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法甄
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1 理 1.. MOSFET 理 ( 3. MOSFET 流 4. 臨 5. MOSFET 類 6. MOSFETd order effec 7. JFET 理 5-1 理 (raior 路流流量 (valve (a (b流理 5- 理 1

2 類理 biolar jucio raior, BJT field effec raior, FET BJT 利兩 E B E + B E B V EB V B 洞理 5-3 理 FET (chael 流 S 流 G S 流 G 洞流流洞 FET FET 理 5-4 理

3 FET(Jucio Field Effec Traior, JFET 金 (Meal-Oxide-Semicoducor FET, MOSFET (Source + + (Gae1 (Gae (rai (S 金 L (Meal + JFET 利 \ 度數度度 + (G (Semicoducor (Body (Oxide ( MOSFET 利 MOS 數路理 5-5 理 HONOR LIST BJToi coac raior Bell Laboraory(Joh Bardee, 來 Waler Braai, 立 William Shockley, 來年良利兩 1956 年諾理 FETBJT 了料料都 FET 年來料磊料降 FET 1985 年諾理 K. vo KlizigMOSFET 數量 (Ieger Quaum Hall Effec, IQHE 1998 年諾理異 (HEMT, high mobiliy raior 數量 Fracioal Quaum Hall Effec 參, " 數量 ", 諾,,. 年諾理利異諾 (Zhore I. lferov(herber Kroemer 路 (Jack S. lair Kilby 理 5-6 理 3

4 諾 1964 年諾理 for fudameal work i he field of quaum elecroic, which ha led o he corucio of ocillaor ad amlifier baed o he maer-laer ricile harle Hard Towe, Nicolay Geadiyevich Baov, lekadr Mikhailovich Prokhorov 雷 1973 年諾理 L. Eaki (uelig effec 年兩理 5-7 理 MOSFET 理 MOSFET(NMOS 路 (S (G 金 (Meal + + (Semicoducor (Body (Oxide ( MOSFET 類類量理量數 MOSFET 率行 (S (S (G ( (G (body ( 理 5-8 理 4

5 連兩串不 NMOS(cu off 狀 (S + (G (Body + (Oxide ( V GS = + V GS S V S > G I G = I 行理 5-9 理類金量了數洞復了洞了不都都來洞離裡論不 NMOS (S + (G + ( <V GS <V + 理 5-1 理 5

6 臨 V (hrehold volage ( 不來來數 (S + (G + VGS =V 累 (S + (G + V GS >V 累度 V GS -V ( ( V GS V + 理 5-11 理 (1 ( (3 (4 理 + + 行來 V GS V 了金量易量來度不了 (1 ( (3 (4 + (S + (G + ( 理 5-1 6

7 度度V MOSFET V S MOSFETV GS V V GS >V 度 S V S S 度不 I-V 便離來 1. I.8 (m.6.4. V GS = 4V 3.5V 3.V.5V V GS.V= V. V S (V.4 理 5-13 理 V G V S V GS V G 理 (a (b V G V V V S V GS V G V S V + I L 行 V S + + I 行 + V S 理

8 度(c (d V G V V G GS V S + 理 I V VS V V G V S V VGS GVS X 度 + 行 + 行 V S I V riode V S V SS L auraio V + 理 5-15 V G = V (ich offv S V G V L 略 L<<LXV GX = V V S 說兩 V XS 不 V S 度不 V S 流 I 不 V S V S 都落降 V S V G V VGS GV h VS X L V 度 + 行 + 理 5-16 理 8

9 不 V GS MOSFET I 1 8 (m 6 4 (a V SS (=V GS -V V GS =4V (b (c V GS =3.5V (d V GS =3.V V GS =.5V V GS.V V S (V 流 (VS i V ( GS 類 (alog Swich R S V ( GS 理 5-17 理 MOSFET 參數 MOS MOS 參數度數 ε MOSL( 度度 W( 度流流 MOS 流度率 µ 臨 (hrehold volagev MOSFET 參數 (bia volagev GS, V S, V S,V B (body 流 I 理 5-18 理 9

10 MOSFET 流裡 υ S υ S 流 υ S (S (G 金 (Meal + + (Semicoducor (Body (Oxide ( Q [/m ]: (S E(x Q(x J(x ( ε Q( x = Q = ( υ GS = L W >V [F/m ]: 理 5-19 理 E = υs 流度 [/m]=[/m] 流 i i L J = Qv d υ = Qµ E = µ ( υgs L W W = J W = µ ( υgs υs = k ( υgs υ L L S S (υ S r g S S υ i S iυ υ W = k ( υ L S S GS W = k ( υ L GS 1 Proce racoducace arameer: ec raio: W/L k = µ [/V ] 路 layou(lw 裡度度 υ S 來流來理 5- 理 1

11 υ S υ υ G GS υ G υ S i 度V υ υs ( υ GS ( υg + 行 + 1 ( υgs υs 度 i i 度 υ S W 1 W 1 = µ ( υgs υs υs = k ( υgs υs υ L L i υ S (arabola S Triode rigio υ G V or υ S -V 理 5-1 理流 υ G υ S υ G度 + V 行 υs + i υ G =V or υ Sa = -V υ Sa υ S i i 1 W 1 W = ( V = k υ L L µ υgs ( GS V Sauraio regio υ S υ Sa i υ S 流 ( -V 流 υ G V or υ S -V 理 5- 理 11

12 i υ Sa (= -V 1 8 (m 6 4 OFF riode =4V auraio =3.5V =3.V =.5V.V cuoff υ S (V 1 W i = k υ L (S cuoff S i a (m i 1 W = k ( υ L V GS V (V ( (G ON (S ( (G (S riode auraio (S 理 5-3 理 -chael MOSFET Noliear reiace i 1 8 (m 6 4 g S riode G υ Sa (= -V =4V auraio =3.5V r S S 1 W 1 = = k ( υgs υs r L S =3.V =.5V.V cuoff υ S (V G (G i G = VS Oe circui G ( i (S 1 W k ( υ L υ S V GS S S 理 5-4 理 1

13 臨臨 I 率更臨參數臨理了金裡論 V + (S (G + + X VGS =V 累 ( + 理 5-5 理 Fla-bad codiio V GS = qφ : Bedig of V GS =V urface oeial 理 + X qφ Q V V GS qv bi, B 理

14 臨 φ (buil-i oeial (deleio regio (ace charge regio x d qv bi = kt N N l = kt l + i N i N kt l i qφ qφ qv bi qφ qφ E g E E V x d = Si ε V q bi 1 N 1 + N 理 5-7 理 MOSFET Fla-bad codiio Threhold codiio Meal Oxide -Si Meal Oxide -Si x d E qφ qφ qφ E E V E V qv V = φ + φ = φ + φ φ = φ 理 5-8 理 14

15 V E Si Si 力連 ε E = ε E E ε E φ Si qn = ε = = E = qn Si E qn x = ε d x d qn qn ε (φ ε = ε E ε (φ 臨 Oxide ε Meal ε -Si ε (φ xd = E= E E E= qn Si kt N φ = φ = l q qφ qφ x d qφ 裡 body (S E E V V = φ + φ = φ + = φ + i qn ε (φ ε qn ε (φ 理 5-9 理 V 論 1. 臨 fla-bad codiio 不 V GS =V FB V FB 金. 度 V V = V = V FB FB + φ + + φ + 3. V 度 - mv/ qn ε (φ ε qn ε (φ 4. 臨來 V GS = MOSFET 狀理 5-3 理 15

16 5. (B(S 不 V SB 臨 body effec qv SB qφ : Bedig of V GS =V qv bi,b urface oeial 理 5-31 理 + qφ +qv SB X V SB 臨 qn ε (φ + VSB V = VFB + φ + qn ε = V + γ [ φ + VSB φ ] γ Body-effec arameer MOSFET 類 MOSFET 類 NMOS(-chael MOSFETPMOS (chael MOSFETV GS =(deleio ye (ehaceme ye 易 -chael ehaceme -chael deleio i -chael deleio -chael ehaceme (V -chael-chaeli 理 5-3 理 16

17 -chael MOSFET (S (G 金 (Meal + + (Semicoducor (Body (Oxide ( 路 (G (G (S i ( (S (body ( 理 5-33 理 PMOS 流 S 度 W 1 i = µ ( V υgs υs υ L W 1 = k ( υgs υs υs L υ G V i 1 8 (m 6 4 ε Q( x = Q = ( υ GS = S riode υ Sa (=V - =-4V auraio =-3.5V =-3.V =-.5V -.Vcuoff υ S (V V (G i G = ( i (S υ S 1 W i = µ ( V υgs L 1 W = k ( υgs L V υ G V 理 5-34 理 17

18 路說 -chael ehaceme -chael deleio -chael deleio -chael ehaceme S igial ircui 理 5-35 理 eleio-ye MOSFET =MOSFET MOSFET MOSFET 利離 Si 度 -chael deleio i I SS -chael deleio (V 理 5-36 理 18

19 理 5-37 理 MOSFETd order effec 度度 MOSFET 理 5-38 理 19

20 度 hael legh modulaio effec度v S V G V VGS GV VS X L V V Sa + 行 L + υ S 度兩 SX 不 (V Sa 流 BJTEarly Effec 類參數 lambda λ 1 = V λ 理 5-39 理度流 r o G 1 W k ( υ L GS V r o i 1 W = k ( υ GS (1 + λυs L S r o V I = 1 I λ 不度 V V 1 L L 1 理 5-4 理

21 (υ BS 臨 υ BS qφ : Bedig of urface oeial =qφ : Bedig of urface oeial Fla-bad codiio V GS = V GS =V + X Fla-bad codiio VGS = υ BS < qv bi, B qv bi, B X + V SB + 理 5-41 理 V SB 臨 V GB V = V GS + V SB = V FB + φ + V SB + qn ε (φ + V SB V = V = V PMOS V = V = V FB + φ + qn ε (φ + V [ φ + V φ ] + γ SB γ FB γ φ qn ε (φ + V [ φ + V φ ] + BS BS SB γ qn ε qn ε Body-effec arameer 理 5-4 理 1

22 度度 V k 都度數 1. V 度 - mv/ V = V FB + φ + b qn ε (φ B b kt N φ B b = l q i. k = µ µ ( T = µ ( T R T T R 1.5 µ = eτ * m T τ µ k 理 5-43 理度 i a T>T i (V υ S 理 5-44 理

23 MOSFET 1. (NMOS 例壘 (avalache breakdow 5~1V (G (S ( +. (NMOS 例流 uch-hrough 3. 5V + MOS(PMOS+NMOS BJTlach-u 理 5-45 理 MOSFET MOSFET 兩論 (gae caaciive effec 1. MOSFETriode WL g gd g. GS g gd = gd = WL 3 = 1 = WL (S (S + + (G (G + + ( ( 理 5-46 理 3

24 3. g = = gd 若 (body gb = WL 4. Overla caaciace: L ov.1~.µm1~3 g gd ov = WL ov ov L ov + + 理 5-47 理 (Jucio aaciace (B 路都不 b db = = b V 1+ V SB db V 1+ V B 例 NMOS 參數 =m, L=.4µm, W=1µm, L ov =.15µm, b = db =4fF, V SB = V B =V ov g gd b db 1.75 ff/µm.6 ff 3.6 ff.6 ff 1.4 ff 1.4 ff 理 5-48 理 4

25 (Jucio Field Effec Traior, JFET (Gae (Source + + L W (rai (S (Gae1 ( 率類 JFET iu 輻 (ream (G 理 5-49 理度 + 都度 R S 臨 (ich off (ich-off volage V S V GS < G V S > I G = I 1. I.8 (m.6.4. Triode regio: V GS = V -.5V -1.V. V S (V -1.5V V GS -.V.4 理 5-5 理 5

26 V GS V S I V S 藍 + S L I + G V S + S I + G V S 理 5-51 理 VS VGS = V 兩 V S V SS + S S V G =V G V S 度 LL X L V G <V I I 若 VSVG =V V S G V SS 理 5-5 理 6

27 V S 度 L 略度 L 略連度狀 V S 不說 X V V S 兩 V XS 不 (=V SS V S 都降 L V S V GS -V (=V SS 都 V S 流 I V S I V S 流 (coa-curre(auraio S 流 qv SS X L qv S 理 5-53 理 1 8 i 6 (m 4 V SS (=V GS -V V GS =V V GS =-.5V V GS =-1.V V GS =-1.5V V GS -.V υ S (V V I SS i (m 不 (V Triode υ GS υgs υgs 1 V V V = I SS i i = I SS υgs 1 V (1 + λυ NJFET 行 NMOS 類 PJFET 行 PMOS 類 S 理 5-54 理 7

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untitled (field effect transistor FET) 都不理不 FET (gate G ) FET (source S ) FET (drain D ) 流流不流流洞流利流來 n (n-channel FET) 利洞流來 p (p-channel FET)n FET n (channel) 流流 p FET 洞 p (channel) 流流來類 1 n p FET