國立中山大學學位論文典藏.PDF
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- 其扉 黎
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1 Thermo-Mechanical Deformation and Stress Analysis of Flip-Chip Ball Grid Array
2
3 kent Kelly SarahEllenNina
4 XI IC (Shadow Moiré) I
5 ANSYS ANSYS II
6 FCBGA III
7 Anand model E BKIN Creep Anand E CTE / E CTE / IV
8 IC C UBM D i i+1.38 V
9 Hardening rules von Mises Isotropic Hardening Kinematic Hardening (a) (b) (c) (a) (b) E BKIN ANSYS (a) (b) (c) (a) (b) UA02 3D VI
10 5-3 (a) (b) (a) UA (b) UA (a) UA (b) UA (a) UA (b) UA (a) UA (b) UA (a) UA (b) UA (a) UA (b) UA (a) (D/UF ) (b) (D/UF ) (c) (D/UF ) FCBGA (a) (D/UF ) 84 VII
11 5-12 (b) (D/UF ) (a) FCBGA (b) FCBGA (a) E (D/UF ) (b) E (D/UF ) FCBGA E FCBGA FCBGA E FCBGA (a) CTE1 (D/UF ) (b) CTE1 (D/UF ) (a) CTE1 FCBGA (b) CTE1 FCBGA (a) / (D/UF ) (b) / (D/UF ) FCBGA / FCBGA FCBGA 93 VIII
12 5-25 / FCBGA (a) (D/UF ) (b) (D/UF ) (a) FCBGA (b) FCBGA (a) (D/UF ) (b) (D/UF ) (a) FCBGA (b) FCBGA / ( ) ( ) ( ) 100 IX
13 ANSYS E CTE X
14 Abstract The thesis investigates the thermo-mechanical deformation and stress of a flip-chip package (FCBGA) via both experiment and simulation. First, Shadow Moiré is used to evaluate the warpage of a package at elevated temperature. Then we adopt the finite element method incorporated with the software ANSYS to simulate the warpage of a package and compare the obtained results with experiment at data. Then, the material properties of underfill, the thickness of die and the substrate are considered as important parameters. Their effects on stress and strain fields of package are studied. In case of FCBGA with and without underfill, we find that FCBGA with underfill can reduce stress concentration and increase warpage of a package in comparion with FCBGA without underfill. As for FCBGA with and without heat slug, it is observed that the warpage of FCBGA with heat slug is smaller than that of FCBGA without heat slug. Both stress and strain in the packages of above two cases are similar. The parametric study about the underfill, we find that smaller modulus and CTEs of underfill can reduce the stress and strain of package. However in the consideration of thicknesses of both die and substrate, it is shown that thinner die can reduce stress and strain of package, but thinner substrate does not. So it is suggested that thicknesses of die are the thinner the better. XI
15 1 1-1 PDA 1958 Jack Kilby (IC)
16 (Flip-Chip Ball Grid Array, FCBGA) 1-2 ( Packaging ) (IC) (LSI) (Condenser) (Connector) ( ) 1-1 (Level 0) IC Flip Chip (solder Bump) (Level 1) (level 2) (Surface Mount TechnologySMT) (Solder Reflow) 2
17 (level 3) I/O (Connector) 1-2 (1) (2) (3) (4) IC IC IC ( Integrated Circuit ) IC 1958 DIP(Dual In-Line Package) (I/O) QFP(Quad Flat Package)SO (Small 3
18 Outline) PGA(Pin Grid Array) BGA(Ball Grid Array)CSP(Chip Scale Package) 1-3 (Wire Bonding) (Tape-Automated Bonding, TAB) (Flip-Chip) 1-4 (On Side) (Double Side) (Multi-Layer) (Wire Bonding) 2 (Tape Automated Bonding, TAB) 1960 (GE) IC 3 (Flip Chip) 4
19 2000 QFP BGA 61.2% % BGA % %1 CPU GHz CPU Flip ChipIntel FCBGA FCBGA CSP IBM C4 (Controlled Collapse Chip Connection) 1-6 I/O (Copper pad) IC (Wire Bonding) (Solder) IO (Reflow) (Solder Ball) (Flip Chip Bonder) 5
20 (Underfill) 2 () () () (Flip Chip Bumping) UBM(Under Bump Metallurgy) 1-7 (Via) (Adhesion Layer) (Diffusion Barrier Layer) (Wetting Layer) TiCr SnPb Al (Intermetallic Compound) CuNi AuAgCuNi UBM 100m~125m () (Flip Chip Assembly) 1-8 6
21 1-3 FCBGA (Chip Scale Package,CSP) (FCBGA) (Warpage) (Coefficient of Thermal Expansion, CTE) ( CTE 2~3ppm/ CTE 17~20ppm/) 7
22 (Shadow Moiré) Chen Nelson3 (CTE) (Bonded Layer) 1989 Darveaux 4 Kuo5 (Bimetal) 1992 Lau Rice67 (Crack) 1995 Sven Ekkehard PaiDing Chou 9 Stiteler Ume10 8
23 Dang 11 MCM-D Yeh12 Mercado13 PBGA Hwang 14 (Incompatible Mesh)FCBGA (Conventional Mesh) Okura 15 2D E CTE Chiang16 CTE (mismatch) 9
24 1-5 ANSYS 10
25
26 DIP SIP ZIP (Dual In-Line Package) (Single In-Line Package) (Zig-Zag In-Line Package) QFP PGA SOP (Quad-Flat Package) (Pin Grid Array) (Small Outline Package) 1-3 IC Substrate ( ) (Wire Bonding) Substrate ( ) (Tape Automated Bonding, TAB) Substrate ( ) (Flip Chip)
27 C4 13
28 1-7 UBM 14
29 Wafer Mount Wafer Saw Flip Chip Bonding Plasma Clean Substrate Baking Flip Chip Reflow Underfill Curing Laser Marking Solder Ball Mount Packaging Flux Clean Solder Ball Reflow Flip Chip Package
30 16 (Shadow Moir) FCBGA (Warpage) (Underfill) (Shadow Moir) (Shadow Moir ) (Projection Moir) (MoirInterferometry)
31 2-1 (Grating) CCD 17 w = p tan α + tan β (2-1) w (Out-of plane displacement) p (pitch) (CCD ) 45 17
32 0 w = p CCD (Phase Shift) 100 lines-per-inch 10mils (1mils=0.001inch) 1~20mil 10mils I( x, y) = B( x, y) + Acos( φ( x, y)) (2-2) (x,y) I(x,y) B(x,y) A φ (x,y) I(x,y) B(x,y)A φ (x,y) 18
33 19 )), ( cos( ), ( ), ( y x A y x B y x I φ + = + = 2 ), ( cos ), ( ), ( π φ y x A y x B y x I ( ) φ π + = ), ( cos ), ( ), ( y x A y x B y x I + = 2 3 ), ( cos ), ( ), ( π φ y x A y x B y x I (2-3) ) ( ) ( tan ), ( I I I I y x = φ (2-4) mils 0.1mils PS88 1mils~10mils PS CCD lines-per-inch mils
34 (UA02UA03 UA04) (Thermal Couple) CCD
35 3D 2-7 3D y y 21
36 2-1 Measurement Die (mm) Substrate (mm) Warpage size thickness size thickness Bump (Sn/Pb) Underfill Type Heat Sink X 16x x /37 UA02 NA X 16x x /37 UA03 NA X 16x x /37 UA04 NA X 16x x /37 UA02 YES X 16x x /37 UA03 YES X 16x x /37 UA04 YES X 16x x /37 w/o underfill NA 22
37 a 2-1 CCD
38
39 D 2-7 3D 25
40 ANSYS (Anand s model) ANSYS ANSYS (Linear Elastic) el { σ } = [ D]{ ε } (3-1) {σ } (stress matrix) [D] (stiffness matrix) { ε el (elastic strain matrix) th } = { ε} { ε } {ε } (total strain matrix) ε ε ε ε ε ε ] [ x y z xy yz zx { ε th } (thermal strain matrix) { th Τ ε } 2D Τ α ] [ y xα Τ = Τ Τ ref Τ Τref 26
41 α x x xy (Newton-Raphson Method) (1) (3-2) [ K ( u) ]{ u} = { F a } (3-2) [ K( u) ] (Coefficient Matrix) { u} (Vector of Unknown Values) { F a } (Vector of Applied Loads) (2) (3-2) (Residual vector) {R} a r a { R} [ K ]{ u} { F } = { F } { F } { 0} (3-3) { F r } (Vector of Internal Load) (Restoring Force) (3) { R} { u } { } { R} = { R } i + { R} { u} ({ u } { u }) 1 + 2! 2{ R} 2 { u} 2 ({ u } { u }) + L 0 = i i+ 1 i i+ 1 i i i (3-4) 27
42 i (3-4) T { } = { R } + [ K ]{ ( u }) + O( { u }) 2 (3-5) 0 i i i i T [ Ki ] (Tangent Matrix) { } { u } { } u i = +1 i u i { R} { u} i ({ u }) { R} 2 i = ({ } { } ) + L { } u 2 i+ 1 u i 2! u O (3-5) i T { 0} = { R } + [ K ]{ ( u }) (3-6) i i (3-2) i ( ) T 1 T 1 a { u } = [ K ] { R } = [ K ] { F } [ K]{ u } i i (3-3) T a [ K ]{ u } = { F } { F r } i i i i i i (3-7) (3-8) { u } = { u +1} { u } (3-9) i T [ K ] i i i i { u } i i { u} i+ 1 i+1 { F a } { F r } i i (4) 28
43 u i 2. K T F r K i 3.(3-8) { } i u i i T i { } u i+1 u i+1 u i i 5. i+2 u 2. ~ 4. i (5) { } u i < ε u u ref i+1 (3-10) { } R < ε R R ref (3-11) (Vector Norm) { } (3-7) u i a { R} { F } { F r } = i εu ε R (Tolerance) uref R ref (Reference Value) (6) 29
44 1. { R} = max R 2. L1 { } R 1 3. L2 R = R 1 2 { } = ( R ) 2 2 L1 L2 L2 (ductile material) (brittle material) 3-4 σ = Eε (3-12) 20 (Bump) 30
45 (Bilinear Kinematic Hardening Plasticity) (Creep) (Anand Model) (Silicon Die) (Substrate) (Bump) (Underfill) (Heat Slug) (Thermal Grease) (Stiffener) (Adhesive) (Solder Mask) (Copper Pad) ANSYS (3-12) 3-4 E (Modulus of Elasticity) (Young's Modulus) E (Tg)Tg Tg E E 31
46 (Bilinear Kinematic Hardening PlasticityBKIN) (Creep) (Anand Model) Bilinear Kinematic Hardening Plasticity (BKIN) Isotropic hardening rule Kinematic hardening rule 3-5(a)(b) Isotropic hardening rule (a)bc=b CKinematic hardening rule (b) AA =BB 21 von Mises criteria (Distortion Energy Theory) Tresca yield criteria (Maximum Shear Theory) ANSYS Bilinear Kinematic Hardening Plasticity(BKIN) 32
47 von Mises σ von Mises σ σ = e f ({ σ }) σ e σ e [( σ σ ) + ( σ σ ) + ( σ σ ) + 6( τ + τ τ )] 2 1 σ e x y y z z x xy yz + 2 = (3-13) ( σ σ ) x τ τ xy zx τ ( σ σ ) y τ xy yz τ τ ( σ σ ) z zx yz = 0 33 zx (3-14) (3-14) σ (Principal Normal Stress) σ 1 σ 2σ 3 σ e = 1 2 (3-13) (3-15) 2 2 [( σ σ ) + ( σ σ ) + ( σ σ ) ] e (3-15) σ e σ o σ 0 3 = 3-6 Isotropic hardening Kinematic hardening Isotropic hardening 3-7 Kinematic hardening 3-8 Kinematic hardening rule (Bilinear Kinematic Hardening PlasticityBKIN) 22 e
48 (Creep) ( ) K63Sn37Pb 456K (Stead State Creep) ANSYS 13 Garofalo & Arrhenius s Law (3-16) ε = C1 2 exp dt d C 4 C T 3 [ sinh ( C σ )] (3-16) ANSYS C 1 C 2 C 3 C 4 Anand Anand s Model Anand
49 Anand ( ) Anand Garofalo & Arrhenius s Law (Deformation Resistance) (Constitutive Equation) Garofalo & Arrhenius s Law Anand Anand Garofalo & Arrhenius s Law (3-17) dεeq σ = A sinh ζ dt s 1/ m exp Q KT (3-17) Q activation energym strain-rate sensitivityk Boltzmann s constantmultiplier of stress s deformation resistance s s s s s s a = ho 1 sign 1 εeq (3-18) * * sign a strain rate sensitivityh o hardening constant s ^ * εeq = s exp A Q KT n (3-19) s coefficient of deformation resistance saturation valuen deformation resistance value 35
50 (3-17)~(3-19) Anand s model Anand s model ANSYS ANSYS 9 Anand
51 3-1 Anand model 37
52 3-1 i 3-2 i+1 38
53
54 s s A B A B A O B C e A O B C e (a) Isotropic Hardening (b) Kinematic Hardening 3-5 Hardening rules 3-6 von Mises 40
55 3-7 Isotropic Hardening 3-8 Kinematic Hardening 41
56 ANSYS 4-1 (1) (2) (3) (4) (5) (6) (Popcorn) (7) T(x, t)=t(t)
57 4-3(a)(b) 4-1 E 4-2 BKINCreepAnand (4-1)314-5 BKIN E = T (K) (Mpa) (4-1) ANSYS (Element), ANSYS 43
58 ANSYSY 4-7 ANSYS ANSYS Newton Raphson Method ANSYS (Pre-Processing) (Solution) (Post-Processing) (Pre-Processing) 1. BKIN 8 PLANE82 Creep 8 PLANE183 Anand 8 VISCO XY 44
59 2. 3. (mesh) 4-9(a)(b)(c) (Solution) D Ux 0 3. (Step Ramp) (Substep) 45
60 t t t 4. (1) (Convergence Criteria) ANSYS (2) (Solver) ANSYS PCG(Preconditioned Conjugate Gradient) (3) (Maximum Number of Equilibrium Iterations) ANSYS (4) (Line Search Option)
61 ANSYS (5) (Solution Termination Option) (Post-Processing) (D/UF )
62 4-1 Material Properties Young's Modulus (Gpa) Possion's Ratio CTE (ppm/'c) Tg ('C) Die n.a. Copper Pad n.a. 63Sn37Pb Nonlinear n.a. Substrate n.a. Solder Mask CTE1=60 CTE2= Heat Slug n.a. Stiffener n.a. Thermal Grease n.a. Adhesive n.a. UA UA UA CTE1=33 CTE2= CTE1=33 CTE2= CTE1=38 CTE2=
63 4-2 E Temperature () Substrate (MPa) Underfill UA02 (MPa) Underfill UA03 (MPa) Underfill UA04 (MPa) BKIN Temperature (K) Young's modulus (Mpa) Yiled Strength (Mpa) Tangent Modulus (Mpa)
64 4-4 Creep Creep Constant C C2 7.93e-8 C C Anand Anand Constant So Q/R 9400 A Xi 1.5 m h o s n 0.07 a
65 (a) (b) (c) 4-1 (a) (b) (c) 51
66 mm 0.74mm 8mm 0.5mm 1.2mm 28.3mm (a) 100m 25m 145m (b) 4-3 (a) (b) 52
67 Young's modulus (GPa) Temperature ('C) 4-4 E 4-5 BKIN 53
68 Temperature ('C) Time (second)
69 No No 4-7 ANSYS 55
70 4-8 8 (a) (b) (c) 4-9 (a) (b) (c) 56
71
72 58 FCBGA FCBGA (UA02UA03 UA04) 5-1 (a)(b)
73 UA UA02 3D 5-1 (a)(b) UA02 UA04 UA02 UA04 E Tg CTE UA UA03 Tg UA03 84 E CTE 25~100 UA02 UA UA UA03 UA02 UA
74 UA (a)(b) UA02 2~3 mils CTE E CTE 5-4 (a)(b)5-5 (a) (b)5-6(a)(b) CTE 16~17ppm/ CTE CTE 60
75 (Gap) (Inelastic) ANSYS (a)(b)5-8 (a)(b)5-9 (a)(b) measurement BKINCreep Anand UA03 UA02 UA
76 2D 3D ANSYS UA (a)(b)(c) D/UF 5-11 D/UF 62
77 (a)(b) 5-13(a)(b) 32 FCBGA IC ANSYS (UA03) CTE
78 (Die/Substrate) UA (a)(b) D/UF E E 5-15~5-18 E E D/UF E D/UF E E D/UF E D/UF 64
79 CTE UA03 CTE1 CTE1 33ppm/ ppm/16ppm/ 66ppm/ 5-19 (a)(b) CTE1 D/UF CTE (a)(b) 5-2 CTE1 Tg CTE1 CTE (a)(b) / D/UF / 65
80 (a)(b) 5-3 1~2MPa 1/8 1/16 1/ (a)(b) D/UF 5-27 (a)(b) 5-26 (a)(b) 5-4 1/4 1/ (a)(b) 66
81 0.62(0185mm/0.3mm) 0.62(0.74mm/1.2mm) 5-29 (a)(b) (0185mm/0.3mm) 0.185mm 0.185mm/0.3mm 0.185mm/1.2mm MPa E CTE E CTE1 CTE1 E
82 1 E E E CTE CTE E CTE 68
83 5-1 E D/UF D/UF E (Mpa) (Mpa) (Mpa) 0.25xE xE E (Ref.) xE xE CTE1 D/UF D/UF CTE1 (Mpa) (Mpa) (Mpa) 0.25xCTE CTE CTE1(Ref.) xCTE
84 5-3 / / D/UF D/UF (mm/mm) (Mpa) (Mpa) (Mpa) 0.15 (0.185/1.2) (0.37/1.2) 0.62 (Ref.) (0.74/1.2) 1.23 (0.74/0.6) 2.46 (0.74/0.3) / D/UF D/UF (mm/mm) (Mpa) (Mpa) (Mpa) 0.04 (0.046/1.2) (0.093/1.2) 0.15 (0.185/1.2) 0.31 (0.37/1.2) 0.62 (Ref.) (0.74/1.2)
85 5-5 / D/UF D/UF (mm/mm) (Mpa) (Mpa) (Mpa) 0.15 (0.185/1.2) (0.185/0.3) 0.62 (Ref.) (0.74/1.2) 2.46 (0.74/0.3) E 0.25xE 0.5xE E 2xE 4xE CTE1 0.25xCTE1 0.5xCTE1 CTE1 2xCTE
86 5-8 / 0.15 (0.185mm/1.2mm) 0.31 (0.37mm/1.2mm) 0.62 (0.74mm/1.2mm) 1.23 (0.74mm/0.6mm) 2.47 (0.74mm/0.3mm) (0.046mm/1.2mm) 0.08 (0.093mm/1.2mm) 0.15 (0.185mm/1.2mm) 0.31 (0.37mm/1.2mm) 0.62 (0.74mm/1.2mm) (0.185mm/1.2mm) 0.62 (0.74mm/1.2mm) 0.62 (0.185mm/0.3mm) 2.47 (0.74mm/0.3mm)
87 Warpage - Full Area (mils) Temperature ('C) UA02 UA03 UA (a) Warpage - Die Area (mils) UA02 UA03 UA Temperature ('C) 5-1 (b) 73
88 D183 D100 D UA02 3D 74
89 Warpage - Full Area (mils) w/o UF UA Temperature ('C) 5-3 (a) Warpage - Die Area (mils) Temperature ('C) w/o UF UA (b) 75
90 Warpage - Full Area (mils) UA02 w/o HS UA02 with HS Temperature ('C) 5-4 (a) UA02 5 Warpage - Die Area (mils) UA02 w/o HS UA02 with HS Temperature ('C) 5-4 (b) UA02 76
91 6 Warpage -Full Area (mils) UA03 w/o HS UA03 with HS Temperature ('C) 5-5 (a) UA03 3 Warpage -Die Area (mils) UA03 w/o HS UA03 with HS Temperature ('C) 5-5 (b) UA03 77
92 10 Warpage -Full Area (mils) Temperature ('C) UA04 w/o HS UA04 with HS 5-6 (a) UA04 5 Warpage - Die Area (mils) UA04 w/o HS UA04 with HS Temperature ('C) 5-6 (b) UA04 78
93 Warpage - Full Area (mils) Temperature ('C) Measurement BKIN Creep Anand 5-7 (a) UA02 Warpage - Die Area (mils) Measurement BKIN Creep Anand Temperature ('C) 5-7 (b) UA02 79
94 Warpage - Full Area (mils) Temperature ('C) measurement BKIN Creep Anand 5-8 (a) UA03 4 Warpage - Die Area (mils) measurement BKIN Creep Anand Temperature ('C) 5-8 (b) UA03 80
95 Warpage - Full Area (mils) Temperature ('C) measurement BKIN Creep Anand 5-9 (a) UA04 5 Warpage -Die Area (mils) measurement BKIN Creep Anand Temperature ('C) 5-9 (b) UA04 81
96 Normal Stress (MPa) w/o UF with UF Dist from bump edge to die edge (mm) 5-10 (a) (D/UF w/o UF with UF Shear Stress (MPa) Dist from bump edge to die edge (mm) 5-10 (b) (D/UF 82
97 w/o UF with UF Principal Stress (MPa) Dist from die center to die edge (mm) 5-10 (c) ( with UF without UF 5-11 FCBGA 83
98 40 20 w/o HS with HS Normal Stress (MPa) Dist from bump edge to die edge (mm) 5-12 (a) (D/UF w/o HS with HS Shear Stress (MPa) Dist from bump edge to die edge (mm) 5-12 (b) (D/UF 84
99 without HS with HS 5-13 (a) FCBGA without HS with HS 5-13 (b) FCBGA 85
100 Normal Stress (MPa) xE 0.5xE E(Ref.) 2xE 4xE Dist from bump edge to die edge (mm) 5-14 (a) E (D/UF Shear Stress (MPa) xE 0.5xE E(Ref.) 2xE 4xE Dist from bump edge to die edge (mm) 5-14 (b) E (D/UF 86
101 Reference (E, Tg, CTE1) 5-15 FCBGA 0.25xE 0.5xE 2xE 4xE 5-16 E FCBGA 87
102 Reference (E, Tg, CTE1) 5-17 FCBGA 0.25xE 0.5xE 2xE 4xE 5-18 E FCBGA 88
103 Normal stress (MPa) xCTE 0.5xCTE CTE(Ref.) 2xCTE Dist from bump edge to die edge (mm) 5-19 (a) CTE1 (D/UF Shear Stress (MPa) xCTE 0.5xCTE CTE(Ref.) 2xCTE Dist from bump edge to die edge (mm) 5-19 (b) CTE1 (D/UF 89
104 0.25xCTE1 0.5xCTE1 2xCTE (a) CTE1 FCBGA 0.25xCTE1 0.5xCTE1 2xCTE (b) CTE1 FCBGA 90
105 Normal Stress (MPa) Ratio=2.47 (0.74mm/0.6mm) Ratio=1.23 (0.74mm/0.3mm) Ratio=0.62 (0.74mm/1.2mm) Ratio=0.31 (0.37mm/1.2mm) Ratio=0.15 (0.185mm/1.2mm) Dist from bump edge to die edge (mm) 5-21 (a) / (D/UF Shear Stress (MPa) Ratio=2.47 (0.74mm/0.6mm) Ratio=1.23 (0.74mm/0.3mm) Ratio=0.62 (0.74mm/1.2mm) Ratio=0.31 (0.37mm/1.2mm) Ratio=0.15 (0.185mm/1.2mm) Dist from bump edge to die edge of (mm) 5-21 (b) / (D/UF 91
106 Reference (0.74mm/1.2mm) 5-22 FCBGA 0.185mm/1.2mm 0.37mm/1.2mm 0.74mm/0.6mm 0.74mm/0.3mm 5-23 FCBGA 92
107 Reference (0.74mm/1.2mm) 5-24 FCBGA 0.185mm/1.2mm 0.37mm/1.2mm 0.74mm/0.6mm 0.74mm/0.3mm 5-25 FCBGA 93
108 Normal Stress (MPa) Ratio=0.04 (0.046mm/1.2mm) Ratio=0.08 (0.093mm/1.2mm) Ratio=0.15 (0.185mm/1.2mm) Ratio=0.31 (0.37mm/1.2mm) Ratio=0.62 (0.74mm/1.2mm) Dist from bump edge to die edge (mm) 5-26 (a) (D/UF Shear Stress (MPa) Ratio=0.04 (0.046mm/1.2mm) Ratio=0.08 (0.093mm/1.2mm) Ratio=0.15 (0.185mm/1.2mm) Ratio=0.31 (0.37mm/1.2mm) Ratio=0.62 (0.74mm/1.2mm) Dist from bump edge to die edge (mm) 5-26 (b) (D/UF 94
109 0.046mm/1.2mm 0.093mm/1.2mm 0.185mm/1.2mm 0.37mm/1.2mm 0.74mm/1.2mm 5-27 (a) FCBGA 95
110 0.046mm/1.2mm 0.093mm/1.2mm 0.185mm/1.2mm 0.37mm/1.2mm 0.74mm/1.2mm 5-27 (b) FCBGA 96
111 40 20 Ratio=0.15 (0.185mm/1.2mm) Ratio=0.62 (0.74mm/1.2mm) Ratio=0.62 (0.185mm/0.3mm) Ratio=2.47 (0.74mm/0.3mm) Normal Stress (MPa) Dist from bump edge to die edge (mm) 5-28 (a) (D/UF Shear Stress (MPa) Ratio=0.15 (0.185mm/1.2mm) Ratio=0.62 (0.74mm/1.2mm) Ratio=0.62 (0.185mm/0.3mm) Ratio=2.47 (0.74mm/0.3mm) Dist from bump edge to die edge (mm) 5-28 (b) (D/UF 97
112 5-29 (a) FCBGA 5-29 (b) FCBGA 98
113 Princinpal stress (MPa) Ratio=0.62 (0.74mm/1.2mm) Ratio=1.23 (0.74mm/0.6mm) Ratio=2.47 (0.74mm/0.3mm) Ratio=0.31 (0.37mm/1.2mm) Ratio=0.15 (0.185mm/1.2mm) Dist from die center to die edge (mm) 5-30 / ( Principal Stress (MPa) Ratio=0.15 (0.185mm/1.2mm) Ratio=0.62 (0.74mm/1.2mm) Ratio=0.62 (0.185mm/0.3mm) Ratio=2.47 (0.74mm/0.3mm) Dist from die center to die edge (mm) 5-31 ( 99
114 Principal Stress (MPa) Ratio=0.04 (0.046mm/1.2mm) Ratio=0.08 (0.093mm/1.2mm) Ratio=0.15 (0.185mm/1.2mm) Ratio=0.31 (0.37mm/1.2mm) Ratio=0.62 (0.74mm/1.2mm) Dist from die center to die edge (mm) 5-32 ( 100
115 ANSYS E Tg CTE
116 CTE D 3D 2D
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