极电流与壳温的关系 ID, Drain Current [A] Operation in This Area is Limited by R DS(on). T C = 25 o C 2. T J = 75 o C 3. Single Pulse ms 0ms DC 00us 0us , Drain-Source Voltage [V] ID, Drain Current [A] R JC = 0.6 o C/W = 0V T C, Case Temperature [ o C] 图. Eoss 与漏源极电压的关系图 2. 非箝位感性开关能力 E OSS, [ J] IAS, AVALANCHE CURRENT (A) 0 T J = 50 o C T J = 25 o C , Drain to Source Voltage [V] t AV, TIME IN AVALANCHE (ms) 4

5-00 -50 0 50 00 50 200 T J, Junction Temperature [ o C] 图 9. 最大安全工作区图 0. 最大漏极电流与壳温的关系 ID, Drain Current [A] 2000 000 00 0 0. Operation in This Area is Limited by R DS(on).

5 典型性能特性 ( 接上页 ) Z Thermal JC (t), 热响 Response 应 [ o C/W] [Z JC ] 图 3. 瞬态热响应曲线 Z JC (t) = 0.6 o C/W Max. 0.0 Single pulse 2. Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z JC (t) t Rectangular, 矩形脉冲持续 Pulse 时间 [ 秒 Duration ] [sec] P DM t t 2 5

Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z JC (t) 0.

6 I G = 常量图 4. 栅极电荷测试电路与波形 R L 90% R G V DD V 0 DUT 0% t d(on) t r t d(off) tf t on t off 图 5. 阻性开关测试电路与波形图 6. 非箝位电感开关测试电路与波形 6

7 R G DUT I SD Driver + _ Same Type as DUT L V DD dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = Gate Pulse Period 0V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop 图 7. 二极管恢复 dv/dt 峰值测试电路与波形 7

Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body

8 机械尺寸图 8. TO-220 模塑 3 引线 Jedec 变体 AB (Delta) 封装图纸作为一项服务, 提供给考虑飞兆半导体元件的客户具体参数可能会有变化, 且不会做出相应通知请注意图纸上的版本和 / 或日期, 并联系飞兆半导体代表核实或获得最新版本封装规格并不扩大飞兆公司全球范围内的条款与条件, 尤其是其中涉及飞兆公司产品保修的部分随时访问飞兆半导体在线封装网页, 可以获取最新的封装图纸 : 8

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Microsoft Word - Atmel-45136A-Pick-Best-Microcontroller-Strom-Eiland-Flodell_Article_CS

Microsoft Word - Atmel-45136A-Pick-Best-Microcontroller-Strom-Eiland-Flodell_Article_CS 如何为您的下一款设计选出最好的 8 位或 32 位微控制器作者 : Atmel 产品营销高级总监 Oyvind Strom Atmel 产品营销总监 Andreas Eieland Atmel 研发工具部门高级产品营销经理 Henrik Flodell 不久之前, 嵌入式系统还是既昂贵