TB215.doc
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- 羿究 贲
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3 2 1 C5 10uF +28 V C4 R3 3.9k C8 R5 1k C18 R10 3.9k C23 10uF D1 5.6V D2 5.6V C11 10uF D3 5.6V L6 B P1 10k L3 P2 10k L5 P3 10k L7 B R2 9.1k R4 C6 SP201 C7 T1 R6 9.1k C9 R8 C12 L4 C13 T2 C16 T3 T4a R11 9.1k R13 C19 C20 T5 RF out C3 L2 1.8nH C2 6pF C10 R7 180 SQ201 C15 C14 C17 T4b R LQ801 C22 C21 R9 R14 L1 1.8nH C1 7pF A RF in in R A T1=UT34-10, L=1.8", through 2 of BN T2=UT47-25, L=1.8", through 2 of BN T3=UT34-50, L=1.8", through 2 of BN T4a=UT34-17, L=1.8", through 1 of BN T4b=UT34-17, L=1.8", through 1 of BN T5=UT34-50, L=1.8", through 1 of BN L3=24AWG, 15 times through 1 offt L4=24AWG, 14 times through 1 of FT L5=24AWG, 14 times through 1 of FT L6=22AWG, 9 times through FT L7=22AWG, 9 times through FT POLYFET RF DEVICES, INC Avenida Acaso Camarillo, CA, PH:(805) FAX:(805) Page Size: TB215, SP201->SQ201->LQ801, VDS=28V, Idq=2.2A, 20-0MHz, 10W, 35dB gain A 2 Revision: - October 17, 2007 Page 1 of 1 1
4 TB215 /Eff vs Freq, Vds=28V, Idq=2.2A Pout=10W TB215 Pout/ vs Pin, Freq=20MHz, Vds=28V, Idq=2.2A Efficiency Frequency in MHz TB215 Pout/ vs Pin, Freq=500MHz, Vds=28V, Idq=2.2A 20.0% 19.0% 18.0% 17.0% 16.0% 15.0% 14.0% 13.0% 12.0% Eff in % Pout in Watts Pout Pin in Watts TB215 Pout/ vs Pin, Freq=0MHz, Vds=28V, Idq=2.2A Pout in Watts Pout Pout in Watts Pout Pin in Watts Pin in Watts TB215 Harm vs Freq, Vds=28V, Idq=2.2A, Pout=10W TB215 IM vs Freq, Vds=28V, Idq=2.2A, PEP=10W Harm Atten in db nd 3rd IMD in db IM3 IM Frequency in MHz Frequency in MHz
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