untitled

Size: px

Start display at page:

Download "untitled"

恕张
5 years ago
Views:

1 IC 旅

2 08:30~09:00 09:00~09:50 參 ( ) 09:50~10:00 10:00~10:50!- 10:50~11:00 11:00~11:50 11:50 來!-CVD PVD 12:00~13:00 13:00~13:50 不?-CMP 13:50~14:00 14:00~14:50?- 李 14:50~15:00 15:00~15:50 IC 樂 15:50~16:00 16:00~16:50 來路 ( ) ( )

3 1. 2.!! 3. 來! CVD PVD! 4. 不! CMP! 5.! 6.IC 樂! 7. 來路!

4 !

7 e

10 2~20rpm 0.3~10mm/min

12 IC CMP CVD PVD

13 Speaker: Photo

17 (resin) (sensitizer) (solvant) (sensitizer) (solvant) 兩 Positive Resist Negative Resist

18 來 CrO 2 Cr substrate substrate

19 參雷 STEP 雷 Y X SCAN

20 不

21 來 Etch

23 PR + + Ions Broken bonds + PR + + Ion Atom

24 Broken bonds 料 SiO 2 HF:H 2 O=1:10 1:1000 NH 4 F+HF+H 2 O (BOE) PR PR Si HNO 3 + HF + CH 3 COOH Si 3 N % H 3 PO 4 boiling at C Al ( 金 ) HNO 3 : CH 3 COOH : H 3 PO 4 : H 2 O = 4 : 3.5 : 73 : 19.5 Titanium ( 金 ) H 2 O 2 + H 2 SO 4 W ( 金 ) H 2 SO 4 Etch Bias Etchant free radical Etch Byproduct Film Photoresist 3µm Substrate

25 Film Photoresist Substrate Film PR Substrate Film Photoresist Substrate Film PR Substrate

26 Etch Rate ( 率 ) = 度度

27 (S) ( ) = ER(a) / ER(b)

28 MFP 離 MFP Mean Free Path ( 路 ) ) 粒粒 (a) (b)

29 CVD

30 量量輻 F +9 F +9

31 流沈粒連

32 量 CVD 連

33 = 度度

34 度

35 SiO 2 金洞裡 PECVD 沈洞離沈離度料沈輪廓

36 gas gas Wafer Heater Heater Wafer

37 Speaker: PVD

39 金金

40 -1KV e 料 +

42 Speaker: CMP

43 料 Pressure Wafer Slurry Dispenser

44 Pressure Slurry Dispenser Wafer Polishing Pad stone Platen Wafer High Pressure, Fast Removal No Pressure, No Removal Film Polishing Pad

45 金 ILD 金 n + n + p + p + 金 p 磊 p + M-4 ILD-6 ILD-5 金 ILD-4 M-3 ILD-3 M-2 ILD-2 M-1 V ILD-1 i 金 a n + p + p + STI n + n + p 磊 p + p +

46 Speaker: Bench

47 什裡來什粒金離離留金量率漏, 降數降率率磊

48 度度度 HF H 2 O SC1 NH4OH H 2 OH 2 O 2 SC 2 HCl H 2 OH 2 O 2

49 理

50 O 3 HF/H 2 O vapor clean Ar/H 2

53 Speaker: 李

54 Introduction (Commercial Application) (electroplating) 理論 (equations related electroplating) (Electroplating Factors ) www2.austin.cc.tx.us/hongxiao/book.htm

55 New Commercial Application IC (IC interconnect technique) (Packaging bumping technique) (MEMS technique) Ref: J. Appl. Phys., Vol. 94, No. 9, 1 Pilar Stud Ref: 2005 ECTC Annual Meeting Ref: Jpn. J. Appl. Phys. Vol. 40 (2001) Ref: Journal of Electrochemical society, 152(1)G45-G49(2005)

56 IC --- Cu Dual Damascene

57 (ELECTROPLATING) (electroplating) 沈 (electrodeposition process) 利 (electrode) 流金 (solution) 行 20~30 金行金 (Cu) (Ni) (Cr) (Zn) (Cd) (Pb) 金 (Au) (Ag) (Pt) (Co) (Mn) ect

58 拉律 (1833) 離量量 1F(1mol ( e) 量 =1.602* -19 X6.02*10 23 =96,500 ), 1/n mol M +n ( 量數 = 數 * 數 ) Eg Cu 2+ 2e - Cu 若量 A A It Cu C 量 W 量 A/96,500 W/63.55

59 REDOX POTENTIAL E E Redox Potential E Nernst Ox n+ +ne - Red Eo: E = Eo *(RT/ nf) log ([aox]/[ared]) Cu 2+ +2e - Cu(s) ( ) E= *(RT/2F)log([aCu2+] /[acu]), 度 E= *(RT/2F)log(aCu2+/aCu) n=2,rt/nf=29.6 mv, 若 acu =1,, acu2+=0.1, E= *log(0.1/1)=29.6mV. 6mV E= =0.2804

60 (Cu Electroplating Mechanism) Bunching mechanism According the Bunching mechanism, the cupric ions will deposited on the kink and lower terrace site to form uniform film. Cu atom (a) (b) The uniformity (a) before and (b) after electroplating by metal 4 point probe measuring

61 ELECTROPLATING FACTORS (1)--- (SEED LAYER) 行利 Seed layer uniformity--provide uniform current density for electrodeposition Seed layer continuity--eliminate the seam in the sidewall of the trench Seed layer crystallization--high Cu(111) intensity i posed high h electromigration resistance Seed layer thickness--thinner seed layer needed for filling narrow trench

62 Electroplating Factors (2) EXTERNAL VARIABLES (time)) Power supply e- e- ELECTRICAL VARIABLES (potential) 流 (current) Ca athod e An node ELECTRLYTE VARIABLES 度 (temperature ) High temperature will result in additive destroyed. (Composition) p ) Affect the filling ability, crystallization orientation and film morphology. 度 (concentration) 流 (Flow velocity) 度 (conductivity) ELECTRODE VARIABLES Material Cu and Pt are usually applied as anode material. surface area surface state geometryt motion

63 Electroplating Factors (3) (Basic Set Up for Electroplating) 1) 2) 金金離路不金金 RuO 2 IrO 2 不金離例 3) 路金離 4) 流流

64 Cu Electroplating Configuration Cu Cu e - 2H 2 O O 2 +4H + + 4e - Anode (Ti net + Cu ball) Tunable Electric field Cooling Water Cu e - Cu 2H 2 O+2e- H 2 +2OH - Cathode(6 wafer) Y Z Flow Direction X 45 Cover & Force structure

Electroplating I-E Curve High current density in the edge Ref: Uziel Landau chemical engineering department and the Yeager center for electrochemical sciences

65 Electroplating I-E Curve High current density in the edge Ref: Uziel Landau chemical engineering department and the Yeager center for electrochemical sciences Case Western Reserve University Ref: SEMITOOL Low current density in the center Result from the current decay from the contact of the edge to the center of the wafer.

66 Electroplating Filling Profile Ref: SEMITOOL Ref: Uziel Landau chemical engineering department and the Yeager center for electrochemical sciences Case Western Reserve University

68 金

69 離參

70 離

71 金 CMP

73 來路 Speaker:

74 CPU CPU 神令 CPU 74

75 邏路邏兩邏 1 0 邏見邏異邏更邏

80 邏

81 BCD 7 IC

82 立不

83 行力理 CPU

84 切 (IN) (OUT) M L SOL 利行來 (INPUT) (OUTPUT)

85 CPU 1

86 CPU 2 ASCII Dec

87 1. for 迴圈 : for 迴圈是由初值運算式條件運算式與增量或減量運算式三部份組成, 彼此之間以分號隔開 (1) 初值 : 設定初值, 可由任何數值開始 (2) 條件 : 若條件為真, 則執行括號 { } 中的動作, 否則離開迴圈 (3) 增量 : 每執行一次迴圈內的動作後, 須將初值依增 ( 減 ) 量遞增 ( 減 ) 指令格式 for( 初值 ; 測試 ; 增量 ) { 動作 } 程式範例 main() { } int i,s=0; /* 宣告整數變數 */ for(i=0;i<=10;i++) /* 迴圈 10 次 */ 執行結果 s=55 s=s+i; /* 執行 */

88 2 while while 行 {} while 令 while( ) { } 例 main() { int i=0,s=0; /* 數數 */ while(i<=10) /* i<=10 行 */ { s=s+i; /* 行 */ i++; /* i */ } } 行 s=55

89 3 do-while do-while 行 {} 行 {} do-while 令 do { } while( ) 例 main() { int i=0,s=0; /* 數數 */ do { s=s+i; /* 行 */ i++; /* i */ } while(i<=10); /* i<=10 行 */ } 行 s=55

90 1 if if 若行 { } 若不行令 if ( ) { } 2 if-e ls e if-e ls e 若行 1 若行 2 令 if ( ) { 1 } e l s e { 2 } 例 m a in () { in t i; p rin tf("\n In p u t a n u m b e r(0-9 ):"); i = g e t c h e ( ) ; i f ( i % 2 = = 0 ) / * i 數? */ p rin tf(" \n % c is e v e n ",i); /* 若 i 數 e v e n */ e l s e p r i n t f ( " \ n % c i s o d d ", i ) ; / * 若 i 數 o d d * / }

91 例輪零零不 A: 10 B: 不 C: 良零 10 不良利邏若零數 Yb Yb A B C 邏 Yb=A AND B AND C 林數 AND ( ) Yb=A B C

92 若輪說 ( ) ( ) 零若輪數 Ya 數 Yc Ya Yb Yc Ya Yb 邏利邏 Ya=Yb OR Yc 林數 OR ( ) + Ya=Yb+ Yc

93 輪輪說年年輪數 Ym 輪利邏 Ya Ym Ya= NOT Ym 說輪輪林數 NOT( ) 數 Ya Ym (bar) Ya= Ym

94 輪路流 1. 參數 2. 邏流 3. 4.

95 路 ( )

untitled

untitled 逸老年 1 錄錄...I 錄...II... III... 1... 1... 1... 2... 4... 4... 4... 6... 7... 7... 7... 8... 9... 9...10 流... 11... 13...13...15...16...17... 21...21...21 度...27 論... 29...29 來...29 I 參料... 30 料...30