率 Reporter: Date: May 11,2006 1
率 LED 率 LED 率 LED 度 論 2
LED 3
LED 4
GaN 率 率 5
Conventional versus Power LED From Lumileds 6
TYNTEK 40 mil Power chip 7
臨 n1 sin 1 = n2 sin 2 n2 2 n1 1 8
Light Extraction Absorbing substrate Transparent substrate GaN:22 AlGaAs=17 9
Lumileds AlGaInP LED 率 10
Improved design of LEDs to increase efficiency 11
Lumileds AlGaInP LED From Lumileds 12
Truncated-inverted-pyramid LED Cree TIP InGaN LED 64 13
Cree Standard and TIP LED 14
Osram s InGaN Chip 15
AlGaInP LED 16
InGaN LED 17
Two Best High Power LED Chip Structures 18
Relative light output of LEDs as a function of the junction temperature 19
High power LED chip design Flip chip designs have lower thermal resistance and lower absorption and so favorable for integration 20
Series chip Vf@20mA= 9V 21
Array LED Vf@20mA=28V 22
Increase in the extraction efficiency 23
Nichia s high power LED 24
Increase in the extraction efficiency 25
Nichia s high power LED 26
InGaN Wafer bonding Increase in the extraction efficiency 率 度 良率 27
Wafer bonding Increase in the extraction efficiency 28
Photonic Crystal LEDs From Lumileds 量 行 29
Photonic Crystal LEDs see Wierer et. Al., Appl. Phys. Lett., Vol. 84 (19), 3885 (2004). 30
率 LED Wafer Bonding Process Chip Process Flip chip Process 31
LED Wafer Bonding - mirror substrates Metal with high reflectivity Metal Si Substrate >90% for red and yellow wavelengths Si with excellent thermal conductivity (Wcm -1 K -1 ) Si :1.68, GaAs :0.47, GaP : 0.77 From VPEC 32
VPEC s Wafer Bonding Process (a)wafer bonding Uniaxial Pressure (b)after bonding Mirror Substrate Si Substrate LED epi-layer GaAs substrate metal Bonding Low Temperature Mirror substrate LED epi-layer GaAs substrate Bonding interface (c)gaas substrate removal Mirror substrate LED epi-layer (d)patterned LED Mirror substrate LED epi layer Backside-Contact N-Contact 33
WB-LED After bonding and removing GaAs sub. High Bonding Yield From VPEC 34
TS-Type LED by Lumileds (HP) GaP wafer bonding Need second growth Need to handle thin epi-layer High bonding temperature (700 C ~) and long bonding time MOCVD LED structure 3µm GaAs-Sub. 350µm VPE regrowth GaP epi-layer 40µm LED structure 3µm GaAs-Sub. 350µm GaP epi-layer LED structure GaP epi-layer LED structure GaP-Sub. 350µm wafer bonding GaP epi-layer LED structure GaP-Sub. From VPEC 35
InGaN chip 流 Lift off Lift off E-Gun E-Gun Al 2 O 3 (2160A) Ti/Al/Pt/Au RIE Mesa(8000A) TCL Hard Mask E-Gun TCL(Ni/Au) Ni(3000A) P-GaN InGaN InGaN Epi Wafer N-GaN Sapphire 36
Wafer bonding 37
After bonding and removing Sapphire substrate 38
Diagram of Flip chip From Dr. R. Scott Kern Lumileds Lighting 39
Thermal conductivities of the materials 40 (W/m K)
Models for Flip chip bonding LED Flip chip 量 : 良率 ( 度 ) 1mm 數 度 度 Ultrasonic Flip chip 41
Resistance of flip-chip bonding 42
Process time of flip-chip bonding 1.2sec/chip 43
Process Diesynge Process Wafermaunter DieSynge Washing irradiation Wafer Diesnge wafer Washing Process D cleaning BUMP BONDING F ip Chip Bonder Au-Bump Bonding US Interconnection Submount Process 44
Scriber Laser or Diamond Sapphire Sapphire Breaking 45
切 雷 切 46
利 率 度 精度 度 47
Au-Sn phase diagram Eutectic Point AuSn(80/20):282 Eutectic Point AuSn(10/90):217 48
利 度? < 10um 49
利 串聯 連 50
利 料 51
度 率 52
US 量 狀 US POWER 量 力 量 Hi pin count LSI Interconnection 量 度 量 度, 度 Temp Force 量 量 率 chip / fine pin count 來 PIONEER FA CORPORATION 53
Metallization N-type P + SiOx Q.W. P-GaN Ohmic layer Reflector 54
Process Issues of Flip chip Diffusion Metallization N + N + P-type Metal 55
Metallization (for Flip chip) Sputter E-Gun Electroplating 56
Stud Bumps From PFA 57
Stud Bumps from Polamar 58
Stud Bumps From PFA 59
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Underfill 61
Problems of Flip chip bonding 62
Stud bump Bonding 參數 度 力 狀 精 度 63
Flip chip Bonding 參數 : Temperature Vf, 度 US POWER IR 力 IR, 64
Damage from Flip chip Bonding 65
Key of US Flip chip 不 度 料 漏 流 粒 不 料 度 率 粒切 粒不 66
LED 度 漏 流 亮度 力 67
Zener Diode N-type P + Metal 68
Zener Diode N + N + P-type Metal 69
ESD Submount IV curve Zener 70
Zener Submount IV curve 14mil Flip F chip IV curve 71
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ESD Testing HBM IR@5V<10 A 73
Lumileds LED 74
High Lifetime (14mil Flip chip) Test of 1008 hours 75
Blue chip without Zener diode 76
Flip chip Thermal Stability 77
High current Testing (Chip & FC) 78
率 LED 79
a typical indicator LED From Lumileds 80
Power LED From Lumileds 81
Thermal Resistance Model From Lumileds 82
Thermal Resistance Series n Θ total = Σ i+1 Θ i T Junction chip total = j-c + c-b + b-a die attach T j j-c T s Junction to Case (slug) submount submount attach c-b Case to Board leadframe/slug T i b-a Board to Ambient solder T a T board Courtesy of Joe Mazzochette, Lamina Ceramics 83
High Power LED Package Structure For Wafer Bonding product or Flip chip 84
High Flux Light Emitting Diode 力 85
Low-Temperature Cofired Ceramics (LTCC) From Lamina ceramics 86
From welwyn-tt.co.uk 87
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Lumileds Luxeon III 90
276lm @15.4W,18 lm/w From NeoPac From PIER 91
Power Chip Market 40mil~ 350mA~ 14mil~24mil 20mA~100mA 12~14mil 5mA~20mA 92
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LCD LED backlight NEC 21 3 LED backlight Sony 12 1 backlight 94
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Taipei Municipal Social Education Hall 98
論 率 99
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