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渍裔
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1 精 Precise Electroforming Technology & its Application Outline 精精領論

2 (sputtering) 金 (thermal evaporation) 沈 (CVD) 精 (electroforming) (electroless plating) (wet etching) 精金!! 理度流度 ph 濾. 力狀. ( ) 異金離流金利理金 ( 金 ) 度離金

3 ( ) 異 ( ) 利行金離金 ( ) 類金 ( ) Ni, Cu, Cr, Zn, Sn, Au, Ag, 金 ( ) Ni 金 (Co, Fe, Mn, W, P); Cu 金 (Zn, Sn); Sn 金 (Pb, Cu, Au, Ag), ( ) Ni, Ni-P, Ni-Co/Al 2 O 3, SiC, Diamond, PTFE; Cu/Diamond, 領精不易零 1. 狀 2. 量 3. 精度 4. 例類不易例精不易例雷例量例例 (stencil) 零濾量例金例

4 Principle of an Electroforming Technology Power supply 技術發展要點與步驟 1. 微結構加工技術 e- 2. 電化學沉積技術 e- - 硬體設備建立 - 化學溶液調配與管理 2e- 2e- Ni Anode Ni2+ Ni H2 Ni dissolution 3. 尋求有利基的研發載具 - 光電半導體精密機械應用 H2 Cathode H2 H2 Ni deposition H2 evolution 2H2O + 2e- H2 + 2OH台灣師範大學機電科技學系 -7- Lithographie (lithography) 光刻 alvanoformung (electroforming) 電鑄 LIGA製程 G Abformung (molding) 模造 (微結構之製造法) 1. 光刻 Absorber structure Mask membrane Resist Base plate 2. 顯影 Resist structure 4. 金屬模仁 3. 電鑄 Metal Resist structure Electrical conductive base plate Mould cavity 6. 脫模 5.模造 Plastic (moulding compound) Plastic structure Source: Institut für Mikrotechnik Mainz (IMM), Germany 微結構, IMT 高深寬比( 高深寬比(high aspect ratio)的微結構 ratio)的微結構台灣師範大學機電科技學系 -8-

5 LIGA 易 UVX-ray 3. 易 4. 率不留 7. 不 8. 不 9. 異 10. 不度力 ( 不裂落 ) 11. 易 : : 不 2. 狀不異 2. 易不留, LIGA 精,, 21(6), 15-27, 2000 Fabrication of Mold Insert & Mass production Design Mold insert fabrication CNC-µMachining µedm Si-processes Wet etch Dry etch DEEMO (SIGA) High resolution techniques LIGA LIGA-like 精 Duplication processing Injection moulding Hot embossing DEEMO: Dry Etching, Electroplating, Moulding

6 台灣師範大學機電科技學系 -11- mass transport mainly by convection mass transport mainly by diffusion Electrolyte Laminar flow Microstructured polymer layer Conducting substrate as cathode Mechanisms of mass transport to recessed microelectrodes of different lateral dimensions during electroforming 台灣師範大學機電科技學系 -12-

7 參數理參數 RIE 流度率力率離流度 ph 參數流金度度例度濾金度濾理理理流力降精度理!! (seed layer) (1) (5) 雷金 (2) (6) 離 (3) 金金 (7) substrate photoresist seed layer nickel (4) (8) () LIGA 狀沈

8 不易 4. 力度 5. 易 6. 不離 7. 不 : 1. 不不留, LIGA 精,, 21(6), 15-27, 2000 (Pulse reverse) 流 Copper I DC 流 t Si Trench width 25 µm Trench width 20 µm Trench width 15 µm I PP t I PR t Trench width 10 µm Trench width <10 µm Trench width <5 µm Seed layer of sputtered Ti/Cu 5000Å

9 見理力力流度金流度度

10 ( a ) ( b ) 易流 (a) (b) a 流度 b a/b=1/4 overplating Plating stopped at ~2/3 of the total depth a/b=6/1 不輪廓金

11 金 ( a ) ( b ) 沈度異 (a) 良 (b) 良力不度不流度 ( a ) ( b ) (a) 流度 (b) 流度

12 度金金金 ( a ) ( b ) 兩

13 1. ph7 ( 不 ) () 4. 度 ( ) 5. 粒量連濾 (< 0.2µm) 6. 不 % 流率 ( 易 ) 8. 良 (throwing power) 9. 度 10. 流易流 11. 利 (Shield) 流度異, LIGA 精,, 21(6), 15-27, 2000 路流 PC 0.1µm 濾 Electroforming Apparatus for LIGA Process Installed at ITRC

14 量 Electroforming Apparatus µgalv 750 developed by IMM Membrane Galvanoforming cell Substrate carrier Nickel anodes Membrane filter Selective purification Auxiliary tank Bath heating Rotary pump Depth filter Flow meter Concentration meter for nickel ions, boric acid, and wetting agent Tanks and dosing pumps for concentrated nickel sulfamate, boric acid, and wetting agent Schematic of electroforming apparatus µgalv

15 量 products/index.en.html 1. 流度粒 4. 濾度 ph 5. : 1. 度沈率力 2. 金 ( ) 3. 不 4. 易 5. 不量 6. 良 7. 度 8. 不流度 9. 歷易, LIGA 精,, 21(6), 15-27,

16 Characteristics and Application of Electroformed Metals Ni Metal microstructures, mold inserts Au Absorber material for X-ray mask Material for intermediate layers Cu Microstructures, Material for intermediate layers Ni-Fe High magnetic and corrosion resistance property Invar (64% Fe: 36% Ni) low thermal expansion property Thermal coefficient of expansion (TCE): Ni: /K Cu: /K Silicon: /K Invar: /K Permalloy (21% Fe: 79% Ni) high magnetic property Saturation magnetization: Nickel:6K Gauss Permalloy: 10K Gauss Ni-Co High strength property for punch mold Ni-Mn High hardness property for punch mold Ni-W High temperature resistance property Composition and operating conditions of electroforming bath (optional) Ni bath ( Modified from FZK ) Ni(SO 3 NH 2 ) 2 4H 2 O 420 g/l H 3 BO 3 40 g/l wetting agent 2-3 ml/l stress reducer 3-5 g/l current density 1-2 A/dm 2 temperature 52 ph filtering 0.2 µm anodes nickel pellet (S-depolarized) (usual option) wetting agent: dipentyl ester of sodium sulfosuccinic acid stress reducer:sodium saccharin Ni Fe bath ( I ) ( Modified from IRIT ) Ni(SO 3 NH 2 ) 2 4H 2 O 240 g/l Fe(SO 3 NH 2 ) 2 7H 2 O Ni/Fe 12/1 ~ 40/1 H 3 BO g/l wetting agent? stress reducer? stabilizer? current density 1-10 A/dm 2 temperature ph filtering 0.2 µm dual-anodes nickel pellet iron foil (usual option) wetting agent:dipentyl ester of sodium sulfosuccinic acid stress reducer:sodium saccharin stabilizer:ascorbic acid

17 Composition and operating conditions of electroforming bath (optional) Ni Fe bath (II) ( Modified from FZK ) NiSO 4 7H 2 O 0.77 M FeSO 4 6H 2 O M NiCl 2 6H 2 O? H 3 BO M wetting agent M stress reducer M stabilizer? current density 1 A/dm 2 temperature 50±0.5 ph 2.8 ±0.5 filtering 0.2 µm dual-anodes nickel pellet iron foil (usual option) wetting agent:sodium dodecylsulfate stress reducer:saccharin stabilizer:ascorbic acid Ni Fe bath (III) (Modified from M. G. Allen) NiSO 4 7H 2 O 200 g/l FeSO 4 6H 2 O 8 g/l NiCl 2 6H 2 O 5 g/l H 3 BO 3 25 g/l wetting agent 2-3 ml/l stress reducer 3 g/l stabilizer 1 g/l current density 1 A/dm 2 temperature ph filtering 0.2 µm dual-anodes nickel pellet iron foil (usual option) wetting agent:sodium dodecylsulfate stress reducer:saccharin stabilizer:ascorbic acid Composition and operating conditions of electroforming bath (optional) J Y Park and M G Allen, JMM 8 (1998)

18 Composition and operating conditions of electroforming bath (optional) Ni Co (Modified from IRIT) Ni(SO 3 NH 2 ) 2 4H 2 O 70 g/l Ni 2+ ion Co(SO 3 NH 2 ) 2 2H 2 O 6 %(wt.) H 3 BO g/l wetting agent? stress reducer? current density 1-5 A/dm 2 temperature 55 PH 4.0 filtering 0.2 µm dual-anodes nickel pellet cobalt foil (usual option) wetting agent:dipentyl ester of sodium sulfosuccinic acid stress reducer:sodium sulfosuccinic acid, benzene-m-disulfonate 離度力 ( ) 度 (Polarographic analysis) (Chromatographic analysis) 度 (Spectrophotometry) () 率 (HPLC) ( 量 ) (cyclic voltage stripping, CVS) ( 量 ) 力 (Surface tensiometer) (Contact angle meter) 力量度量力 Spiral contract-meter 度 Micro Vickers hardness tester (SEM) SEM/EDX (Energy dispersive X-ray spectrometry) (ICP-OES)

19 精領精 ( 料來 ) 濾識零精精零 CD DVD 精例 1. 連 (ferrule) 金 6. 精金 (metal mask) 9. (Flip-chip BGA) 10. Ref: 金

20 車精

21 零精金 vs. 金 (ITRC)

22 A MEMS probe card with 2D dense-arrayed metal tips Fei Wang et al, J. Micromech. Microeng., 18 (2008) 連金金列 ()

23 Ni stamper Ni stamper Lens profile in resist on glass or silicon UV-curable polymer glass Substrate Polymer film Ion etching UV exposure Lens profile etched into glass or silicon 輪 Fresnel ( 25) 5 µm 精, NTNU MOEMS Lab. 1 µm 3 量 10 µm25 HELLO

24 精

25 輪 Ni-PTFE PTFE Contact angle Ni film electroplated 67 PTFE plate 110 Ni-PTFE film electroplated 170 Source: 料

26 (Light Emitting Diode, LED) Sapphire p-electrode Sapphire substrate transparent contact layer p-gan MQWs n-gan n-electrode LED LED Process steps of GaN chip: (a) AlN deposition, (b) n-gan deposition, (c) MQW deposition, (d) p-gan deposition, (e) electroforming Cu, (f) bombarding the buffer layer through sapphire by KrF laser, (g) sapphire departed from the whole chip, (h) up-side down and n-face up, (i) surface roughing, (j) epoxy packaged (k) chip packaged

27 論精領 Please keep going & keep working! Thank you for your attention!

2

2.3. 率度 (bind electrode) 度 ( PTFE) 度 2-11 離 OH 2-5 [2] 2.3.1 2.3.1.1 領料 2-6 料料 ( 度金粒金 ) 理 [26] (1) 狀粒粒 26 600~3000Å 都量 97% (2000~3000 ) 奈率度異 0.004~0.006Ω cmcabot Vulcan XC72 2-12 SEM BET 240m