4558fa.indd

Size: px

Start display at page:

Download "4558fa.indd"

舞畴庄
6 years ago
Views:

1 Dual SIM/Smart Card Power Supply and Interface FEATURES Power Management and Control for Two SIM Cards or Smart Cards Independent 1.8/3 CC Control for Both Cards Supports Simultaneous Powering of Both Cards Fast Channel Switching Automatic Level Translation Dynamic Pull-Ups Deliver Fast Signal Rise Times* Built-In Fault Protection Circuitry Automatic Activation/Deactivation Sequencing Circuitry Low Operating/Shutdown Current > 10k ESD on SIM Card Pins Meets EM Fault Tolerance Requirements Low Profi le 20-Lead (3mm 3mm) QFN Package APPLICATIONS GSM, TD-SCDMA and other 3G + Cellular Phones Wireless Point-of-Sale Terminals Multiple SIM Card Interfaces DESCRIPTION The LTC 4558 provides the power conversion and signal level translation needed for advanced cellular telephones to interface with 1.8 or 3 subscriber identity modules (SIMs). The device meets all requirements for 1.8 and 3 SIMs and contains LDO regulators to power 1.8 or 3 SIM cards from a 2.7 to 5.5 input. The output voltages can be set using the two voltage selection pins and up to 50mA of load current can be supplied. A channel select pin determines which channel is open for communication. Separate enable pins for each channel allow both cards to be powered at once and allow for faster transition from one channel to the other. Internal level translators allow controllers operating with supplies as low as 1.4 to interface with 1.8 or 3 Smart Cards. Battery life is maximized by a low operating current of 65μA and a shutdown current of less than 1μA. Board area is minimized by the low profile 3mm 3mm 0.75mm leadless QFN package., LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. *Protected by U.S. Patents, including TYPICAL APPLICATION BATT 1.4 TO TO 6 0.1μF 0.1μF Deactivation Sequence μcontroller BATT CLKIN I/OA RSTIN RSTA DATA CLKA CLKRUNA CCA CLKRUNB GND ENABLEA ENABLEB CCB CSEL CLKB SELA RSTB SELB I/OB LTC4558 1μF 1μF C7 C2 C3 C1 C1 C3 C2 C7 I/O RST CLK CC CC CLK RST I/O 1.8/3 SIM CARD A GND C5 1.8/3 SIM CARD B GND C5 RSTX 5/DI CLKX 5/DI I/OX 5/DI CCX 2/DI C CCX = 1μF 10μs/DI 4558 TA TA01 1

2 ABSOLUTE MAXIMUM RATINGS (Note 1) BATT,, DATA, RSTIN, CLKIN, CLKRUNA, CLKRUNB, ENABLEA, ENABLEB, CSEL, SELA, SELB to GND to 6 I/OA, CLKA, RSTA to CCA I/OB, CLKB, RSTB to CCB I CCA,B (Note 4)...80mA CCA,B Short-Circuit Duration... Indefinite Operating Temperature Range (Note 3) C to 85 C Storage Temperature Range C to 125 C PACKAGE/ORDER INFORMATION TOP IEW CLKB RSTB I/OB ENABLEB SELB CCB 1 15 CLKRUNB 2 14 CLKRUNA BATT CSEL CCA 4 12 SELA CLKA 5 11 ENABLEA RSTA I/OA DATA RSTIN CLKIN UD PACKAGE 20-LEAD (3mm 3mm) PLASTIC QFN T JMAX = 125 C, θ JA = 68 C/W, θ JC = 4.2 C/W EXPOSED PAD (PIN 21) IS GND, MUST BE SOLDERED TO PCB ORDER PART NUMBER LTC4558EUD UD PART MARKING LCSH Order Options Tape and Reel: Add #TR Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF Lead Free Part Marking: Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS The denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at T A = 25 C. BATT = 3.3, = 1.8, C A = C B = 1μF, unless otherwise specifi ed. PARAMETER CONDITIONS MIN TYP MAX UNITS Input Power Supply BATT Operating oltage I BATT Operating Current CCA = 3, CCB = 0, I CCA = 0μA μa CCA = 1.8, CCB = 0, I CCA = I CCB = 0μA μa Operating oltage I DCC Operating Current 6 15 μa I DCC Shutdown Current μa I BATT Shutdown Current = μa SIM Card Supplies CCA,B Output oltage 3 Mode, 0mA < I CCA,B < 50mA 1.8 Mode, 0mA < I CCA,B < 30mA CCA,B Turn-On Time I CCA,B = 0mA, ENABLEA,B to CCA,B at 90% Selected oltage ms Channel Switching Time ENABLEA = ENABLEB = RSTIN = 1 μs CSEL to RSTB

3 ELECTRICAL CHARACTERISTICS The denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at T A = 25 C. BATT = 3.3, = 1.8, C A = C B = 1μF, unless otherwise specifi ed. PARAMETER CONDITIONS MIN TYP MAX UNITS CLKA,B Low Level Output oltage ( OL ) Sink Current = 200μA (Note 2) 0.2 High Level Output oltage ( OH ) Source Current = 200μA (Note 2) CCA,B 0.2 Rise/Fall Time Loaded with 50pF (10% to 90%) (Note 2) 16 ns CLKA,B Frequency (Note 2) 10 MHz RSTA,B Low Level Output oltage ( OL ) Sink Current = 200μA (Note 2) 0.2 High Level Output oltage ( OH ) Source Current = 200μA (Note 2) CCA,B 0.2 Rise/Fall Time Loaded with 50pF (10% to 90%) (Note 2) 100 ns I/OA, I/OB Low Level Output oltage ( OL ) Sink Current = 1mA ( DATA = 0) (Note 2) 0.3 High Level Output oltage ( OH ) Source Current = 20μA ( DATA = DCC ) (Note 2) 0.85 CCA,B Rise/Fall Time Loaded with 50pF (10% to 90%) (Note 2) 500 ns Short-Circuit Current DATA = 0 (Note 2) 5 10 ma DATA Low Level Output oltage ( OL ) Sink Current = 500μA ( I/OA,B = 0) 0.3 High Level Output oltage ( OH ) Source Current = 20μA ( I/OA,B = CCA,B ) 0.8 Rise/Fall Time Loaded with 50pF (10% to 90%) ns ENABLEA, ENABLEB, RSTIN, CLKIN, CSEL, SELA, SELB, CLKRUNA, CLKRUNB Low Input Threshold ( IL ) 0.15 High Input Threshold ( IH ) 0.85 Input Current (I IH /I IL ) 1 1 μa Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: This specification applies to both Smart Card classes. Note 3: The LTC4558E is guaranteed to meet performance specifications from 0 C to 85 C. Specifi cations over the 40 C to 85 C operating temperature range are assured by design, characterization and correlation with statistical process controls. Note 4: Based on long-term current density limitations. 3

4 TYPICAL PERFORMANCE CHARACTERISTICS T A = 25 C unless otherwise noted. BATT SUPPLY CURRENT (μa) No Load Supply Current vs BATT DROPOUT CCX = 3 T A = 25 C I CCA = I CCB = 0μA CCX = 1.8 SHORT-CIRCUIT CURRENT (ma) I/OX Short-Circuit Current vs Temperature DCC = BATT = 5.5 CCX = 3 I/OX SHORTED TO CCX BATT QUIESCENT CURRENT (μa) BATT Quiescent Current (I BATT I CC ) vs Load Current T A = 25 C BATT = BATT SUPPLY OLTAGE () TEMPERATURE ( C) LOAD CURRENT (μa) 4557 G G G03 BATT SHUTDOWN CURRENT (μa) BATT Shutdown Current vs Supply oltage DCC = 1.8 T A = 25 C T A = 40 C T A = 85 C SHUTDOWN CURRENT (μa) Shutdown Current vs Supply oltage BATT = 5.5 T A = 40 C TO 85 C BATT SUPPLY OLTAGE () 4557 G SUPPLY OLTAGE () 4557 G05 4

5 TYPICAL PERFORMANCE CHARACTERISTICS T A = 25 C unless otherwise noted. LTC4558 Data I/O Channel, C L = 40pF I/0X 1/DI DATA 1/DI 200ns/DI 4557 G06 Deactivation Sequence, C CCX = 1μF RSTX 5/DI CLKX 5/DI I/OX 5/DI CCX 2/DI 20μs/DI 4557 G07 5

6 PIN FUNCTIONS (Pin 2): Power. Reference voltage for the control logic. BATT (Pin 3): Power. Supply voltage for the analog sections of the LTC4558. CCA, CCB (Pins 4, 1): Card Socket. The CCA, CCB pins should be connected to the CC pins of the respective card sockets. The activation of the CCA, CCB pins are controlled by ENABLEA and ENABLEB. They can be set to 1.8 or 3 via the SELA and SELB inputs. CLKA,CKLB (Pins 5, 20): Card Socket. The CLKA,CKLB pins should be connected to the CLK pins of the respective card sockets. The CLKA,CKLB signals are derived from the CLKIN pin. They provide a level shifted CLKIN signal to the selected card. The CLKA,CKLB pins are gated off until CCA, CCB attain their correct values. When a card socket is deselected, its CLK pin may be left active or brought LOW using the CLKRUNA, CLKRUNB pins. RSTA,RSTB (Pins 6, 19): Card Socket. The RSTA,RSTB pins should be connected to the RST pins of the respective card sockets. The RSTA,RSTB signals are derived from the RSTIN pin. When a card is selected, its RST pin follows RSTIN. The RSTA,RSTB pins are gated off until CCA, CCB attain their correct values. When a card socket is deselected, the state of its RST pin is latched to its current state. I/OA,I/OB (Pins 7, 18): Card Socket. The I/OA,I/OB pins should be connected to the I/O pins of the respective card sockets. When a card is selected, its I/O pin transmits/receives data to/from the DATA pin. The I/OA,I/OB pins are gated off until CCA, CCB attain their correct values. DATA (Pin 8): Input/Output. Microcontroller side data I/O pin. The DATA pin provides the bidirectional communication path to both cards. One of the cards may be selected to communicate via the DATA pin at a time. The pin possesses a weak pull-up current source, allowing the controller to use an open drain output and maintain a HIGH state during shutdown, as long as is powered. RSTIN (Pin 9): Input. The RSTIN pin supplies the reset signal to the cards. It is level shifted and transmitted directly to the RST pin of the selected card. CLKIN (Pin 10): Input. The CLKIN pin supplies the clock signal to the cards. It is level shifted and transmitted directly to the CLK pin of the selected card. If CLKRUNA,B is HIGH, the clock signal will be transmitted to the CLKA,B pin, regardless of whether that card is selected, as long as that card socket is enabled. ENABLEA, ENABLEB (Pins 11, 17): Inputs. The ENABLEA and ENABLEB pins enable or disable channel A and channel B, respectively. SELA, SELB (Pins 12, 16): Inputs. The SELA and SELB pins select the voltage level of each set of SIM/ Smart Card pins. Bringing either of these pins HIGH will set the output level of its respective channel to 3. Bringing either of these pins LOW will set the output level of its respective channel to 1.8. CSEL (Pin 13): Input. The CSEL pin selects which set of SIM/Smart Card pins are active. CLKRUNA, CLKRUNB (Pins 14, 15): Inputs. The CLKRUNA and CLKRUNB inputs are used to select whether the clock signal is always sent to card sockets that are enabled or whether the clock is gated with the CSEL pin. Exposed Pad (Pin 21): Ground. This ground pad must be soldered directly to a PCB ground plane. 6

7 BLOCK DIAGRAM 2 BATT 3 CCA 4 LDOA LDOB 1 CCB I/OA 7 18 I/OB RSTA 6 19 RSTB CLKA 5 20 CLKB CLKRUNA CLKRUNB DATA 8 RSTIN CLKIN 9 10 CONTROL LOGIC 21 GND 13 CSEL SELA ENABLEA SELB ENABLEB 4558 BD 7

8 OPERATION The LTC4558 features two independent SIM/Smart Card channels. Only one of these channels may be open for communication at a time however both channels can be enabled and made ready for communication using the ENABLEA and ENABLEB pins. This allows faster transition from one channel to the other. Each channel is able to produce two voltage levels, 1.8 and 3. The channel selection and voltage selection are controlled by the CSEL, SELA and SELB pins as shown in the table below: Table 1. Channel and oltage Truth Table SELECTED OLTAGES CSEL SELA SELB CARD A B A A A A B B B B 3 3 Bidirectional Channels The bidirectional channels are level shifted to the appropriate CCA,B voltages at the I/OA,B pins. An NMOS pass transistor performs the level shifting. The gate of the NMOS transistor is biased such that the transistor is completely off when both sides have relinquished the channel. If one side of the channel asserts a LOW, then the transistor will convey the LOW to the other side. Note that current passes from the receiving side of the channel to the transmitting side. The low output voltage of the receiving side will be dependent upon the voltage at the transmitting side plus the IR drop of the pass transistor. When a card socket is selected, it becomes a candidate to drive data on the DATA pin and likewise receive data from the DATA pin. When a card socket is deselected, its I/O pin will be pulled HIGH and communication with the DATA pin will be disabled. If both channels are disabled, a weak pull-up ensures that the DATA pin is held HIGH, as long as is powered. Dynamic Pull-Up Current Sources The current sources on the bidirectional pins (DATA,I/OA,B) are dynamically activated to achieve a fast rise time with a relatively small static current. Once a bidirectional pin is relinquished, a small start-up current begins to charge the node. An edge rate detector determines if the pin is released by comparing its slew rate with an internal reference value. If a valid transition is detected, a large pull-up current enhances the edge rate on the node. The higher slew rate corroborates the decision to charge the node thereby affecting a dynamic form of hysteresis. LOCAL SUPPLY I START BIDIRECTIONAL PIN dv dt REF 4558 F01 Figure 1. Dynamic Pull-Up Current Source Reset Channels When a card is selected, the reset channel provides a level shifted path from the RSTIN pin to the RST pin of the selected card. When a card is deselected, the last state of the RSTA,B pin is latched. This allows a deselected card to remain active, and therefore eliminates delays associated with card initialization. Clock Run Mode arious SIM/Smart Cards may have different requirements for the state of the clock pin when the channel is not open for communication. The CLKRUNA,B pins allow the user to select whether the clock is brought LOW after the channel is deselected or allowed to run. If a channel is enabled, bringing its CLKRUN pin HIGH will transmit the clock to the corresponding card socket, whether or not the channel is selected using the CSEL. + 8

9 OPERATION Activation/Deactivation Activation and deactivation sequencing is handled by builtin circuitry. Each channel may be activated or deactivated independently of the other. The activation sequence for each channel is initiated by bringing the ENABLEA,B pin HIGH. The activation sequence is outlined below: 1. The RSTA,B, CLKA,B and I/OA,B pins are held LOW. 2. CCA,B is enabled. 3. After CCA,B is stable at its selected level, the I/OA,B and RSTA,B channels are enabled. 4. The clock channel is enabled on the rising edge of the second clock cycle after the I/OA,B pin is enabled. The deactivation sequence is initiated by bringing the ENABLEA,B pin LOW. The deactivation sequence is outlined below: 1. The reset channel is disabled and RSTA,B is brought LOW. 2. The clock channel is disabled and the CLKA,B pin is brought LOW two clock cycles after ENABLEA,B is brought LOW. If the clock is not running, the clock channel will be disabled approximately 9μs after the ENABLEA,B pin is brought LOW. 3. The I/O channel is disabled and the I/OA,B pin is brought LOW approximately 9μs after the ENABLEA,B pin is brought LOW. 4. CCA,B will be depowered after the I/OA,B pin is brought LOW. The activation or deactivation sequences will take place every time a card channel is enabled or disabled. When a channel is deselected using the CSEL pin, the RSTA,B state is latched, the I/OA,B channel becomes high impedance and CLKA,B is brought LOW after a maximum of two clock cycles. LTC4558 Fault Detection The CCA,B, I/OA,B, RSTA,B, CLKA,B and DATA pins are all protected against short-circuit faults. While there are no logic outputs to indicate that a fault has occurred, these pins will be able to tolerate the fault condition until it has been removed. The CCA,B, I/OA,B, and RSTA,B pins possess fault protection circuitry which will limit the current available to the pins. Each CC pin is capable of supplying approximately 90mA (typ) before the output voltage is reduced. The CLKA,B pins are designed to tolerate faults by reducing the current drive capability of their output stages. After a fault is detected by the internal fault detection logic, the logic waits for a fault detection delay to elapse before reducing the current drive capability of the output stage. The reduced current drive allows the LTC4558 to detect when the fault has been removed. 9

10 APPLICATIONS INFORMATION 10k ESD Protection All Smart Card pins (CLKA,B, RSTA,B, I/OA,B, CCA,B and GND) can withstand over 10k of human body model ESD in-situ. In order to ensure proper ESD protection, careful board layout is required. The GND pin should be tied directly to a ground plane. The CCA,B capacitors should be located very close to the CCA,B pins and tied immediately to the ground plane. Capacitor Selection A total of four capacitors is required to operate the LTC4558. An input bypass capacitor is required at BATT and. Output bypass capacitors are required on each of the Smart Card CC pins. There are several types of ceramic capacitors available, each having considerably different characteristics. For example, X7R ceramic capacitors have excellent voltage and temperature stability but relatively low packing density. Y5 and X5R ceramic capacitors have apparently higher packing density but poor performance over their rated voltage or temperature ranges. Under certain voltage and temperature conditions Y5, X5R and X7R ceramic capacitors can be compared directly by case size rather than specified value for a desired minimum capacitance. The CCA,B outputs should be bypassed to GND with a 1μF capacitor. A low ESR ceramic capacitor is recommended on each CC pin to ensure ESD compliance. BATT and should be bypassed with 0.1μF ceramic capacitors. Compliance Testing Inductance due to long leads on type approval equipment can cause ringing and overshoot that leads to testing problems. Small amounts of capacitance and damping resistors can be included in the application without compromising the normal electrical performance of the LTC4558 or Smart Card system. Generally a 100Ω resistor and a 20pF capacitor will accomplish this, as shown in Figure 2. 1μF LTC4558 CCA,B CLKA,B RSTA,B I/OA,B 100Ω 100Ω 100Ω 20pF 20pF 20pF 20pF SMART CARD SOCKET 4558 F02 Figure 2. Additional Components for Improved Compliance Testing 10

11 PACKAGE DESCRIPTION UD Package 20-Lead Plastic QFN (3mm 3mm) (Reference LTC DWG # Rev A) LTC ± ± 0.05 (4 SIDES) 1.65 ± ± 0.05 RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED 3.00 ± 0.10 (4 SIDES) PIN 1 TOP MARK (NOTE 6) PACKAGE OUTLINE 0.20 ± BSC 0.75 ± 0.05 R = 0.05 TYP 1.65 ± 0.10 (4-SIDES) BOTTOM IEW EXPOSED PAD R = TYP PIN 1 NOTCH R = 0.20 TYP OR CHAMFER 0.40 ± (UD20) QFN 0306 RE A REF NOTE: 1. DRAWING IS NOT A JEDEC PACKAGE OUTLINE 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE 0.20 ± BSC Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 11

12 TYPICAL APPLICATION BATT 1.4 TO TO 6 μcontroller C3 0.1μF BATT CLKIN I/OA RSTIN RSTA DATA CLKA CLKRUNA CCA CLKRUNB GND ENABLEA ENABLEB CCB CSEL CLKB SELA RSTB SELB I/OB LTC4558 C4 0.1μF C1 1μF C2 1μF C7 C2 C3 C1 C1 C3 C2 C7 I/O RST CLK CC CC CLK RST I/O 1.8/3 SIM CARD A GND C5 1.8/3 SIM CARD B GND C TA01a RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LTC1555L/ LTC1555L-1.8 LTC1555/LTC1556 LTC1755/LTC1756 LTC1955 1MHz, SIM Power Supply and Level Translator for 1.8/3/5 SIM Cards 650kHz, SIM Power Supply and Level Translator for 3/5 SIM Cards 850kHz, Smart Card Interface with Serial Control for 3/5 Smart Card Applications Dual Smart Card Interface with Serial Control for 1.8/3/5 Smart Card Applications LTC kHz, SIM Power Supply for 3/5 SIM Cards LTC4555 SIM Power Supply and Level Translator for 1.8/3 SIM Cards LTC4556 Smart Card Interface with Serial Control LTC4557 Dual SIM/Smart Card Power Supply and Level Translator for 1.8/3 Cards ThinSOT is a trademark of Linear Technology Corporation. IN : 2.6 to 6.6, OUT = 1.8/3/5, I Q = 32μA, I SD < 1μA, SSOP16 IN : 2.7 to 10, OUT = 3/5, I Q = 60μA, I SD < 1μA, SSOP16, SSOP20 IN : 2.7 to 7, OUT = 3/5, I Q = 60μA, I SD < 1μA, SSOP16, SSOP24 IN : 3 to 5.5, OUT = 1.8/3/5, I Q = 200μA, I SD < 1μA, QFN32 IN : 2.6 to 4.4, OUT = 3/5, I Q = 14μA, I SD < 1μA, ThinSOT IN : 3 to 6, OUT = 1.8/3, I Q = 40μA, I SD < 1μA, QFN16 IN : 2.7 to 5.5, OUT = 1.8/3/5, I Q = 250μA, I SD < 1μA, 4 4 QFN24 IN : 2.7 to 5.5, OUT = 1.8/3, I Q = 250μA, I SD < 1μA, QFN16 12 LT 0407 RE A PRINTED IN USA Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA (408) FAX: (408) LINEAR TECHNOLOGY CORPORATION 2007

易迪拓培训专注于微波射频天线设计人才的培养网址 :http://www.edatop.com 射频和天线设计培训课程推荐易迪拓培训 (www.edatop.com) 由数名来自于研发第一线的资深工程师发起成立, 致力并专注于微波射频天线设计研发人才的培养 ; 我们于 2006 年整合合并微波 EDA 网 (www.mweda.

永业科技全一电子等多家台湾地区企业易迪拓培训课程列表 :http://www.edatop.com/peixun/rfe/129.

13 易迪拓培训专注于微波射频天线设计人才的培养网址 : 射频和天线设计培训课程推荐易迪拓培训 ( 由数名来自于研发第一线的资深工程师发起成立, 致力并专注于微波射频天线设计研发人才的培养 ; 我们于 2006 年整合合并微波 EDA 网 ( 现已发展成为国内最大的微波射频和天线设计人才培养基地, 成功推出多套微波射频以及天线设计经典培训课程和 ADS HFSS 等专业软件使用培训课程, 广受客户好评 ; 并先后与人民邮电出版社电子工业出版社合作出版了多本专业图书, 帮助数万名工程师提升了专业技术能力客户遍布中兴通讯研通高频埃威航电国人通信等多家国内知名公司, 以及台湾工业技术研究院永业科技全一电子等多家台湾地区企业易迪拓培训课程列表 : 射频工程师养成培训课程套装该套装精选了射频专业基础培训课程射频仿真设计培训课程和射频电路测量培训课程三个类别共 30 门视频培训课程和 3 本图书教材 ; 旨在引领学员全面学习一个射频工程师需要熟悉理解和掌握的专业知识和研发设计能力通过套装的学习, 能够让学员完全达到和胜任一个合格的射频工程师的要求课程网址 : ADS 学习培训课程套装该套装是迄今国内最全面最权威的 ADS 培训教程, 共包含 10 门 ADS 学习培训课程课程是由具有多年 ADS 使用经验的微波射频与通信系统设计领域资深专家讲解, 并多结合设计实例, 由浅入深详细而又全面地讲解了 ADS 在微波射频电路设计通信系统设计和电磁仿真设计方面的内容能让您在最短的时间内学会使用 ADS, 迅速提升个人技术能力, 把 ADS 真正应用到实际研发工作中去, 成为 ADS 设计专家... 课程网址 : HFSS 学习培训课程套装该套课程套装包含了本站全部 HFSS 培训课程, 是迄今国内最全面最专业的 HFSS 培训教程套装, 可以帮助您从零开始, 全面深入学习 HFSS 的各项功能和在多个方面的工程应用购买套装, 更可超值赠送 3 个月免费学习答疑, 随时解答您学习过程中遇到的棘手问题, 让您的 HFSS 学习更加轻松顺畅课程网址 : `

易迪拓培训专注于微波射频天线设计人才的培养网址 :http://www.edatop.

14 易迪拓培训专注于微波射频天线设计人才的培养网址 : CST 学习培训课程套装该培训套装由易迪拓培训联合微波 EDA 网共同推出, 是最全面系统专业的 CST 微波工作室培训课程套装, 所有课程都由经验丰富的专家授课, 视频教学, 可以帮助您从零开始, 全面系统地学习 CST 微波工作的各项功能及其在微波射频天线设计等领域的设计应用且购买该套装, 还可超值赠送 3 个月免费学习答疑课程网址 : HFSS 天线设计培训课程套装套装包含 6 门视频课程和 1 本图书, 课程从基础讲起, 内容由浅入深, 理论介绍和实际操作讲解相结合, 全面系统的讲解了 HFSS 天线设计的全过程是国内最全面最专业的 HFSS 天线设计课程, 可以帮助您快速学习掌握如何使用 HFSS 设计天线, 让天线设计不再难课程网址 : MHz NFC/RFID 线圈天线设计培训课程套装套装包含 4 门视频培训课程, 培训将 13.56MHz 线圈天线设计原理和仿真设计实践相结合, 全面系统地讲解了 13.56MHz 线圈天线的工作原理设计方法设计考量以及使用 HFSS 和 CST 仿真分析线圈天线的具体操作, 同时还介绍了 13.56MHz 线圈天线匹配电路的设计和调试通过该套课程的学习, 可以帮助您快速学习掌握 13.56MHz 线圈天线及其匹配电路的原理设计和调试详情浏览 : 我们的课程优势 : 成立于 2004 年,10 多年丰富的行业经验, 一直致力并专注于微波射频和天线设计工程师的培养, 更了解该行业对人才的要求经验丰富的一线资深工程师讲授, 结合实际工程案例, 直观实用易学联系我们 : 易迪拓培训官网 : 微波 EDA 网 : 官方淘宝店 : 专注于微波射频天线设计人才的培养易迪拓培训官方网址 : 淘宝网店 :

ANSYS 在航空航天器电磁兼容、电磁干扰分析中的应

ANSYS 在航空航天器电磁兼容、电磁干扰分析中的应易迪拓培训专注于微波射频天线设计人才的培养网址 :http://www.edatop.com 射频和天线设计培训课程推荐易迪拓培训 (www.edatop.com) 由数名来自于研发第一线的资深工程师发起成立, 致力并专注于微波射频天线设计研发人才的培养 ; 我们于 2006 年整合合并微波 EDA 网 (www.mweda.com), 现已发展成为国内最大的微波射频和天线设计人才培养基地,