DW01A

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1 General Description 概述 The DW01B battery protection IC is designed to protect lithium-ion / polymer battery from damage or degrading the lifetime due to over current for one-cell lithium-ion / polymer battery powered systems. such as cellular phones The ultra-small package and less required external components make it ideal to integrate the DW01B into the limited space of battery pack. The accurate ±50mV overcharging detection voltage ensures safe and full utilization charging. The very low standby current drains little current from the cell while in storage DW01B 电池保护 IC 是专为保护锂离子 / 锂聚合物电池损坏, 或因过电流使用而降低寿命之锂电池保护系统 诸如蜂窝电话 DW01B 使用超小型封装, 减少所需的外部组件 ; 非常适用于空间有限的电池组 准确的 ±50mV 的过充电检测电压, 确保安全和充分充电 及储存时极低的待机电流 Features 特点 High-accuracy voltage detection circuit 高精度电压检测电路 Overcharge detection voltage 过充电检测电压 Overcharge release voltage 过充电解除电压 Overdischarge detection voltage 过放电检测电压 Overdischarge release voltage 过放电解除电压 Discharge overcurrent detection voltage 过放过电流检测电压 Battery short-circuiting detection voltage 电池短路检测电压 3.6V to 4.4V Accuracy 精度 ± 50mV 3.6V to 4.4V Accuracy 精度 ± 50mV 2.0V to 3.0V Accuracy 精度 ± 75mV 2.0V to 3.4V Accuracy 精度 ± 75mV 0.05V to 0.3V Accuracy 精度 ± 20mV 0.82V to 1.75V Accuracy 精度 ± 100mV Detection delay times are generated by an internal circuit (external capacitors are unnecessary) 内置延迟电路, 不需要外接电容即具有延迟保护的功能 Overcharge detection delay time 过充电检测延迟时间 Overdischarge detection delay time 过放电检测延迟时间 Discharge overcurrent detection delay time 过放放电流检测延迟时间 Battery short-circuiting detection delay time 电池短路检测延迟时间 Typical. 典型值 Typical. 典型值 Typical. 典型值 Typical. 典型值 110ms 55ms 7ms 400μs www 1 DS-Rev-1.0_cn

2 High voltage tolerance is used for charger connection pins, VM and CO pins are absolute maximum rating=28v 充电器充电端子 VM 端子与 CO 端子采用高压元器件设计, 额定电压值为 28V 0V battery charge function available 可选择向 0V 电池充电功能或是禁止 0V 电池充电功能 Wide operation temperature range 宽工作温度范围 Low current consumption 低消耗电流 -40 ~ +85 Operation mode 正常操作 Standby mode 待机电流 Small package 超小型封装 Lead-free / Green product 无铅 / 绿色产品封装 Green-mode 休眠功能 Self-recovery function 自恢复功能 Typ. 2.0 μa Max. 6.0 μa (25 ) Max. 0.7 μa (25 ) Max. 3.0 μa (25 ) SOT-23-6L Applications 应用 Protection IC for One-Cell Lithium-ion 单节锂电池保护电路 Lithium-Polymer Rechargeable Battery Packs 锂离子电池保护电路 2 DS-Rev-1.0_cn

3 Block Diagram 内部结构图 Absolute Maximum Ratings 绝对最大额定值 ( 无特殊标注时 Vss=0V,Ta=25 unless otherwise specified) Item 项目 Symbol 符号 Rating 参数范围 Unit 单位 Input voltage between VDD and VSS 电源电压 VDD VSS= -0.3 ~ VSS= +10 V VM pin input voltage VM 端输入电压 VM VDD - 28 ~ VDD V DO pin output voltage DO 端输出电压 VDO VSS ~ VDD V CO pin output voltage CO 端输出电压 VCO VDD - 28 ~ VDD V Electrical static discharge 静电放电电压 Operating Temperature Range 工作温度范围 Storage Temperature Range 储存温度范围 HBM 2 KV MM 200 V TOPR - 40 ~ + 85 TSTG - 55 ~ Remarks: Any operation condition exceeds the absolute maximum ratings will damage the IC. 附注 : 任何超过绝对最大额定值的操作条件, 并不能保证芯片处于正常工作状态, 并且会造成芯片劣化与损坏 3 DS-Rev-1.0_cn

4 Product Name List 产品电压版本 Over Over Discharge Over charge Over charge discharge discharge overcurrent Detection Release Product Detection Release Detection Voltage Voltage Voltage Voltage Voltage [Vdet1] [Vrel1] [Vdet2] [Vrel2] [Vdet3] 过放电解除电放电过电流检产品名称过充电检测电压过充电解除电压过放电检测电压压测电压 DW01B 4.3V±0.050V 4.1V±0.050V 2.5V±0.075V 2.9V±0.075V 150mV±20mV 0V Battery Charge Function 0V 充电 Available 允许 Mode Selection 休眠功能 Autorecovery 自恢复 Electrical Characteristics 电气参数 ( 无特殊标注时 TA = 25 unless otherwise specified) Item 项目 Operating voltage between VDD & VSS VDD 与 VSS 端工作电压 Between VM to VDD of the pull-up resistor VM 至 VDD 之间的上拉电阻 The pull-down resistor between VM to VSS VM 至 VSS 之间的下拉电阻 The COT output low pull-down resistor CO 输出低电平下拉电阻 CO pin Pch ON voltage CO Pch ON 电压 DO pin Nch ON voltage DO Nch ON 电压 DO pin Pch ON voltage DO Pch ON 电压 Current consumption 正常操作消耗电流 A low power consumption mode the quiescent current 低功耗模式静态电流 Symbol Test Condition Min. Typ. Max. Unit 符号 测试条件 最小值 典型值 最大值 单位 VDDop V RVMD VDD=1.8V,VM=0V Ta= K RVMS Ta= K Ta= M VCOH VDD=3.9V,Ta=25 ICO=10uA VDD-0.4 VDD V VDOL VDD=2.0V,Ta=25 ICO=10uA V VDOH VDD=3.9V,Ta=25 ICO=10uA VDD-0.4 VDD V IDD VDD=3.9V,VM=0V ua IPDWN VDD=2.0V ua 4 DS-Rev-1.0_cn

5 Electrical Characteristics 电气参数 ( 无特殊标注时 TA = 25 unless otherwise specified) DETECTION VOLTAGE 检测电压 Item 项目 Overcharge detection voltage 过充电检测电压 Overcharge release voltage 过充电解除电压 Overcharge hysteresis voltage 过充电滞后电压 Overdischarge detection voltage 过放电检测电压 Overdischarge release voltage 过放电解除电压 Discharging overcurrent detection voltage 过放电电流检测电压 Short detection voltage 负载短路检测电压 Charger detection voltage 充电器检测电压 0V charging allowed voltage threshold 0V 充電允許電壓值 (0V charging allowed type) (0V 充電允許型號 ) 0V charging prohibition voltage threshold 0V 充電禁止電壓值 (0V charging prohibition type) (0V 充電禁止型號 ) Symbol 符号 Test Condition 测试条件 Min. 最小值 Typ. 典型值 Max. 最大值 Unit 单位 Vdet1 R1= V Vrel1 R1= V Vhys1 R1=100 Vhys1=Vdet1-Vrel V Vdet2 VM=0V,R1= V Vrel2 R1= V Vdet3 VDD=3.0V, R2=1.0k V Vshort VDD=3.0V V Vchg VDD=3.0V, Ta= V V0V_chg Ta= V V0V_inh VM=2.0V V Ta=25 5 DS-Rev-1.0_cn

6 Electrical Characteristics 电气参数 ( 无特殊标注时 TA = 25 unless otherwise specified) DELAY TIME 延迟时间 Item 项目 Symbol 符号 Test Condition 测试条件 Min. 最小值 Typ. 典型值 Max. 最大值 Unit 单位 Overcharge detection delay time 过充电检测延迟时间 TVdet1 VDD=3.6V 4.4V ms Overcharge release delay time 过充电解除延迟时间 TVrel1 VDD=4.4V 3.6V ms Overdischarge detection delay time 过放电检测延迟时间 TVdet2 VDD=3.6V 2.4V ms Overdischarge release delay time 过放电解除延迟时间 TVrel2 VDD=2.4V 3.6V ms Discharging overcurrent detection VDD=3.0V, TVdet3 delay time 过放电电流检测延迟时间 VM=0V 0.2V ms Discharging overcurrent release VDD=3.0V, TVrel3 delay time 过放电电流解除延迟时间 VM=0.2V 0V ms Over current discharge protection delay time 过电流放电保护延迟时间 TEDI Ta= ms Over current discharge recovery delay time 过电流放电恢复延迟时间 TEDIR Ta= ms Short detection delay time VDD=3.5V, Tshort 负载短路检测延迟时间 VM=0V 1.0V us Charger detection voltage VDD=3.0V, Vchg 充电器检测电压 Ta= V Pin Configuration and Package Marking Information 管脚描述 Package 封装型式 Pin No. 管脚号 Symbol 符号 Description 管脚描述 1 DO Over-discharge MOSFET Gate control terminal 放电控制用 MOSFET 栅极连接端子 2 VM Input terminal connect to charger and system ground 输入端连接到充电器和系统接地 3 CO Over-charge MOSFET Gate control terminal 充电控制用 MOSFET 栅极连接端子 4 NC No connection 空脚 5 VDD Battery positive terminal 正电源输入端子 SOT-23-6L 6 VSS Battery negative terminal 负电源输入端子 6 DS-Rev-1.0_cn

7 Type Application Circuit 典型应用电路图 Symbol 符号 Components 器件名称 Function 功能 Min. 最小值 Typ. 典型值 Max. 最大值 Unit 单位 Remarks 备注 R1 Resistor Current limit noise filtering 电阻器限流与滤波稳压 100 1K *1 R2 Resistor Current limit ESD protection 电阻器限流与静电保护 300 1K 2K *4 R3 Thermistor Temp. protection 热敏电阻温度保护 k C1 Capacitor Noise filtering 电容器滤波稳压 F *3 M1 N-MOSFET Discharge switch Nch 场效应管放电控制开关 *2 M2 N-MOSFET Charge switch Nch 场效应管充电控制开关 *2 *1:R1 is a single stage RC filter,the higher resistance of R1,the better the filtering effect,if the R1 resistance higher than the recommended value, it will affect the internal detection circuit and the voltage detection accuracy will out of specification. We suggest using the recommended resistance in application. R1 电阻主要提供一个单极的 RC 滤波器,R1 的电阻愈高, 滤波稳压的效果愈佳, 若选择太高的 R1, 将影响内部分压电阻的阻 抗, 进而会影响过充电压与过放电压判断之精度, 建议选择建议的电阻值 *2:The absolute maximum rating of CO and VM is 28V, customer could choose 20V or 30V dual N MOSFET switches for different application. 保护 IC 的耐压为 28V, 可选择业界常用的 20V 或是 30V 耐压的双 N 沟道 MOS 管 *3:Add a C1 capacitor between VDD and VSS could filter conduction and radiation noise. 在 VDD 与 VSS 端间加一个 C1 电容, 可滤除外界的传导与辐射噪声 *4:R2 resistor could have a current limit function and limit charger current surge. 在 R2 处加一个电阻可以限制充电器瞬间的电流脉冲 7 DS-Rev-1.0_cn

8 Normal Operation 功能说明 The DW01B monitors the VDD power supply voltage relative to VSS detecting the overcharge and over-discharge conditions. It also monitors the VM voltage to detect the discharge over-current and load short circuiting to protect the battery cell. In normal operation, the VDD should be in the range from the over-charge detection voltage Vdet1 to the over-discharge voltage Vdet2, and the VM pin voltage is in the range from discharge over-current voltage Vdet3 to charger detection voltage Vchg. In normal condition, the internal pull-up resistor(rvmd)from VM pin to VDD is disconnected and the internal pull-down resistor(rvms)from VM pin to VSS is also disconnected. DW01A 可检测 VDD 到 VSS 的过充电压和过放电压情形 还可以监测 VM 的电压, 并检测放电过电流 和负载短路保护电池单元 在正常操作中,VDD 应该在过充电检测电压 Vdet1 的到过放电电压 Vdet2 的 范围内, 并且 VM 电压的范围是从放电过电流电压 Vdet3 到充电器检测电压 Vchg 在正常情况下, 从 VM 到 VDD 内部上拉电阻 (RVMD), 或从 VM 和 VSS 内部下拉电阻 (RVMS) 则也会关断 Notice : Discharging may not be enacted when the battery is first time connected. To regain normal status, VM and VSS terminal must be shorted or the charger must be connected. 附记 : 当第一次连接电池的时候, 有时不能进行放电 要恢复正常状态, 将 VM 和 VSS 端子短路或将充电器连接上去即可恢复正常 Over-Charge Condition 过充电保护状态 When the battery voltage is greater than over-charge voltage(vdet1)and have a TVdet1 time duration from a normal operation condition, the over-charge condition hold and the CO pin will output from logic H to logic L to disconnect the battery charging path. It will turn-off the external MOSFET and the charging status stopped. 当正常操作条件下, 电池电压高于过充电电压 (Vdet1), 延迟时间超过 TVdet1, 及过充电状态保 持时, 当 CO 端子电位从 H 到 L, 则会断开电池充电路径 这将关断外部 MOSFET 开关和终止充电 It will release the over-charge condition in the following conditions. If the battery voltage less than Vrel1 from the over-charge condition, the CO will output logic H to turn on the external MOSFET to resume the charging path. In the over-charge condition, the discharge over-current and load short circuiting function will be disabled until the battery voltage falls below the overcharge detection voltage. 8 DS-Rev-1.0_cn

9 It is because that the internal resistance of battery which will trigger the discharge overcurrent and load short circuiting function in the time when over-charge condition enabled. 在以下的条件, 会停止过充电情况 如果在过充电情况下电池电压小于 Vrel1,CO 将输出为 H, 将打开外部 MOSFET 恢复充电路径 在过充电状态, 放电过电流保护和负载短路保护的功能将启动, 直到电池电压低于过充电检测电压才会恢复 这是由于当有过充电情况时, 电池的内部电阻将会触发放电过电流保护和负载短路保护功能 In over-charge condition, the internal pull-up resistor(rvmd)from VM pin to VDDis disconnected and the internal pull-down resistor(rvms)from VM pin to VSS is also disconnected. 在过充电情况下, 内部上拉电阻 (RVMD) 从 VM 到 VDD 断开, 及内部下拉电阻 (RVMS) 从 VM 到 VSS 也断开 Over-Discharge Condition 过放电保护状态 The DW01B single-cell lithium protect IC monitors the VDD voltage to detect the overdischarge state from normal operation condition. If the VDD voltage becomes lower than the Vdet2 and continues for the over-discharge delay time TVdet2 from normal operation condition, the DO pin will output L to disable the external MOSFET and the discharging stopped. DW01B 单节锂电池保护 IC, 在正常运行状态检测过放电保护状态 如果 VDD 电压低于 Vdet2 电压下,DO 端子电位为 L, 过放电延迟时间超过 TVdet2, 则关断外部 MOSFET 及停止放电 If a charger is connected and the VDD voltage is greater than over-discharge release voltage Vrel2, the over-discharge condition released. In over-discharge condition, the charging path is connected by the parasitic diode of discharge controlled MOSFET. 如果连接充电器后 VDD 电压大于过放电解除电压 Vrel2, 则为过放电解除状态 在过放电状态下, 充电路径连接是经由放电控制 MOSFET 的寄生二极管 9 DS-Rev-1.0_cn

10 When a battery in the over-discharge condition, if VDD is greater than Vrel2 and the VM is higher than Vchg, the over-discharge condition is released. When a battery in the overdischarge condition, if VDD is greater than Vdet2 and the VM is lower than Vchg, the overdischarge condition is released. 当电池处于过放电的状态, 当 VDD 大于 Vrel2 及 VM 电压高于 Vchg, 过放电状态将解除 当 VDD 大于 Vdet2 及 VM 电压低于 Vchg, 过放电状态将解除 When the over-discharge condition hold, and the voltage difference between VM and VDD is less than 1.36V, the current consumption is reduced to the power-down current consumption 0.7uA in typical. 当过放电保护时, 并且 VM 和 VDD 之间的电压差小于 1.36V,Power-down 消耗电流会降低到典型值 0.7uA In over-discharge condition, the VM pin is connected to VDD by internal pull-up resistor (RVMD) and the internal pull-down resistor(rvms)from VM pin to VSS is disconnected. 在过放电保护时,VM 端子连接到 VDD, 通过内部上拉电阻 (RVMD) 和内部下拉电阻 (RVMS) 从 VM 端子与 VSS 断开 When the MOSFET is off, VM pin voltage is pulled up by the resistor to VDD in the IC, at this time, the power consumption is reduced to the lowest. This condition is called the Green MODE. 当 MOSFET 关断时, 电阻器到 VDD 会拉升 VM 端子的电压, 在这段时间内, 功耗减小到最低 这种情况被称为 绿色模式 Over-current Condition 过电流保护 There are 3 kinds of over-current condition. One is the discharge over-current condition and another is the load short-circuiting condition and the other is charge over-current condition. 过电流有 3 种情况 : 一种是放电过电流情况, 一种是在负载短路情况, 而另一种是充电过电流情况 10 DS-Rev-1.0_cn

11 The DW01B monitors the VM pin voltage to detect the over-current and load shortcircuiting condition. If VM pin voltage is greater than Vdet3 and continues to discharge overcurrent delay time TVdet3, the over-current condition enabled and the DO pin output logic L to disable the discharging path. At the same time, the discharging is stopped. DW01B 监控 VM 的电压, 来检测过电流和负载短路状态 如果 VM 电压大于 Vdet3, 并超过放电过流延迟时间 TVdet3, 则启动过电流保护,DO 输出电位为 L 关闭放电回路 同时停止放电 In over-current condition, the internal pull-up resistor from VM pin to VDD(RVMD)is disconnected and the VM pin is connected to VSS by internal pull-down resistor (RVMS). However, the VM pin is pull-up to VDD by external load resistor. When the load is disconnected, the VM pin is pull-down to VSS by internal resistor. 在过电流状态下,VM 到 VDD 内部上拉电阻 (RVMD), 及 VM 到 VSS 通过内部下拉电阻 (RVMS) 断开 然而, 通过外部负载电阻 VM 上拉至 VDD 当负载断开, 通过内部电阻 VM 下拉到 VSS If the VM pin voltage falls below the charger detection voltage Vchg under normal condition, and it continues and longer than the overcharge detection delay time TVdet1, the CO pin will disable the charging path by disconnected the charge controlled MOSFET. The charge over-current detection is released when the voltage difference between VM pin and VSS becomes less than charger detection voltage Vchg. 如果在正常情况下,VM 电压低于充电器检测电压 Vchg, 并且时间超过过充电检测延迟时间 TVdet1,CO 将断开控制 MOSFET 停止充电 当 VM 和 VSS 之间的电压差, 小于充电器检测电压 Vchg, 充电过流检测被解除 11 DS-Rev-1.0_cn

12 Timing Diagram 12 DS-Rev-1.0_cn

13 13 DS-Rev-1.0_cn

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